CN103606535B - 软性显示器组件的制作方法及其制作的软性显示器组件 - Google Patents

软性显示器组件的制作方法及其制作的软性显示器组件 Download PDF

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CN103606535B
CN103606535B CN201310611655.8A CN201310611655A CN103606535B CN 103606535 B CN103606535 B CN 103606535B CN 201310611655 A CN201310611655 A CN 201310611655A CN 103606535 B CN103606535 B CN 103606535B
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flexible display
display assembly
soft substrate
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CN103606535A (zh
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胡国仁
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种软性显示器组件的制作方法及其制作的软性显示器组件，所述方法包括：步骤1、提供软性基底（22）；步骤2、在该软性基底（22）上形成石墨烯层（24）；步骤3、在石墨烯层（24）上形成保护层（26）；步骤4、在保护层（26）上形成低温多晶硅层（28）。本发明的软性显示器组件的制作方法及其制作的软性显示器组件，通过在软性基底上形成石墨烯层，有效导出低温多晶硅层制程中所产生的热量，进而避免热量对软性基底的影响，同时，不需要增加保护层的厚度，减小了内部应力，且利于薄型化。

Description

软性显示器组件的制作方法及其制作的软性显示器组件
技术领域
本发明涉及显示领域，尤其涉及一种软性显示器组件的制作方法及其制作的软性显示器组件。
背景技术
随着显示技术与信息产品的蓬勃发展，显示器已从传统的阴极射线管（cathoderaytubes，CRT）进入平面显示器（flatpaneldisplay，FPD）时代。而软性显示器（flexibledisplay）更因其与现有刚性玻璃面板平面显示器相比，具有更轻薄、可挠曲、耐冲击等性能而具安全性，且不受场合、空间限制，成为下一代显示器发展的新趋势。
软性薄膜晶体管（thinfilmtransistor，TFT）基板是软性显示器的重要组件之一，其基板材料的选择与开发更是软性显示器发展上最重要的议题。目前软性基板材料的选择有塑料基板（plasticsubstrate）、超薄玻璃（thinglass）基板、以及金属软板（metalfoil），其中塑料基板可以实现轻薄、耐冲击、低成本的理想，但塑料基板具有不耐高温制程、热膨胀系数较大等问题。
请参阅图1，为现有的一种软性薄膜晶体管基板的结构示意图，其包括：玻璃基板100、形成于玻璃基板100上的软性基底300、形成于软性基底300上的保护层500、形成于保护层500上的低温多晶硅层700及形成于低温多晶硅层700上的薄膜晶体管阵列（未图示），其中保护层500包括形成于软性基底300上的氮化硅层502及形成于氮化硅层502上的氧化硅层504，低温多晶硅层700一般通过非晶硅层经由退火工艺形成，且，由于低温多晶硅层700的形成还需要经过激光活化，而激光活化会产生很大的热量，当该热量传递到软性基底300时，可能导致软性基底300变形，严重影响软性薄膜晶体管基板的品质。
如图2所示，为了解决上述问题，现有另一种软性薄膜晶体管基板增加了保护层500’的氧化硅层504’的厚度（从500nm左右增加到1-2μm），以隔绝热量传递到软性基底300上。虽然，该种方法在一定程度上减小了软性基底300变形的几率，但，由于氧化硅层504’的厚度过大，则会导致应力过大，影响软性薄膜晶体管基板的卷曲性能，同时，还可能造成低温多硅层700结晶不良等问题。
发明内容
本发明的目的在于提供一种软性显示器组件的制作方法，其制程简单，能有效避免热量对软性基底的影响，提升了软性显示器组件的品质。
本发明的另一目的在于提供一种软性显示器组件，其结构简单，在制程中受热量影响较小，且具有较薄的厚度，利于实现薄型化。
为实现上述目的，本发明提供一种软性显示器组件的制作方法，包括以下步骤：
步骤1、提供软性基底；
步骤2、在该软性基底上形成石墨烯层；
步骤3、在石墨烯层上形成保护层；
步骤4、在保护层上形成低温多晶硅层。
所述软性基底由聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、或聚酰亚胺制成。
所述石墨烯层通过微波化学气相沉积、转移或旋涂工艺形成于所述软性基底上，所述石墨烯层厚度为10nm-100nm。
所述保护层包括氮化硅层、氧化硅层至少一层。
所述低温多晶硅层通过非晶硅层经由退火工艺形成，再通过掺杂、激光活化工艺处理。
本发明还提供一种软性显示器组件，包括：软性基底、形成于软性基底上的石墨烯层、形成于石墨烯层上的保护层及形成于保护层上的低温多晶硅层。
所述软性基底由聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、或聚酰亚胺制成。
所述石墨烯层通过微波化学气相沉积、转移或旋涂工艺形成于所述软性基底上，所述石墨烯层厚度为10nm-100nm。
所述保护层包括氮化硅层、氧化硅层至少一层。
所述低温多晶硅层通过非晶硅层经由退火工艺形成，再通过掺杂、激光活化工艺处理。
本发明的有益效果：本发明的软性显示器组件的制作方法及其制作的软性显示器组件，通过在软性基底上形成石墨烯层，有效导出低温多晶硅层制程中所产生的热量，进而避免热量对软性基底的影响，同时，不需要增加保护层的厚度，减小了内部应力，且利于薄型化。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的一种软性薄膜晶体管基板的结构示意图；
图2为现有的另一种软性薄膜晶体管基板的结构示意图；
图3为本发明软性显示器组件的制作方法的流程图；
图4为本发明软性显示器组件的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3及图4，本发明提供一种软性显示器组件的制作方法，包括以下步骤：
步骤1、提供软性基底22。
所述软性基底22由聚对苯二甲酸乙二醇酯（PET）、聚萘二甲酸乙二醇酯（PEN）、或聚酰亚胺（PI）制成。在本实施例中，所述软性基底22形成于玻璃基板20上。
步骤2、在该软性基底22上形成石墨烯层24。
所述石墨烯（graphene）层24通过微波化学气相沉积（microwaveCVD）、转移或旋涂（spincoat）工艺形成于所述软性基底22上。石墨烯是一种由碳原子构成的单层片状结构的材料，三维立体结构的石墨烯具有超高等效热导率和超低界面热阻，因此该石墨烯层24具有优异的导热效果，能够很好的导出热量，保护软性基底22。其中，所述石墨烯层24厚度没有特别要求，但从利于薄型化的方面考虑，优选厚度为10nm-100nm。
值得一提的是，该石墨烯层24可以为一整层还可以进行图案化，以适应不同产品的不同要求。
步骤3、在石墨烯层24上形成保护层26。
所述保护层26包括氮化硅层（SiNx）262、氧化硅层（SiOx）264至少一层，在本实施例中，所述保护层26为氮化硅层262与氧化硅层264的叠层，其中，氮化硅层262形成于石墨烯层24上，氧化硅层264形成于氮化硅层262上。所述氮化硅层262、氧化硅层264可利用化学气相沉积法形成。
其中，由于设置了石墨烯层24，故而保护层26中氧化硅层264的厚度可以相对较薄（此时氧化硅层264厚度可以为500nm左右），相较于传统的增加氧化硅层厚度的方案（此时氧化硅层厚度为1-2μm）而言，厚度明显减小；进而保证整个软性显示器组件的厚度相对较小。
步骤4、在保护层26上形成低温多晶硅层28。
所述低温多晶硅层28通过非晶硅层经由退火工艺形成，然后再通过掺杂、激光活化等工艺处理。激光活化时，激光产生的热量通过石墨烯层24导出，能有效避免软性基底22受到热量的影响，且不需要加厚保护层26的厚度，利于实现薄型化。
请参阅图4，本发明还提供一种软性显示器组件，包括：软性基底22、形成于软性基底22上的石墨烯层24、形成于石墨烯层24上的保护层26及形成于保护层26上的低温多晶硅层28。在本实施例中，所述软性显示器组件形成于玻璃基板20上。
具体地，所述软性基底22由聚对苯二甲酸乙二醇酯（PET）、聚萘二甲酸乙二醇酯（PEN）、或聚酰亚胺（PI）制成。所述石墨烯层24通过微波化学气相沉积（microwaveCVD）、转移或旋涂（spincoat）工艺形成于所述软性基底22上。石墨烯是一种由碳原子构成的单层片状结构的材料，三维立体结构的石墨烯具有超高等效热导率和超低界面热阻，因此该石墨烯层24具有优异的导热效果，能够很好的导出热量，保护软性基底22。其中，所述石墨烯层24厚度没有特别要求，但从利于薄型化的方面考虑，优选厚度为10nm-100nm。
所述保护层26包括氮化硅层262、氧化硅层264至少一层，在本实施例中，所述保护层26为氮化硅层262与氧化硅层264的叠层，其中，氮化硅层262形成于石墨烯层24上，氧化硅层264形成于氮化硅层262上。所述氮化硅层262、氧化硅层264可利用化学气相沉积法形成。
其中，由于设置了石墨烯层24，故而保护层26中氧化硅层264的厚度可以相对较薄（此时氧化硅层264厚度可以为500nm左右），相较于传统的增加氧化硅层厚度的方案（此时氧化硅层厚度为1-2μm）而言，厚度明显减小；进而保证整个软性显示器组件的厚度相对较小。
所述低温多晶硅层28通过非晶硅层经由退火工艺形成，然后再通过掺杂、激光活化等工艺处理。激光活化时，激光产生的热量通过石墨烯层24导出，能有效避免软性基底22受到热量的影响，且不需要加厚保护层26的厚度，利于实现薄型化。
值得一提的是，该石墨烯层24可以为一整层还可以进行图案化，以适应不同产品的不同要求。
综上所述，本发明的软性显示器组件的制作方法及其制作的软性显示器组件，通过在软性基底上形成石墨烯层，有效导出低温多晶硅层制程中所产生的热量，进而避免热量对软性基底的影响，同时，不需要增加保护层的厚度，减小了内部应力，且利于薄型化。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (8)

1.一种软性显示器组件的制作方法，其特征在于，包括以下步骤：
步骤1、提供软性基底(22)；
步骤2、在该软性基底(22)上形成石墨烯层(24)；
步骤3、在石墨烯层(24)上形成保护层(26)；
步骤4、在保护层(26)上形成低温多晶硅层(28)；
所述石墨烯层(24)通过微波化学气相沉积、转移或旋涂工艺形成于所述软性基底(22)上，所述石墨烯层(24)厚度为10nm-100nm。
2.如权利要求1所述的软性显示器组件的制作方法，其特征在于，所述软性基底(22)由聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、或聚酰亚胺制成。
3.如权利要求1所述的软性显示器组件的制作方法，其特征在于，所述保护层(26)包括氮化硅层(262)、氧化硅层(264)至少一层。
4.如权利要求1所述的软性显示器组件的制作方法，其特征在于，所述低温多晶硅层(28)通过非晶硅层经由退火工艺形成，再通过掺杂和激光活化工艺处理。
5.一种软性显示器组件，其特征在于，包括：软性基底(22)、形成于软性基底(22)上的石墨烯层(24)、形成于石墨烯层(24)上的保护层(26)及形成于保护层(26)上的低温多晶硅层(28)；
所述石墨烯层(24)通过微波化学气相沉积、转移或旋涂工艺形成于所述软性基底(22)上，所述石墨烯层(24)厚度为10nm-100nm。
6.如权利要求5所述的软性显示器组件，其特征在于，所述软性基底(22)由聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、或聚酰亚胺制成。
7.如权利要求5所述的软性显示器组件，其特征在于，所述保护层(26)包括氮化硅层(262)、氧化硅层(264)至少一层。
8.如权利要求5所述的软性显示器组件，其特征在于，所述低温多晶硅层(28)通过非晶硅层经由退火工艺形成，再通过掺杂和激光活化工艺处理。
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