DE69932872D1 - Magnetisches Dünnfilmelement, Speicherelement damit und Schreibe- und Leseverfahren mit einem solchen Speicherelement - Google Patents

Magnetisches Dünnfilmelement, Speicherelement damit und Schreibe- und Leseverfahren mit einem solchen Speicherelement

Info

Publication number
DE69932872D1
DE69932872D1 DE69932872T DE69932872T DE69932872D1 DE 69932872 D1 DE69932872 D1 DE 69932872D1 DE 69932872 T DE69932872 T DE 69932872T DE 69932872 T DE69932872 T DE 69932872T DE 69932872 D1 DE69932872 D1 DE 69932872D1
Authority
DE
Germany
Prior art keywords
memory element
write
thin film
therewith
magnetic thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69932872T
Other languages
English (en)
Other versions
DE69932872T2 (de
Inventor
Naoki Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69932872D1 publication Critical patent/DE69932872D1/de
Application granted granted Critical
Publication of DE69932872T2 publication Critical patent/DE69932872T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
DE69932872T 1998-01-28 1999-01-27 Magnetisches Dünnfilmelement, Speicherelement damit und Schreibe- und Leseverfahren mit einem solchen Speicherelement Expired - Lifetime DE69932872T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01563398A JP3679593B2 (ja) 1998-01-28 1998-01-28 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法
JP1563398 1998-01-28

Publications (2)

Publication Number Publication Date
DE69932872D1 true DE69932872D1 (de) 2006-10-05
DE69932872T2 DE69932872T2 (de) 2007-08-30

Family

ID=11894134

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69932872T Expired - Lifetime DE69932872T2 (de) 1998-01-28 1999-01-27 Magnetisches Dünnfilmelement, Speicherelement damit und Schreibe- und Leseverfahren mit einem solchen Speicherelement

Country Status (4)

Country Link
US (4) US6219275B1 (de)
EP (1) EP0933782B1 (de)
JP (1) JP3679593B2 (de)
DE (1) DE69932872T2 (de)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
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JP3679593B2 (ja) * 1998-01-28 2005-08-03 キヤノン株式会社 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法
EP0959475A3 (de) * 1998-05-18 2000-11-08 Canon Kabushiki Kaisha Magnetischer Dünnfilmspeicher sowie Schreibe- und Leseverfahren und Anordnung unter Verwendung solchen Speichers
JP3559722B2 (ja) 1999-04-16 2004-09-02 キヤノン株式会社 磁気抵抗素子、固体メモリ
US6611405B1 (en) 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
JP2001084758A (ja) * 1999-09-17 2001-03-30 Fujitsu Ltd 強磁性トンネル接合ランダムアクセスメモリ、スピンバルブランダムアクセスメモリ、単一強磁性膜ランダムアクセスメモリ、およびこれらをつかったメモリセルアレイ
EP1143537A1 (de) * 1999-09-27 2001-10-10 Matsushita Electric Industrial Co., Ltd. Magnetowiderstandseffekt-basiertes speicherbauelement und dessen herstellungsverfahren
DE60110944T2 (de) 2000-01-07 2006-04-27 Sharp K.K. Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement
DE10040811A1 (de) * 2000-08-21 2002-03-14 Infineon Technologies Ag Monolithisch integrierbare Induktivität
US7035138B2 (en) * 2000-09-27 2006-04-25 Canon Kabushiki Kaisha Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions
JP3524486B2 (ja) 2000-10-13 2004-05-10 キヤノン株式会社 磁気抵抗素子及び該素子を用いたメモリ素子
TW544677B (en) * 2000-12-26 2003-08-01 Matsushita Electric Ind Co Ltd Magneto-resistance memory device
JP4666774B2 (ja) * 2001-01-11 2011-04-06 キヤノン株式会社 磁気薄膜メモリ素子、磁気薄膜メモリおよび情報記録再生方法
JP4666775B2 (ja) * 2001-01-11 2011-04-06 キヤノン株式会社 磁気薄膜メモリ素子、磁気薄膜メモリおよび情報記録方法
JP3667244B2 (ja) 2001-03-19 2005-07-06 キヤノン株式会社 磁気抵抗素子、それを用いたメモリ素子、磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの記録再生方法
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JP4944315B2 (ja) * 2001-08-13 2012-05-30 キヤノン株式会社 磁気抵抗効果膜、それを備えたメモリ素子及びそれを用いたメモリ
US6611455B2 (en) 2001-04-20 2003-08-26 Canon Kabushiki Kaisha Magnetic memory
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JP2002368306A (ja) 2001-06-07 2002-12-20 Canon Inc 磁気抵抗効果膜およびそれを用いたメモリ
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US6721201B2 (en) * 2001-08-30 2004-04-13 Canon Kabushiki Kaisha Magnetoresistive film and memory using the same
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FR2829868A1 (fr) * 2001-09-20 2003-03-21 Centre Nat Rech Scient Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture
JP4775926B2 (ja) * 2001-09-28 2011-09-21 キヤノン株式会社 磁気メモリ装置の読み出し回路
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JP3854836B2 (ja) * 2001-09-28 2006-12-06 キヤノン株式会社 垂直磁化膜を用いた磁気メモリの設計方法
JP3592282B2 (ja) 2001-10-01 2004-11-24 キヤノン株式会社 磁気抵抗効果膜、およびそれを用いたメモリ
JP3854839B2 (ja) 2001-10-02 2006-12-06 キヤノン株式会社 磁気抵抗素子を用いた不揮発固体メモリ
JP2003197872A (ja) * 2001-12-26 2003-07-11 Canon Inc 磁気抵抗効果膜を用いたメモリ
JP3736483B2 (ja) * 2002-03-20 2006-01-18 ソニー株式会社 強磁性トンネル接合素子を用いた磁気記憶装置
US6724652B2 (en) * 2002-05-02 2004-04-20 Micron Technology, Inc. Low remanence flux concentrator for MRAM devices
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JP4649433B2 (ja) * 2007-03-27 2011-03-09 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記憶装置及び磁気メモリ
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JP5039007B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039006B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
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Also Published As

Publication number Publication date
US20010021125A1 (en) 2001-09-13
US6654279B2 (en) 2003-11-25
US20050083727A1 (en) 2005-04-21
US6847545B2 (en) 2005-01-25
JPH11213650A (ja) 1999-08-06
EP0933782A2 (de) 1999-08-04
EP0933782B1 (de) 2006-08-23
EP0933782A3 (de) 2000-05-03
US20040085803A1 (en) 2004-05-06
JP3679593B2 (ja) 2005-08-03
US6219275B1 (en) 2001-04-17
DE69932872T2 (de) 2007-08-30

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