DE69932872D1 - Magnetisches Dünnfilmelement, Speicherelement damit und Schreibe- und Leseverfahren mit einem solchen Speicherelement - Google Patents
Magnetisches Dünnfilmelement, Speicherelement damit und Schreibe- und Leseverfahren mit einem solchen SpeicherelementInfo
- Publication number
- DE69932872D1 DE69932872D1 DE69932872T DE69932872T DE69932872D1 DE 69932872 D1 DE69932872 D1 DE 69932872D1 DE 69932872 T DE69932872 T DE 69932872T DE 69932872 T DE69932872 T DE 69932872T DE 69932872 D1 DE69932872 D1 DE 69932872D1
- Authority
- DE
- Germany
- Prior art keywords
- memory element
- write
- thin film
- therewith
- magnetic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1563398 | 1998-01-28 | ||
JP01563398A JP3679593B2 (ja) | 1998-01-28 | 1998-01-28 | 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69932872D1 true DE69932872D1 (de) | 2006-10-05 |
DE69932872T2 DE69932872T2 (de) | 2007-08-30 |
Family
ID=11894134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69932872T Expired - Lifetime DE69932872T2 (de) | 1998-01-28 | 1999-01-27 | Magnetisches Dünnfilmelement, Speicherelement damit und Schreibe- und Leseverfahren mit einem solchen Speicherelement |
Country Status (4)
Country | Link |
---|---|
US (4) | US6219275B1 (de) |
EP (1) | EP0933782B1 (de) |
JP (1) | JP3679593B2 (de) |
DE (1) | DE69932872T2 (de) |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3679593B2 (ja) * | 1998-01-28 | 2005-08-03 | キヤノン株式会社 | 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法 |
EP0959475A3 (de) * | 1998-05-18 | 2000-11-08 | Canon Kabushiki Kaisha | Magnetischer Dünnfilmspeicher sowie Schreibe- und Leseverfahren und Anordnung unter Verwendung solchen Speichers |
JP3559722B2 (ja) | 1999-04-16 | 2004-09-02 | キヤノン株式会社 | 磁気抵抗素子、固体メモリ |
US6611405B1 (en) | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
JP2001084758A (ja) * | 1999-09-17 | 2001-03-30 | Fujitsu Ltd | 強磁性トンネル接合ランダムアクセスメモリ、スピンバルブランダムアクセスメモリ、単一強磁性膜ランダムアクセスメモリ、およびこれらをつかったメモリセルアレイ |
EP1143537A1 (de) * | 1999-09-27 | 2001-10-10 | Matsushita Electric Industrial Co., Ltd. | Magnetowiderstandseffekt-basiertes speicherbauelement und dessen herstellungsverfahren |
EP1115164B1 (de) | 2000-01-07 | 2005-05-25 | Sharp Kabushiki Kaisha | Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement |
DE10040811A1 (de) * | 2000-08-21 | 2002-03-14 | Infineon Technologies Ag | Monolithisch integrierbare Induktivität |
US7035138B2 (en) * | 2000-09-27 | 2006-04-25 | Canon Kabushiki Kaisha | Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions |
JP3524486B2 (ja) | 2000-10-13 | 2004-05-10 | キヤノン株式会社 | 磁気抵抗素子及び該素子を用いたメモリ素子 |
TW544677B (en) * | 2000-12-26 | 2003-08-01 | Matsushita Electric Ind Co Ltd | Magneto-resistance memory device |
JP4666774B2 (ja) * | 2001-01-11 | 2011-04-06 | キヤノン株式会社 | 磁気薄膜メモリ素子、磁気薄膜メモリおよび情報記録再生方法 |
JP4666775B2 (ja) * | 2001-01-11 | 2011-04-06 | キヤノン株式会社 | 磁気薄膜メモリ素子、磁気薄膜メモリおよび情報記録方法 |
US6713830B2 (en) * | 2001-03-19 | 2004-03-30 | Canon Kabushiki Kaisha | Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element |
JP3667244B2 (ja) | 2001-03-19 | 2005-07-06 | キヤノン株式会社 | 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法 |
TW560095B (en) | 2001-04-02 | 2003-11-01 | Canon Kk | Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element |
JP4944315B2 (ja) * | 2001-08-13 | 2012-05-30 | キヤノン株式会社 | 磁気抵抗効果膜、それを備えたメモリ素子及びそれを用いたメモリ |
US6611455B2 (en) | 2001-04-20 | 2003-08-26 | Canon Kabushiki Kaisha | Magnetic memory |
JP3482469B2 (ja) * | 2001-05-21 | 2003-12-22 | 北海道大学長 | 磁気記憶素子、磁気メモリ、磁気記録方法、磁気記憶素子の製造方法、及び磁気メモリの製造方法 |
JP2002368306A (ja) | 2001-06-07 | 2002-12-20 | Canon Inc | 磁気抵抗効果膜およびそれを用いたメモリ |
DE10128964B4 (de) * | 2001-06-15 | 2012-02-09 | Qimonda Ag | Digitale magnetische Speicherzelleneinrichtung |
US6510080B1 (en) * | 2001-08-28 | 2003-01-21 | Micron Technology Inc. | Three terminal magnetic random access memory |
EP1288958A3 (de) * | 2001-08-30 | 2003-07-09 | Canon Kabushiki Kaisha | Magnetoresistives Element und dieses verwendender magnetoresistiver Speicher |
JP2003086775A (ja) | 2001-09-07 | 2003-03-20 | Canon Inc | 磁気メモリ装置およびその製造方法 |
FR2829868A1 (fr) * | 2001-09-20 | 2003-03-21 | Centre Nat Rech Scient | Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture |
JP4775926B2 (ja) * | 2001-09-28 | 2011-09-21 | キヤノン株式会社 | 磁気メモリ装置の読み出し回路 |
JP3854836B2 (ja) * | 2001-09-28 | 2006-12-06 | キヤノン株式会社 | 垂直磁化膜を用いた磁気メモリの設計方法 |
JP4756803B2 (ja) * | 2001-09-28 | 2011-08-24 | キヤノン株式会社 | 磁気メモリ装置の書き込み回路 |
JP3592282B2 (ja) | 2001-10-01 | 2004-11-24 | キヤノン株式会社 | 磁気抵抗効果膜、およびそれを用いたメモリ |
JP3854839B2 (ja) | 2001-10-02 | 2006-12-06 | キヤノン株式会社 | 磁気抵抗素子を用いた不揮発固体メモリ |
JP2003197872A (ja) * | 2001-12-26 | 2003-07-11 | Canon Inc | 磁気抵抗効果膜を用いたメモリ |
JP3736483B2 (ja) * | 2002-03-20 | 2006-01-18 | ソニー株式会社 | 強磁性トンネル接合素子を用いた磁気記憶装置 |
US6724652B2 (en) * | 2002-05-02 | 2004-04-20 | Micron Technology, Inc. | Low remanence flux concentrator for MRAM devices |
US6667897B1 (en) * | 2002-06-28 | 2003-12-23 | International Business Machines Corporation | Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer |
KR100499136B1 (ko) * | 2002-12-14 | 2005-07-04 | 삼성전자주식회사 | 전자 스핀의존 산란을 이용한 자성매체 및 자성매체정보재생장치 및 재생방법 |
DE10301092B4 (de) * | 2003-01-14 | 2006-06-29 | Infineon Technologies Ag | MRAM-Speicherzelle |
US6845038B1 (en) | 2003-02-01 | 2005-01-18 | Alla Mikhailovna Shukh | Magnetic tunnel junction memory device |
US7002228B2 (en) * | 2003-02-18 | 2006-02-21 | Micron Technology, Inc. | Diffusion barrier for improving the thermal stability of MRAM devices |
JP4095498B2 (ja) * | 2003-06-23 | 2008-06-04 | 株式会社東芝 | 磁気ランダムアクセスメモリ、電子カードおよび電子装置 |
JP4253225B2 (ja) | 2003-07-09 | 2009-04-08 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
JP2005079258A (ja) | 2003-08-29 | 2005-03-24 | Canon Inc | 磁性体のエッチング加工方法、磁気抵抗効果膜、および磁気ランダムアクセスメモリ |
JP2005079508A (ja) | 2003-09-03 | 2005-03-24 | Canon Inc | 磁性膜及び多層磁性膜、磁性膜の磁化反転方法及び磁化反転機構、磁気ランダムアクセスメモリ |
US7072209B2 (en) * | 2003-12-29 | 2006-07-04 | Micron Technology, Inc. | Magnetic memory having synthetic antiferromagnetic pinned layer |
JP2005209248A (ja) * | 2004-01-20 | 2005-08-04 | Hitachi Ltd | 磁気ヘッド及び磁気記録再生装置 |
JP2005315678A (ja) | 2004-04-28 | 2005-11-10 | Canon Inc | 検出方法、検出デバイス及び検出用キット |
US20060039089A1 (en) | 2004-08-17 | 2006-02-23 | Kabushiki Kaisha Toshiba | Magnetic oscillator, magnetic head, and magnetic recording and reproducing apparatus |
JP5032009B2 (ja) * | 2004-08-17 | 2012-09-26 | 株式会社東芝 | 磁気センサ、磁気ヘッド、および磁気記録再生装置 |
JP4731927B2 (ja) | 2005-01-31 | 2011-07-27 | キヤノン株式会社 | 磁性体センサおよび検出キット |
US7379321B2 (en) * | 2005-02-04 | 2008-05-27 | Hitachi Global Storage Technologies Netherlands B.V. | Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect |
US7602591B2 (en) * | 2005-06-22 | 2009-10-13 | Tdk Corporation | Exchange-coupled free layer with out-of-plane magnetization |
US20070115715A1 (en) * | 2005-11-23 | 2007-05-24 | Ryu Ho J | Magnetic access memory device using perpendicular magnetization and fabrication method thereof |
JP4786331B2 (ja) | 2005-12-21 | 2011-10-05 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
JP4514721B2 (ja) * | 2006-02-09 | 2010-07-28 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置 |
JP2007299880A (ja) * | 2006-04-28 | 2007-11-15 | Toshiba Corp | 磁気抵抗効果素子,および磁気抵抗効果素子の製造方法 |
FR2902890B1 (fr) * | 2006-06-22 | 2008-11-07 | Commissariat Energie Atomique | Procede et systeme pour ajuster la sensibilite d'un capteur magnetoresistif |
JP4550777B2 (ja) | 2006-07-07 | 2010-09-22 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ |
JP5044157B2 (ja) * | 2006-07-11 | 2012-10-10 | 株式会社東芝 | 磁気抵抗効果素子,磁気ヘッド,および磁気再生装置 |
JP2008085220A (ja) * | 2006-09-28 | 2008-04-10 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッド、および磁気再生装置 |
FR2907587B1 (fr) | 2006-10-23 | 2008-12-26 | Commissariat Energie Atomique | Dispositif magnetique a animation perpendiculaire et a couche intercalaire compensatrice d'interactions. |
FR2910716B1 (fr) * | 2006-12-26 | 2010-03-26 | Commissariat Energie Atomique | Dispositif magnetique multicouches, procede pour sa realisation, capteur de champ magnetique, memoire magnetique et porte logique mettant en oeuvre un tel dispositif |
US20080174936A1 (en) * | 2007-01-19 | 2008-07-24 | Western Lights Semiconductor Corp. | Apparatus and Method to Store Electrical Energy |
JP4649433B2 (ja) * | 2007-03-27 | 2011-03-09 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気記憶装置及び磁気メモリ |
JP4388093B2 (ja) | 2007-03-27 | 2009-12-24 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置 |
US7697322B2 (en) * | 2007-07-10 | 2010-04-13 | Qimonda Ag | Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module |
TWI343055B (en) * | 2007-12-10 | 2011-06-01 | Ind Tech Res Inst | Magnetic memory cell structure with thermal assistant and magnetic random access memory |
US7929258B2 (en) * | 2008-01-22 | 2011-04-19 | Seagate Technology Llc | Magnetic sensor including a free layer having perpendicular to the plane anisotropy |
US20090257168A1 (en) * | 2008-04-11 | 2009-10-15 | Northern Lights Semiconductor Corp. | Apparatus for Storing Electrical Energy |
JP5039007B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP5039006B2 (ja) | 2008-09-26 | 2012-10-03 | 株式会社東芝 | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置 |
JP2010080839A (ja) | 2008-09-29 | 2010-04-08 | Toshiba Corp | 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置 |
TW201135766A (en) * | 2010-04-01 | 2011-10-16 | Chien-Chiang Chan | Energy storage device |
JP2016537827A (ja) | 2013-10-01 | 2016-12-01 | イー1023 コーポレイションE1023 Corporation | 磁気強化型エネルギー貯蔵システムおよび方法 |
US11804322B1 (en) | 2023-07-03 | 2023-10-31 | King Faisal University | Ultra-density nanostructure GdFe thin film with large perpendicular magnetic anisotropy for a new generation of spintronic device |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0423293A (ja) | 1990-05-18 | 1992-01-27 | Toshiba Corp | 磁気メモリセル及び磁性薄膜 |
JP3231313B2 (ja) | 1990-08-22 | 2001-11-19 | 株式会社日立製作所 | 磁気ヘッド |
US5173873A (en) | 1990-06-28 | 1992-12-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High speed magneto-resistive random access memory |
DE69225920T2 (de) * | 1991-03-06 | 1998-10-15 | Mitsubishi Electric Corp | Magnetische Dünnfilmspeicheranordnung |
WO1993010530A1 (en) * | 1991-11-22 | 1993-05-27 | Seiko Epson Corporation | Magnetooptical recording media |
US5347485A (en) * | 1992-03-03 | 1994-09-13 | Mitsubishi Denki Kabushiki Kaisha | Magnetic thin film memory |
US5343422A (en) * | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
US5577020A (en) * | 1993-10-08 | 1996-11-19 | Tdk Corporation | Magneto-optical disc with intermediate film layer between a recording film and a dielectric film |
US5841611A (en) * | 1994-05-02 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same |
JPH08321016A (ja) | 1995-05-25 | 1996-12-03 | Sanyo Electric Co Ltd | 磁気抵抗効果膜 |
JP3293437B2 (ja) * | 1995-12-19 | 2002-06-17 | 松下電器産業株式会社 | 磁気抵抗効果素子、磁気抵抗効果型ヘッド及びメモリー素子 |
US5768183A (en) * | 1996-09-25 | 1998-06-16 | Motorola, Inc. | Multi-layer magnetic memory cells with improved switching characteristics |
JP3351694B2 (ja) | 1996-10-28 | 2002-12-03 | 日本ビクター株式会社 | 磁性メモリ |
US5774394A (en) * | 1997-05-22 | 1998-06-30 | Motorola, Inc. | Magnetic memory cell with increased GMR ratio |
JP3679593B2 (ja) * | 1998-01-28 | 2005-08-03 | キヤノン株式会社 | 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法 |
JP3697106B2 (ja) | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | 半導体基板の作製方法及び半導体薄膜の作製方法 |
EP0959475A3 (de) * | 1998-05-18 | 2000-11-08 | Canon Kabushiki Kaisha | Magnetischer Dünnfilmspeicher sowie Schreibe- und Leseverfahren und Anordnung unter Verwendung solchen Speichers |
EP1115164B1 (de) * | 2000-01-07 | 2005-05-25 | Sharp Kabushiki Kaisha | Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement |
-
1998
- 1998-01-28 JP JP01563398A patent/JP3679593B2/ja not_active Expired - Fee Related
-
1999
- 1999-01-25 US US09/236,356 patent/US6219275B1/en not_active Expired - Lifetime
- 1999-01-27 EP EP99300618A patent/EP0933782B1/de not_active Expired - Lifetime
- 1999-01-27 DE DE69932872T patent/DE69932872T2/de not_active Expired - Lifetime
-
2001
- 2001-02-28 US US09/794,499 patent/US6654279B2/en not_active Expired - Lifetime
-
2003
- 2003-10-22 US US10/689,717 patent/US6847545B2/en not_active Expired - Lifetime
-
2004
- 2004-11-01 US US10/976,815 patent/US20050083727A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US6847545B2 (en) | 2005-01-25 |
EP0933782A3 (de) | 2000-05-03 |
US20010021125A1 (en) | 2001-09-13 |
EP0933782A2 (de) | 1999-08-04 |
JPH11213650A (ja) | 1999-08-06 |
US6219275B1 (en) | 2001-04-17 |
DE69932872T2 (de) | 2007-08-30 |
US20050083727A1 (en) | 2005-04-21 |
JP3679593B2 (ja) | 2005-08-03 |
EP0933782B1 (de) | 2006-08-23 |
US20040085803A1 (en) | 2004-05-06 |
US6654279B2 (en) | 2003-11-25 |
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