DK0569540T3 - Komplementær logikfamilie med parallelle logiske indgange - Google Patents

Komplementær logikfamilie med parallelle logiske indgange

Info

Publication number
DK0569540T3
DK0569540T3 DK92906350.1T DK92906350T DK0569540T3 DK 0569540 T3 DK0569540 T3 DK 0569540T3 DK 92906350 T DK92906350 T DK 92906350T DK 0569540 T3 DK0569540 T3 DK 0569540T3
Authority
DK
Denmark
Prior art keywords
logic
fet
clip
fets
circuit
Prior art date
Application number
DK92906350.1T
Other languages
English (en)
Inventor
Albert W Vinal
Original Assignee
Thunderbird Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24599896&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DK0569540(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Thunderbird Tech Inc filed Critical Thunderbird Tech Inc
Application granted granted Critical
Publication of DK0569540T3 publication Critical patent/DK0569540T3/da

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H03K19/0963—Synchronous circuits, i.e. using clock signals using transistors of complementary type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DK92906350.1T 1991-01-31 1992-01-31 Komplementær logikfamilie med parallelle logiske indgange DK0569540T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/648,219 US5247212A (en) 1991-01-31 1991-01-31 Complementary logic input parallel (clip) logic circuit family

Publications (1)

Publication Number Publication Date
DK0569540T3 true DK0569540T3 (da) 1995-10-16

Family

ID=24599896

Family Applications (1)

Application Number Title Priority Date Filing Date
DK92906350.1T DK0569540T3 (da) 1991-01-31 1992-01-31 Komplementær logikfamilie med parallelle logiske indgange

Country Status (12)

Country Link
US (1) US5247212A (da)
EP (1) EP0569540B1 (da)
JP (1) JP3242650B2 (da)
KR (1) KR100221565B1 (da)
AT (1) ATE127639T1 (da)
AU (1) AU1412392A (da)
CA (1) CA2101559C (da)
DE (1) DE69204659T2 (da)
DK (1) DK0569540T3 (da)
ES (1) ES2077406T3 (da)
GR (1) GR3017608T3 (da)
WO (1) WO1992014304A1 (da)

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* Cited by examiner, † Cited by third party
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US5305269A (en) 1991-05-31 1994-04-19 Thunderbird Technologies, Inc. Differential latching inverter and random access memory using same
US5519344A (en) * 1994-06-30 1996-05-21 Proebsting; Robert J. Fast propagation technique in CMOS integrated circuits
US5831451A (en) * 1996-07-19 1998-11-03 Texas Instruments Incorporated Dynamic logic circuits using transistors having differing threshold voltages
US5926050A (en) * 1996-07-29 1999-07-20 Townsend And Townsend And Crew Llp Separate set/reset paths for time critical signals
US5914844A (en) * 1997-10-14 1999-06-22 Cypress Semiconductor Corp. Overvoltage-tolerant input-output buffers having a switch configured to isolate a pull up transistor from a voltage supply
US6049242A (en) 1997-10-14 2000-04-11 Cypress Semiconductor Corp. Voltage reference source for an overvoltage-tolerant bus interface
US6496054B1 (en) 2000-05-13 2002-12-17 Cypress Semiconductor Corp. Control signal generator for an overvoltage-tolerant interface circuit on a low voltage process
US7342421B2 (en) 2003-09-24 2008-03-11 Infineon Technologies Ag CMOS circuit arrangement
US7439771B2 (en) * 2003-09-30 2008-10-21 Koninklijke Philips Electronics N.V. Integrated interface circuitry for integrated VRM power field effect transistors
US7009265B2 (en) * 2004-06-11 2006-03-07 International Business Machines Corporation Low capacitance FET for operation at subthreshold voltages
US8018268B1 (en) 2004-11-19 2011-09-13 Cypress Semiconductor Corporation Over-voltage tolerant input circuit
US7816738B2 (en) * 2005-11-30 2010-10-19 International Business Machines Corporation Low-cost FEOL for ultra-low power, near sub-vth device structures
KR100660909B1 (ko) * 2006-01-06 2006-12-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
FI20160183L (fi) * 2016-07-14 2016-07-15 Artto Mikael Aurola Parannettu puolijohdekokoonpano

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US3728556A (en) * 1971-11-24 1973-04-17 United Aircraft Corp Regenerative fet converter circuitry
US3911289A (en) * 1972-08-18 1975-10-07 Matsushita Electric Ind Co Ltd MOS type semiconductor IC device
US4053792A (en) * 1974-06-27 1977-10-11 International Business Machines Corporation Low power complementary field effect transistor (cfet) logic circuit
US3967988A (en) * 1974-08-05 1976-07-06 Motorola, Inc. Diffusion guarded metal-oxide-silicon field effect transistors
JPS5759689B2 (da) * 1974-09-30 1982-12-16 Citizen Watch Co Ltd
UST952012I4 (da) * 1976-01-20 1976-11-02
US4080539A (en) * 1976-11-10 1978-03-21 Rca Corporation Level shift circuit
US4216390A (en) * 1978-10-04 1980-08-05 Rca Corporation Level shift circuit
US4258272A (en) * 1979-03-19 1981-03-24 National Semiconductor Corporation TTL to CMOS input buffer circuit
IT1139929B (it) * 1981-02-06 1986-09-24 Rca Corp Circuito generatore di impulsi utilizzante una sorgente di corrente
US4390988A (en) * 1981-07-14 1983-06-28 Rockwell International Corporation Efficient means for implementing many-to-one multiplexing logic in CMOS/SOS
US4491741A (en) * 1983-04-14 1985-01-01 Motorola, Inc. Active pull-up circuit
US4567385A (en) * 1983-06-22 1986-01-28 Harris Corporation Power switched logic gates
JPS60236322A (ja) * 1984-05-09 1985-11-25 Mitsubishi Electric Corp Ｍｏｓトランジスタ回路
US4649296A (en) * 1984-07-13 1987-03-10 At&T Bell Laboratories Synthetic CMOS static logic gates
US4645962A (en) * 1984-09-28 1987-02-24 Rol Industries Inc. Slip ring assembly and method of making
DE3511625A1 (de) * 1985-03-29 1986-10-02 Siemens AG, 1000 Berlin und 8000 München Verdrahtete oder-anordnung
US4785204A (en) * 1985-06-21 1988-11-15 Mitsubishi Denki Kabushiki Kaisha Coincidence element and a data transmission path
US4810906A (en) * 1985-09-25 1989-03-07 Texas Instruments Inc. Vertical inverter circuit
US4764691A (en) * 1985-10-15 1988-08-16 American Microsystems, Inc. CMOS programmable logic array using NOR gates for clocking
US4698526A (en) * 1985-10-17 1987-10-06 Inmos Corporation Source follower CMOS input buffer
US4701643A (en) * 1986-03-24 1987-10-20 Ford Microelectronics, Inc. FET gate current limiter circuits
US4701642A (en) * 1986-04-28 1987-10-20 International Business Machines Corporation BICMOS binary logic circuits
US4798979A (en) * 1986-09-23 1989-01-17 Honeywell Inc. Schottky diode logic for E-mode FET/D-mode FET VLSI circuits
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US4928156A (en) * 1987-07-13 1990-05-22 Motorola, Inc. N-channel MOS transistors having source/drain regions with germanium
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US5030853A (en) * 1990-03-21 1991-07-09 Thunderbird Technologies, Inc. High speed logic and memory family using ring segment buffer
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Also Published As

Publication number Publication date
ES2077406T3 (es) 1995-11-16
KR100221565B1 (ko) 1999-09-15
EP0569540B1 (en) 1995-09-06
CA2101559C (en) 2001-05-15
AU1412392A (en) 1992-09-07
JP3242650B2 (ja) 2001-12-25
GR3017608T3 (en) 1996-01-31
US5247212A (en) 1993-09-21
DE69204659D1 (de) 1995-10-12
DE69204659T2 (de) 1996-04-04
WO1992014304A1 (en) 1992-08-20
ATE127639T1 (de) 1995-09-15
CA2101559A1 (en) 1992-08-01
JPH06505373A (ja) 1994-06-16
EP0569540A1 (en) 1993-11-18

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