EP1491662A4 - PROCEDE DE PREPARATION DE CRISTAL SIC ET CRISTAL SiC AINSI PREPARE - Google Patents

PROCEDE DE PREPARATION DE CRISTAL SIC ET CRISTAL SiC AINSI PREPARE

Info

Publication number
EP1491662A4
EP1491662A4 EP03710440A EP03710440A EP1491662A4 EP 1491662 A4 EP1491662 A4 EP 1491662A4 EP 03710440 A EP03710440 A EP 03710440A EP 03710440 A EP03710440 A EP 03710440A EP 1491662 A4 EP1491662 A4 EP 1491662A4
Authority
EP
European Patent Office
Prior art keywords
sic
crystal
substrate
single crystal
sic single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03710440A
Other languages
German (de)
English (en)
Other versions
EP1491662A1 (fr
EP1491662B1 (fr
Inventor
Isaho Kamata
Hidekazu Tsuchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Research Institute of Electric Power Industry
Original Assignee
Central Research Institute of Electric Power Industry
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Research Institute of Electric Power Industry filed Critical Central Research Institute of Electric Power Industry
Publication of EP1491662A1 publication Critical patent/EP1491662A1/fr
Publication of EP1491662A4 publication Critical patent/EP1491662A4/fr
Application granted granted Critical
Publication of EP1491662B1 publication Critical patent/EP1491662B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
EP03710440A 2002-03-19 2003-03-19 Procede de preparation de cristal sic Expired - Lifetime EP1491662B1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002075956 2002-03-19
JP2002075956 2002-03-19
JP2002235865 2002-08-13
JP2002235865 2002-08-13
PCT/JP2003/003363 WO2003078702A1 (fr) 2002-03-19 2003-03-19 Procede de preparation de cristal sic et cristal sic ainsi prepare

Publications (3)

Publication Number Publication Date
EP1491662A1 EP1491662A1 (fr) 2004-12-29
EP1491662A4 true EP1491662A4 (fr) 2008-04-16
EP1491662B1 EP1491662B1 (fr) 2012-02-22

Family

ID=28043768

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03710440A Expired - Lifetime EP1491662B1 (fr) 2002-03-19 2003-03-19 Procede de preparation de cristal sic

Country Status (9)

Country Link
US (1) US7081420B2 (fr)
EP (1) EP1491662B1 (fr)
JP (1) JP4044053B2 (fr)
KR (1) KR100984261B1 (fr)
CN (1) CN1324168C (fr)
AT (1) ATE546569T1 (fr)
AU (1) AU2003221438A1 (fr)
TW (1) TW200307064A (fr)
WO (1) WO2003078702A1 (fr)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4139306B2 (ja) * 2003-10-02 2008-08-27 東洋炭素株式会社 縦型ホットウォールＣＶＤエピタキシャル装置及びＳｉＣエピタキシャル成長方法
JP5285202B2 (ja) * 2004-03-26 2013-09-11 一般財団法人電力中央研究所 バイポーラ型半導体装置およびその製造方法
DE102005017814B4 (de) * 2004-04-19 2016-08-11 Denso Corporation Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2006013005A (ja) * 2004-06-23 2006-01-12 Denso Corp 炭化珪素半導体基板およびその製造方法
JP4976647B2 (ja) * 2004-07-29 2012-07-18 富士電機株式会社 炭化珪素半導体基板の製造方法
JP2007182330A (ja) 2004-08-24 2007-07-19 Bridgestone Corp 炭化ケイ素単結晶ウェハ及びその製造方法
JP2007095873A (ja) * 2005-09-28 2007-04-12 Sumitomo Chemical Co Ltd 電界効果トランジスタ用エピタキシャル基板
JP2007250913A (ja) * 2006-03-16 2007-09-27 Mitsubishi Materials Corp ＳｉＣ基板の製造方法及びＳｉＣ基板並びに半導体デバイス
JP4706565B2 (ja) * 2006-06-08 2011-06-22 株式会社デンソー 炭化珪素単結晶の製造方法
JP2009544171A (ja) * 2006-07-19 2009-12-10 ダウ コ−ニング コ−ポレ−ション キャリアライフタイムが改善された基板を製造する方法
JP4945185B2 (ja) * 2006-07-24 2012-06-06 株式会社東芝 結晶成長方法
US8105955B2 (en) * 2006-08-15 2012-01-31 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with carbon and non-carbon silicon
CN100514562C (zh) * 2006-09-18 2009-07-15 中国科学院半导体研究所 用于MEMS器件的大面积3C-SiC薄膜的制备方法
JP4954654B2 (ja) * 2006-09-21 2012-06-20 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP4853364B2 (ja) * 2007-04-11 2012-01-11 トヨタ自動車株式会社 ＳｉＣ単結晶エピタキシャル薄膜の成長方法
CN101802273B (zh) * 2007-09-12 2013-04-17 昭和电工株式会社 外延SiC单晶衬底及外延SiC单晶衬底的制造方法
US8652255B2 (en) * 2007-10-12 2014-02-18 The United States Of America, As Represented By The Secretary Of The Navy Method of producing epitaxial layers with low basal plane dislocation concentrations
JP5504597B2 (ja) * 2007-12-11 2014-05-28 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
EP2077344B1 (fr) * 2007-12-21 2010-11-03 Condias Gmbh Procédé destiné au dépot d'une couche de diamant sur un substrat de graphite
JP4987792B2 (ja) * 2008-04-17 2012-07-25 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板の製造方法
JP5417760B2 (ja) * 2008-08-01 2014-02-19 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
CN102017159B (zh) * 2008-09-12 2013-06-12 住友电气工业株式会社 碳化硅半导体器件及其制造方法
JP2010095397A (ja) 2008-10-15 2010-04-30 Nippon Steel Corp 炭化珪素単結晶及び炭化珪素単結晶ウェハ
DE102009002129A1 (de) 2009-04-02 2010-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper
DE102009033302B4 (de) * 2009-07-15 2012-01-26 Infineon Technologies Ag Herstellungsverfahren für ein unipolares Halbleiter-Bauelement und Halbleitervorrichtung
JP5353800B2 (ja) * 2010-04-07 2013-11-27 新日鐵住金株式会社 炭化珪素エピタキシャル膜の製造方法
JP4880052B2 (ja) * 2010-05-11 2012-02-22 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP2012004269A (ja) * 2010-06-16 2012-01-05 Sumitomo Electric Ind Ltd 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置
JP6025306B2 (ja) * 2011-05-16 2016-11-16 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
JP5777437B2 (ja) * 2011-07-27 2015-09-09 京セラ株式会社 単結晶基板およびそれを用いた半導体素子
US20130062628A1 (en) * 2011-09-10 2013-03-14 Semisouth Laboratories, Inc. Methods for the epitaxial growth of silicon carbide
KR20130045493A (ko) * 2011-10-26 2013-05-06 엘지이노텍 주식회사 웨이퍼 및 박막 제조 방법
KR20130076365A (ko) * 2011-12-28 2013-07-08 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 제조 방법 및 탄화규소 에피 웨이퍼
SE536605C2 (sv) * 2012-01-30 2014-03-25 Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi
KR101926694B1 (ko) * 2012-05-30 2018-12-07 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
KR101926678B1 (ko) * 2012-05-31 2018-12-11 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
KR101976600B1 (ko) * 2012-06-28 2019-05-09 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 및 이의 제조 방법
KR101657018B1 (ko) * 2012-07-19 2016-09-12 신닛테츠스미킨 카부시키카이샤 SiC 단결정의 제조 장치 및 SiC 단결정의 제조 방법
US8860040B2 (en) * 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
KR102131245B1 (ko) * 2013-06-28 2020-08-05 엘지이노텍 주식회사 에피택셜 웨이퍼
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
JP5857986B2 (ja) * 2013-02-20 2016-02-10 株式会社デンソー 炭化珪素単結晶および炭化珪素単結晶の製造方法
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP6123408B2 (ja) * 2013-03-26 2017-05-10 三菱電機株式会社 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
KR102165614B1 (ko) * 2013-06-28 2020-10-14 엘지이노텍 주식회사 에피택셜 웨이퍼
JP2015143168A (ja) * 2014-01-31 2015-08-06 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素エピタキシャル基板の製造方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
KR102203025B1 (ko) * 2014-08-06 2021-01-14 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 제조 방법
JP2016127201A (ja) * 2015-01-07 2016-07-11 三菱電機株式会社 炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
JP6542347B2 (ja) * 2015-02-18 2019-07-10 昭和電工株式会社 エピタキシャル炭化珪素単結晶ウエハの製造方法及びエピタキシャル炭化珪素単結晶ウエハ
US20170275779A1 (en) * 2015-10-07 2017-09-28 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
JP6579710B2 (ja) * 2015-12-24 2019-09-25 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
US10407769B2 (en) * 2016-03-18 2019-09-10 Goodrich Corporation Method and apparatus for decreasing the radial temperature gradient in CVI/CVD furnaces
JP2017122047A (ja) * 2017-03-29 2017-07-13 三菱電機株式会社 単結晶４Ｈ−ＳｉＣ基板及びその製造方法
WO2018185850A1 (fr) * 2017-04-04 2018-10-11 三菱電機株式会社 Procédé de fabrication de plaquette épitaxiale de carbure de silicium et procédé de fabrication de dispositif à semi-conducteur au carbure de silicium
CN107275209B (zh) * 2017-06-17 2019-08-23 东莞市天域半导体科技有限公司 一种SiC超高压PiN二极管器件材料的制备方法
CN108411368B (zh) * 2018-06-11 2020-12-08 山东大学 一种快速有选择性的降低SiC晶体中微管和位错密度的方法
JP7217608B2 (ja) * 2018-10-16 2023-02-03 昭和電工株式会社 ＳｉＣ基板、ＳｉＣエピタキシャルウェハ及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679153A (en) * 1994-11-30 1997-10-21 Cree Research, Inc. Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
EP1531491A2 (fr) * 1996-04-18 2005-05-18 Matsushita Electric Industrial Co., Ltd. Elément en SIC et son procédé de production
EP0967304B1 (fr) * 1998-05-29 2004-04-07 Denso Corporation Procédé pour la préparation d'un monocristal de carbure de silicium
JP4185215B2 (ja) * 1999-05-07 2008-11-26 弘之 松波 ＳｉＣウエハ、ＳｉＣ半導体デバイス、および、ＳｉＣウエハの製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KAMATA I ET AL: "Structural transformation of screw dislocations via thick 4H-SiC epitaxial growth", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS, SHORT NOTES & REVIEW PAPERS) JAPAN SOC. APPL. PHYS JAPAN, vol. 39, no. 12A, December 2000 (2000-12-01), pages 6496 - 6500, XP002471999, ISSN: 0021-4922 *
KIMOTO TSUNENOBU ET AL: "Chemical vapor deposition and deep level analyses of 4H-SiC(112¯0)", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 89, no. 11, 1 June 2001 (2001-06-01), pages 6105 - 6109, XP012052195, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
WO2003078702A1 (fr) 2003-09-25
TW200307064A (en) 2003-12-01
ATE546569T1 (de) 2012-03-15
KR100984261B1 (ko) 2010-09-30
CN1643188A (zh) 2005-07-20
US7081420B2 (en) 2006-07-25
JPWO2003078702A1 (ja) 2005-07-14
EP1491662A1 (fr) 2004-12-29
CN1324168C (zh) 2007-07-04
KR20040097175A (ko) 2004-11-17
EP1491662B1 (fr) 2012-02-22
JP4044053B2 (ja) 2008-02-06
AU2003221438A1 (en) 2003-09-29
US20050181627A1 (en) 2005-08-18
TWI313309B (fr) 2009-08-11

Similar Documents

Publication Publication Date Title
EP1491662A4 (fr) PROCEDE DE PREPARATION DE CRISTAL SIC ET CRISTAL SiC AINSI PREPARE
JP3707726B2 (ja) 炭化珪素の製造方法、複合材料の製造方法
EP2044244B1 (fr) Procédé de fabrication de substrats à durée de vie de porteurs améliorée
EP2264223A3 (fr) Carbure de silicium sans micro-tuyaux et procédé de fabrication correspondant
JP4733485B2 (ja) 炭化珪素単結晶成長用種結晶の製造方法、炭化珪素単結晶成長用種結晶、炭化珪素単結晶の製造方法、および炭化珪素単結晶
RU2764040C2 (ru) ВЫРАЩИВАНИЕ ЭПИТАКСИАЛЬНОГО 3C-SiC НА МОНОКРИСТАЛЛИЧЕСКОМ КРЕМНИИ
JP2007230823A (ja) 炭化珪素単結晶インゴットの製造方法及び炭化珪素単結晶インゴット
JP4733882B2 (ja) 炭化珪素単結晶及びその製造方法並びに炭化珪素単結晶育成用炭化珪素結晶原料
Takahashi et al. Vapor phase epitaxy of InN using InCl and InCl3 sources
WO2008008407A1 (fr) Matériaux semiconducteurs à large bande
JPH06107494A (ja) ダイヤモンドの気相成長法
US7670856B2 (en) Nitride semiconductor substrate and method of making same
EP1249521B1 (fr) Monocristal en sic et son procede de croissance
Hartmann et al. ZnSe single crystal growth by the method of dissociative sublimation
TW426887B (en) Method for growing nitride compound semiconductor
JP2002274994A (ja) 炭化珪素単結晶の製造方法及びその装置並びに炭化珪素単結晶インゴット
JP4850807B2 (ja) 炭化珪素単結晶育成用坩堝、及びこれを用いた炭化珪素単結晶の製造方法
KR20090053827A (ko) ＧａＮ 박막 템플레이트 기판의 제조 방법, ＧａＮ 박막 템플레이트 기판, 및 ＧａＮ 후막 단결정
EP2668662B1 (fr) Dispositif de semi-conducteur et procédé de croissance d'un cristal de semi-conducteur
JP2005223126A (ja) 単結晶形成用基板、ｉｉｉ族窒化物単結晶の作製方法、およびｉｉｉ族窒化物単結晶
JP2003286099A (ja) Ｉｉｉ族窒化物結晶成長装置およびｉｉｉ族窒化物結晶成長方法
Yoshikawa et al. Direct MOVPE growth of InP on GaAs substrates
Wong et al. Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals
JPH1179896A (ja) 炭化珪素単結晶の製造方法
Bahng et al. Epitaxial growth of β-SiC thin films using bis-trimethylsilylmethane on Si (100) with a polycrystalline buffer layer

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20041014

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

A4 Supplementary search report drawn up and despatched

Effective date: 20080319

17Q First examination report despatched

Effective date: 20090309

RTI1 Title (correction)

Free format text: METHOD FOR PREPARING SIC CRYSTAL

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: LT

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 546569

Country of ref document: AT

Kind code of ref document: T

Effective date: 20120315

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 60340058

Country of ref document: DE

Effective date: 20120419

REG Reference to a national code

Ref country code: SE

Ref legal event code: TRGR

REG Reference to a national code

Ref country code: NL

Ref legal event code: VDEP

Effective date: 20120222

LTIE Lt: invalidation of european patent or patent extension

Effective date: 20120222

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120622

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120523

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

Ref country code: BE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 546569

Country of ref document: AT

Kind code of ref document: T

Effective date: 20120222

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120331

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

26N No opposition filed

Effective date: 20121123

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20120522

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120331

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120331

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120319

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 60340058

Country of ref document: DE

Effective date: 20121123

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120602

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120522

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120522

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20120222

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120319

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20030319

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 14

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 15

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20170213

Year of fee payment: 15

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 60340058

Country of ref document: DE

Representative=s name: PATENTANWAELTE HENKEL, BREUER & PARTNER MBB, DE

Ref country code: DE

Ref legal event code: R081

Ref document number: 60340058

Country of ref document: DE

Owner name: SHOWA DENKO K.K., JP

Free format text: FORMER OWNER: CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY, TOKYO, JP

Ref country code: DE

Ref legal event code: R082

Ref document number: 60340058

Country of ref document: DE

Representative=s name: HENKEL & PARTNER MBB PATENTANWALTSKANZLEI, REC, DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180331

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20220203

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 20220210

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 60340058

Country of ref document: DE

REG Reference to a national code

Ref country code: SE

Ref legal event code: EUG