EP1350588A3 - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung Download PDF

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Publication number
EP1350588A3
EP1350588A3 EP03251732A EP03251732A EP1350588A3 EP 1350588 A3 EP1350588 A3 EP 1350588A3 EP 03251732 A EP03251732 A EP 03251732A EP 03251732 A EP03251732 A EP 03251732A EP 1350588 A3 EP1350588 A3 EP 1350588A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
manufacturing semiconductor
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03251732A
Other languages
English (en)
French (fr)
Other versions
EP1350588A2 (de
EP1350588B1 (de
Inventor
Akira Morozumi
Katsumi Yamada
Tadashi Miyasaka
Eiji Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of EP1350588A2 publication Critical patent/EP1350588A2/de
Publication of EP1350588A3 publication Critical patent/EP1350588A3/de
Application granted granted Critical
Publication of EP1350588B1 publication Critical patent/EP1350588B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/008—Soldering within a furnace
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/206—Cleaning
    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83815—Reflow soldering
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/0105—Tin [Sn]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
EP03251732A 2002-03-29 2003-03-20 Verfahren zur Herstellung einer Halbleitervorrichtung Expired - Lifetime EP1350588B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002094650A JP3809806B2 (ja) 2002-03-29 2002-03-29 半導体装置の製造方法
JP2002094650 2002-03-29

Publications (3)

Publication Number Publication Date
EP1350588A2 EP1350588A2 (de) 2003-10-08
EP1350588A3 true EP1350588A3 (de) 2004-09-22
EP1350588B1 EP1350588B1 (de) 2006-08-02

Family

ID=28035863

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03251732A Expired - Lifetime EP1350588B1 (de) 2002-03-29 2003-03-20 Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US6905063B2 (de)
EP (1) EP1350588B1 (de)
JP (1) JP3809806B2 (de)
CN (1) CN1266753C (de)
DE (1) DE60307157T2 (de)

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JP2005205418A (ja) * 2004-01-20 2005-08-04 Denso Corp 接合構造体の製造方法
US7347354B2 (en) * 2004-03-23 2008-03-25 Intel Corporation Metallic solder thermal interface material layer and application of the same
JP2007000915A (ja) * 2005-06-27 2007-01-11 Shinko Seiki Co Ltd 半田付け方法及び半田付け装置
JP2007180447A (ja) * 2005-12-28 2007-07-12 Toyota Industries Corp 半田付け方法、半田付け装置、及び半導体装置の製造方法
JP2007207899A (ja) * 2006-01-31 2007-08-16 Toyota Industries Corp 半田付け装置、半田付け方法、及び半導体装置の製造方法
JP4924920B2 (ja) * 2006-06-28 2012-04-25 三菱マテリアル株式会社 Ａｕ−Ｓｎ合金はんだペーストを用いて素子の接合面全面を基板に接合する方法
DE102007005345B4 (de) * 2007-02-02 2014-06-18 Seho Systemtechnik Gmbh Verfahren zum Reflow-Löten sowie Vorrichtung zur Durchführung des Verfahrens
DE102007010882B4 (de) * 2007-03-06 2009-01-29 Infineon Technologies Ag Verfahren zur Herstellung einer Lötverbindung zwischen einem Halbleiterchip und einem Substrat
KR20090005488A (ko) * 2007-07-09 2009-01-14 삼성전자주식회사 리플로우 장치 및 방법
KR20100048615A (ko) * 2008-10-31 2010-05-11 엘지디스플레이 주식회사 표시장치의 제조장치
JP5343566B2 (ja) * 2009-01-08 2013-11-13 富士通株式会社 接合方法及びリフロー装置
JP5424201B2 (ja) * 2009-08-27 2014-02-26 アユミ工業株式会社 加熱溶融処理装置および加熱溶融処理方法
JP2012074636A (ja) * 2010-09-29 2012-04-12 Sumitomo Bakelite Co Ltd 接合方法、半導体装置、多層回路基板および電子部品
TW201301412A (zh) * 2011-06-20 2013-01-01 Walsin Lihwa Corp 晶片結合方法
TW201301413A (zh) * 2011-06-20 2013-01-01 Walsin Lihwa Corp 晶片結合設備
DE202011107022U1 (de) * 2011-10-21 2012-04-05 Asscon Systemtechnik-Elektronik Gmbh Vorrichtung zum Löten
DE102012104707A1 (de) * 2012-05-31 2013-12-05 Benteler Automobiltechnik Gmbh Verfahren zum Herstellen eines Abgaswärmetauschers
JP6116165B2 (ja) * 2012-09-14 2017-04-19 昭和電工株式会社 アルミニウムのろう付法
JP5902107B2 (ja) * 2013-01-24 2016-04-13 オリジン電気株式会社 加熱接合装置及び加熱接合製品の製造方法
JP6144495B2 (ja) * 2013-01-24 2017-06-07 オリジン電気株式会社 加熱接合装置及び加熱接合製品の製造方法
JP2014157858A (ja) * 2013-02-14 2014-08-28 Fuji Electric Co Ltd 半導体装置の製造方法
KR102217782B1 (ko) * 2013-05-10 2021-02-18 후지 덴키 가부시키가이샤 반도체 장치 및 반도체 장치의 제조방법
JP2015009262A (ja) * 2013-07-01 2015-01-19 三菱電機株式会社 リフロー装置
JP6278251B2 (ja) * 2013-09-27 2018-02-14 富士電機株式会社 接合組立装置
JP6365919B2 (ja) * 2013-09-27 2018-08-01 富士電機株式会社 半導体装置の製造方法
WO2015097796A1 (ja) * 2013-12-25 2015-07-02 千住金属工業株式会社 真空はんだ処理装置及びその制御方法
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US6905063B2 (en) 2005-06-14
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