DE944571C - Verfahren zur Beeinflussung DER elektrischen Eigenschaften von Halbleiterkoerpern bei deren Herstellung aus reinem Halbleitermaterial, welches nur sehr kleine Anteile an Geber- und Nehmerberunreinigung enthaelt - Google Patents

Verfahren zur Beeinflussung DER elektrischen Eigenschaften von Halbleiterkoerpern bei deren Herstellung aus reinem Halbleitermaterial, welches nur sehr kleine Anteile an Geber- und Nehmerberunreinigung enthaelt

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Publication number
DE944571C
DE944571C DEW8848A DEW0008848A DE944571C DE 944571 C DE944571 C DE 944571C DE W8848 A DEW8848 A DE W8848A DE W0008848 A DEW0008848 A DE W0008848A DE 944571 C DE944571 C DE 944571C
Authority
DE
Germany
Prior art keywords
germanium
oxidizing
donor
aluminum
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEW8848A
Other languages
German (de)
English (en)
Inventor
Jack Hall Scaff
Henry Charles Theuerer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE944571C publication Critical patent/DE944571C/de
Expired legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B31/00—Disazo and polyazo dyes of the type A->B->C, A->B->C->D, or the like, prepared by diazotising and coupling
    • C09B31/02—Disazo dyes
    • C09B31/025—Disazo dyes containing acid groups, e.g. -COOH, -SO3H, -PO3H2, -OSO3H, -OPO2H2; Salts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Electrotherapy Devices (AREA)
  • Coloring (AREA)
DEW8848A 1948-12-29 1952-06-19 Verfahren zur Beeinflussung DER elektrischen Eigenschaften von Halbleiterkoerpern bei deren Herstellung aus reinem Halbleitermaterial, welches nur sehr kleine Anteile an Geber- und Nehmerberunreinigung enthaelt Expired DE944571C (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67894A US2602763A (en) 1948-12-29 1948-12-29 Preparation of semiconductive materials for translating devices
US236662A US2753281A (en) 1948-12-29 1951-07-13 Method of preparing germanium for translating devices

Publications (1)

Publication Number Publication Date
DE944571C true DE944571C (de) 1956-06-21

Family

ID=26748380

Family Applications (2)

Application Number Title Priority Date Filing Date
DEW8848A Expired DE944571C (de) 1948-12-29 1952-06-19 Verfahren zur Beeinflussung DER elektrischen Eigenschaften von Halbleiterkoerpern bei deren Herstellung aus reinem Halbleitermaterial, welches nur sehr kleine Anteile an Geber- und Nehmerberunreinigung enthaelt
DEC6841A Expired DE944577C (de) 1948-12-29 1952-12-18 Verfahren zur Herstellung kupfer- oder nickelhaltiger Disazofarbstoffe

Family Applications After (1)

Application Number Title Priority Date Filing Date
DEC6841A Expired DE944577C (de) 1948-12-29 1952-12-18 Verfahren zur Herstellung kupfer- oder nickelhaltiger Disazofarbstoffe

Country Status (7)

Country Link
US (2) US2602763A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE490848A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH295809A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (2) DE944571C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR1058979A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (2) GB692094A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (4) NL88607C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1064486B (de) * 1956-11-05 1959-09-03 Pechiney Prod Chimiques Sa Verfahren zum Reinigen von Silicium

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US2686279A (en) * 1949-09-28 1954-08-10 Rca Corp Semiconductor device
US2783197A (en) * 1952-01-25 1957-02-26 Gen Electric Method of making broad area semiconductor devices
BE523775A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1950-09-29
US2762953A (en) * 1951-05-15 1956-09-11 Sylvania Electric Prod Contact rectifiers and methods
BE516364A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1951-12-20
NL176299B (nl) * 1952-03-10 Hydrotech Int Inc Inrichting voor het losneembaar afsluiten van pijpleidingen.
US2714566A (en) * 1952-05-28 1955-08-02 Rca Corp Method of treating a germanium junction rectifier
NL178757B (nl) * 1952-06-02 British Steel Corp Werkwijze en inrichting voor het continu produceren van een metaalstrook uit metaalpoeder.
DE928674C (de) * 1952-06-21 1955-06-06 Licentia Gmbh Verfahren zum Herstellen von Einkristallen und deren Verwendung
US2750262A (en) * 1952-07-12 1956-06-12 Bell Telephone Labor Inc Process for separating components of a fusible material
BE522097A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1952-08-13
US2726357A (en) * 1952-10-22 1955-12-06 Columbia Broadcasting Syst Inc Semiconductor device
US2719799A (en) * 1952-11-13 1955-10-04 Rca Corp Zone melting furnace and method of zone melting
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US3162556A (en) * 1953-01-07 1964-12-22 Hupp Corp Introduction of disturbance points in a cadmium sulfide transistor
US2874448A (en) * 1953-02-13 1959-02-24 William F Haldeman Method for stabilizing semi-conductor rectifiers
US2821490A (en) * 1953-03-11 1958-01-28 Sylvania Electric Prod Titanate rectifiers
US2849341A (en) * 1953-05-01 1958-08-26 Rca Corp Method for making semi-conductor devices
US2837771A (en) * 1953-07-08 1958-06-10 Standard Oil Co Casting method
US2759855A (en) * 1953-08-24 1956-08-21 Eagle Picher Co Coated electronic device and method of making same
GB805291A (en) * 1953-12-02 1958-12-03 Philco Corp Improvements in methods of electrolytically etching or plating bodies of semiconductive material
NL96864C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1954-01-14 1900-01-01
US2740700A (en) * 1954-05-14 1956-04-03 Bell Telephone Labor Inc Method for portraying p-n junctions in silicon
BE538469A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1954-05-27
US2891201A (en) * 1954-12-22 1959-06-16 Itt Crystal contact device
US2785096A (en) * 1955-05-25 1957-03-12 Texas Instruments Inc Manufacture of junction-containing silicon crystals
US2996918A (en) * 1955-12-27 1961-08-22 Ibm Junction transistor thermostat
NL133498C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1958-06-18
US3154439A (en) * 1959-04-09 1964-10-27 Sprague Electric Co Method for forming a protective skin for transistor
US3143443A (en) * 1959-05-01 1964-08-04 Hughes Aircraft Co Method of fabricating semiconductor devices
US3192141A (en) * 1959-12-24 1965-06-29 Western Electric Co Simultaneous etching and monitoring of semiconductor bodies
CA734135A (en) * 1961-12-28 1966-05-10 R. Gunther-Mohr Gerard Electrical contact formation
GB1019924A (en) * 1963-08-26 1966-02-09 Ici Ltd Stabilisation of chlorinated hydrocarbons
US7563022B2 (en) * 2003-11-28 2009-07-21 Ontario Power Generation Inc. Methods and apparatus for inspecting reactor pressure tubes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402582A (en) * 1941-04-04 1946-06-25 Bell Telephone Labor Inc Preparation of silicon materials
GB594783A (en) * 1944-01-05 1947-11-19 Western Electric Co Improvements in the preparation of silicon ingots
GB632942A (en) * 1945-12-29 1949-12-05 Western Electric Co Improvements in rectifiers and methods of making them

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE625778C (de) * 1934-02-16 1936-02-15 I G Farbenindustrie Akt Ges Verfahren zur Herstellung von Azofarbstoffen
DE626839C (de) * 1934-05-19 1936-03-05 I G Farbenindustrie Akt Ges Verfahren zur Herstellung von Azofarbstoffen
DE698979C (de) * 1935-01-05 1940-11-20 I G Farbenindustrie Akt Ges Verfahren zur Herstellung von Disazofarbstoffen
US2419561A (en) * 1941-08-20 1947-04-29 Gen Electric Co Ltd Crystal contact of which one element is mainly silicon
FR1012618A (fr) * 1949-12-29 1952-07-15 Francolor Sa Nouveaux colorants métallifères et leurs procédés de préparation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402582A (en) * 1941-04-04 1946-06-25 Bell Telephone Labor Inc Preparation of silicon materials
GB594783A (en) * 1944-01-05 1947-11-19 Western Electric Co Improvements in the preparation of silicon ingots
GB632942A (en) * 1945-12-29 1949-12-05 Western Electric Co Improvements in rectifiers and methods of making them

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1064486B (de) * 1956-11-05 1959-09-03 Pechiney Prod Chimiques Sa Verfahren zum Reinigen von Silicium

Also Published As

Publication number Publication date
US2602763A (en) 1952-07-08
NL171020B (nl)
CH295809A (fr) 1954-01-15
GB713597A (en) 1954-08-11
DE944577C (de) 1956-06-21
NL149164B (nl)
NL77451C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE490848A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL88607C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US2753281A (en) 1956-07-03
GB692094A (en) 1953-05-27
FR1058979A (fr) 1954-03-22

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