DK1594165T3 - Fremgangsmåde til elektrisk isolering af et underlag til et effektmodul - Google Patents

Fremgangsmåde til elektrisk isolering af et underlag til et effektmodul

Info

Publication number
DK1594165T3
DK1594165T3 DK05009075T DK05009075T DK1594165T3 DK 1594165 T3 DK1594165 T3 DK 1594165T3 DK 05009075 T DK05009075 T DK 05009075T DK 05009075 T DK05009075 T DK 05009075T DK 1594165 T3 DK1594165 T3 DK 1594165T3
Authority
DK
Denmark
Prior art keywords
substrate
power module
electrically insulating
casing
recess
Prior art date
Application number
DK05009075T
Other languages
English (en)
Inventor
Karlheinz Augustin
Christian Goebl
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Application granted granted Critical
Publication of DK1594165T3 publication Critical patent/DK1594165T3/da

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Processing Of Terminals (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK05009075T 2004-05-04 2005-04-26 Fremgangsmåde til elektrisk isolering af et underlag til et effektmodul DK1594165T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004021927A DE102004021927B4 (de) 2004-05-04 2004-05-04 Verfahren zur inneren elektrischen Isolation eines Substrats für ein Leistungshalbleitermodul

Publications (1)

Publication Number Publication Date
DK1594165T3 true DK1594165T3 (da) 2008-10-06

Family

ID=34935721

Family Applications (1)

Application Number Title Priority Date Filing Date
DK05009075T DK1594165T3 (da) 2004-05-04 2005-04-26 Fremgangsmåde til elektrisk isolering af et underlag til et effektmodul

Country Status (8)

Country Link
US (1) US7723244B2 (da)
EP (1) EP1594165B1 (da)
JP (1) JP4783583B2 (da)
AT (1) ATE398336T1 (da)
DE (2) DE102004021927B4 (da)
DK (1) DK1594165T3 (da)
ES (1) ES2308330T3 (da)
PL (1) PL1594165T3 (da)

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DE102005059360B4 (de) * 2005-12-13 2011-09-22 Semikron Elektronik Gmbh & Co. Kg Vorrichtung und Verfahren zum Verguss von Schaltungsanordnungen
DE102006006425B4 (de) * 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontaktausführung
DE102006006424B4 (de) * 2006-02-13 2011-11-17 Semikron Elektronik Gmbh & Co. Kg Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren
FR2905379B1 (fr) * 2006-09-04 2008-11-07 Bertin Technologies Soc Par Ac Dispositif de collecte et de separation de particules et de microorganismes presents dans l'air ambiant
US8164176B2 (en) 2006-10-20 2012-04-24 Infineon Technologies Ag Semiconductor module arrangement
DE102006058692A1 (de) * 2006-12-13 2008-06-26 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Kontaktfedern
DE102007024159B3 (de) * 2007-05-24 2008-11-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul
DE102008017454B4 (de) 2008-04-05 2010-02-04 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit hermetisch dichter Schaltungsanordnung und Herstellungsverfahren hierzu
DE102009000885A1 (de) 2009-02-16 2010-08-26 Semikron Elektronik Gmbh & Co. Kg Halbleitermodul
DE102009000884B3 (de) 2009-02-16 2010-10-07 Semikron Elektronik Gmbh & Co. Kg Halbleitermodul mit Gehäuse aus präkeramischem Polymer
DE102009046858B3 (de) 2009-11-19 2011-05-05 Infineon Technologies Ag Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls
US8511851B2 (en) * 2009-12-21 2013-08-20 Cree, Inc. High CRI adjustable color temperature lighting devices
DE102011004544B4 (de) 2011-02-22 2013-06-13 Semikron Elektronik Gmbh & Co. Kg Schaltungsanordnung
JP5762902B2 (ja) 2011-09-16 2015-08-12 日本発條株式会社 接触端子
JP6825306B2 (ja) * 2016-11-02 2021-02-03 富士電機株式会社 半導体装置
DE102018133456A1 (de) * 2018-12-21 2020-06-25 Rogers Germany Gmbh Verfahren zum Verkapseln mindestens eines Trägersubstrats, Elektronikmodul und Werkzeug zum Verkapseln eines Trägersubstrats
DE102020131493B4 (de) 2020-11-27 2023-04-13 Semikron Elektronik Gmbh & Co. Kg Verkettete Anlage und Verfahren zur inneren elektrischen Isolation einer leistungselektronischen Schalteinrichtung

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JP4783583B2 (ja) 2011-09-28
DE102004021927B4 (de) 2008-07-03
ES2308330T3 (es) 2008-12-01
EP1594165B1 (de) 2008-06-11
JP2005322902A (ja) 2005-11-17
DE502005004373D1 (de) 2008-07-24
US20050250247A1 (en) 2005-11-10
ATE398336T1 (de) 2008-07-15
PL1594165T3 (pl) 2008-11-28
US7723244B2 (en) 2010-05-25
DE102004021927A1 (de) 2005-12-01
EP1594165A2 (de) 2005-11-09
EP1594165A3 (de) 2007-06-27

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