EP1576653B1 - Substrat a semi-conducteur presentant un materiau composite en cuivre-diamant et son procede de production - Google Patents

Substrat a semi-conducteur presentant un materiau composite en cuivre-diamant et son procede de production Download PDF

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Publication number
EP1576653B1
EP1576653B1 EP03768542.7A EP03768542A EP1576653B1 EP 1576653 B1 EP1576653 B1 EP 1576653B1 EP 03768542 A EP03768542 A EP 03768542A EP 1576653 B1 EP1576653 B1 EP 1576653B1
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EP
European Patent Office
Prior art keywords
copper
composite
semiconductor package
die
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP03768542.7A
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German (de)
English (en)
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EP1576653A4 (fr
EP1576653A2 (fr
EP1576653A3 (fr
Inventor
John Washington Mccoy
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Kyocera America Inc
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Kyocera America Inc
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Publication date
Application filed by Kyocera America Inc filed Critical Kyocera America Inc
Priority to EP12189387.9A priority Critical patent/EP2587536B8/fr
Publication of EP1576653A3 publication Critical patent/EP1576653A3/fr
Publication of EP1576653A2 publication Critical patent/EP1576653A2/fr
Publication of EP1576653A4 publication Critical patent/EP1576653A4/fr
Application granted granted Critical
Publication of EP1576653B1 publication Critical patent/EP1576653B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01066—Dysprosium [Dy]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Claims (7)

  1. Boîtier de semi-conducteur (10) comprenant un substrat métallique (12 ; 30), le substrat métallique (12 ; 30) comprenant un corps (20 ; 32) et des couches de cuivre pur (22, 24 ; 34, 36), dans lequel les couches de cuivre (22, 24 ; 34, 36) sont montées sur les surfaces latérales (26, 28 ; 38, 40) opposées du corps (20 ; 32), caractérisé en ce que le corps (20 ; 32) est au moins partiellement composé d'un composite de particules de diamant dans une matrice de cuivre.
  2. Boîtier de semi-conducteur (10) selon la revendication 1, dans lequel le corps (20) est entièrement composé du composite de particules de diamant dans une matrice de cuivre.
  3. Boîtier de semi-conducteur (10) selon la revendication 1, dans lequel le corps (32) est composé d'un composite cuivre/tungstène comportant un insert composite (42) de particules de diamant dans une matrice de cuivre dans celui-ci.
  4. Boîtier de semi-conducteur (10) selon la revendication 1, comprenant en outre une puce (14) montée sur l'une de la paire de couches de cuivre (22, 24), une pluralité d'isolateurs (16) montés sur l'une de la paire de couches de cuivre (22, 44) adjacents à la puce (14), une pluralité de conducteurs montés sur les isolateurs (16) et une pluralité de fils de liaison (19) couplant les conducteurs à la puce (14).
  5. Boîtier de semi-conducteur (10) selon la revendication 1, dans lequel le corps (20) a une configuration généralement plane ayant une épaisseur généralement uniforme entre les surfaces latérales (26, 28) opposées, et la paire de couches de cuivre (22, 24) a une configuration généralement plane relativement mince d'une épaisseur entre 30 nm et 2 µm.
  6. Boîtier de semi-conducteur (10) selon la revendication 1, dans lequel les particules de diamant sont revêtues de l'un ou de plusieurs du Cr, W, Mo, Co, Cu, Ti, Si, SiC, TiN, TiC, Ta et Zr.
  7. Boîtier de semi-conducteur (10) selon la revendication 1, dans lequel les particules de diamant sont revêtues d'une couche de Cr, d'une couche de W, d'une couche de Co et d'une couche de Cu.
EP03768542.7A 2002-11-07 2003-10-24 Substrat a semi-conducteur presentant un materiau composite en cuivre-diamant et son procede de production Expired - Lifetime EP1576653B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP12189387.9A EP2587536B8 (fr) 2002-11-07 2003-10-24 Substrat semi-conducteur comportant un matériau composite en cuivre/diamant et son procédé de fabrication

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US291126 2002-11-07
US10/291,126 US6727117B1 (en) 2002-11-07 2002-11-07 Semiconductor substrate having copper/diamond composite material and method of making same
PCT/US2003/033945 WO2004044950A2 (fr) 2002-11-07 2003-10-24 Substrat a semi-conducteur presentant un materiau composite en cuivre/diamant et son procede de production

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP12189387.9A Division EP2587536B8 (fr) 2002-11-07 2003-10-24 Substrat semi-conducteur comportant un matériau composite en cuivre/diamant et son procédé de fabrication
EP12189387.9 Division-Into 2012-10-22

Publications (4)

Publication Number Publication Date
EP1576653A3 EP1576653A3 (fr) 2005-08-18
EP1576653A2 EP1576653A2 (fr) 2005-09-21
EP1576653A4 EP1576653A4 (fr) 2008-11-12
EP1576653B1 true EP1576653B1 (fr) 2013-06-12

Family

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Family Applications (2)

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EP12189387.9A Expired - Lifetime EP2587536B8 (fr) 2002-11-07 2003-10-24 Substrat semi-conducteur comportant un matériau composite en cuivre/diamant et son procédé de fabrication
EP03768542.7A Expired - Lifetime EP1576653B1 (fr) 2002-11-07 2003-10-24 Substrat a semi-conducteur presentant un materiau composite en cuivre-diamant et son procede de production

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EP12189387.9A Expired - Lifetime EP2587536B8 (fr) 2002-11-07 2003-10-24 Substrat semi-conducteur comportant un matériau composite en cuivre/diamant et son procédé de fabrication

Country Status (10)

Country Link
US (1) US6727117B1 (fr)
EP (2) EP2587536B8 (fr)
JP (1) JP2006505951A (fr)
KR (1) KR100745872B1 (fr)
CN (2) CN1768420A (fr)
AU (1) AU2003291654A1 (fr)
CA (2) CA2505593C (fr)
HK (1) HK1080994A1 (fr)
IL (1) IL168429A (fr)
WO (1) WO2004044950A2 (fr)

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JP3893681B2 (ja) 1997-08-19 2007-03-14 住友電気工業株式会社 半導体用ヒートシンクおよびその製造方法
US6211463B1 (en) * 1998-01-26 2001-04-03 Saint-Gobain Industrial Ceramics, Inc. Electronic circuit package with diamond film heat conductor
US6106957A (en) 1998-03-19 2000-08-22 Smith International, Inc. Metal-matrix diamond or cubic boron nitride composites
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CA2800957C (fr) 2015-03-17
EP2587536B1 (fr) 2016-12-07
EP1576653A4 (fr) 2008-11-12
WO2004044950A3 (fr) 2005-08-18
WO2004044950A2 (fr) 2004-05-27
CN102214620B (zh) 2013-09-11
CN1768420A (zh) 2006-05-03
IL168429A (en) 2011-12-29
JP2006505951A (ja) 2006-02-16
EP1576653A2 (fr) 2005-09-21
CN102214620A (zh) 2011-10-12
CA2505593A1 (fr) 2004-05-27
AU2003291654A1 (en) 2004-06-03
KR20050084963A (ko) 2005-08-29
CA2800957A1 (fr) 2004-05-27
CA2505593C (fr) 2013-03-19
US6727117B1 (en) 2004-04-27
EP2587536A1 (fr) 2013-05-01
AU2003291654A8 (en) 2004-06-03
HK1080994A1 (en) 2006-05-04
EP2587536B8 (fr) 2017-03-29
KR100745872B1 (ko) 2007-08-02

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