EP1157402B1 - Elektronenemitter und verfahren zu dessen herstellung - Google Patents
Elektronenemitter und verfahren zu dessen herstellung Download PDFInfo
- Publication number
- EP1157402B1 EP1157402B1 EP00912394A EP00912394A EP1157402B1 EP 1157402 B1 EP1157402 B1 EP 1157402B1 EP 00912394 A EP00912394 A EP 00912394A EP 00912394 A EP00912394 A EP 00912394A EP 1157402 B1 EP1157402 B1 EP 1157402B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- insulating layer
- electron emitter
- ions
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
Definitions
- the invention relates to an electron emitter, comprising one in one Insulating layer arranged conductive and cylindrical substrate areas arranged perpendicular to the surface of this layer, and a Process for its production.
- the liquid of the Nanotube suspension obtained was by means of a ceramic filter removed, forming a film on the surface of the filter that is finally pressed against the PTFE film and remains there. Due to the manufacturing process, however, not all nanotubes are arranged perpendicular to the substrate, resulting in a non-homogeneous Emission leads to the instabilities of the electron-emissive layer pulls itself.
- EP 0 609 532 describes an electron emitter in which the Electron emitting layer is a hydrogenated layer of diamond or is diamond-like carbon material.
- This layer points specifically introduced electrical and / or electronic active defects.
- the Defects are spaced from the surface of the layer in the hydrated layer or as aligned filaments at an angle to the surface of the hydrogenated layer arranged from 45 ° to 90 °.
- defects For example, spaces, imperfections, interstitial spaces are specified.
- the Generation of such defects can occur during the growth of the layer but also carried out subsequently by ion implantation.
- the Binding structure changed in the crystal lattice, creating conductive defects become.
- a mechanical and electrical specify homogeneous and stable electron emitter, which in one on one Insulating layer arranged conductive and cylindrical substrate has areas arranged perpendicular to the surface of this layer, and a method for producing such an electron emitter.
- the task is performed by an electron emitter of the type mentioned at the beginning solved in that, according to the invention, the cylindrical conductive regions over the entire thickness of this layer in this straight and parallel aligned to each other are formed as homogeneously conductive channels.
- the insulating Layer a diamond-like carbon layer or a layer cubic boron nitride.
- the diamond-like carbon layer is preferably in which the homogeneously conductive channels are embedded, 100 nm thick.
- the inventive method for producing the described Electron emitter provides that first on a substrate insulating layer with a thickness between 40 nm and 1000 nm applied is then this layer perpendicular to its surface with high-energy heavy ions are irradiated homogeneously, the ions being a have such energy that a restructuring of the insulating Layer of sufficiently high energy deposition over the entire thickness of this Layer guaranteed, and the ions have a dose at which the middle Distance of the statistically impacting ions in the insulating layer is between 20 nm and 1000 nm.
- the method according to the invention allows the generation of Nanowires, i. H. of thin, electrically conductive channels (ion traces) in an insulating layer over the entire thickness of this layer.
- the ends act as thin tips, on which there is a electric field leads to a strong increase in the field strength.
- the generated nanowires are straight and parallel to each other and arranged perpendicular to the substrate, which is a good electrical homogeneity and slight deviations in the emission properties are guaranteed.
- the Stability of the generated with the aid of the method according to the invention Electron emitter is made by embedding the nanowires in a very stable insulating crystal structure guaranteed.
- the invention The method enables the generation of conductive channels approximately same diameter and structure, which in turn the uniform emission is supported.
- the method according to the invention is suitable, for example, stable, to produce large-area field emission cathodes for flat screens.
- Xe ions with an energy of 240 MeV and a dose of 5 ⁇ 10 10 particles / cm 2 are used as high-energy heavy ions.
- a diamond-like carbon layer is used as the insulating layer.
- the bombardment of the diamond-like carbon layer with high-energy heavy ions causes a rearrangement of the carbon atoms due to the local energy deposition along its track over the entire thickness of this layer.
- the insulating, diamond-like sp 3 bond is converted into the electrically conductive, graphite-like sp 2 bond.
- the ions themselves are only stopped in the substrate.
- a layer of cubic boron nitride is used, so when bombarded with heavy ions, the stoichiometry changes along the Ion trace, which is also the case for other composite materials, and ultimately changes the conductivity in that channel.
- the diamond-like carbon layer is Ion deposition applied to a doped silicon substrate. Farther it is provided that the diamond-like carbon layer is preferably in a thickness of 100 nm is applied.
- a 100 nm thick diamond-like carbon layer is applied to a 0.3 mm thick doped Si substrate by direct deposition of C ions in an energy interval from 50 eV to 400 eV at room temperature.
- the substrate should be at least partially suitable for the electrode feed or may already contain the control electronics.
- the diamond-like carbon layer is then bombarded with Xe ions, which have an energy of 240 MeV and a dose of 5 ⁇ 10 10 particles / cm 2 .
- the impacts of the Xe ions are statistical and are homogeneously distributed over the entire irradiated area.
- the desired size of the irradiated area can be achieved by an appropriately selected cross section of the ion beam and / or by scanning the area to be irradiated.
- the energy of the ions was selected so that the energy loss can be realized over the entire thickness of the diamond-like carbon layer.
- the Xe ions deposit about 20 keV / nm, as a result of which the carbon atoms in the ion track are rearranged and the insulating, diamond-like sp 3 bond is converted into the electrically conductive, graphite-like sp 2 bond. This creates conductive nanowires in the insulating diamond-like carbon layer, which are oriented perpendicular to the surface of the diamond-like carbon matrix surrounding them.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims (11)
- Elektronenemitter, aufweisend in einer auf einem Substrat angeordneten isolierenden Schicht leitende zylinderförmige und senkrecht zur Oberfläche dieser Schicht angeordnete Bereiche,
dadurch gekennzeichnet, daß
die zylinderförmigen leitenden Bereiche über die gesamte Dicke dieser Schicht in dieser gerade geformt und parallel zueinander ausgerichtet als homogen leitende Kanäle ausgebildet sind. - Elektronenemitter nach Anspruch 1,
dadurch gekennzeichnet, daß
die isolierende Schicht, in die die homogen leitenden Kanäle eingebettet sind, eine diamantartige Kohlenstoff-Schicht ist. - Elektronenemitter nach Anspruch 2,
dadurch gekennzeichnet, daß
die Dicke der diamantartigen Kohlenstoff-Schicht 100 nm beträgt. - Elektronenemitter nach Anspruch 1,
dadurch gekennzeichnet, daß
die isolierende Schicht, in die die homogen leitenden Kanäle eingebettet sind, eine Schicht aus kubischem Bomitrid (BN) ist. - Elektronenemitter nach Anspruch 1,
dadurch gekennzeichnet, daß
das Substrat aus Silizium gebildet ist. - Verfahren zur Herstellung eines Elektronenemitters gemäß Anspruch 1,
dadurch gekennzeichnet, daß
zunächst auf einem Substrat eine isolierende Schicht mit einer Dicke zwischen 40 nm und 1000 nm aufgebracht wird,
anschließend diese Schicht senkrecht zu ihrer Oberfläche mit energiereichen schweren Ionen homogen bestrahlt wird, wobei die Ionen eine solche Energie aufweisen, die eine für eine Umstrukturierung der isolierenden Schicht hinreichend hohe Energiedeposition über die gesamte Dicke dieser Schicht gewährleistet, und die Ionen eine Dosis aufweisen, bei der der mittlere Abstand der statistisch in die isolierende Schicht einschlagenden Ionen zwischen 20 nm und 1000 nm liegt. - Verfahren nach Anspruch 6,
dadurch gekennzeichnet, daß
als energiereiche schwere Ionen Xe-Ionen mit einer Energie von 240 MeV und einer Dosis von 5 x 1010 Teilchen/cm2 verwendet werden. - Verfahren nach Anspruch 6,
dadurch gekennzeichnet, daß
als Material für die isolierende Schicht diamantartiger Kohlenstoff verwendet wird. - Verfahren nach Anspruch 6,
dadurch gekennzeichnet, daß
als Material für die isolierende Schicht kubisches Bomitrid verwendet wird. - Verfahren nach Anspruch 8,
dadurch gekennzeichnet, daß
die diamantartige Kohlenstoff-Schicht mittels lonendeposition auf einem dotierten Silizium-Substrat aufgebracht wird. - Verfahren nach Anspruch 8,
dadurch gekennzeichnet, daß
die diamantartige Kohlenstoff-Schicht in einer Dicke von 100 nm aufgebracht wird.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19910156 | 1999-02-26 | ||
DE19910156A DE19910156C2 (de) | 1999-02-26 | 1999-02-26 | Elektronenemitter und Verfahren zu dessen Herstellung |
PCT/DE2000/000570 WO2000052725A1 (de) | 1999-02-26 | 2000-02-25 | Elektronenemitter und verfahren zu dessen herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1157402A1 EP1157402A1 (de) | 2001-11-28 |
EP1157402B1 true EP1157402B1 (de) | 2004-05-06 |
Family
ID=7900127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00912394A Expired - Lifetime EP1157402B1 (de) | 1999-02-26 | 2000-02-25 | Elektronenemitter und verfahren zu dessen herstellung |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1157402B1 (de) |
JP (1) | JP2002538594A (de) |
KR (1) | KR100588738B1 (de) |
DE (2) | DE19910156C2 (de) |
HK (1) | HK1044071B (de) |
WO (1) | WO2000052725A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2803944B1 (fr) * | 2000-01-14 | 2002-06-14 | Thomson Tubes Electroniques | Cathode generatrice d'electrons et son procede de fabrication |
CN1229836C (zh) | 2000-02-16 | 2005-11-30 | 富勒林国际公司 | 用于有效电子场致发射的金刚石/碳纳米管结构 |
DE10306076B4 (de) * | 2003-02-08 | 2005-02-17 | Hahn-Meitner-Institut Berlin Gmbh | Quantenpunkt aus elektrisch leitendem Kohlenstoff, Verfahren zur Herstellung und Anwendung |
DE102004011363A1 (de) * | 2004-03-05 | 2005-09-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Element mit strukturierter Oberfläche sowie Verfahren zu seiner Herstellung |
JP6684488B2 (ja) * | 2016-09-30 | 2020-04-22 | 株式会社長町サイエンスラボ | 導電性dlc膜の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5089742A (en) * | 1990-09-28 | 1992-02-18 | The United States Of America As Represented By The Secretary Of The Navy | Electron beam source formed with biologically derived tubule materials |
US5619092A (en) * | 1993-02-01 | 1997-04-08 | Motorola | Enhanced electron emitter |
FR2705830B1 (fr) * | 1993-05-27 | 1995-06-30 | Commissariat Energie Atomique | Procédé de fabrication de dispositifs d'affichage à micropointes, utilisant la lithographie par ions lourds. |
US5462467A (en) * | 1993-09-08 | 1995-10-31 | Silicon Video Corporation | Fabrication of filamentary field-emission device, including self-aligned gate |
JP2873930B2 (ja) * | 1996-02-13 | 1999-03-24 | 工業技術院長 | カーボンナノチューブを有する炭素質固体構造体、炭素質固体構造体からなる電子線源素子用電子放出体、及び炭素質固体構造体の製造方法 |
US5857882A (en) * | 1996-02-27 | 1999-01-12 | Sandia Corporation | Processing of materials for uniform field emission |
US5726524A (en) * | 1996-05-31 | 1998-03-10 | Minnesota Mining And Manufacturing Company | Field emission device having nanostructured emitters |
DE69834673T2 (de) * | 1997-09-30 | 2006-10-26 | Noritake Co., Ltd., Nagoya | Verfahren zur Herstellung einer Elektronenemittierenden Quelle |
-
1999
- 1999-02-26 DE DE19910156A patent/DE19910156C2/de not_active Expired - Fee Related
-
2000
- 2000-02-25 DE DE50006333T patent/DE50006333D1/de not_active Expired - Fee Related
- 2000-02-25 JP JP2000603064A patent/JP2002538594A/ja active Pending
- 2000-02-25 WO PCT/DE2000/000570 patent/WO2000052725A1/de active IP Right Grant
- 2000-02-25 KR KR1020017010531A patent/KR100588738B1/ko not_active IP Right Cessation
- 2000-02-25 EP EP00912394A patent/EP1157402B1/de not_active Expired - Lifetime
-
2002
- 2002-05-28 HK HK02103984.0A patent/HK1044071B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1157402A1 (de) | 2001-11-28 |
DE50006333D1 (de) | 2004-06-09 |
JP2002538594A (ja) | 2002-11-12 |
HK1044071A1 (en) | 2002-10-04 |
KR100588738B1 (ko) | 2006-06-12 |
DE19910156C2 (de) | 2002-07-18 |
HK1044071B (zh) | 2005-02-04 |
DE19910156A1 (de) | 2000-09-07 |
KR20010102258A (ko) | 2001-11-15 |
WO2000052725A1 (de) | 2000-09-08 |
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