CH295809A - Procédé pour la préparation de germanium semi-conducteur. - Google Patents

Procédé pour la préparation de germanium semi-conducteur.

Info

Publication number
CH295809A
CH295809A CH295809DA CH295809A CH 295809 A CH295809 A CH 295809A CH 295809D A CH295809D A CH 295809DA CH 295809 A CH295809 A CH 295809A
Authority
CH
Switzerland
Prior art keywords
preparation
semiconductor germanium
germanium
semiconductor
Prior art date
Application number
Other languages
English (en)
Inventor
Incorporated Western E Company
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH295809A publication Critical patent/CH295809A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B31/00—Disazo and polyazo dyes of the type A->B->C, A->B->C->D, or the like, prepared by diazotising and coupling
    • C09B31/02—Disazo dyes
    • C09B31/025—Disazo dyes containing acid groups, e.g. -COOH, -SO3H, -PO3H2, -OSO3H, -OPO2H2; Salts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Electrotherapy Devices (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Coloring (AREA)
  • Carbon And Carbon Compounds (AREA)
CH295809D 1948-12-29 1949-12-29 Procédé pour la préparation de germanium semi-conducteur. CH295809A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67894A US2602763A (en) 1948-12-29 1948-12-29 Preparation of semiconductive materials for translating devices
US236662A US2753281A (en) 1948-12-29 1951-07-13 Method of preparing germanium for translating devices

Publications (1)

Publication Number Publication Date
CH295809A true CH295809A (fr) 1954-01-15

Family

ID=26748380

Family Applications (1)

Application Number Title Priority Date Filing Date
CH295809D CH295809A (fr) 1948-12-29 1949-12-29 Procédé pour la préparation de germanium semi-conducteur.

Country Status (7)

Country Link
US (2) US2602763A (fr)
BE (1) BE490848A (fr)
CH (1) CH295809A (fr)
DE (2) DE944571C (fr)
FR (1) FR1058979A (fr)
GB (2) GB692094A (fr)
NL (4) NL149164B (fr)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686279A (en) * 1949-09-28 1954-08-10 Rca Corp Semiconductor device
BE506110A (fr) * 1950-09-29
US2783197A (en) * 1952-01-25 1957-02-26 Gen Electric Method of making broad area semiconductor devices
US2762953A (en) * 1951-05-15 1956-09-11 Sylvania Electric Prod Contact rectifiers and methods
NL174375B (nl) * 1951-12-20 Cabot Corp Werkwijze voor het bereiden van een thermisch stabiele, bij hoge temperatuur tegen oxydatie bestendige nikkellegering, alsmede voorwerpen, welke geheel of gedeeltelijk uit een dergelijke legering zijn vervaardigd.
NL176299B (nl) * 1952-03-10 Hydrotech Int Inc Inrichting voor het losneembaar afsluiten van pijpleidingen.
US2714566A (en) * 1952-05-28 1955-08-02 Rca Corp Method of treating a germanium junction rectifier
NL178757B (nl) * 1952-06-02 British Steel Corp Werkwijze en inrichting voor het continu produceren van een metaalstrook uit metaalpoeder.
DE928674C (de) * 1952-06-21 1955-06-06 Licentia Gmbh Verfahren zum Herstellen von Einkristallen und deren Verwendung
US2750262A (en) * 1952-07-12 1956-06-12 Bell Telephone Labor Inc Process for separating components of a fusible material
BE522097A (fr) * 1952-08-13
US2726357A (en) * 1952-10-22 1955-12-06 Columbia Broadcasting Syst Inc Semiconductor device
US2719799A (en) * 1952-11-13 1955-10-04 Rca Corp Zone melting furnace and method of zone melting
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US3162556A (en) * 1953-01-07 1964-12-22 Hupp Corp Introduction of disturbance points in a cadmium sulfide transistor
US2874448A (en) * 1953-02-13 1959-02-24 William F Haldeman Method for stabilizing semi-conductor rectifiers
US2821490A (en) * 1953-03-11 1958-01-28 Sylvania Electric Prod Titanate rectifiers
US2849341A (en) * 1953-05-01 1958-08-26 Rca Corp Method for making semi-conductor devices
US2837771A (en) * 1953-07-08 1958-06-10 Standard Oil Co Casting method
US2759855A (en) * 1953-08-24 1956-08-21 Eagle Picher Co Coated electronic device and method of making same
GB805291A (en) * 1953-12-02 1958-12-03 Philco Corp Improvements in methods of electrolytically etching or plating bodies of semiconductive material
BE534817A (fr) * 1954-01-14 1900-01-01
US2740700A (en) * 1954-05-14 1956-04-03 Bell Telephone Labor Inc Method for portraying p-n junctions in silicon
BE538469A (fr) * 1954-05-27
US2891201A (en) * 1954-12-22 1959-06-16 Itt Crystal contact device
US2785096A (en) * 1955-05-25 1957-03-12 Texas Instruments Inc Manufacture of junction-containing silicon crystals
US2996918A (en) * 1955-12-27 1961-08-22 Ibm Junction transistor thermostat
GB872995A (en) * 1956-11-05 1961-07-19 Pechiney Prod Chimiques Sa Process for purifying silicon or a ferro-silicon alloy
NL239732A (fr) * 1958-06-18
US3154439A (en) * 1959-04-09 1964-10-27 Sprague Electric Co Method for forming a protective skin for transistor
US3143443A (en) * 1959-05-01 1964-08-04 Hughes Aircraft Co Method of fabricating semiconductor devices
US3192141A (en) * 1959-12-24 1965-06-29 Western Electric Co Simultaneous etching and monitoring of semiconductor bodies
CA734135A (en) * 1961-12-28 1966-05-10 R. Gunther-Mohr Gerard Electrical contact formation
GB1019924A (en) * 1963-08-26 1966-02-09 Ici Ltd Stabilisation of chlorinated hydrocarbons
US7563022B2 (en) * 2003-11-28 2009-07-21 Ontario Power Generation Inc. Methods and apparatus for inspecting reactor pressure tubes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE625778C (de) * 1934-02-16 1936-02-15 I G Farbenindustrie Akt Ges Verfahren zur Herstellung von Azofarbstoffen
DE626839C (de) * 1934-05-19 1936-03-05 I G Farbenindustrie Akt Ges Verfahren zur Herstellung von Azofarbstoffen
DE698979C (de) * 1935-01-05 1940-11-20 I G Farbenindustrie Akt Ges Verfahren zur Herstellung von Disazofarbstoffen
FR957542A (fr) * 1941-04-04 1950-02-23
US2419561A (en) * 1941-08-20 1947-04-29 Gen Electric Co Ltd Crystal contact of which one element is mainly silicon
GB594783A (en) * 1944-01-05 1947-11-19 Western Electric Co Improvements in the preparation of silicon ingots
NL70486C (fr) * 1945-12-29
FR1012618A (fr) * 1949-12-29 1952-07-15 Francolor Sa Nouveaux colorants métallifères et leurs procédés de préparation

Also Published As

Publication number Publication date
NL171020B (nl)
DE944571C (de) 1956-06-21
DE944577C (de) 1956-06-21
FR1058979A (fr) 1954-03-22
US2602763A (en) 1952-07-08
US2753281A (en) 1956-07-03
GB692094A (en) 1953-05-27
NL149164B (nl)
NL88607C (fr)
GB713597A (en) 1954-08-11
NL77451C (fr)
BE490848A (fr)

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