EA201800470A1 - Способ изготовления графенового тонкопленочного транзистора - Google Patents

Способ изготовления графенового тонкопленочного транзистора

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Publication number
EA201800470A1
EA201800470A1 EA201800470A EA201800470A EA201800470A1 EA 201800470 A1 EA201800470 A1 EA 201800470A1 EA 201800470 A EA201800470 A EA 201800470A EA 201800470 A EA201800470 A EA 201800470A EA 201800470 A1 EA201800470 A1 EA 201800470A1
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EA
Eurasian Patent Office
Prior art keywords
manufacturing
graphene
layer
thin film
film transistor
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EA201800470A
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English (en)
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EA036020B1 (ru
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Сюаньюнь Ван
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Ухань Чайна Стар Оптоэлектроникс Текнолоджи Ко., Лтд
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Publication of EA201800470A1 publication Critical patent/EA201800470A1/ru
Publication of EA036020B1 publication Critical patent/EA036020B1/ru

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    • H01L29/66007—Multistep manufacturing processes
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    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Настоящее изобретение предоставляет способ изготовления графенового тонкопленочного транзистора, который включает осаждение слоя графена на поверхность медной фольги; осаждение слоя металла на поверхность слоя графена; присоединение слоя-подложки к поверхности слоя металла с образованием графеновой пленки; размещение графеновой пленки в растворе для травления меди до полного растворения медной фольги, затем перемещение графеновой пленки на целевую подложку и удаление слоя-подложки; определение структур истока и стока на поверхности слоя металла, изготовление электрода истока и электрода стока и изготовление электрода затвора на целевой подложке.
EA201800470A 2016-03-18 2016-04-01 Способ изготовления графенового тонкопленочного транзистора EA036020B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610156131.8A CN105679678A (zh) 2016-03-18 2016-03-18 一种石墨烯薄膜晶体管的制备方法
PCT/CN2016/078391 WO2017156803A1 (zh) 2016-03-18 2016-04-01 一种石墨烯薄膜晶体管的制备方法

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EA201800470A1 true EA201800470A1 (ru) 2019-01-31
EA036020B1 EA036020B1 (ru) 2020-09-15

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US (1) US10128453B2 (ru)
JP (1) JP6719581B2 (ru)
KR (1) KR102173432B1 (ru)
CN (1) CN105679678A (ru)
EA (1) EA036020B1 (ru)
GB (1) GB2563365B (ru)
WO (1) WO2017156803A1 (ru)

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KR101849360B1 (ko) * 2016-01-29 2018-04-16 한화테크윈 주식회사 그래핀 기반 적층체 및 이의 제조방법

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CN105679678A (zh) 2016-06-15
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KR20180114916A (ko) 2018-10-19
GB2563365A (en) 2018-12-12
US20180097191A1 (en) 2018-04-05
EA036020B1 (ru) 2020-09-15
GB2563365B (en) 2020-12-30
JP6719581B2 (ja) 2020-07-08
US10128453B2 (en) 2018-11-13
KR102173432B1 (ko) 2020-11-04
JP2019512881A (ja) 2019-05-16

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