EP0536362B1 - Solution d'attaque - Google Patents

Solution d'attaque Download PDF

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Publication number
EP0536362B1
EP0536362B1 EP92908839A EP92908839A EP0536362B1 EP 0536362 B1 EP0536362 B1 EP 0536362B1 EP 92908839 A EP92908839 A EP 92908839A EP 92908839 A EP92908839 A EP 92908839A EP 0536362 B1 EP0536362 B1 EP 0536362B1
Authority
EP
European Patent Office
Prior art keywords
hydrogen
etching
etching solution
metal
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP92908839A
Other languages
German (de)
English (en)
Other versions
EP0536362A1 (fr
Inventor
Walter Dr. Stark
Robert Dr. Ruprecht
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Karlsruhe GmbH
Original Assignee
Forschungszentrum Karlsruhe GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of EP0536362A1 publication Critical patent/EP0536362A1/fr
Application granted granted Critical
Publication of EP0536362B1 publication Critical patent/EP0536362B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/36—Alkaline compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition

Definitions

  • the invention relates to an etching solution according to the preamble of the first claim, a method for etching a layer of a metal from a substrate according to the preamble of the eighth claim and the use of a water-soluble, easily hydrogenated organic nitro compound as an additive to an aqueous solution of an acid or a strongly basic metal hydroxide to prevent the release of hydrogen gas when dissolving metal in the solution.
  • etching solution and a method of this type are known from DE 32 48 006 A1.
  • One subject of this document is a means for the selective removal of hard surface metal coatings, in particular ceramics, cermet and mixtures based on nickel, from high-strength, high-temperature-resistant substrates, which is characterized by approximately 90 to 450 g / l H 2 SO 4 , approximately 20 to 240 g / l a water-soluble, nitro-substituted aromatic compound, the rest water.
  • Another subject of this document is a method for removing hard surface metal coatings using this agent.
  • the water-soluble, nitro-substituted aromatic compound preferably consists of m-nitrobenzene sodium sulfonate or sulfonic acid or the corresponding alkali metal or alkaline earth metal nitrobenzenesulfonates; however, the other organic nitro compounds which are mentioned in US Pat. No. 2,698,781 to be discussed below can also be used.
  • the etching solution can also contain hydrofluoric acid, fluoroboric acid HBF 4 and surfactants as wetting agents.
  • the publication does not specify the manner in which the etching solution described works.
  • the nitroaromatic compound is only referred to as an oxidizing agent.
  • etching solution of the type mentioned at the outset is known from the already mentioned US Pat. No. 2,698,781.
  • this etching solution consists of an acid and a nitro-substituted aromatic compound, the potential of which, under special conditions specified in the publication, is between -0.50 volts and -0.90 volts.
  • the nitro-substituted aromatic compound is not used or is used only to a small extent during the etching process; it acts as an activator or catalyst for the etching reaction.
  • hydrogen must form during the etching process.
  • nitro-substituted aromatic compound Due to the condition that the potential of the nitro-substituted aromatic compound should be in the specified range, compounds are obviously selected from this class of compounds which do not form a reaction product with the metal or with the hydrogen formed after the etching process.
  • One of the nitro-substituted aromatic compounds which has such a potential is m-nitrobenzenesulfonic acid, which is particularly preferred in DE 32 48 006 A1 mentioned above.
  • EP-A-0 413 261 and WO-A-87/07 917 relate to a method for removing a tin or tin / lead layer from the surface of a copper substrate, two etching solutions being used in succession.
  • the first etching solution contains an acid and an aromatic nitro compound, preferably nitrobenzenesulfonate.
  • the second etching solution consists of an inorganic acid and a strong oxidizing agent.
  • EP-A-0 161 378 describes a method for the chemical removal of aluminum diffusion layers on workpieces, e.g. B. turbine blades, by treating them with nitrobenzenesulfonic acid, sodium cyanide and sodium hydroxide-containing aqueous solution.
  • CH 394 761 relates to a mixture for the selective dissolution of a metal in the presence of a second metal onto which the first metal is deposited, which is characterized in that it contains an organic nitro compound and an ammonium compound free of nitro groups, the mixture being liquid and contains at least 0.01% by weight of the organic nitro compound and the ammonium compound together and wherein the mixture has a pH of 7-11, and a method for producing the mixture and its use for removing a galvanic metal coating from it plated metal object.
  • organic nitro compound aromatic nitro compounds such as. B. the already mentioned nitrobenzenesulfonic acid, but also nitroaliphatic compounds such as nitromethane or nitroethane.
  • the mixture is basic, it cannot in any case contain a strong base such as alkali hydroxide; this is understandable because strong bases would release ammonia from the ammonium compounds. Furthermore, the concentration of hydroxyl ions should be relatively low.
  • DE 26 35 295 C2 discloses an etching solution for metals consisting of a nitro-substituted organic compound, a phosphoric acid derivative, an organic polyamine and an addition of an acid or base to adjust a pH between 6 and 14.
  • the metals are attacked by the nitro compound;
  • the released metal ions are complexed by the phosphorus oxygen derivatives.
  • aqueous hydrofluoric acid solution is known as an etching solution.
  • the publication relates to methods for producing microstructures with large structural heights, in which a sacrificial layer is selectively etched away, so that self-supporting structures which only partially adhere to a substrate are formed. These structures can be used as an acceleration sensor.
  • the aqueous solution of hydrofluoric acid is used as the etching solution. With this etching solution, a titanium layer can be selectively etched away from a nickel, copper or gold layer.
  • etching solutions are frequently used in microstructure technology in order to selectively etch thin metal layers compared to other metals.
  • the object of the invention is to propose etching solutions and methods for etching of the type mentioned at the outset which contain an acid or strong base which attacks the metal and dissolves to form the corresponding metal ions, but in which hydrogen evolution is prevented or at least greatly reduced and which therefore also in microstructure technology can be used.
  • the selective action of the attacking agent in the etching solution should not be impaired here.
  • the invention solves the underlying problem in such a way that the etching solution contains such a nitro-substituted organic compound, the nitro group of which is easily nascent Hydrogen reacts and can therefore be easily hydrogenated, special concentration conditions preferably being maintained.
  • the attacking agent in the etching solution according to the invention is usually an acid or an aqueous solution of the acid. Since the substrate from which a metal layer is to be etched off is often also made of metal, an acid is chosen which dissolves the metal layer but not the substrate. In microstructure technology, a dilute aqueous hydrofluoric acid solution is often used as the acid with which, for. B. titanium metal can be etched selectively over nickel. In principle, many other inorganic or organic acids can also be used as attacking agents, such as. As hydrochloric acid, sulfuric acid, formic acid, acetic acid, etc. If a metal layer is to be selectively etched away, one chooses such an acid which, although it rapidly dissolves the metal layer, does not attack the substrate or at least significantly more slowly. The action of pure acids on the metal layer produces hydrogen.
  • the invention is not limited to acids as an attacking agent.
  • Some metals such as B. Aluminum are also by strongly basic metal hydroxides such. B. sodium hydroxide solution or potassium hydroxide solution or their aqueous solutions. This opens up another possibility of selectively etching off a metal layer from another metal. Hydrogen is also produced when metal is etched off with the pure base.
  • Protic organic compounds such as alcohols, are further hydrogen-containing compounds which dissolve metals per se with the development of hydrogen.
  • Nitro-substituted organic compounds that react rapidly with nascent hydrogen according to reaction equation 1 are referred to as easily hydrogenable compounds.
  • the reaction equation (1) shows that at least 1/3 mol of an easily hydrogenable, monosubstituted nitro compound must be present in the etching solution in order to be able to trap one mol of hydrogen.
  • two or more nitro-substituted organic compounds can also be used in the same way. If the nitro group contains two (in the general case: x) nitro groups, only 1/6 mol (corresponding to 1/3 ⁇ x mol) of the nitro compound is required in order to trap all the hydrogen which is formed in the reaction.
  • at least 1/3 nitro group equivalent should be present in the etching solution per mole of the hydrogen formed when metal is dissolved.
  • preliminary tests can be used to determine in a simple manner which organic nitro compounds are easily hydrogenable, because it only has to be determined whether they are in are able to trap the hydrogen that forms when metal is exposed to an acid or a strongly basic hydroxide.
  • Such easily hydrogenatable organic nitro compounds can also be used in combination with other acids or hydroxides.
  • nitro compounds are, for example, short-chain nitroaliphatics, in particular nitromethane, which is particularly preferred because of its high solubility in water, but also nitroethane or nitropropane.
  • nitrophthalic acids such as 4-nitrophthalic acid, and picric acid are particularly suitable.
  • solubility of the organic nitro compound in water turns out to be too low, a solubilizer, for example a short-chain alcohol such as methanol, can be added to the etching solution according to the invention.
  • a solubilizer for example a short-chain alcohol such as methanol
  • the amount of hydrogen that would be released depends on the charge of the resulting metal ions. Only the minimum quantities can be seen from the stoichiometric equations. In practice it is necessary to work with an excess of acid (or base) as well as nitro compound so that the etching rate does not change significantly even towards the end of the etching process. For the oxidation of the hydrogen, which occurs in different stoichiometric amounts during the etching process, depending on the valency of the metal to be etched, at least the molar amounts of nitro compound corresponding to the reaction equations must be present, so that hydrogen gas evolution is prevented. However, it is advisable to use at least two to three times the stoichiometric amount of nitro compound to work so that the nitro compound is always present in a stoichiometric excess.
  • the amine compound When the hydrogen is oxidized by the nitro compound, the amine compound is formed in the acidic etching medium, which is then present as an ammonium salt through salt formation with the acid.
  • aliphatic nitro compounds are preferred as easily hydrogenable nitro compounds.
  • hydrofluoric acid should be used in a maximum concentration of 10% by weight. At higher concentrations, the evolution of hydrogen cannot be completely suppressed.
  • Aromatic nitro compounds are preferred for alkaline etching solutions, because in alkaline etching solutions nitroaliphatics with alpha-H atom can form salts due to the CH - acidic properties and thus cause side reactions. These side reactions can be ruled out due to the lack of CH - acidic hydrogen, for example in the case of nitrophthalic acids. Nevertheless, side reactions are to be expected in the alkaline range because of the high stability of individual intermediates up to the amine as end product, so that the reaction does not necessarily have to proceed to the amine. Rather, azooxyaromatics, azoaromatics or hydrazoaromatics can also arise. Since less hydrogen is bound here, an even greater excess of aromatic nitro compound should preferably be used in alkaline etching solutions.
  • the positive properties of the etching solution according to the invention can be further improved if a wetting agent is also added.
  • the addition of the wetting agent reduces the surface tension of the etching solution compared to the metal to be etched. This is particularly advantageous when very fine structures are to be etched free.
  • the addition of a wetting agent causes the gas bubbles to be smaller, adhere less well to the surface and therefore more easily be removed from the solution.
  • Suitable wetting agents are, for example, polyethylene glycol or lauryl sulfate.
  • the advantage of the invention is that the hydrogen formation during the etching can be prevented by simple means or at least greatly reduced. For this reason, the etching process proceeds more gently, so that substrates provided with sensitive microstructures can also be etched without destruction or deformation occurring. The etching process remains observable during the entire etching time, so that the etching process remains optically controllable - if necessary also under the microscope - and can be interrupted if necessary. Furthermore, the method according to the invention is advantageous for safety reasons, since the release of hydrogen is avoided. Another advantage of the etching solution according to the invention is that the metal layers to be etched cannot be covered with gas bubbles, so that the etching process takes place more uniformly and more quickly. The formation of pitting is avoided.
  • the commonly used metal attacking agent (acid or strong base) can still be used; it is only necessary to add the easily hydrogenable organic nitro compound.
  • the well-known, selective acting dissolving properties of the agent are retained.
  • the surfaces etched away according to the invention are smoother and glossier than without added nitro compound.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Claims (8)

  1. Solution d'attaque destinée à enlever par corrosion d'un substrat une couche d'un métal, solution qui contient :
    - un composé contenant de l'hydrogène, qui dissout le métal en soi avec dégagement d'hydrogène et
    - un composé organique nitrosubstitué, caractérisé en ce que
    - comme composé organique nitrosubstitué on choisit un composé, dont le groupe nitro est facilement hydrolysable par de l'hydrogène naissant et
    - le composé organique nitrosubstitué est contenu en une quantité qui correspond au moins au 1/3 de l'équivalent du groupe nitro par mol de l'hydrogène prenant naissance lors de la dissolution du métal en soi.
  2. Solution d'attaque selon la revendication 1,
    caractérisée en ce que
    le composé contenant de l'hydrogène représente un acide.
  3. Solution d'attaque selon la revendication 2,
    caractérisée en ce que
    le composé organique nitrosubstitué représente un composé nitroaliphatique.
  4. Solution d'attaque selon les revendications 2 ou 3,
    caractérisée en ce que
    l'acide est présent en une concentration de moins de 5 normale.
  5. Solution d'attaque selon la revendication 1,
    caractérisée en ce que
    le composé contenant de l'hydrogène représente un hydroxyde métallique fortement basique.
  6. Solution d'attaque selon la revendication 5,
    caractérisée en ce que le composé organique nitrosubstitué représente un composé nitro aromatique.
  7. Procédé pour enlever par corrosion d'un substrat une couche d'un métal, dans lequel :
    - le substrat recouvert du métal est immergé dans une solution d'attaque, qui contient :
    - un composé contenant de l'hydrogène, qui dissout le métal en soi avec dégagement d'hydrogène et
    - un composé organique nitrosubstitué,
    caractérisé en ce que
    on met en oeuvre une solution d'attaque conformément à l'une des revendications 1 à 6.
  8. Utilisation d'un nitrocomposé organique soluble dans l'eau, facilement hydrogénable par de l'hydrogène naissant comme additif à une solution aqueuse d'un acide ou d'un hydroxyde métallique fortement basique pour empêcher le dégagement de gaz hydrogène lors de la dissolution de métal dans la solution.
EP92908839A 1991-04-24 1992-04-21 Solution d'attaque Expired - Lifetime EP0536362B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4113283 1991-04-24
DE4113283A DE4113283C2 (de) 1991-04-24 1991-04-24 Verwendung einer Ätzlösung zum selektiven Abätzen einer metallischen Opferschicht bei der Herstellung von Mikrostrukturen
PCT/DE1992/000321 WO1992019792A1 (fr) 1991-04-24 1992-04-21 Solution d'attaque

Publications (2)

Publication Number Publication Date
EP0536362A1 EP0536362A1 (fr) 1993-04-14
EP0536362B1 true EP0536362B1 (fr) 1996-07-03

Family

ID=6430205

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92908839A Expired - Lifetime EP0536362B1 (fr) 1991-04-24 1992-04-21 Solution d'attaque

Country Status (6)

Country Link
US (1) US5462640A (fr)
EP (1) EP0536362B1 (fr)
JP (1) JPH06500363A (fr)
AT (1) ATE140041T1 (fr)
DE (2) DE4113283C2 (fr)
WO (1) WO1992019792A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100661945B1 (ko) * 1999-06-14 2006-12-28 후-쿠 후앙 광 입사에 의해 활성화되는 에너지 레벨 전이에 기초하는 전자기파 방사 장치 및 방법
DE10313887A1 (de) * 2003-03-27 2004-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum selektiven Gewinnen von Gold aus goldhaltigen Materialien
WO2008098593A1 (fr) * 2007-02-15 2008-08-21 Basf Se Composition d'un décapant du titane
CN114350366B (zh) * 2021-12-09 2023-04-18 湖北兴福电子材料股份有限公司 一种氮化硅与p型多晶硅等速蚀刻液

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US2698781A (en) * 1953-04-27 1955-01-04 Enthone Accelerating action of acids on metals
US3163524A (en) * 1957-09-27 1964-12-29 Eltex Chemical Corp Selective stripping of electroplated metals
US3666580A (en) * 1969-03-20 1972-05-30 Armco Steel Corp Chemical milling method and bath
US3677949A (en) * 1970-09-04 1972-07-18 Enthone Selectively stripping tin and/or lead from copper substrates
US4004956A (en) * 1974-08-14 1977-01-25 Enthone, Incorporated Selectively stripping tin or tin-lead alloys from copper substrates
US4042451A (en) * 1975-08-05 1977-08-16 M&T Chemicals Inc. Selected stripping of nickel-iron alloys from ferrous substrates
JPS5610396A (en) * 1979-07-07 1981-02-02 Nobuo Miyazawa Additive for acid bath for descaling of stainless steel
CA1185152A (fr) * 1982-01-22 1985-04-09 Thomas W. Bleeks Decapage selectif par voie chimique des surfaces enduites des substrats en super-alliage
US4548903A (en) * 1984-03-30 1985-10-22 The United States Of America As Represented By The Secretary Of The Air Force Method to reveal microstructures in single phase alloys
DE3414383C2 (de) * 1984-04-16 1986-09-04 MTU Motoren- und Turbinen-Union München GmbH, 8000 München Verfahren zum chemischen Abtragen von Aluminiumdiffusionsschichten
US4687545A (en) * 1986-06-18 1987-08-18 Macdermid, Incorporated Process for stripping tin or tin-lead alloy from copper
JPH0375386A (ja) * 1989-08-18 1991-03-29 Metsuku Kk 錫又は錫‐鉛合金の剥離方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
METAL FINISHING Bd. 89, Nr. 1A, Januar 1991, Seiten 388-396; STANLEY HIRSCH: 'stripping metallic coatings' siehe Seite 392-Seite 394 *

Also Published As

Publication number Publication date
DE59206696D1 (de) 1996-08-08
JPH06500363A (ja) 1994-01-13
DE4113283C2 (de) 1994-05-05
DE4113283A1 (de) 1992-10-29
US5462640A (en) 1995-10-31
EP0536362A1 (fr) 1993-04-14
ATE140041T1 (de) 1996-07-15
WO1992019792A1 (fr) 1992-11-12

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