KR100786488B1 - 전력 반도체 장치 - Google Patents
전력 반도체 장치 Download PDFInfo
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- KR100786488B1 KR100786488B1 KR1020057024779A KR20057024779A KR100786488B1 KR 100786488 B1 KR100786488 B1 KR 100786488B1 KR 1020057024779 A KR1020057024779 A KR 1020057024779A KR 20057024779 A KR20057024779 A KR 20057024779A KR 100786488 B1 KR100786488 B1 KR 100786488B1
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Abstract
Description
Claims (146)
- 게이트, 드레인 영역, 소스 영역 및 채널 영역을 구비하는 적어도 하나의 트랜지스터를 포함하고, 상기 게이트는 전기적 전도성 재료를 포함하며, 상기 트랜지스터의 게이트 길이는 전기적 전도성 재료층의 증착 두께와 대략 동일한, 반도체 다이;상기 반도체 다이 내의 활성 영역 - 상기 적어도 하나의 트랜지스터의 상기 채널 영역은 상기 활성 영역 내에 존재함 - ; 및상기 활성 영역을 둘러싸고, 폭이 10미크론보다 넓고 깊이가 4미크론보다 깊은 유전체 플랫폼을 포함하는 반도체 장치.
- 제1항에 있어서,상기 다이는, 상기 활성 영역이 위치하는 에피택셜층을 포함하고,상기 다이는, 상기 활성 영역 아래의 다량으로 도핑된(heavily doped) 영역을 포함하고,상기 유전체 플랫폼은 상기 에피택셜층으로부터 상기 에피택셜층을 통해 상기 다량으로 도핑된 영역까지 적어도 4미크론 연장되는 반도체 장치.
- 제2항에 있어서,상기 에피택셜층은 상기 다이의 상부면에 인접하여 위치하고,상기 유전체 플랫폼은,유전체 재료로 이루어지며, 최(最)내부가 활성 영역의 외부와 접하는 유전체 재료의 내벽을 갖는, 수직 구조의 매트릭스의 경계를 규정하는 복수의 공동을 갖는 영역을 포함하는 반도체 장치.
- 제3항에 있어서,상기 공동의 상부는, 유전체 재료의 충전물(plug)로 채워지고,상기 공동의 하부는, 공기로 채워지는 반도체 장치.
- 제4항에 있어서,상기 유전체 플랫폼의 영역은 상기 반도체 다이의 총 영역의 적어도 10%와 동일하며,상기 유전체 플랫폼은, 상기 활성 영역을 브리지하는 상기 내벽 상의 상기 유전체 재료에 연결되며 상기 공동의 하부에 인접하는, 다량으로 도핑된 영역 내에 유전체 재료를 더 포함하는 반도체 장치.
- 제5항에 있어서,상기 유전체 재료는 이산화 실리콘이고, 상기 적어도 하나의 트랜지스터는 수직 FET(vertical field effect transistor)인 반도체 장치.
- 제3항에 있어서,상기 활성 영역은 상기 적어도 하나의 트랜지스터를 포함하는 트랜지스터 셀의 배열을 포함하고, 상기 트랜지스터 셀의 배열의 각 셀은 소스 영역, 게이트 및 드레인 영역을 가지며, 상기 트랜지스터 셀의 배열의 각 셀의 상기 드레인 영역들은 서로 연결되는 반도체 장치.
- 제7항에 있어서,상기 유전체 플랫폼 위에 위치하며, 상기 셀의 게이트에 연결되는 금속 게이트 상호 접속(interconnection);상기 다이의 상부면 상에 위치하며, 상기 셀의 소스 영역에 연결되는 금속 소스 상호 접속; 및상기 다이의 하부면 상에 위치하며, 상기 셀의 드레인 영역에 연결되는 금속 드레인 상호 접속을 더 포함하는 반도체 장치.
- 제8항에 있어서,상기 소스 상호 접속은,상기 활성 영역 위에 위치하는 평면인 소스 금속화층; 및상기 셀의 소스 영역에 그 하단부가 연결되고, 금속화층에 상부가 연결됨으로써, 상기 셀의 모든 소스 영역을 병렬로 전기적으로 접속하는 금속 기둥(post)을 포함하는 반도체 장치.
- 제9항에 있어서,상기 소스 금속화층에 연결되는 외부 소스 리드;상기 게이트 상호 접속에 연결되는 외부 게이트 리드; 및상기 드레인 상호 접속에 연결되는 외부 드레인 리드를 포함하는, 다이를 위한 패키지를 더 포함하고,상기 소스 리드에서 상기 드레인 리드로 상기 장치를 통해, 전류가 수직으로 흐르는 반도체 장치.
- 제10항에 있어서,상기 다이와 패키지는, 500MHz보다 높은 주파수에서 동작하고 5W보다 많은 전력을 소비하는 RF(radio frequency) 전력 트랜지스터를 제공하기 위해 구성되는 반도체 장치.
- 제10항에 있어서,상기 각 셀의 게이트는 상기 금속 소스 상호 접속의 적어도 일부를 둘러싸고, 상기 다이의 상부면 상의 전도성 경로는 상기 게이트 상호 접속에 모든 게이트를 서로 병렬로 연결하는 반도체 장치.
- 제12항에 있어서,게이트와 드레인간 커패시턴스를 줄이기 위해, 상기 셀의 게이트에 인접하는 상기 다이의 상부면 상에 접지 차폐판을 더 포함하는 반도체 장치.
- 제13항에 있어서,상기 접지 차폐판은, 게이트와 드레인간 커패시턴스를 줄이기 위해, 상기 전도성 경로와 게이트 상호 접속의 적어도 일부 아래에 더 위치하는 반도체 장치.
- 제13항에 있어서,상기 소스 영역은 접지 전위에 연결되고, 상기 유전체 플랫폼에 인접한 판의 일부는, 상기 소스 영역에 전기적으로 연결되는 상기 다이 내의 반도체성 영역에 연결되는 반도체 장치.
- 제12항에 있어서,상기 트랜지스터 셀의 배열의 각 셀은 채널 영역을 포함하고,각 셀에 대해서 상기 각 셀의 게이트는 상기 소스 영역과 드레인 영역 간의 상기 다이 내의 각 셀의 상기 채널 영역 위에 위치하며,상기 게이트는 수평부와 수직부를 갖는 적어도 하나의 폴리실리콘층으로 형성되고,상기 수직부는 상기 전도성 경로에 연결되는 반도체 장치.
- 제16항에 있어서,상기 게이트는 2개의 폴리실리콘층을 포함하는 반도체 장치.
- 제17항에 있어서,셀의 상기 채널 영역의 길이는 상기 폴리실리콘층 중 적어도 하나의 수평부의 폭에 의해 규정되는 반도체 장치.
- 제16항에 있어서,각 셀의 상기 채널 영역은 실질적으로 일정한 도핑 농도를 갖는 반도체 장치.
- 제2항에 있어서,상기 에피택셜층은, 전기적 저항을 낮추어 상기 장치를 통한 전류 흐름을 용이하게 하기 위해, 다량으로 도핑된 영역보다 더 다량으로 도핑되는 영역을 포함하는 반도체 장치.
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- 제9항에 있어서,상기 각 셀의 상기 소스 영역과 상기 게이트는 치수가 직사각형이고, 상기 금속 기둥은 셀에서의 열 발산을 용이하게 하기 위해 직사각형인 반도체 장치.
- 제7항에 있어서,상기 활성 영역은 상기 셀에서의 열 발산을 용이하게 하기 위해 연장된 직사각형인 반도체 장치.
- 제7항에 있어서,상기 다이는, 상기 셀에서의 열 발산을 용이하게 하기 위해 서로 전기적으로 절연된 복수의 활성 영역 뱅크(bank)를 포함하는 반도체 장치.
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- 제1항에 있어서,상기 트랜지스터의 게이트 길이는 비포토리소그래피로 결정되고,상기 전기적 전도성 재료는 폴리실리콘을 포함하는 반도체 장치.
- 제1항에 있어서,상기 반도체 다이는 상기 반도체 다이의 제1 표면에서 상기 반도체 다이까지 연장되는 에피텍셜층을 포함하고, 상기 활성 영역은 상기 에피택셜층 내에 존재하며, 상기 유전체 플랫폼은 상기 반도체 다이의 제1 표면에서 상기 에피택셜층을 통해 연장되며, 상기 유전체 플랫폼은 유전체 지지 구조이고, 상기 유전체 지지 구조 위에 전기적 상호 접속, 수동 소자 또는 능동 장치를 지지하기 위한 것인 반도체 장치.
- 제1항에 있어서,상기 유전체 플랫폼의 유전율은 이산화 실리콘의 유전율과 동일하거나 작고, 상기 유전체 플랫폼은 상기 적어도 하나의 트랜지스터의 형성 이전에 형성되는 반도체 장치.
- 제1항에 있어서,상기 반도체 다이는 에피택셜층을 포함하고, 상기 유전체 플랫폼은 상기 에피택셜층을 통하여 연장되는 유전체 재료의 복수의 지지 구조를 포함하는 반도체 장치.
- 제142항에 있어서,상기 복수의 지지 구조는 공동에 의해 분리되고, 상기 공동의 상부는 유전체 재료의 충전물로 피복되며, 상기 공동의 하부는 재료로 채워지지 않는 반도체 장치.
- 제142항에 있어서,상기 유전체 구조는 적어도 하나의 공동을 포함하는 반도체 장치.
- 제144항에 있어서,상기 적어도 하나의 공동은 상기 에피택셜층의 표면과 수평으로 덮이는 반도체 장치.
- 제144항에 있어서,상기 적어도 하나의 공동은 유전체 재료로 채워지는 반도체 장치.
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2005
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US20070090434A1 (en) | 2007-04-26 |
WO2005069378A2 (en) | 2005-07-28 |
KR20070093150A (ko) | 2007-09-17 |
WO2005069378A3 (en) | 2006-03-09 |
US20130328132A1 (en) | 2013-12-12 |
US20070057289A1 (en) | 2007-03-15 |
US9177866B2 (en) | 2015-11-03 |
EP1654765A2 (en) | 2006-05-10 |
US20160056084A1 (en) | 2016-02-25 |
US20060226451A1 (en) | 2006-10-12 |
US7898057B2 (en) | 2011-03-01 |
US20100032750A1 (en) | 2010-02-11 |
US9865590B2 (en) | 2018-01-09 |
US8471378B2 (en) | 2013-06-25 |
KR20060103395A (ko) | 2006-09-29 |
JP2007505505A (ja) | 2007-03-08 |
US20150221558A1 (en) | 2015-08-06 |
US9029946B2 (en) | 2015-05-12 |
US20160329320A1 (en) | 2016-11-10 |
US7847369B2 (en) | 2010-12-07 |
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