EP1393127A4 - BACK ALIGNMENT SYSTEM AND METHOD - Google Patents
BACK ALIGNMENT SYSTEM AND METHODInfo
- Publication number
- EP1393127A4 EP1393127A4 EP02726815A EP02726815A EP1393127A4 EP 1393127 A4 EP1393127 A4 EP 1393127A4 EP 02726815 A EP02726815 A EP 02726815A EP 02726815 A EP02726815 A EP 02726815A EP 1393127 A4 EP1393127 A4 EP 1393127A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- ahgnment
- chuck
- substrate
- marks
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Definitions
- the processing steps for fabricating a semiconductor device involve exposing a substrate, such a semiconductor wafer coated with photosensitive material, using a lithographic exposure system.
- This exposure requires aligning the substrate residing on a substrate stage (hereinafter, "chuck") to a reticle having a pattern of a particular device layer and residing on a reticle stage.
- the lithographic system includes an alignment system, such as that disclosed in U.S. Patent No. 5,621,813 (referred to hereinafter as "the '813 patent”), which patent is incorporated herein by reference.
- the reticle is exposed to radiation to which the photosensitive coating is sensitive, to transfer the reticle pattern onto the wafer.
- This alignment and exposure can be performed on a variety of lithography systems such as step and repeat, projection, contact and proximity systems, for example.
- the first of such device layers is aligned to some marking on the wafer, for example, to a flat or notch, as is well known.
- Subsequent layers are then aligned relative to this first layer and/or to each other through the use of alignment marks printed in the kerf region, i.e., the region between exposure fields.
- Typical alignment marks include chevrons, squares, crosses and grouped lines of various orientation.
- the three-dimensional nature the device being produced requires precise alignment of the structure from the frontside through to the backside of the substrate.
- the substrate is processed on one side, and then flipped over and processed on the opposite side to create the desired three-dimensional structure.
- frontside and backside alignment must be performed to ensure the three-dimensional structure is properly aligned. For example, if there is a contact running through from the top to bottom sides of the substrate, it must be precisely aligned to the other elements in the device so that it can provide the necessary electrical contact.
- Optical system 20 includes an image plane IP with an image field IF optically downstream from near second end 22.
- Adjacent second end 22 located at or near image plane IP is a detector 30, preferably in the form of a CCD camera.
- Computer system 32 further includes a memory unit MU capable of storing information, such as digitized ahgnment pattern images, and a hard drive HD.
- Computer system 32 also includes pattern recognition software (PRS) (stored, e.g., in memory unit MU or residing on hard drive HD) for processing images of ahgnment marks imaged onto detector 20 by the ahgnment system optics, as described below.
- PRS pattern recognition software
- Systems 10 and 36 share a movable chuck 50 with an upper surface 52 for supporting a substrate 60 having a perimeter 61, a frontside 62 and a backside 64, and moving the substrate so that it can be precisely positioned relative to projection lens 40 and also optical system 20.
- Substrate 60 includes ahgnment marks 66F on frontside 62 and ahgnment marks 66B on backside 64.
- ahgnment marks 66B are near perimeter 61.
- Ahgnment marks 66B may actually be ahgnment marks 66F in the case where the substrate is simply flipped over and replaced on chuck 50.
- ahgnment marks 66F and 66B can be essentially any pattern that can be digitally stored in computer system 32.
- Exemplary ahgnment marks 66F and 66B include boxes (i.e., squares or rectangles), lines, crosses, grouped lines, etc.
- chuck 50 includes a perimeter 70 with one or more cutout portions 76 sized to accommodate a folding (secondary) optical system 80, such as a prism or mirrors.
- Optical system 80 has a first surface portion 82, which is arranged adjacent substrate backside 64, and a second surface portion 84 extending beyond perimeter 70.
- exemplary optical systems 80 include a right-angled apex-truncated prism (FIG. 2A), a two-mirror system (FIG. 2B) and a combination Amici-prism / right-angle prism (FIG. 2C).
- an optical system 80 is fixed within each cutout portion 76.
- Optical systems 80 provide access by optical system 20 to backside ahgnment marks 66B when optical system 20 is optically coupled to optical system 80
- movable chuck 50 is positioned such that end 24 of optical system 20 is placed adjacent second surface portion 84 of optical system 80 and in optical communication (i.e., optically coupled) therewith.
- ahgnment marks 66B are illuminated by light from hght source 100 via optical fiber 104.
- a fold mirror 110 arranged in cavity 106 may be used to reflect the hght emanating from optical fiber 104 upward toward ahgnment mark
- the hght passes from backside 64 through to frontside 62 of the substrate and is collected by imaging optical system 20 and an image of ahgnment mark 66B is formed onto detector 30.
- the present invention also includes a method performing ahgnment of a substrate with respect to a reference position.
- the method includes establishing the precise location of movable chuck 50 relative to a reference position (.e.g., the optical axis A3 of the projection lens or another part of hthography system 36, such as the reticle image (not shown)) by performing a chuck location calibration.
- a reference position e.g., the optical axis A3 of the projection lens or another part of hthography system 36, such as the reticle image (not shown)
- Chuck position and control system 68 includes, in an exemplary embodiment, an interferometer capable of measuring the position of chuck 50 to within 0.1 micron.
- chuck 50 is attached to a stage 200 capable of moving the chuck in six degrees of freedom.
- Part of the chuck location calibration process includes determining the position of the chuck relative to imaging optical system 20.
- Also stored in computer system 32 e.g., in memory unit MU or hard drive HD) are one or more digitized alignment mark images for use with the PRS.
- Use of the digitized alignment marks allows for a particular known ahgnment mark to be imaged with a higher signal-to-noise ratio (SNR) by processing (e.g., by filtering) the image of the ahgnment mark.
- SNR signal-to-noise ratio
- chuck 50 is moved so that ahgnment marks 66B at the different ahgnment sites AS can be viewed.
- system 10 of FIG. 1 chuck 50 is moved so that optical imaging system 20 is optically coupled to one of optical systems 80 so as to image the corresponding ahgnment mark 66B.
- systems 10 of FIGS. 3 and 5 chuck 50 is moved via chuck position and control system 68 to the predetermined ahgnment site AS so that imaging optical system 20 can capture images of the ahgnment marks associated therewith via detector 30.
- Computer 32 then processes the digitized images of ahgnment marks 66B (e.g., using the PRS) for each ahgnment sites AS and identifies a location associated with each ahgnment mark as indicated by the centroid or other position on the mark. The identified location is then compared to the measured location (i.e., the chuck location reference data) stored in computer system 32 as determined by the chuck location calibration. Once the position of ahgnment marks 66B are compared to the reference data, the amounts of X and Y movement, and the associated rotation around the Z axis needed to achieve proper ahgnment of the substrate for subsequent processing with hthography system 36 are calculated.
- the measured location i.e., the chuck location reference data
- Computer system 32 then sends an electronic signal to chuck position and control system 180 to effectuate movement of the chuck to an ahgnment location, i.e., a location that provides the proper ahgnment of the substrate for the task at hand.
- An example task might be patterning substrate surface 62 with images provided by projection lens 40 as one of the steps in forming a semiconductor device.
- the method can optionally include the use of a chuck target and a separate ahgnment optical system to facilitate the determination of the offsets between the backside ahgnment marks and the position of the reticle key images.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US855486 | 1986-04-24 | ||
US09/855,486 US6525805B2 (en) | 2001-05-14 | 2001-05-14 | Backside alignment system and method |
PCT/US2002/013324 WO2002093253A1 (en) | 2001-05-14 | 2002-04-25 | Backside alignment system and method |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1393127A1 EP1393127A1 (en) | 2004-03-03 |
EP1393127A4 true EP1393127A4 (en) | 2007-02-28 |
Family
ID=25321372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02726815A Withdrawn EP1393127A4 (en) | 2001-05-14 | 2002-04-25 | BACK ALIGNMENT SYSTEM AND METHOD |
Country Status (4)
Country | Link |
---|---|
US (1) | US6525805B2 (ja) |
EP (1) | EP1393127A4 (ja) |
JP (1) | JP4493272B2 (ja) |
WO (1) | WO2002093253A1 (ja) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100579603B1 (ko) * | 2001-01-15 | 2006-05-12 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 |
US7113258B2 (en) * | 2001-01-15 | 2006-09-26 | Asml Netherlands B.V. | Lithographic apparatus |
US6856029B1 (en) * | 2001-06-22 | 2005-02-15 | Lsi Logic Corporation | Process independent alignment marks |
JP2005500175A (ja) * | 2001-08-27 | 2005-01-06 | フロー インターナショナル コーポレイション | 高圧流体ジェットを発生するための装置 |
JP2003273005A (ja) * | 2002-03-18 | 2003-09-26 | Ushio Inc | 露光装置 |
SG102718A1 (en) * | 2002-07-29 | 2004-03-26 | Asml Holding Nv | Lithography tool having a vacuum reticle library coupled to a vacuum chamber |
US6826451B2 (en) * | 2002-07-29 | 2004-11-30 | Asml Holding N.V. | Lithography tool having a vacuum reticle library coupled to a vacuum chamber |
US7528937B1 (en) * | 2002-08-05 | 2009-05-05 | Ultratech, Inc. | Dual-sided substrate measurement apparatus and methods |
EP1477861A1 (en) * | 2003-05-16 | 2004-11-17 | ASML Netherlands B.V. | A method of calibrating a lithographic apparatus, an alignment method, a computer program, a lithographic apparatus and a device manufacturing method |
EP1477862A3 (en) * | 2003-05-16 | 2006-07-05 | ASML Netherlands B.V. | A method of calibrating a lithographic apparatus, an alignment method, a computer program, a lithographic apparatus and a device manufacturing method |
US6861186B1 (en) | 2003-09-25 | 2005-03-01 | International Business Machines Corporation | Method for backside alignment of photo-processes using standard front side alignment tools |
US7083338B2 (en) * | 2003-10-27 | 2006-08-01 | Samsung Electronics Co., Ltd. | Lithography equipment |
US20050118532A1 (en) * | 2003-11-14 | 2005-06-02 | International Business Machines Corporation | Back to Front Alignment with Latent Imaging |
US7292339B2 (en) * | 2004-07-09 | 2007-11-06 | Asml Netherlands B.V. | Alignment method and apparatus, lithographic apparatus, device manufacturing method, and alignment tool |
US7927090B2 (en) | 2004-08-10 | 2011-04-19 | Asml Netherlands B.V. | Imprint lithographic apparatus, device manufacturing method and device manufactured thereby |
US7251018B2 (en) * | 2004-11-29 | 2007-07-31 | Asml Netherlands B.V. | Substrate table, method of measuring a position of a substrate and a lithographic apparatus |
US20060138681A1 (en) * | 2004-12-27 | 2006-06-29 | Asml Netherlands B.V. | Substrate and lithography process using the same |
US7626701B2 (en) | 2004-12-27 | 2009-12-01 | Asml Netherlands B.V. | Lithographic apparatus with multiple alignment arrangements and alignment measuring method |
US20060243711A1 (en) * | 2005-04-29 | 2006-11-02 | Robert Paradis | System and method for aligning a wafer processing system in a laser marking system |
US7342642B2 (en) * | 2005-06-20 | 2008-03-11 | Asml Netherlands B.V. | Pre-aligning a substrate in a lithographic apparatus, device manufacturing method, and device manufactured by the manufacturing method |
US7371663B2 (en) * | 2005-07-06 | 2008-05-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional IC device and alignment methods of IC device substrates |
US8139218B2 (en) * | 2005-07-06 | 2012-03-20 | Asml Netherlands B.V. | Substrate distortion measurement |
US7751047B2 (en) * | 2005-08-02 | 2010-07-06 | Asml Netherlands B.V. | Alignment and alignment marks |
EP1764648B1 (de) * | 2005-09-14 | 2012-05-23 | Thallner, Erich, Dipl.-Ing. | Stempel mit einer Nanostempelstruktur sowie Vorrichtung und Verfahren zu dessen Herstellung |
US7611960B2 (en) * | 2006-04-24 | 2009-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for wafer backside alignment |
US7494830B2 (en) * | 2007-04-06 | 2009-02-24 | Taiwan Semiconductor Manufacturing Company | Method and device for wafer backside alignment overlay accuracy |
US7751067B1 (en) | 2007-05-24 | 2010-07-06 | Ultratech, Inc. | Substrate-alignment using detector of substrate material |
US7847938B2 (en) * | 2007-10-01 | 2010-12-07 | Maskless Lithography, Inc. | Alignment system for optical lithography |
US8482732B2 (en) * | 2007-10-01 | 2013-07-09 | Maskless Lithography, Inc. | Alignment system for various materials and material flows |
NL1036179A1 (nl) * | 2007-11-20 | 2009-05-25 | Asml Netherlands Bv | Lithographic apparatus and method. |
CN101850625B (zh) * | 2009-03-30 | 2013-06-05 | 鸿富锦精密工业(深圳)有限公司 | 制造光学元件的方法 |
KR101769091B1 (ko) * | 2009-08-26 | 2017-08-30 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US8633441B2 (en) * | 2009-09-02 | 2014-01-21 | Asm Assembly Automation Ltd | Die bonding process incorporating infrared vision system |
CN102540781B (zh) * | 2010-12-28 | 2015-09-30 | 上海微电子装备有限公司 | 一种背面对准装置及方法 |
IL219813B (en) * | 2012-05-01 | 2019-07-31 | Matan Digital Printing Ltd | Superimposing images on translucent media |
CN103576467B (zh) * | 2012-08-10 | 2016-02-03 | 上海微电子装备有限公司 | 一种对准装置及对准方法 |
JP6137323B2 (ja) * | 2013-08-26 | 2017-05-31 | 株式会社村田製作所 | 露光装置 |
CN104418295B (zh) * | 2013-08-28 | 2016-12-28 | 无锡华润上华半导体有限公司 | 用于mems的双面微加工方法和mems器件 |
JP6294633B2 (ja) | 2013-10-23 | 2018-03-14 | キヤノン株式会社 | リソグラフィ装置、決定方法及び物品の製造方法 |
US9796045B2 (en) * | 2013-12-19 | 2017-10-24 | Sunpower Corporation | Wafer alignment with restricted visual access |
JP6115543B2 (ja) * | 2014-10-30 | 2017-04-19 | ウシオ電機株式会社 | アライメント装置、露光装置、およびアライメント方法 |
CN105645347B (zh) * | 2014-11-18 | 2017-08-08 | 无锡华润上华半导体有限公司 | 体硅微加工工艺的定位方法 |
CN104714373B (zh) * | 2015-03-23 | 2016-10-19 | 上海新微技术研发中心有限公司 | 硅片正背面图形高精度转移的方法 |
JP6506153B2 (ja) * | 2015-10-27 | 2019-04-24 | 株式会社Screenホールディングス | 変位検出装置および変位検出方法ならびに基板処理装置 |
US12057332B2 (en) * | 2016-07-12 | 2024-08-06 | Ayar Labs, Inc. | Wafer-level etching methods for planar photonics circuits and devices |
JP6785092B2 (ja) * | 2016-08-19 | 2020-11-18 | 株式会社Screenホールディングス | 変位検出装置、変位検出方法および基板処理装置 |
DE102016122353A1 (de) * | 2016-11-21 | 2018-05-24 | Manz Ag | Bearbeitungsanlage |
CN106711074A (zh) * | 2017-01-04 | 2017-05-24 | 京东方科技集团股份有限公司 | 一种基板加工设备及待加工基板的对位控制方法 |
JP6945316B2 (ja) * | 2017-03-24 | 2021-10-06 | キヤノン株式会社 | 検出装置、パターン形成装置、取得方法、検出方法、および物品製造方法 |
JP6980562B2 (ja) * | 2018-02-28 | 2021-12-15 | キヤノン株式会社 | パターン形成装置、アライメントマークの検出方法及びパターン形成方法 |
WO2024022006A1 (zh) * | 2022-07-28 | 2024-02-01 | 华为技术有限公司 | 一种校准系统、测校工具及校准方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60113425A (ja) * | 1983-11-24 | 1985-06-19 | Hitachi Ltd | 半導体露光装置 |
JPS63224327A (ja) * | 1987-03-13 | 1988-09-19 | Nikon Corp | 投影露光装置 |
JPH09139342A (ja) * | 1995-11-15 | 1997-05-27 | Nikon Corp | プリアライメント方法及び装置 |
EP1406126A1 (en) * | 2001-01-15 | 2004-04-07 | ASML Netherlands B.V. | Device manufacturing method |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3752589A (en) | 1971-10-26 | 1973-08-14 | M Kobayashi | Method and apparatus for positioning patterns of a photographic mask on the surface of a wafer on the basis of backside patterns of the wafer |
JPS62160722A (ja) * | 1986-01-09 | 1987-07-16 | Nippon Kogaku Kk <Nikon> | 露光方法 |
JPS62254423A (ja) * | 1986-04-28 | 1987-11-06 | Canon Inc | 半導体焼付装置 |
JPH0650714B2 (ja) * | 1986-07-17 | 1994-06-29 | キヤノン株式会社 | 露光方法 |
JPS63110633A (ja) * | 1986-10-28 | 1988-05-16 | Nec Corp | 縮小投影式露光装置 |
JP2550974B2 (ja) * | 1987-03-13 | 1996-11-06 | 株式会社ニコン | 露光装置 |
JPH01214118A (ja) * | 1988-02-23 | 1989-08-28 | Mitsubishi Electric Corp | 半導体製造装置 |
US4952815A (en) * | 1988-04-14 | 1990-08-28 | Nikon Corporation | Focusing device for projection exposure apparatus |
US5241188A (en) * | 1991-02-01 | 1993-08-31 | Nikon Corporation | Apparatus for detecting a focussing position |
US5621813A (en) | 1993-01-14 | 1997-04-15 | Ultratech Stepper, Inc. | Pattern recognition alignment system |
JP3341269B2 (ja) * | 1993-12-22 | 2002-11-05 | 株式会社ニコン | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 |
US5552892A (en) * | 1994-05-24 | 1996-09-03 | Nikon Corporation | Illumination optical system, alignment apparatus, and projection exposure apparatus using the same |
JPH0982597A (ja) * | 1995-09-13 | 1997-03-28 | Nikon Corp | 露光方法 |
JP3201233B2 (ja) * | 1995-10-20 | 2001-08-20 | ウシオ電機株式会社 | 裏面にアライメント・マークが設けられたワークの投影露光方法 |
JPH1050604A (ja) * | 1996-04-04 | 1998-02-20 | Nikon Corp | 位置管理方法及び位置合わせ方法 |
JPH09312251A (ja) * | 1996-05-22 | 1997-12-02 | Nikon Corp | 投影露光装置 |
JPH1097083A (ja) * | 1996-09-19 | 1998-04-14 | Nikon Corp | 投影露光方法及び投影露光装置 |
US5843831A (en) | 1997-01-13 | 1998-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process independent alignment system |
TW357396B (en) * | 1997-01-17 | 1999-05-01 | Nicon Corp | Exposure device |
JP2998673B2 (ja) * | 1997-01-20 | 2000-01-11 | 日本電気株式会社 | ウェハ、該ウェハの位置合わせ方法および装置 |
US5821549A (en) | 1997-03-03 | 1998-10-13 | Schlumberger Technologies, Inc. | Through-the-substrate investigation of flip-chip IC's |
US5929997A (en) | 1997-07-02 | 1999-07-27 | Winbond Electronics Corp. | Alignment-mark measurements on the backside of a wafer for synchronous wafer alignment |
US5985764A (en) | 1997-12-22 | 1999-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Layer independent alignment system |
JP2000028321A (ja) * | 1998-07-13 | 2000-01-28 | Nikon Corp | 位置検出装置及びこれを用いた露光装置並びに位置検出方法 |
JP2000040657A (ja) * | 1998-07-22 | 2000-02-08 | Nikon Corp | 露光装置 |
JP2001057326A (ja) * | 1999-08-17 | 2001-02-27 | Nikon Corp | 位置計測方法、位置計測装置および露光装置並びに露光方法 |
-
2001
- 2001-05-14 US US09/855,486 patent/US6525805B2/en not_active Expired - Lifetime
-
2002
- 2002-04-25 WO PCT/US2002/013324 patent/WO2002093253A1/en active Application Filing
- 2002-04-25 EP EP02726815A patent/EP1393127A4/en not_active Withdrawn
- 2002-04-25 JP JP2002589874A patent/JP4493272B2/ja not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60113425A (ja) * | 1983-11-24 | 1985-06-19 | Hitachi Ltd | 半導体露光装置 |
JPS63224327A (ja) * | 1987-03-13 | 1988-09-19 | Nikon Corp | 投影露光装置 |
JPH09139342A (ja) * | 1995-11-15 | 1997-05-27 | Nikon Corp | プリアライメント方法及び装置 |
EP1406126A1 (en) * | 2001-01-15 | 2004-04-07 | ASML Netherlands B.V. | Device manufacturing method |
Non-Patent Citations (1)
Title |
---|
See also references of WO02093253A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP1393127A1 (en) | 2004-03-03 |
WO2002093253A9 (en) | 2004-05-13 |
JP4493272B2 (ja) | 2010-06-30 |
US20020167649A1 (en) | 2002-11-14 |
WO2002093253A1 (en) | 2002-11-21 |
US6525805B2 (en) | 2003-02-25 |
JP2004531062A (ja) | 2004-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6525805B2 (en) | Backside alignment system and method | |
EP3258319B1 (en) | Pattern forming apparatus, method for disposing substrate, and method for manufacturing article | |
JP2004517476A (ja) | 基準位置合わせマークに対する基板の位置合わせを測定する方法 | |
US5313272A (en) | Method and apparatus for measuring deviation between patterns on a semiconductor wafer | |
KR20140050562A (ko) | 검출 디바이스, 노광 장치, 그리고 상기 검출 디바이스 및 노광 장치를 이용한 디바이스 제조 방법 | |
US6141108A (en) | Position control method in exposure apparatus | |
CN110244519A (zh) | 图案形成装置、基板保持装置和物品制造方法 | |
JP2005172686A (ja) | 両面加工位置計測装置及びその方法 | |
JP2000299276A (ja) | 露光装置 | |
JPH09312248A (ja) | 露光装置 | |
JP2713552B2 (ja) | 露光装置 | |
JPH0352207B2 (ja) | ||
JP3735849B2 (ja) | 露光装置 | |
CN217034507U (zh) | 光学对准系统 | |
JPS63221616A (ja) | マスク・ウエハの位置合わせ方法 | |
JPS5974625A (ja) | 投影型露光装置 | |
JPH09266149A (ja) | 投影露光方法及び面位置検出方法 | |
JP3604801B2 (ja) | 露光装置および露光方法 | |
JP2003133224A (ja) | 表面位置設定方法、表面位置設定装置及び露光装置 | |
JPH06302500A (ja) | 投影露光装置及びそれを用いた半導体素子の製造方法 | |
JPH11251232A (ja) | 基板および露光装置および素子製造方法 | |
JPH1140491A (ja) | 合焦点位置検出方法 | |
JP2002139847A (ja) | 露光装置、露光方法及びデバイス製造方法 | |
JPH0954443A (ja) | 露光方法及び装置 | |
KR20050018186A (ko) | 반도체 웨이퍼 패턴의 크기 및 오버레이 측정장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20031203 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: ULTRATECH, INC. |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20070130 |
|
17Q | First examination report despatched |
Effective date: 20070330 |
|
RTI1 | Title (correction) |
Free format text: SUBSTRATE ALIGNMENT SYSTEM AND CORRESPONDING METHOD |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20080318 |