EP1214864B1 - Silicon-based sensor system - Google Patents

Silicon-based sensor system Download PDF

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Publication number
EP1214864B1
EP1214864B1 EP00958265A EP00958265A EP1214864B1 EP 1214864 B1 EP1214864 B1 EP 1214864B1 EP 00958265 A EP00958265 A EP 00958265A EP 00958265 A EP00958265 A EP 00958265A EP 1214864 B1 EP1214864 B1 EP 1214864B1
Authority
EP
European Patent Office
Prior art keywords
sensor system
transducer element
carrier member
contact
transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP00958265A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1214864A2 (en
Inventor
Matthias Müllenborn
Jochen F. Kuhmann
Peter U. Scheel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pulse Mems ApS
Original Assignee
SonionMems AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/570,434 external-priority patent/US6522762B1/en
Application filed by SonionMems AS filed Critical SonionMems AS
Publication of EP1214864A2 publication Critical patent/EP1214864A2/en
Application granted granted Critical
Publication of EP1214864B1 publication Critical patent/EP1214864B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception
    • H04R25/60—Mounting or interconnection of hearing aid parts, e.g. inside tips, housings or to ossicles
    • H04R25/609—Mounting or interconnection of hearing aid parts, e.g. inside tips, housings or to ossicles of circuitry

Definitions

  • the present invention relates to a sensor system comprising a carrier member, a transducer element and an electronic device.
  • the present invention relates in particular to condenser microphone systems assembled using flip-chip technology.
  • the present invention further relates to condenser microphone systems adapted for surface mounting on e.g. printed circuit boards (PCB's).
  • PCB's printed circuit boards
  • EP 561 566 discloses a solid state condenser microphone having a field effect transistor (FET) circuitry and a cavity or sound inlet on the same chip.
  • FET field effect transistor
  • the techniques and processes for manufacturing a FET circuitry are quite different from the techniques and processes used in manufacturing transducer elements. Consequently, the transducer element and FET system disclosed in EP 561 566 requires two (or possibly more) separate stages of production which by nature makes the manufacturing more complicated and thereby also more costly.
  • MEMS microelectromechanical systems
  • US 5,889,872 discloses a hybrid system consisting of a silicon microphone and an integrated circuit chip mounted onto it using wire bonding for the electrical connection. This solution has the disadvantage of requiring additional protection and space for the bonding wires.
  • US 5,856,914 discloses a flip-chip mounted micromechanical device, such as a condenser microphone, where part of the carrier upon which the microdevice is mounted, forms part of the final system.
  • a disadvantage of this system is the fact that the micromechanical device may not be tested prior to the mounting on the carrier.
  • Another disadvantage of the disclosed system relates to the chosen materials.
  • the micromechanical device is comprised of Si whereas the carrier is made of a PCB or a ceramic material. Differences in thermal expansion coefficients may easily complicate the integration of such different materials.
  • the article discloses a three-layer microphone system where a transducer element is flip-chip mounted on an intermediate layer connecting the transducer element to an electronic device, such as an application specific integrated circuit (ASIC).
  • the transducer element comprises a movable diaphragm and a substantially stiff back plate.
  • On the opposite side of the transducer element a silicon-based structure forming a back chamber is mounted. It is worth noting that in order for the microphone system to be electrically connected to the surroundings wire bonding or direct soldering is required.
  • a sensor system comprising
  • the transducer element may in principle be any kind of transducer, such as a pressure transducer, an accelerometer or a thermometer.
  • the carrier member may further comprise a second surface, said second surface holding a plurality of contact elements. At least one of the contact elements of the first or second group is electrically connected to one of the contact elements being held by the second surface.
  • the first and second surfaces may be substantially parallel and opposite each other.
  • the carrier member and the transducer element may be based on a semiconductor material, such as Si.
  • the carrier member, the transducer element and the electronic device may be based on the same semiconductor material. Again, the material may be Si.
  • the carrier member may further comprise an indentation aligned with the active member of the transducer element.
  • the active member of the transducer element may comprise a capacitor being formed by a flexible diaphragm and a substantially stiff back plate in combination.
  • the transducer element further comprises a cavity or sound inlet. The bottom of the cavity may be defined or formed by the active member of the transducer element.
  • the flexible diaphragm and the substantially stiff back plate may be electrically connected to a first and a second contact element of the transducer element, respectively, in order to transfer the signal received by the transducer element to the carrier member.
  • the integrated circuit may be adapted for signal processing.
  • This integrated circuit may be an ASIC.
  • the senor may further comprise an opening or sound inlet between the second surface of the carrier member and the indentation.
  • an outer surface of the sensor is at least partly protected by a lid.
  • the lid and the active member of the transducer element may define an upper and lower boundary of the cavity, respectively.
  • at least one outer surface of the sensor system may hold a conductive layer.
  • the conductive layer may comprise a metal layer or a conductive polymer layer.
  • the contact elements may comprise solder materials, such as a Sn, SnAg, SnAu or SnPb.
  • the sensor system may comprise sealing means for hermetically sealing the transducer element.
  • the present invention relates to a sensor system comprising
  • the sensor according to the second aspect may be suitable for directional sensing, such as for directional sensitive pressure transducers.
  • the carrier member such as a Si-based carrier member, may further comprise a second surface holding a plurality of contact elements.
  • a second surface holding a plurality of contact elements.
  • at least one of the contact elements of the first, second or third group may be electrically connected to one of the contact elements being held by the second surface.
  • the first and second surfaces may be substantially parallel and opposite each other.
  • the transducer elements and the electronic device are Si-based.
  • the carrier member may further comprise a first and a second indentation, the first indentation being aligned with the active member of the first transducer element, the second indentation being aligned with the active member of the second transducer element.
  • the first and second indentations act as back chambers.
  • Each of the first and second transducer elements may further comprise a cavity, the bottom of said cavities being defined by the active members of the first and second transducer elements.
  • each of the active members of the first and second transducer elements may comprise a capacitor, said capacitor being formed by a flexible diaphragm and a substantially stiff back plate in combination.
  • the flexible diaphragm and the substantially stiff back plate may be electrically connected to the contact elements of the respective transducer elements.
  • Each of the first and second transducer elements further may comprise a lid for protecting the transducer elements.
  • the lids and the active members of the first and second transducer elements may be positioned in such a way that they define an upper and a lower boundary of the respective cavities.
  • At least part of an outer surface of the sensor system may hold a conductive layer.
  • This conductive layer may be a metal layer or a conductive polymer layer.
  • the contact elements may comprise a solder material, such as Sn, SnAg, SnAu or SnPb.
  • Solid state silicon-based condenser microphone systems are suitable for batch production.
  • the combination of the different elements forming the microphone system is more flexible compared to any other system disclosed in the prior art.
  • the present invention makes it possible to provide a very well defined interface to the environment, e.g. by an opening on one side of the system. This opening can be covered by a film or filter preventing dust, moisture and other impurities from contaminating or obstructing the characteristics of the microphone. Electrical connections between the different elements of the microphone system are established economically and reliably via a silicon carrier using flip-chip technology.
  • the present invention uses an integrated electronic circuit chip, preferably an ASIC which may be designed and manufactured separately and independent of the design and manufacture of the transducer element of the microphone. This is advantageous since the techniques and processes for manufacturing integrated electronic circuit chips are different from those used in manufacturing transducer elements, and each production stage can thus be optimised independently. Furthermore, testing of transducer elements and ASICs may be performed on wafer level.
  • the complete sensor system can be electrically connected to an external substrate by surface mount technology with the contacts facing one side of the system that is not in conflict with the above-mentioned interface to the environment. This allows the user to apply simple and efficient surface mount techniques for the assembly of the overall system.
  • the process used for manufacturing the different elements of the sensor system involves mainly known technologies within the field of microtechnology.
  • a silicon carrier substrate 2 containing one or more vertical etched feed-through holes 20 is shown.
  • the silicon carrier substrate 2 which is bulk crystalline silicon, has solder bumps 8, 22 on a first surface and a second surface, respectively.
  • the electrical signal is carried from the first surface to the second surface via feed-through lines 23.
  • one or more transducer elements 1 are flip-chip mounted onto the silicon carrier substrate 2, connected and fixed by a first group of solder bumps 8.
  • one or more electronic devices, such as integrated circuit chips 3 are flip-chip mounted onto the silicon carrier substrate 2, connected and fixed by a second group of solder bumps 8.
  • the solder bump 8 material is typically Sn, SnAg, SnAu, or SnPb, but other metals could also be used.
  • a solder sealing ring 9 provides sealing for the transducer element 1.
  • feed-through lines 23 are used for carrying the electrical signals from the transducer element 1 under the sealing ring 9 to the electronic device 3. This is shown in greater detail in Figure 5. The signal can also be carried to the electronic circuit by other conductive paths.
  • Electrical conductive paths 23 are also formed through the carrier e.g. by etching holes 20 and subsequent metallization. The etching can be done by wet chemical etching or dry plasma etching techniques. This path 23 is called a vertical feed-through and can be used for carrying the electrical signal from either the transducer 1 or the electronic circuit 3 to the second surface of the carrier.
  • the second surface is supplied with solder bumps 22 for surface mounting onto e.g. a PCB or another carrier.
  • FIG 2 shows a package like the one shown in Figure 1, but in this embodiment the electronic device 3 has been connected and fixed by one group of solder bumps 8 as well as other means such as underfill or glue 21. Furthermore, the package is protected by a lid 5, which is fixed to the flip-chip mounted transducer element 1 or electronic device 3 or both.
  • the lid 5 has an opening 4 providing a well-determined access to the environment, e.g. a sound-transmitting grid or filter as protection against particles or humidity for a microphone.
  • the lid can be made separately, e.g. from metal or polymer by punching or injection moulding, respectively.
  • the transducer element 1 is a microphone and a back chamber 11 has been etched into the silicon substrate 2.
  • the back chamber is etched into the silicon carrier by wet etching processes using reactants as KOH, TMAH or EDP or by dry etching processes such as reactive ion etching.
  • the cavity 11 can be etched in the same step as the feed-through hole 20.
  • the difference between Figure 3 and 4 is that the system, in Figure 4, has been encapsulated with a filter 5 for providing EMI-shielding.
  • the EMI-shield 16 is a conductive polymer layer, such as silver epoxy or a metal layer, such as electroplated or evaporated Cu or Au.
  • the integrated circuit chip 3 and the filter 5 in Figure 4 have been connected and fixed with additional means such as underfill or glue 21.
  • the function of the microphone is as follows.
  • the opening 4 functions as a sound inlet, and ambient sound pressure enters through the filter 5 covering the opening 4 to the cavity 10 functioning as a front chamber for the microphone.
  • the sound pressure deflects the diaphragm 12, which causes the air between the diaphragm 12 and the back plate 13 to escape through the perforations 19.
  • the diaphragm may be designed and manufactured in different ways.
  • the diaphragm may be designed as a three-layer structure having two outer layers comprising silicon nitride whereas the intermediate layer comprises polycrystalline silicon.
  • the polycrystalline silicon comprised in the intermediate layer is doped with either boron (B) or phosphorous (P).
  • the back plate also comprises B- or P-doped polycrystalline silicon and silicon nitride.
  • the cavity 11 functions as a back chamber for the microphone.
  • the circuit on the integrated circuit chip 3 is electrically connected to the diaphragm 12 and the back plate 13 through solder bumps 8.
  • the circuit is designed to detect variations in the electrical capacity of the capacitor formed by the diaphragm 12 and the back plate 13.
  • the circuit has electrical connections via the solder bumps 8 and the vertical feed-through lines 23 to the solder bumps 22 for electrically connecting it to a power supply and other electronic circuitry in e.g. a hearing instrument.
  • the back plate 13 When operating the capacitor formed by the diaphragm 12 and the back plate 13, the back plate 13 is connected to a DC power supply in order to charge the back plate 13.
  • a DC power supply When the capacitance varies due to distance variation between the diaphragm 12 and the back plate 13 in response to a varying sound pressure, an AC voltage is superimposed on top of the applied DC level. The amplitude of the AC voltage is a measured for the change in capacitance and thus also a measure for the sound pressure experienced by the diaphragm.
  • FIG 5 a close-up of a lateral feed-through line 24 and sealing ring 9 is shown.
  • the feed-through 24 is electrically insulated from the sealing ring 9 and the substrate 2 by insulating layers 25. Insulating layers 25 similarly insulate the solder bumps 8 of the transducer 1 from the substrate 2.
  • the solder bumps 8 of the transducer 1 and the solder bumps 8 of the circuit chip 3 are electrically connected via the feed-through line 24.
  • FIG 6 a microphone similar to the one in Figure 3 is shown. However, an opening 24 has been introduced in the backchamber 11. The opening 24 causes a membrane deflection that reflects the pressure gradient over the membrane resulting in a directional sensitivity of the microphone.
  • FIG 7 a microphone similar to the one in Figure 3 is shown. However, an additional transducer element has been added so that the microphone now uses two transducer elements 1, both containing a membrane 12 and a backplate 13. Both transducer elements are connected to the carrier member 3 by solder bumps 8 and seal ring 9 with an indentation 11 for each transducer element. The two transducer elements allow to measure the phase difference of an impinging acoustical wave resulting in a directional sensitivity of the microphone.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Air Bags (AREA)
  • Silicon Polymers (AREA)
EP00958265A 1999-09-06 2000-09-06 Silicon-based sensor system Expired - Lifetime EP1214864B1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DKPA199901254 1999-09-06
DK125499 1999-09-06
US39162899A 1999-09-07 1999-09-07
US391628 1999-09-07
US570434 2000-05-12
US09/570,434 US6522762B1 (en) 1999-09-07 2000-05-12 Silicon-based sensor system
PCT/DK2000/000491 WO2001019134A2 (en) 1999-09-06 2000-09-06 Silicon-based sensor system

Publications (2)

Publication Number Publication Date
EP1214864A2 EP1214864A2 (en) 2002-06-19
EP1214864B1 true EP1214864B1 (en) 2003-06-04

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP00958265A Expired - Lifetime EP1214864B1 (en) 1999-09-06 2000-09-06 Silicon-based sensor system

Country Status (10)

Country Link
EP (1) EP1214864B1 (ja)
JP (2) JP4459498B2 (ja)
CN (1) CN1203726C (ja)
AT (1) ATE242587T1 (ja)
AU (1) AU6984100A (ja)
CA (1) CA2383740C (ja)
DE (1) DE60003199T2 (ja)
DK (1) DK1214864T3 (ja)
PL (1) PL209935B1 (ja)
WO (1) WO2001019134A2 (ja)

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DE102004011203A1 (de) * 2004-03-04 2005-09-29 Robert Bosch Gmbh Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung
WO2012088688A1 (en) * 2010-12-30 2012-07-05 Goertek Inc. A mems microphone and method for packaging the same

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JP5844155B2 (ja) * 2008-10-14 2016-01-13 ノールズ エレクトロニクス，リミテッド ライアビリティ カンパニー 複数の変換器素子を含むマイクロフォン
JP2012527835A (ja) * 2009-05-18 2012-11-08 ノールズ エレクトロニクス，リミテッド ライアビリティ カンパニー 低振動感度を有するマイクロホン
KR101609270B1 (ko) 2009-08-12 2016-04-06 삼성전자주식회사 압전형 마이크로 스피커 및 그 제조 방법
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Cited By (5)

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Publication number Priority date Publication date Assignee Title
DE102004011203A1 (de) * 2004-03-04 2005-09-29 Robert Bosch Gmbh Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung
DE102004011203B4 (de) * 2004-03-04 2010-09-16 Robert Bosch Gmbh Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung
WO2012088688A1 (en) * 2010-12-30 2012-07-05 Goertek Inc. A mems microphone and method for packaging the same
CN102726065A (zh) * 2010-12-30 2012-10-10 歌尔声学股份有限公司 Mems麦克风及其封装方法
CN102726065B (zh) * 2010-12-30 2014-06-04 歌尔声学股份有限公司 Mems麦克风及其封装方法

Also Published As

Publication number Publication date
JP2007028671A (ja) 2007-02-01
WO2001019134A3 (en) 2001-09-07
DE60003199D1 (de) 2003-07-10
DK1214864T3 (da) 2003-08-25
EP1214864A2 (en) 2002-06-19
DE60003199T2 (de) 2004-07-01
CA2383740A1 (en) 2001-03-15
JP4303742B2 (ja) 2009-07-29
CA2383740C (en) 2005-04-05
CN1387741A (zh) 2002-12-25
AU6984100A (en) 2001-04-10
CN1203726C (zh) 2005-05-25
PL209935B1 (pl) 2011-11-30
WO2001019134A2 (en) 2001-03-15
JP4459498B2 (ja) 2010-04-28
JP2003508998A (ja) 2003-03-04
ATE242587T1 (de) 2003-06-15
PL354095A1 (en) 2003-12-29

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