CA2800957A1 - Substrat a semi-conducteur presentant un materiau composite en cuivre/diamant et son procede de production - Google Patents
Substrat a semi-conducteur presentant un materiau composite en cuivre/diamant et son procede de production Download PDFInfo
- Publication number
- CA2800957A1 CA2800957A1 CA2800957A CA2800957A CA2800957A1 CA 2800957 A1 CA2800957 A1 CA 2800957A1 CA 2800957 A CA2800957 A CA 2800957A CA 2800957 A CA2800957 A CA 2800957A CA 2800957 A1 CA2800957 A1 CA 2800957A1
- Authority
- CA
- Canada
- Prior art keywords
- copper
- diamond
- compacted body
- diamond particles
- composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 title claims abstract description 86
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 83
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 239000010432 diamond Substances 0.000 title claims abstract description 68
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 56
- 239000002131 composite material Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 title abstract description 38
- 239000004065 semiconductor Substances 0.000 title abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 30
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 17
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 16
- UDKYUQZDRMRDOR-UHFFFAOYSA-N tungsten Chemical compound [W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W] UDKYUQZDRMRDOR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000010937 tungsten Substances 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims abstract description 9
- 239000011230 binding agent Substances 0.000 claims abstract description 8
- 150000002484 inorganic compounds Chemical class 0.000 claims abstract description 8
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910034327 TiC Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 6
- 150000001879 copper Chemical class 0.000 abstract description 5
- 239000011159 matrix material Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01066—Dysprosium [Dy]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/291,126 | 2002-11-07 | ||
| US10/291,126 US6727117B1 (en) | 2002-11-07 | 2002-11-07 | Semiconductor substrate having copper/diamond composite material and method of making same |
| CA2505593A CA2505593C (fr) | 2002-11-07 | 2003-10-24 | Substrat a semi-conducteur presentant un materiau composite en cuivre/diamant et son procede de production |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2505593A Division CA2505593C (fr) | 2002-11-07 | 2003-10-24 | Substrat a semi-conducteur presentant un materiau composite en cuivre/diamant et son procede de production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2800957A1 true CA2800957A1 (fr) | 2004-05-27 |
| CA2800957C CA2800957C (fr) | 2015-03-17 |
Family
ID=32107653
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2505593A Expired - Lifetime CA2505593C (fr) | 2002-11-07 | 2003-10-24 | Substrat a semi-conducteur presentant un materiau composite en cuivre/diamant et son procede de production |
| CA2800957A Expired - Lifetime CA2800957C (fr) | 2002-11-07 | 2003-10-24 | Substrat a semi-conducteur presentant un materiau composite en cuivre/diamant et son procede de production |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2505593A Expired - Lifetime CA2505593C (fr) | 2002-11-07 | 2003-10-24 | Substrat a semi-conducteur presentant un materiau composite en cuivre/diamant et son procede de production |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6727117B1 (fr) |
| EP (2) | EP2587536B8 (fr) |
| JP (1) | JP2006505951A (fr) |
| KR (1) | KR100745872B1 (fr) |
| CN (2) | CN1768420A (fr) |
| AU (1) | AU2003291654A1 (fr) |
| CA (2) | CA2505593C (fr) |
| HK (1) | HK1080994A1 (fr) |
| IL (1) | IL168429A (fr) |
| WO (1) | WO2004044950A2 (fr) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT6666U1 (de) * | 2002-09-23 | 2004-01-26 | Plansee Ag | Wärmesenke aus diamant-haltigem verbundwerkstoff mit mehrlagigem überzug |
| JP2004146413A (ja) * | 2002-10-22 | 2004-05-20 | Sumitomo Electric Ind Ltd | 半導体素子収納用パッケージおよび半導体装置 |
| JP2004200346A (ja) * | 2002-12-18 | 2004-07-15 | Sumitomo Electric Ind Ltd | 半導体素子収納用パッケージ、その製造方法及び半導体装置 |
| US7298046B2 (en) * | 2003-01-10 | 2007-11-20 | Kyocera America, Inc. | Semiconductor package having non-ceramic based window frame |
| US7861768B1 (en) * | 2003-06-11 | 2011-01-04 | Apple Inc. | Heat sink |
| US7279023B2 (en) * | 2003-10-02 | 2007-10-09 | Materials And Electrochemical Research (Mer) Corporation | High thermal conductivity metal matrix composites |
| KR100786488B1 (ko) | 2004-01-10 | 2007-12-18 | 에이치브이브이아이 세미콘덕터즈, 인크. | 전력 반도체 장치 |
| US8530963B2 (en) | 2005-01-06 | 2013-09-10 | Estivation Properties Llc | Power semiconductor device and method therefor |
| US7335534B2 (en) * | 2005-01-10 | 2008-02-26 | Hvvi, Semiconductors, Inc. | Semiconductor component and method of manufacture |
| US7605451B2 (en) * | 2006-06-27 | 2009-10-20 | Hvvi Semiconductors, Inc | RF power transistor having an encapsulated chip package |
| US20080017998A1 (en) * | 2006-07-19 | 2008-01-24 | Pavio Jeanne S | Semiconductor component and method of manufacture |
| CN100400689C (zh) * | 2007-04-10 | 2008-07-09 | 天津大学 | 化学共沉积制备纳米金刚石增强铜基复合材料的方法 |
| CN101139515B (zh) * | 2007-05-18 | 2010-08-18 | 中南大学 | 一种高导热金刚石-铜复合封装材料及其制备方法 |
| CN101070461B (zh) * | 2007-05-18 | 2011-04-20 | 中南大学 | 一种超高导热金刚石-铜复合封装材料及其生产方法 |
| US8067834B2 (en) * | 2007-08-21 | 2011-11-29 | Hvvi Semiconductors, Inc. | Semiconductor component |
| US20090108437A1 (en) * | 2007-10-29 | 2009-04-30 | M/A-Com, Inc. | Wafer scale integrated thermal heat spreader |
| US7660335B2 (en) * | 2008-04-17 | 2010-02-09 | Lasertel, Inc. | Liquid cooled laser bar arrays incorporating diamond/copper expansion matched materials |
| US8828804B2 (en) * | 2008-04-30 | 2014-09-09 | Infineon Technologies Ag | Semiconductor device and method |
| US7754533B2 (en) * | 2008-08-28 | 2010-07-13 | Infineon Technologies Ag | Method of manufacturing a semiconductor device |
| TWI387417B (zh) | 2008-08-29 | 2013-02-21 | Ind Tech Res Inst | 電路板結構及其製作方法 |
| WO2010027504A1 (fr) * | 2008-09-08 | 2010-03-11 | Materials And Electrochemical Research (Mer) Corporation | Structure de matériaux composites à matrice métallique à base de métal/diamant usinable et son procédé de fabrication |
| US20100208431A1 (en) * | 2008-10-09 | 2010-08-19 | Dugas Matthew P | Patterned Composite Structures and Methods of Making the Same |
| AT11107U1 (de) * | 2008-11-20 | 2010-04-15 | Plansee Se | Wärmesenke sowie verfahren zu deren herstellung |
| US20100139885A1 (en) * | 2008-12-09 | 2010-06-10 | Renewable Thermodynamics, Llc | Sintered diamond heat exchanger apparatus |
| US20100319895A1 (en) * | 2009-06-19 | 2010-12-23 | Wei-En Chen | Heat spreader structure and method of manufacturing the same |
| MX2012000264A (es) * | 2009-06-24 | 2012-06-01 | Third Millennium Metals Llc | Composicion cobre-carbon. |
| US8637379B2 (en) * | 2009-10-08 | 2014-01-28 | Infineon Technologies Ag | Device including a semiconductor chip and a carrier and fabrication method |
| WO2011049479A1 (fr) * | 2009-10-21 | 2011-04-28 | Andrey Mikhailovich Abyzov | Matériau composite ayant une conductivité thermique élevée et son procédé de fabrication |
| CN101706226B (zh) * | 2009-11-23 | 2012-01-25 | 陈盈同 | 一种散热结构及其制造方法 |
| JP5450313B2 (ja) | 2010-08-06 | 2014-03-26 | 株式会社東芝 | 高周波半導体用パッケージおよびその作製方法 |
| JP2014517141A (ja) | 2011-03-04 | 2014-07-17 | サード ミレニアム メタルズ エル エル シー | アルミニウム−炭素複合体 |
| JP5896400B2 (ja) * | 2011-11-25 | 2016-03-30 | トーメイダイヤ株式会社 | ダイヤモンド含有ヒートシンク材及びその製法 |
| US9117793B2 (en) | 2012-06-29 | 2015-08-25 | Materion Corporation | Air cavity packages having high thermal conductivity base plates and methods of making |
| CN104733399A (zh) * | 2013-12-24 | 2015-06-24 | 北京有色金属研究总院 | 一种层状高导热绝缘基板及其制备方法 |
| CN104046833A (zh) * | 2014-06-18 | 2014-09-17 | 南昌航空大学 | 一种高导热性能的金刚石/铜复合材料及其制备方法 |
| JP5807935B1 (ja) | 2014-10-09 | 2015-11-10 | 株式会社半導体熱研究所 | 放熱基板と、それを使用した半導体用モジュール |
| CN104651658B (zh) * | 2015-03-17 | 2017-01-11 | 北京科技大学 | 一种新型高导热铜基复合材料制备方法 |
| US10246335B2 (en) * | 2016-05-27 | 2019-04-02 | Baker Hughes, A Ge Company, Llc | Methods of modifying surfaces of diamond particles, and related diamond particles and earth-boring tools |
| US11025031B2 (en) | 2016-11-29 | 2021-06-01 | Leonardo Electronics Us Inc. | Dual junction fiber-coupled laser diode and related methods |
| CN106584263B (zh) * | 2016-12-22 | 2019-08-09 | 清华大学 | 基于纳米金刚石颗粒的大规模芯片减薄方法 |
| CN107326364B (zh) * | 2017-06-02 | 2023-08-11 | 泉州众志金刚石工具有限公司 | 一种Cu-Sn-Ti的金刚石钎焊涂层及其制备方法 |
| US10847336B2 (en) | 2017-08-17 | 2020-11-24 | Bruker AXS, GmbH | Analytical X-ray tube with high thermal performance |
| EP3451376A1 (fr) * | 2017-09-04 | 2019-03-06 | The Provost, Fellows, Foundation Scholars, and The Other Members of Board, of The College of The Holy and Undivided Trinity of Queen Elizabeth | Structures thermiques destinées à dissiper la chaleur et leurs procédés de fabrication |
| WO2020036998A1 (fr) | 2018-08-13 | 2020-02-20 | Lasertel, Inc. | Utilisation d'une carte de circuit imprimé à noyau métallique (pcb) pour la génération d'une commande à impulsion à courant élevé ultra-étroite |
| US11056854B2 (en) | 2018-08-14 | 2021-07-06 | Leonardo Electronics Us Inc. | Laser assembly and related methods |
| US11296481B2 (en) | 2019-01-09 | 2022-04-05 | Leonardo Electronics Us Inc. | Divergence reshaping array |
| US11752571B1 (en) | 2019-06-07 | 2023-09-12 | Leonardo Electronics Us Inc. | Coherent beam coupler |
| CN110482482B (zh) * | 2019-07-24 | 2022-04-19 | 北京科技大学 | 一种绝缘图形化高导热金刚石散热器件的制备方法 |
| WO2021056133A1 (fr) * | 2019-09-23 | 2021-04-01 | 广东工业大学 | Nouvelle feuille composite en diamant à base de céramique et son procédé de préparation |
| CN113206200B (zh) * | 2020-04-17 | 2023-04-07 | 广东聚华印刷显示技术有限公司 | 薄膜封装结构、薄膜封装方法及光电器件 |
| CN113758327B (zh) * | 2021-08-13 | 2022-06-17 | 中南大学 | 一种含铜/金刚石烧结吸液芯的复合vc散热器及其制备方法 |
| CN114192750B (zh) * | 2021-12-15 | 2023-09-22 | 西华大学 | 一种金刚石/铜复合热导材料及其制备方法 |
| US20230352360A1 (en) * | 2022-04-29 | 2023-11-02 | Macom Technology Solutions Holdings, Inc. | Diamond-metal composite high power device packages |
| CN118522707B (zh) * | 2024-07-23 | 2024-09-20 | 合肥阿基米德电子科技有限公司 | 衬板结构、集成pcb驱动结构及其双面散热模块封装结构 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2034550A (en) | 1934-10-25 | 1936-03-17 | Gen Electric | Arcing tip and method for making the same |
| US2401221A (en) | 1943-06-24 | 1946-05-28 | Gen Motors Corp | Method of impregnating porous metal parts |
| US3303026A (en) | 1966-03-11 | 1967-02-07 | Mallory & Co Inc P R | Vacuum infiltrating of tungsten powder bodies with copper-titanium alloys |
| US4333986A (en) | 1979-06-11 | 1982-06-08 | Sumitomo Electric Industries, Ltd. | Diamond sintered compact wherein crystal particles are uniformly orientated in a particular direction and a method for producing the same |
| JPS5921032A (ja) | 1982-07-26 | 1984-02-02 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
| DE3854388T2 (de) * | 1987-06-11 | 1996-05-15 | Baker Hughes Inc | Beschichtete polykristalline diamantkörper, produkte und ihre herstellung. |
| US5011514A (en) * | 1988-07-29 | 1991-04-30 | Norton Company | Cemented and cemented/sintered superabrasive polycrystalline bodies and methods of manufacture thereof |
| US5130771A (en) | 1988-10-11 | 1992-07-14 | Amoco Corporation | Diamond composite heat sink for use with semiconductor devices |
| US5008737A (en) * | 1988-10-11 | 1991-04-16 | Amoco Corporation | Diamond composite heat sink for use with semiconductor devices |
| US5024680A (en) | 1988-11-07 | 1991-06-18 | Norton Company | Multiple metal coated superabrasive grit and methods for their manufacture |
| JP2746279B2 (ja) | 1990-06-18 | 1998-05-06 | 日本タングステン 株式会社 | 半導体装置用基板材料及びその製造方法 |
| US5120495A (en) | 1990-08-27 | 1992-06-09 | The Standard Oil Company | High thermal conductivity metal matrix composite |
| US5045972A (en) | 1990-08-27 | 1991-09-03 | The Standard Oil Company | High thermal conductivity metal matrix composite |
| US5481136A (en) | 1992-10-28 | 1996-01-02 | Sumitomo Electric Industries, Ltd. | Semiconductor element-mounting composite heat-sink base |
| JP3086558B2 (ja) * | 1993-02-19 | 2000-09-11 | 中部電力株式会社 | タービン高圧給水加熱器のトーラスリング自動切断装置 |
| JPH06284556A (ja) * | 1993-03-30 | 1994-10-07 | Meidensha Corp | 三相４線式回路の地絡電流検出方式 |
| US5886407A (en) | 1993-04-14 | 1999-03-23 | Frank J. Polese | Heat-dissipating package for microcircuit devices |
| US6238454B1 (en) | 1993-04-14 | 2001-05-29 | Frank J. Polese | Isotropic carbon/copper composites |
| US5455738A (en) | 1993-07-28 | 1995-10-03 | E-Systems, Inc. | High thermal conductivity, matched CTE. low density mounting plate for a semiconductor circuit |
| US6264882B1 (en) | 1994-05-20 | 2001-07-24 | The Regents Of The University Of California | Process for fabricating composite material having high thermal conductivity |
| US5686676A (en) | 1996-05-07 | 1997-11-11 | Brush Wellman Inc. | Process for making improved copper/tungsten composites |
| GB9626221D0 (en) * | 1996-12-18 | 1997-02-05 | Smiths Industries Plc | Diamond surfaces |
| JP3617232B2 (ja) | 1997-02-06 | 2005-02-02 | 住友電気工業株式会社 | 半導体用ヒートシンクおよびその製造方法ならびにそれを用いた半導体パッケージ |
| KR100217032B1 (ko) | 1997-06-14 | 1999-09-01 | 박호군 | 구리 용침용 텅스텐 골격 구조 제조 방법 및 이를 이용한 텅스텐-구리 복합재료 제조 방법 |
| JP3893681B2 (ja) | 1997-08-19 | 2007-03-14 | 住友電気工業株式会社 | 半導体用ヒートシンクおよびその製造方法 |
| US6211463B1 (en) * | 1998-01-26 | 2001-04-03 | Saint-Gobain Industrial Ceramics, Inc. | Electronic circuit package with diamond film heat conductor |
| US6106957A (en) | 1998-03-19 | 2000-08-22 | Smith International, Inc. | Metal-matrix diamond or cubic boron nitride composites |
| JPH11289037A (ja) * | 1998-04-01 | 1999-10-19 | Sumitomo Metal Electronics Devices Inc | 放熱用金属板およびそれを用いた電子部品用パッケージ |
| US6114048A (en) | 1998-09-04 | 2000-09-05 | Brush Wellman, Inc. | Functionally graded metal substrates and process for making same |
-
2002
- 2002-11-07 US US10/291,126 patent/US6727117B1/en not_active Expired - Lifetime
-
2003
- 2003-10-24 CN CNA2003801065126A patent/CN1768420A/zh active Pending
- 2003-10-24 KR KR1020057008074A patent/KR100745872B1/ko active IP Right Grant
- 2003-10-24 JP JP2004551578A patent/JP2006505951A/ja active Pending
- 2003-10-24 AU AU2003291654A patent/AU2003291654A1/en not_active Abandoned
- 2003-10-24 EP EP12189387.9A patent/EP2587536B8/fr not_active Expired - Lifetime
- 2003-10-24 EP EP03768542.7A patent/EP1576653B1/fr not_active Expired - Lifetime
- 2003-10-24 CA CA2505593A patent/CA2505593C/fr not_active Expired - Lifetime
- 2003-10-24 CA CA2800957A patent/CA2800957C/fr not_active Expired - Lifetime
- 2003-10-24 CN CN2011100405466A patent/CN102214620B/zh not_active Expired - Fee Related
- 2003-10-24 WO PCT/US2003/033945 patent/WO2004044950A2/fr active Application Filing
-
2005
- 2005-05-05 IL IL168429A patent/IL168429A/en active IP Right Grant
-
2006
- 2006-03-20 HK HK06103494.9A patent/HK1080994A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP2587536B8 (fr) | 2017-03-29 |
| CA2505593A1 (fr) | 2004-05-27 |
| AU2003291654A1 (en) | 2004-06-03 |
| CA2800957C (fr) | 2015-03-17 |
| US6727117B1 (en) | 2004-04-27 |
| IL168429A (en) | 2011-12-29 |
| CN1768420A (zh) | 2006-05-03 |
| HK1080994A1 (en) | 2006-05-04 |
| CN102214620A (zh) | 2011-10-12 |
| WO2004044950A3 (fr) | 2005-08-18 |
| WO2004044950A2 (fr) | 2004-05-27 |
| CA2505593C (fr) | 2013-03-19 |
| EP1576653B1 (fr) | 2013-06-12 |
| EP1576653A4 (fr) | 2008-11-12 |
| EP2587536A1 (fr) | 2013-05-01 |
| JP2006505951A (ja) | 2006-02-16 |
| EP1576653A2 (fr) | 2005-09-21 |
| EP2587536B1 (fr) | 2016-12-07 |
| KR20050084963A (ko) | 2005-08-29 |
| CN102214620B (zh) | 2013-09-11 |
| AU2003291654A8 (en) | 2004-06-03 |
| KR100745872B1 (ko) | 2007-08-02 |
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