EP1701216B1 - Messtechnische Trägerplattenvorrichtung für lithographische Anwendungen - Google Patents

Messtechnische Trägerplattenvorrichtung für lithographische Anwendungen Download PDF

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Publication number
EP1701216B1
EP1701216B1 EP06251118A EP06251118A EP1701216B1 EP 1701216 B1 EP1701216 B1 EP 1701216B1 EP 06251118 A EP06251118 A EP 06251118A EP 06251118 A EP06251118 A EP 06251118A EP 1701216 B1 EP1701216 B1 EP 1701216B1
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EP
European Patent Office
Prior art keywords
exposure
sensor
substrate
stage
light
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EP06251118A
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English (en)
French (fr)
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EP1701216A3 (de
EP1701216A2 (de
Inventor
Marcus Adrianus Van De Kerkhof
Harald Petrus Cornelis Vos
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ASML Netherlands BV
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ASML Netherlands BV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R31/00—Coupling parts supported only by co-operation with counterpart
    • H01R31/06—Intermediate parts for linking two coupling parts, e.g. adapter
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45C—PURSES; LUGGAGE; HAND CARRIED BAGS
    • A45C13/00—Details; Accessories
    • A45C13/30—Straps; Bands
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/10—Earpieces; Attachments therefor ; Earphones; Monophonic headphones

Definitions

  • the present invention is related to measurement of lithographic exposure system parameters, and more particularly, to a dedicated metrology stage for lithography applications.
  • Lithography is a process used to create features on the surface of substrates.
  • substrates can include those used in the manufacture of flat panel displays, circuit boards, various integrated circuits, and the like.
  • a frequently used substrate for such applications is a semiconductor wafer.
  • One skilled in the relevant art would recognize that the description herein would also apply to other types of substrates.
  • a wafer which is disposed on a wafer stage, is exposed to an image projected onto the surface of the wafer by an exposure system located within a lithography system.
  • the exposure system includes a reticle (also called a mask) for projecting the image onto the wafer.
  • the reticle is generally located between a semiconductor chip and a light source, usually mounted on a reticle stage.
  • the reticle In photolithography, the reticle is used as a photo mask for printing a circuit on a semiconductor chip, for example.
  • Lithography light shines through the mask and then through a series of optical lenses that shrink the image. This small image is then projected onto the silicon or semiconductor wafer.
  • the process is similar to how a camera bends light to form an image on film.
  • the light plays an integral role in the lithographic process.
  • the key to creating more powerful microprocessors is the light's wavelength. The shorter the wavelength, the more transistors can be etched onto the silicon wafer. A silicon wafer with many transistors results in a more powerful microprocessor.
  • a relatively common problem in the lithographic art is a need to measure parameters of the optical systems used for lithographic exposure. As a general rule, it is desirable to be able to do such measurements without taking the lithographic exposure system offline, and without disassembly and reassembly of components.
  • the current practice in the industry is to place sensors on the wafer stage, to the extent space permits. These sensors are generally located in the space not occupied by the wafer itself, in the corners of the wafer stage.
  • EP 1 041 357 discloses an exposure apparatus used to produce semiconductor devices which includes a measurement stage having an illumination quantity monitor a brightness unevenness sensor and a board for measuring imaging characteristics
  • US 6 310 679 B discloses a projection exposure apparatus comprising coherence reducing means for increasing the depth of focus when printing isolated patterns.
  • the coherence reducing means is a polarization control member PCM arranged in or in the vicinity of the pupil plane of the projection optical system.
  • a substrate stage WST is provided with means for judging whether the direction of polarization is appropriate or not (column 24, lines 1 - 9).
  • US 2004/114150 A discloses an apparatus for determining the influence on the state of polarization of optical radiation by an optical system under test.
  • the apparatus comprises a polarization sensor which comprises a convex lens, a quarter wavelength plate, a polarizer and a CCD image sensor.
  • the polarization sensor is arranged to measure the state of polarization in a pupil-resolved fashion (paragraphs 61 - 63; figure 6 ).
  • the system is within a lithography system, which further comprises an illumination system, a patterning device, and a projection system.
  • the patterning device patterns a beam of radiation from the illumination system.
  • the projection system which is located within the exposure portion, projects that pattered beam onto the substrate or the sensor system.
  • FIG. 1 illustrates one embodiment of the present invention. Shown in FIG. 1 is an isometric three-dimensional view of a substrate handling mechanism 102 of an exposure apparatus (the remainder of the exposure apparatus, such as projection optics, reticle stage, illumination source, etc. are not shown for clarity in FIG. 1 , but see discussion below relating to FIG. 2 ).
  • the substrate handling apparatus 102 has a frame 104, portions of which are shown in FIG. 1 .
  • a robot arm 108 or a similar mechanism, is used to move substrates 112 in and out of the substrate handling apparatus 102.
  • Two substrate stages, in this case, labelled 106A and 106B, are located within the substrate handling apparatus 102.
  • the substrate stages 106A, 106B have substrates 112A, 112B located thereon.
  • the substrates being exposed can be semiconductor wafers or flat panel display (FPD) substrates.
  • Typical dimensions of the substrate stages 106A, 106B is slightly larger than the substrate 112 itself.
  • the substrate stages can be roughly square and on the order of about 13-14 inches in size.
  • one of the substrate stages is typically used for exposure, while the other one is used for measuring of exposure results (for example, measurement of post-process substrate surface height, etc.).
  • Each substrate stage 106A, 106B has a corresponding actuating system 110A, 110B for moving the substrate stage 106A, 106B.
  • the substrate stages 106A, 106B can have corresponding sensors mounted thereon, designated 124A-130A for substrate stage 106A, and 124B-130B for substrate stage 106B. In one example, that the location of the sensors 124-130 is in the corners of the substrate stages 106, since the substrate 112 is normally in the centre of the substrate stage 106.
  • a metrology stage 116 which includes sensors 140A, 140B, 140C and 140D for measurement of optical parameters. It will be understood that the number of sensors 140 on the metrology stage 116 is not particularly limited, although typically the overall dimensions of the metrology stage 116 will be smaller than the dimensions of the substrate stages 106.
  • the vertical dimension of the sensors 124-130 placed on the substrate stages 106 may be limited for various reasons.
  • the minimum height of the substrate stage 106 and the location of the lowest element of the projection optics can limit the vertical dimensions of the sensors 124-130 on the substrate stage 106.
  • the sensors 140 can be "taller" than the sensors 124-130.
  • the substrate stages 106 can be made smaller in the X-Y (horizontal) dimension (for example, the "corners” can be “cut off,” resulting in a "footprint” of the substrate stage that is smaller than the roughly square shape shown in FIG. 1 ), realizing space savings.
  • FIG. 2 schematically illustrates an exemplary lithographic system 200 according to one embodiment of the present invention, which uses the metrology stage 116.
  • the lithographic system 200 (shown in side view) includes a light source (illumination source) 210, such as a laser or a lamp, illumination optics 212 (such as a condenser lens), and a patterning device (e.g., reticle, mask, spatial light modulator, etc., hereinafter reticle will be used) 214, which is usually mounted on a patterning device stage (not shown).
  • a patterning device e.g., reticle, mask, spatial light modulator, etc., hereinafter reticle will be used
  • the reticle 214 can be a plate with an exposure pattern on it.
  • the reticle can be replaced with a dynamic patterning device, such as an array of programmable elements or a spatial light modulator array, such as used in maskless lithography.
  • a dynamic patterning device such as an array of programmable elements or a spatial light modulator array, such as used in maskless lithography.
  • Light from the reticle 214 is imaged onto the substrate 112 using projection optics 216.
  • the substrate 112 is mounted on the substrate stage 106 (only one of the two substrate stages is shown in this figure, as the invention is not limited to any particular number of substrate stages).
  • the housing 104 which can enclose only the substrate stage 106 and the metrology stage 116, or can enclose other components illustrated in the figure).
  • the sensors 140 include a polarization sensor, which is particularly useful for measurement of time-varying polarization (absolute and relative) properties of the projection optics.
  • the polarization sensor is one sensor where the ability to install sensors that have a substantial height becomes particularly important.
  • FIG. 3 shows an exemplary polarization sensor that can be used in the system of FIG. 2 , according to one embodiment of the present invention.
  • the polarization sensor includes a quarter wavelength plate 302, a collimator lens 304, a polarizer 306, a detector 308, and a mechanism for rotating the quarter wavelength plate 302.
  • the polarizer (analyser) 306 is located downstream of the projection optics 216 and positioned in the optical path.
  • the polarizer 306 passes one particular polarization of the incoming light that can then be measured in the metrology stage 116.
  • Examples of polarizers can be such optical components as polarizing plates, polarizing beam splitters, etc. Such optical components are frequently relatively volume-intensive, for example, on the order of several cubic centimetres. Furthermore, such optical components are usually very limited in angular range (i.e., in terms of angle of incidence), usually on the order of less than 1 degree, and frequently substantially less than 1 degree.
  • the projection optics 216 is typically a high numerical aperture lens, or set of lenses, which is mismatched to the very small angular range of the optical components, such as polarizing beamsplitters.
  • a polarizer 306 in order to use such a polarizer 306, it is necessary to shape the beam appropriately.
  • such shaping is done by means of a collimator lens 304 (or set of lenses).
  • the collimator lens 304 is also relatively difficult to miniaturize, and often has a volume of several cubic centimetres.
  • the entire polarization sensor needs to be rotated, while in another example a quarter wavelength plate 302 can be inserted into the beam path (for example, between the collimator lens 304 and projection optics 216 ) and can then be rotated to select the appropriate polarization.
  • a detector 308 (charged coupled device (CCD) array or, not forming part of the invention, a photodiode), is positioned such that the detector 308 is at the proper focus and is aligned in the X-Y plane (note that this is an imaging measurement, and it is important to properly position the detector).
  • CCD charge coupled device
  • the entire polarization sensor including the quarter wavelength plate 302, collimator lens 304, polarizer 306, CCD array 308, and a mechanism for rotating the quarter wavelength plate 302, occupies relatively large volume.
  • this volume can be on the order of several cubic centimetres, which given the "cramped" dimensions available to the designer of the lithographic tool, makes it relatively impractical to use such polarization sensors, if they need to be mounted on conventional substrate stages.
  • the metrology stage 116 can be made thinner, the polarization sensor, an example of which is described above, can be installed on the metrology stage 116.
  • FIG. 5 shows an apodization sensor 502 in the sensors 140, according to one embodiment of the present invention.
  • the apodization sensor 502 measures the intensity of the exposure beam as a function of distance from the optical axis in the XY plane (image plane). This is also an imaging measurement.
  • the apodization sensor 502 is another example of a sensor where vertical height requirements can make it impractical to mount such a sensor on a conventional substrate stage.
  • the apodization sensor 502 includes a CCD array 504 that "looks" into the pupil of the projection optics 216. Generally, the CCD array 504 needs to be optically conjugate with the pupil of the projection optics 216.
  • the relay lens 506 has a dimension on the order of several millimetres or even a few centimetres. Thus, mounting such an apodization sensor 502 on a conventional substrate stage is extremely difficult.
  • a CCD array 504 for an apodization sensor 502 measures the light intensity in the image plane as a function of (X,Y) and is preferably at least the size of the exposure field in the image plane.
  • an exposure field is several tens of millimetres by several millimetres in size and on the order of about 26 millimetres by 10 millimetres in size (although the exposure field in many state of the art lithography tools is generally increasing in size over time).
  • the CCD array 504 is at least as large, or somewhat larger, in size, as the exposure field.
  • the apodization sensor 502 can be used to verify the numerical aperture of the system. Such a measurement may be desired by the end user to confirm that the system performs to specification, i.e., works "as advertised.” It should be noted that the numerical aperture measurement is a one-time (or, at most, relatively rare) measurement, compared to many other measurements that need to be performed much more frequently.
  • FIG. 4 shows an exemplary arrangement of sensors on the metrology stage (with the top view and side view shown).
  • nine sensors 140A-140I are shown in a grid pattern arrangement. Any of the sensors discussed above or below can be one of these nine sensors 140A-140I, having the arrangement and structures as described, which are not shown for convenience.
  • the sensors 140A-140I can include a sensor to measure slit uniformity, if slits are used in the lithographic optics. This is a measure of illumination source quality.
  • a typical high-end lithographic system exposes an area on a substrate that is several tens of millimetres by several millimetres in size, depending on the manufacturer of the lithographic system, for example, about 26 millimetres by 10 millimetres.
  • the 26 millimetre dimension is usually referred to as "X”
  • the 10 millimetre dimension is usually referred to as "Y.”
  • the optical system is able to image a perfect "rectangle" that has an intensity distribution that is uniform throughout the rectangle.
  • a slit uniformity sensor is designed to measure whether the "uniform rectangle" that is imaged is in fact uniform, and if not, how far it deviates from uniformity. This can be accomplished, for example, through the use of a integrating precision photodiode that is scanned in the Y direction.
  • the photodiode can have a pinhole, or a slit, "on top” of it, to limit the amount of light that reaches the photodiode.
  • a charged couple device normally cannot be used for this purpose, because most CCDs drift over time.
  • What is of primary interest in the slit uniformity measurement is absolute values of intensity (in addition to relative intensity as a function of X,Y distance), since it is important to accurately relate the voltage from the photodiode to the amount of light received by the photoresist.
  • the use of a precision photodiode permits a better signal-to-noise ratio.
  • the photodiode provides an integration of the received light in the Y direction, either by moving the photodiode or by integrating using a slit.
  • the sensors 140A-1401 can include a wavefront sensor to measure the quality of the wavefront image, as well as any aberrations.
  • a wavefront sensor is an ILIAS sensor (Inline Lens Interferometric System) to measure the quality of the wavefront.
  • ILIAS sensors Inline Lens Interferometric System
  • the ILIAS sensor can include such a relay and/or collimator lens, to substantially improve performance of the ILIAS sensor, and therefore, of the measurement of the quality of the wave front and the aberrations.
  • the sensors 140A-140I can include a sensor to measure image contrast.
  • the contrast sensor measures the quantity Maximum Intensity - Minimum Intensity Maximum Intensity - Minimum Intensity in the image plane.
  • One way to implement the contrast sensor is to have slits on the reticle, with the slits arranged to have a certain pitch.
  • One photodetector, or one single photodetector per pitch can be used in the image plane.
  • the slits in the reticle in the object plane
  • the contrast sensor therefore provides a measurement of the relative intensity between the light areas and the dark areas.
  • FIGS. 6 and 7 show a stray light sensor 602 in the sensors 140A-140I, according to one embodiment of the present invention.
  • FIG. 7 shows an alternative embodiment of the plate portion 706 of sensor 602, according to one embodiment of the present invention.
  • Sensor 602 can measure stray light (which can be due to contamination of the optics).
  • the stray light sensor 602 essentially measures intensity in the image plane as a function of radial distance from the optical axis. In one example, this is done by creating a point source in the object plane, in other words, the reticle functions as a point source, rather than as a mask for exposure. Ideally, the point source images into a point in the image plane.
  • the stray light sensor 602 can also include a transmissive glass plate 606 with chrome 608 (or other metal) blocking the light from the point source.
  • the glass plate 606 is positioned in the image plane.
  • a detector 604, for example, as a photo detector or a CCD array is positioned below the glass plate.
  • the detector can also be an integrating photodiode.
  • a ring shaped annulus 710 is left open, with the remaining portion of the glass plate 706 also covered by chrome or metal 708.
  • the sensor 602 measures the amount of light received at a distance r (i.e., I(r)) from the optical axis, which, with the point source blocked, represents stray light.
  • I(r) a distance from the optical axis
  • Different glass plates, with different radii of the annulus can be used to "step through" the various distances r. It will be appreciated that other arrangements of sources in the object plane, detectors and blocking elements (like glass plates) are possible.
  • the sensors 140A-140I can include a focus sensor, to sense the location of the focus (image) plane in the vertical direction.
  • the focus sensor is typically a photodiode that is initially placed at the expected location of the focus, and light intensity is measured. The photodiode is then moved in three degrees of freedom (X, Y and Z) to locate the maximum, which is then taken to be the location of the focus.
  • the sensors 140A-140I can include a sensor to measure alignment of the reticle, functioning in a manner similar to the focus sensor (to find the maximum intensity at a point of alignment).

Claims (10)

  1. Ein System (102), das Folgendes beinhaltet:
    einen Substrattisch (106A), der konfiguriert ist, um ein Substrat (112A) zum Empfangen eines Belichtungsstrahls von einem Belichtungssystem eines Lithographiesystems zu positionieren; und
    einen Messtisch (116) mit einem Sensorsystem (140) darauf, das konfiguriert ist, um Parameter des Belichtungssystems oder des Belichtungsstrahls zu erfassen; wobei das Sensorsystem einen Sensor der relativen oder absoluten Polarisation beinhaltet, der Folgendes beinhaltet:
    eine Viertelwellenlängenplatte (302);
    eine Kollimatorlinse (304);
    einen Polarisator (306) und
    eine ladungsgekoppelte Vorrichtungsanordnung (308).
  2. System gemäß Anspruch 1, wobei das Sensorsystem ferner einen Apodisationssensor (502) beinhaltet, der Folgendes beinhaltet:
    eine Relaislinse (506) und
    eine ladungsgekoppelte Vorrichtungsanordnung (504), die optisch mit einer Pupille eines optischen Systems (216) des Belichtungssystems konjugiert ist.
  3. System gemäß Anspruch 1 oder 2, wobei das Sensorsystem ferner einen Streulichtsensor (602) beinhaltet, der Folgendes beinhaltet:
    eine Platte (706) mit einer absorbierenden Beschichtung (708) darauf, wobei die Beschichtung eine ringförmige durchlässige Region (710) bildet, und
    einen Photodetektor (604) zum Wahrnehmen von Licht, das durch die ringförmige durchlässige Region geht.
  4. System gemäß einem der vorhergehenden Ansprüche, das ferner Folgendes beinhaltet:
    einen zweiten Substrattisch (106B), der konfiguriert ist, um ein zweites Substrat (112B) zum Empfangen des Belichtungsstrahls von dem Belichtungsabschnitt des Lithographiesystems zu positionieren.
  5. System gemäß einem der vorhergehenden Ansprüche, wobei der Messtisch (116) kleiner als ein Durchmesser des Substrats ist.
  6. Ein Lithographiesystem (200), das Folgendes beinhaltet:
    ein Beleuchtungssystem (212), das einen Strahl aus Strahlung produziert;
    eine Musteraufbringungsvorrichtung (214), die den Strahl mustert;
    ein Projektionssystem (216), das den gemusterten Strahl auf ein Substrat projiziert; und
    ein System gemäß einem der vorhergehenden Ansprüche.
  7. Ein Verfahren zum Messen optischer Parameter eines Belichtungsabschnitts eines Lithographiesystems (200), wobei das Verfahren Folgendes beinhaltet:
    Wegbewegen eines Substrattisches (106) von einer optischen Achse des Belichtungsabschnitts;
    Bewegen eines Messtisches (116), um einen Sensor in der optischen Achse anzuordnen; und
    Messen eines optischen Parameters von Licht aus dem Belichtungssystem;
    wobei:
    die Messung eine Polarisationsmessung beinhaltet, die Folgendes beinhaltet:
    Senden des Lichts aus dem Belichtungssystem durch eine Viertelwellenlängenplatte (302), eine Kollimatorlinse (304) und einen Polarisator (306) und auf eine ladungsgekoppelte Vorrichtungsanordnung (308).
  8. Verfahren gemäß Anspruch 7, wobei die Messung ferner eine Apodisationsmessung beinhaltet, die Folgendes beinhaltet:
    Senden des Lichts aus dem Belichtungssystem durch eine Relaislinse (506) und auf eine ladungsgekoppelte Vorrichtung (504), die optisch mit einer Pupille der Projektionsoptik (216) konjugiert ist.
  9. Verfahren gemäß Anspruch 7 oder 8, wobei die Messung ferner eine Streulichtmessung beinhaltet, die Folgendes beinhaltet:
    Senden des Lichts aus dem Belichtungssystem durch eine Platte (706) mit einer absorbierenden Beschichtung (708) darauf, wobei die Beschichtung eine ringförmige durchlässige Region (710) bildet, und auf einen Photodetektor (604) zum Wahrnehmen von Licht, das durch die ringförmige durchlässige Region geht.
  10. Ein Verfahren zur Herstellung einer Vorrichtung, das Folgendes beinhaltet: Messen eines optischen Parameters eines lithographischen Geräts gemäß dem Verfahren aus einem der Ansprüche 7 bis 9; und Belichten von Substraten unter Verwendung des lithographischen Geräts, wobei eine Einstellung der Belichtung gemäß dem gemessenen Parameter bestimmt wird.
EP06251118A 2005-03-03 2006-03-01 Messtechnische Trägerplattenvorrichtung für lithographische Anwendungen Not-in-force EP1701216B1 (de)

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JP5048087B2 (ja) 2012-10-17
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JP5048086B2 (ja) 2012-10-17
US20060219947A1 (en) 2006-10-05
JP2010135816A (ja) 2010-06-17
JP4477589B2 (ja) 2010-06-09
EP1701216A3 (de) 2006-09-20
JP2006245586A (ja) 2006-09-14
JP2010135814A (ja) 2010-06-17
JP2010135817A (ja) 2010-06-17
JP5048088B2 (ja) 2012-10-17
EP1701216A2 (de) 2006-09-13
JP2010114463A (ja) 2010-05-20
JP5048089B2 (ja) 2012-10-17
JP5048085B2 (ja) 2012-10-17
KR20060096337A (ko) 2006-09-11
CN1841207A (zh) 2006-10-04
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SG125245A1 (en) 2006-09-29
JP2010135815A (ja) 2010-06-17
CN100578361C (zh) 2010-01-06

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