JP2006505951A - 銅/ダイヤモンドの複合材料を有する半導体基板及びその製造方法 - Google Patents
銅/ダイヤモンドの複合材料を有する半導体基板及びその製造方法 Download PDFInfo
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Abstract
Description
Claims (19)
- 互いに対向する複数の面を持つ本体部を有し、複数の純銅層を有する金属性基板を含む半導体パッケージであって、前記本体部が少なくとも部分的に銅/ダイヤモンドの複合材料からなることを特徴とする半導体パッケージ。
- 前記本体部全体が、銅/ダイヤモンドの複合材料からなることを特徴とする請求項1に記載の半導体パッケージ。
- 前記本体部が、内部に銅/ダイヤモンドの複合材料からなる部分を含む銅/タングステンの複合材料からなることを特徴とする請求項1に記載の半導体パッケージ。
- 前記複数の銅層の一つの層上に設けられたチップと、前記チップに隣接する前記一対の銅層の一方の層上に設けられた複数の絶縁体と、前記絶縁体上に設けられた複数のリード線と、前記チップに前記リード線を結合する複数の結合ワイヤーと、を更に含むことを特徴とする請求項1に記載の半導体パッケージ。
- 前記本体部が、互いに対向する面間で一様に均一な厚みを有する一様な平面構造からなり、前記一対の銅層は相対的に薄く、一様な平面構造からなることを特徴とする請求項1に記載の半導体パッケージ。
- 前記銅/ダイヤモンドの複合材料は、銅基質中のダイヤモンド粒子からなることを特徴とする請求項1に記載の半導体パッケージ。
- 前記ダイヤモンド粒子は、Cr、W、Mo、Co、Cu、Ti、Si、SiC、TiN、TiC、Ta、Zrのうちの一または二以上の材料で被覆されることを特徴とする請求項6に記載の半導体パッケージ。
- 前記ダイヤモンド粒子は、Cr層、W層、Co層、Cu層で被覆されることを特徴とする請求項6に記載の半導体パッケージ。
- 半導体パッケージであって、
金属性基板と、前記基板上に設けられたチップと、前記チップに隣接した前記基板上に設けられたセラミックのリードフレーム絶縁体と、前記リードフレーム絶縁体上に設けられ前記チップに電気的に接続される金属リード線とを含み、前記基板は、少なくとも部分的に銅基質中のダイヤモンド粒子からなる複合材料で構成された、一様平面状の本体部からなることを特徴とする半導体パッケージ。 - 前記本体部は、互いに対向する面間で相対的に均一な厚みからなり、前記本体部の前記互いに対向する面上に形成される一対の純銅層を更に含むことを特徴とする請求項9に記載の半導体パッケージ。
- 前記本体部全体が、銅基質中のダイヤモンド粒子からなる複合材料で構成されることを特徴とする請求項9に記載の半導体パッケージ。
- 前記本体部が、内部に銅基質中のダイヤモンド粒子からなる部分を有する銅/タングステンの複合材料からなることを特徴とする請求項9に記載の半導体パッケージ。
- 銅/ダイヤモンドの複合材料の製造方法であって、
特定の分子または無機化合物の多層膜でダイヤモンド粒子を被覆するステップと、
前記被覆された粒子を乾式加工成形剤とともに混合するステップと、
圧縮本体部を形成するように、前記粒子を加圧下でチップに圧縮成形するステップと、
前記圧縮本体部を銅の一部に隣接して配置し、前記成形剤を蒸発または分解させるように真空環境下または湿水素雰囲気下で加熱するステップと、
前記圧縮本体部を、前記被覆されたダイヤモンド粒子を結合または部分焼結させるように真空環境下または水素雰囲気下で加熱するステップと、
前記圧縮本体部を、銅が融解するように銅の融点を少し上回る温度に水素雰囲気下で加熱し、結合または部分焼結させた前記ダイヤモンド粒子中に前記銅を引き込むステップと、
前記圧縮本体部を冷却するステップと、
前記圧縮本体部を所望の形状に切断するステップと、
を備えていることを特徴とする銅/ダイヤモンドの複合材料の製造方法。 - 前記圧縮本体部の互いに対向する面上に、純銅層を形成するステップを更に備えることを特徴とする請求項13に記載の方法。
- 銅/タングステンの複合材料を与えるステップと、
前記圧縮本体部を前記銅/タングステンの複合材料と一体化させるように、前記圧縮本体部と前記銅/タングステンの複合材料とを銅の融点以上に加熱するステップと、
を更に備えることを特徴とする請求項13に記載の方法。 - 前記圧縮本体部の前記冷却ステップが、
前記圧縮本体部を部分冷却するステップと、
前記圧縮本体部周囲を低圧雰囲気にするステップと、
前記圧縮本体部を、前記銅から溶解水素を除去するために十分な間、銅の融点以上に再加熱するステップと、
を備えていることを特徴とする請求項13に記載の方法。 - 特定の分子または無機化合物の多層膜でダイヤモンド粒子を被覆する前記ステップが、流動層化学気相堆積法または自触媒水性化学めっき法を使用して前記ダイヤモンド粒子を被覆することを含むことを特徴とする請求項13に記載の方法。
- 分子または無機化合物の多層膜でダイヤモンド粒子を被覆する前記ステップが、前記ダイヤモンド粒子をCr、W、Mo、Co、Cu、Ti、Si、SiC、TiN、TiC、Ta、Zrのうちの一または二以上の材料で被覆することを含むことを特徴とする請求項13に記載の方法。
- 分子または無機化合物の層でダイヤモンド粒子を被覆する前記ステップが、前記ダイヤモンド粒子をCr層、続いて順にW層、Co層、Cu層で被覆することを含むことを特徴とする請求項13に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US10/291,126 US6727117B1 (en) | 2002-11-07 | 2002-11-07 | Semiconductor substrate having copper/diamond composite material and method of making same |
PCT/US2003/033945 WO2004044950A2 (en) | 2002-11-07 | 2003-10-24 | Semiconductor substrate having copper/diamond composite material and method of making same |
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JP2006505951A true JP2006505951A (ja) | 2006-02-16 |
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JP2004551578A Pending JP2006505951A (ja) | 2002-11-07 | 2003-10-24 | 銅/ダイヤモンドの複合材料を有する半導体基板及びその製造方法 |
Country Status (10)
Country | Link |
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US (1) | US6727117B1 (ja) |
EP (2) | EP1576653B1 (ja) |
JP (1) | JP2006505951A (ja) |
KR (1) | KR100745872B1 (ja) |
CN (2) | CN1768420A (ja) |
AU (1) | AU2003291654A1 (ja) |
CA (2) | CA2800957C (ja) |
HK (1) | HK1080994A1 (ja) |
IL (1) | IL168429A (ja) |
WO (1) | WO2004044950A2 (ja) |
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JP2012038875A (ja) * | 2010-08-06 | 2012-02-23 | Toshiba Corp | 高周波半導体用パッケージおよびその作製方法 |
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JP2013115096A (ja) * | 2011-11-25 | 2013-06-10 | Tomei Diamond Co Ltd | ダイヤモンド含有ヒートシンク材及びその製法 |
US10115655B2 (en) | 2014-10-09 | 2018-10-30 | Superufo291 Tec | Heat dissipation substrate and method for producing heat dissipation substrate |
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KR100745872B1 (ko) | 2007-08-02 |
WO2004044950A2 (en) | 2004-05-27 |
CA2800957A1 (en) | 2004-05-27 |
EP2587536B1 (en) | 2016-12-07 |
US6727117B1 (en) | 2004-04-27 |
CA2505593C (en) | 2013-03-19 |
EP2587536B8 (en) | 2017-03-29 |
IL168429A (en) | 2011-12-29 |
EP1576653A4 (en) | 2008-11-12 |
CN102214620A (zh) | 2011-10-12 |
CN102214620B (zh) | 2013-09-11 |
AU2003291654A8 (en) | 2004-06-03 |
EP2587536A1 (en) | 2013-05-01 |
HK1080994A1 (en) | 2006-05-04 |
CA2505593A1 (en) | 2004-05-27 |
CA2800957C (en) | 2015-03-17 |
CN1768420A (zh) | 2006-05-03 |
EP1576653A2 (en) | 2005-09-21 |
EP1576653B1 (en) | 2013-06-12 |
KR20050084963A (ko) | 2005-08-29 |
AU2003291654A1 (en) | 2004-06-03 |
WO2004044950A3 (en) | 2005-08-18 |
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