EP0536362A1 - Ätzlösung. - Google Patents
Ätzlösung.Info
- Publication number
- EP0536362A1 EP0536362A1 EP92908839A EP92908839A EP0536362A1 EP 0536362 A1 EP0536362 A1 EP 0536362A1 EP 92908839 A EP92908839 A EP 92908839A EP 92908839 A EP92908839 A EP 92908839A EP 0536362 A1 EP0536362 A1 EP 0536362A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- hydrogen
- etching solution
- etching
- nitro
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/36—Alkaline compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
Definitions
- the invention relates to an etching solution according to the preamble of the first patent claim, a method for etching a layer of a metal from a substrate according to the preamble of the eighth patent claim and the use of a water-soluble, easily hydrogenatable organic nitro compound as an additive to an aqueous one Solution of an acid or a strongly basic metal hydroxide to prevent the release of hydrogen gas when metal dissolves in the solution.
- An etching solution and a method of this type are known from DE 32 48 006 AI.
- One subject of this document is a means for the selective removal of hard surface metal coatings, in particular ceramics, cerium et and mixtures based on nickel, from high-strength, high-temperature-resistant substrates, which is characterized by approximately 90 to 450 g / 1 H 2 SO 4 , approximately 20 to 240 g / 1 of a water-soluble, nitro-substituted aromatic compound, the rest water.
- Another subject of this publication is a method for removing hard surface metal coatings using this agent.
- the water-soluble, nitro-substituted aromatic compound preferably consists of m-nitrobenzene sodium sulfonate or sulfonic acid or the corresponding alkali metal or alkaline earth metal nitrobenzene sulfonates; however, the other organic nitro compounds which are mentioned in US Pat. No. 2,698,781 to be discussed below can also be used.
- the etching solution can also contain hydrofluoric acid, fluoroboric acid HBF 4 and surfactants as wetting agents.
- the publication does not specify the manner in which the etching solution described works.
- the nitroaromatic compound is only referred to as an oxidizing agent.
- Document etching process described accordingly is carried out at a temperature between about 49 ° C and 82 C ⁇ Vietnamesege.
- etching solution of the type mentioned at the outset is known from the already mentioned US Pat. No. 2,698,781.
- this etching solution consists of an acid and a nitro-substituted aromatic compound, the potential of which, under special conditions specified in the publication, is between -0.50 volts and -0.90 volts.
- the nitro-substituted aromatic compound is not used or is used only to a small extent during the etching process; it acts as an activator or catalyst for the etching reaction.
- hydrogen must form during the etching process.
- nitro-substituted aromatic compound Due to the condition that the potential of the nitro-substituted aromatic compound should be in the specified range, compounds are obviously selected from this class of compounds which do not form a reaction product with the metal or with the hydrogen formed after the etching process.
- One of the nitro-substituted aromatic compounds which has such a potential is the nitrobenzenesulfonic acid which is particularly preferred in the above-mentioned DE 32 48 006 A1.
- Further etching solutions containing additional components are known, for example, from the publications CH 394 761, DE 26 35 295 C2, DE 25 36 404 C2 and DE-OS 21 43 785.
- the subject of CH 394 761 is a mixture for the selective dissolution of a metal in the presence of a second metal on which the first metal is deposited, which is characterized in that it contains an organic nitro compound and an ammonium compound free of nitro groups, the mixture being liquid and contains at least 0.01% by weight of the organic nitro compound and the ammonium compound together and the mixture has a pH of 7-11, and a process for the preparation of the mixture and its use for removing a galvanic metal coating from a metal object covered with this.
- organic nitro compound aromatic nitro compounds such as. B. the nitrobenzenesulfonic acid already mentioned several times, but also nitroaliphatic compounds such as nitromethane or nitroethane.
- the mixture is basic, it cannot in any case contain a strong base such as alkali hydroxide; this is understandable because strong bases would release ammonia from the ammonium compounds. Furthermore, the concentration of hydroxyl ions should be relatively low.
- aqueous hydrofluoric acid solution is known as an etching solution.
- the publication relates to processes for the production of microstructures with large structural heights, in which a sacrificial layer is selectively etched away, so that self-supporting structures which only partially adhere to a substrate are formed. These structures can be used as an acceleration sensor.
- the aqueous solution of hydrofluoric acid is used as the etching solution. With this etching solution, a titanium layer can be etched selectively with respect to a nickel, copper or gold layer.
- etching solutions are frequently used in microstructure technology in order to selectively etch thin metal layers compared to other metals.
- self-supporting or intricately shaped, filigree microstructures are created, the size of which is often in the range below one hundred
- Micrometers approximately in the range between 5 and 10 microns. It goes without saying that such microstructures can be mechanically very sensitive. So that the thin, etching layers, which are often arranged in the bottom of microwells, and are wetted by the etching solution, must be worked with very low-viscosity solutions.
- the object of the invention is to propose etching solutions and methods for etching of the type mentioned at the beginning which contain an acid or strong base which attacks the metal and dissolves to form the corresponding metal ions, but which prevent or at least greatly reduce hydrogen evolution and which can therefore also be used in microstructure technology.
- the selective action of the attacking agent in the etching solution should not be impaired here.
- the object is achieved on the basis of the etching solutions and methods mentioned at the outset by means of the etching solutions or methods described in more detail in the characterizing part of claims 1 and 8.
- the further claims contain special configurations of the etching solutions according to the invention and the use described at the beginning.
- the invention solves the underlying problem in such a way that the etching solution contains such a nitro-substituted organic compound, the nitro group of which is easily nascent Hydrogen reacts and can therefore be easily hydrogenated, special concentration conditions preferably being maintained.
- the attacking agent in the etching solution according to the invention is usually an acid or an aqueous solution of the acid. Since the substrate from which a metal layer is to be etched off is often also made of metal, an acid is chosen which dissolves the metal layer but not the substrate. In microstructure technology, a dilute aqueous hydrofluoric acid solution is frequently used as the acid, with which, for example, titanium metal can be selectively etched away from nickel. In principle, many other inorganic or organic acids can also be used as an attacking agent, e.g. As hydrochloric acid, sulfuric acid, formic acid, acetic acid etc. If a metal layer is to be selectively etched away, one chooses such an acid which, although it rapidly dissolves the metal layer, does not attack the substrate, or at least does so much more slowly. The action of pure acids on the metal layer produces hydrogen.
- the invention is not limited to acids as an attacking agent.
- Some metals such as B. Aluminum are also by strongly basic metal hydroxides such. B. sodium hydroxide solution or potassium hydroxide solution or their aqueous solutions. This opens up another possibility of selectively etching off a metal layer from another metal. Hydrogen is also produced when metal is etched off with the pure base.
- Protonic organic compounds such as alcohols
- some organic nitro compounds can react with nascent hydrogen according to the following formula (any organic residue is denoted by R-):
- the hydrogen generated when pure acids or bases act on a metal can be trapped, so that when an etching solution is used which, in addition to the acids or bases, also contains such organic nitro compounds, the gas which is harmful to microstructures - does not form bubbles.
- Nitro-substituted organic compounds which react rapidly with nascent hydrogen in accordance with reaction equation 1 are referred to as readily hydrogenable compounds.
- the reaction equation (1) shows that at least 1/3 mol of an easily hydrogenable, monosubstituted nitro compound must be present in the etching solution in order to be able to trap one mol of hydrogen.
- two or more nitro-substituted organic compounds can also be used in the same way. If the nitro group contains two (in the general case: x) nitro groups, only 1/6 mol (correspondingly 1/3 * x mol) of the nitro compound is required in order to capture all the hydrogen formed during the reaction Mol of the hydrogen generated when metal is dissolved contains at least 1/3 nitro group equivalent in the etching solution.
- preliminary tests can be used to determine in a simple manner which organic nitro compounds are easily hydrogenable, since it only has to be determined whether they are in are able to trap the hydrogen that forms when metal is exposed to an acid or a strongly basic hydroxide.
- Such easily hydrogenatable organic nitro compounds can also be used in combination with other acids or hydroxides.
- nitro compounds are, for example, short-chain nitroaliphatics, in particular nitromethane, which is particularly preferred because of its high solubility in water, but also nitroethane or nitropropane.
- nitrophthalic acids such as 4-nitrophthalic acid, and picric acid are particularly suitable.
- solubility of the organic nitro compound in water turns out to be too low, a solubilizer, for example a short-chain alcohol such as methanol, can be added to the etching solution according to the invention.
- a solubilizer for example a short-chain alcohol such as methanol
- the amount of hydrogen that would be released depends on the charge of the resulting metal ions. Only the minimum quantities can be seen from the stochiometric equations. In practice it is necessary to work with an excess of acid (or base) as well as nitro compound so that the etching rate does not change significantly towards the end of the etching process. For the oxidation of the hydrogen, which occurs in different stochiometric amounts during the etching process depending on the valency of the metal to be etched, at least the molar amounts of nitro compound corresponding to the reaction equations must be present in order to prevent the development of hydrogen gas. However, it is advisable to use at least two to three times the stoichiometric amount of nitroverbin to work d u ng so that the nitro compound is always present in stochio ⁇ metric excess.
- the A compound When the hydrogen is oxidized by the nitro compound, the A compound is formed in the acidic etching medium, which is then present as the ammonium salt through salt formation with the acid.
- aliphatic nitro compounds are preferred as easily hydrogenable nitro compounds.
- hydrofluoric acid should be used in a maximum concentration of 10% by weight. At higher concentrations, the evolution of hydrogen cannot be completely suppressed.
- Aromatic nitro compounds are preferred for alkaline etching solutions because alkaline etching solutions can
- Nitroaliphatics with an alpha H atom form salts because of the CH - acidic properties and thus cause side reactions. These side reactions can be ruled out due to the lack of CH - acidic hydrogen, for example in the case of nitrophthalic acids. Nevertheless, side reactions are to be expected in the alkaline field because of the high stability of individual intermediates up to the amine as end product, so that the reaction does not necessarily have to proceed to the amine. Rather, azooxyaromatics, azoaromatics or hydrazoaromatics can also arise. Since less hydrogen is bound here, an even greater excess of aromatic nitro compound should preferably be used in the case of alkaline etching solutions.
- the positive properties of the etching solution according to the invention can be further improved if a wetting agent is also added.
- a wetting agent By the addition of the wetting agent, the O is bervidwood the etching solution over the reduced metal to be etched. This is particularly advantageous when very fine structures are to be etched free.
- the addition of a wetting agent causes the gas bubbles to be smaller, adhere less well to the surface and therefore more easily be removed from the solution.
- Suitable wetting agents are, for example, polyethylene glycol or lauryl sulfate.
- the advantage of the invention is that the hydrogen formation during etching can be prevented by simple means or at least greatly reduced. For this reason, the etching process is gentler, so that substrates with sensitive microstructures can also be etched without causing damage or deformation. The etching process remains observable during the entire etching time, so that the etching process remains optically controllable - if necessary also under the microscope - and can be interrupted if necessary. Furthermore, the method according to the invention is advantageous for safety reasons, because the hydrogen release is avoided. Another advantage of the etching solution according to the invention is that the metal layers to be etched cannot be covered with gas bubbles, so that the etching process takes place more uniformly and more quickly. The formation of pitting is avoided.
- the commonly used metal-attacking agent (acid or strong base) can still be used; it is only necessary to add the easily hydrogenable organic nitro compound.
- the surfaces etched off according to the invention are smoother and more shiny than without the added nitro compound.
- a free-standing microcoil was produced by selectively etching away titanium located between copper coil turns on aluminum oxide ceramic. 250 ml of 1.25% hydrofluoric acid with the addition of 18 ml of nitromethane and 10 ml of polyglycol-400 as wetting agent were used as the etching solution. The etching process could be followed optically, since there was no evolution of hydrogen. The titanium was selectively etched away from copper.
- the etching solution consisted of 50 ml of hydrofluoric acid, 4 ml of nitromethane and 4 ml of polyethylene glycol-400. was stirred with a magnetic stir bar at 500 rpm.
- 5% hydrofluoric acid A mixture of 100 ml of the acid, 8 ml of nitromethane and 8 ml of polyethylene glycol-400 was used as the first etching solution. A second etching solution was used for comparison purposes, but did not contain any nitromethane.
- composition of the etching solution 120 ml 8% hydrochloric acid and 8 ml nitromethane A 732 mg steel pin was etched with stirring for about 20 hours. During the etching no hydrogen evolution was' visible. 364 mg of steel were etched away during the stated time.
- composition of the etching solution 100 ml water, 5 ml concentrated nitric acid, 8 ml nitromethane
- Etching solution composition 85 ml glacial acetic acid, 10 ml concentrated hydrochloric acid, 15 ml nitromethane
- a 270 mg piece of titanium wire was completely dissolved within about 4 hours without noticeable hydrogen evolution.
- Etching solution composition 4 g sodium hydroxide, 4 3-nitrophthalic acid and 80 ml water
- composition of the etching solution 4 g sodium hydroxide, 4 g 4-nitrophthalic acid and 80 ml water
- 70 mg of aluminum could be etched from a 270 mg aluminum plate within 2.5 hours. No hydrogen formation was observed. As the etching time increased, the initially colorless etching solution turned yellow to brown.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4113283A DE4113283C2 (de) | 1991-04-24 | 1991-04-24 | Verwendung einer Ätzlösung zum selektiven Abätzen einer metallischen Opferschicht bei der Herstellung von Mikrostrukturen |
DE4113283 | 1991-04-24 | ||
PCT/DE1992/000321 WO1992019792A1 (de) | 1991-04-24 | 1992-04-21 | Ätzlösung |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0536362A1 true EP0536362A1 (de) | 1993-04-14 |
EP0536362B1 EP0536362B1 (de) | 1996-07-03 |
Family
ID=6430205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP92908839A Expired - Lifetime EP0536362B1 (de) | 1991-04-24 | 1992-04-21 | Ätzlösung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5462640A (de) |
EP (1) | EP0536362B1 (de) |
JP (1) | JPH06500363A (de) |
AT (1) | ATE140041T1 (de) |
DE (2) | DE4113283C2 (de) |
WO (1) | WO1992019792A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100661945B1 (ko) * | 1999-06-14 | 2006-12-28 | 후-쿠 후앙 | 광 입사에 의해 활성화되는 에너지 레벨 전이에 기초하는 전자기파 방사 장치 및 방법 |
DE10313887A1 (de) * | 2003-03-27 | 2004-10-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum selektiven Gewinnen von Gold aus goldhaltigen Materialien |
WO2008098593A1 (en) * | 2007-02-15 | 2008-08-21 | Basf Se | Titanium etchant composition |
CN114350366B (zh) * | 2021-12-09 | 2023-04-18 | 湖北兴福电子材料股份有限公司 | 一种氮化硅与p型多晶硅等速蚀刻液 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2698781A (en) * | 1953-04-27 | 1955-01-04 | Enthone | Accelerating action of acids on metals |
US3163524A (en) * | 1957-09-27 | 1964-12-29 | Eltex Chemical Corp | Selective stripping of electroplated metals |
US3666580A (en) * | 1969-03-20 | 1972-05-30 | Armco Steel Corp | Chemical milling method and bath |
US3677949A (en) * | 1970-09-04 | 1972-07-18 | Enthone | Selectively stripping tin and/or lead from copper substrates |
US4004956A (en) * | 1974-08-14 | 1977-01-25 | Enthone, Incorporated | Selectively stripping tin or tin-lead alloys from copper substrates |
US4042451A (en) * | 1975-08-05 | 1977-08-16 | M&T Chemicals Inc. | Selected stripping of nickel-iron alloys from ferrous substrates |
JPS5610396A (en) * | 1979-07-07 | 1981-02-02 | Nobuo Miyazawa | Additive for acid bath for descaling of stainless steel |
CA1185152A (en) * | 1982-01-22 | 1985-04-09 | Thomas W. Bleeks | Selective chemical removal of hard surface coatings from superalloy substrates |
US4548903A (en) * | 1984-03-30 | 1985-10-22 | The United States Of America As Represented By The Secretary Of The Air Force | Method to reveal microstructures in single phase alloys |
DE3414383C2 (de) * | 1984-04-16 | 1986-09-04 | MTU Motoren- und Turbinen-Union München GmbH, 8000 München | Verfahren zum chemischen Abtragen von Aluminiumdiffusionsschichten |
US4687545A (en) * | 1986-06-18 | 1987-08-18 | Macdermid, Incorporated | Process for stripping tin or tin-lead alloy from copper |
JPH0375386A (ja) * | 1989-08-18 | 1991-03-29 | Metsuku Kk | 錫又は錫‐鉛合金の剥離方法 |
-
1991
- 1991-04-24 DE DE4113283A patent/DE4113283C2/de not_active Expired - Fee Related
-
1992
- 1992-04-21 EP EP92908839A patent/EP0536362B1/de not_active Expired - Lifetime
- 1992-04-21 JP JP4507956A patent/JPH06500363A/ja active Pending
- 1992-04-21 US US07/962,801 patent/US5462640A/en not_active Expired - Fee Related
- 1992-04-21 AT AT92908839T patent/ATE140041T1/de not_active IP Right Cessation
- 1992-04-21 DE DE59206696T patent/DE59206696D1/de not_active Expired - Fee Related
- 1992-04-21 WO PCT/DE1992/000321 patent/WO1992019792A1/de active IP Right Grant
Non-Patent Citations (1)
Title |
---|
See references of WO9219792A1 * |
Also Published As
Publication number | Publication date |
---|---|
DE4113283C2 (de) | 1994-05-05 |
DE4113283A1 (de) | 1992-10-29 |
US5462640A (en) | 1995-10-31 |
EP0536362B1 (de) | 1996-07-03 |
WO1992019792A1 (de) | 1992-11-12 |
JPH06500363A (ja) | 1994-01-13 |
DE59206696D1 (de) | 1996-08-08 |
ATE140041T1 (de) | 1996-07-15 |
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Legal Events
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