DE69838790D1 - Verfahren zur oxidation durch in situ erzeugten dampf - Google Patents
Verfahren zur oxidation durch in situ erzeugten dampfInfo
- Publication number
- DE69838790D1 DE69838790D1 DE69838790T DE69838790T DE69838790D1 DE 69838790 D1 DE69838790 D1 DE 69838790D1 DE 69838790 T DE69838790 T DE 69838790T DE 69838790 T DE69838790 T DE 69838790T DE 69838790 D1 DE69838790 D1 DE 69838790D1
- Authority
- DE
- Germany
- Prior art keywords
- situ
- oxidation
- steam produced
- steam
- produced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title 1
- 230000003647 oxidation Effects 0.000 title 1
- 238000007254 oxidation reaction Methods 0.000 title 1
- 238000004326 stimulated echo acquisition mode for imaging Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/14—Methods for preparing oxides or hydroxides in general
- C01B13/32—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process
- C01B13/322—Methods for preparing oxides or hydroxides in general by oxidation or hydrolysis of elements or compounds in the liquid or solid state or in non-aqueous solution, e.g. sol-gel process of elements or compounds in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US89377497A | 1997-07-11 | 1997-07-11 | |
US893774 | 1997-07-11 | ||
US09/033,391 US6037273A (en) | 1997-07-11 | 1998-03-02 | Method and apparatus for insitu vapor generation |
US33391 | 1998-03-02 | ||
PCT/US1998/011577 WO1999003141A1 (en) | 1997-07-11 | 1998-06-05 | Method and apparatus for in situ vapor generation |
EP98925253.1A EP1018150B2 (de) | 1997-07-11 | 1998-06-05 | Verfahren zur oxidation durch in situ erzeugten dampf |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69838790D1 true DE69838790D1 (de) | 2008-01-10 |
DE69838790T2 DE69838790T2 (de) | 2008-10-30 |
DE69838790T3 DE69838790T3 (de) | 2017-09-28 |
Family
ID=25402075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69838790.2T Expired - Lifetime DE69838790T3 (de) | 1997-07-11 | 1998-06-05 | Verfahren zur oxidation durch in situ erzeugten dampf |
Country Status (4)
Country | Link |
---|---|
US (1) | US6037273A (de) |
JP (2) | JP5762705B2 (de) |
KR (1) | KR100396066B1 (de) |
DE (1) | DE69838790T3 (de) |
Families Citing this family (68)
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TW471068B (en) * | 1997-03-05 | 2002-01-01 | Hitachi Ltd | Method for fabricating semiconductor integrated circuit device with insulation film |
JPH10340909A (ja) | 1997-06-06 | 1998-12-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6159866A (en) * | 1998-03-02 | 2000-12-12 | Applied Materials, Inc. | Method for insitu vapor generation for forming an oxide on a substrate |
US6291868B1 (en) * | 1998-02-26 | 2001-09-18 | Micron Technology, Inc. | Forming a conductive structure in a semiconductor device |
TW457555B (en) * | 1998-03-09 | 2001-10-01 | Siemens Ag | Surface passivation using silicon oxynitride |
US6352941B1 (en) * | 1998-08-26 | 2002-03-05 | Texas Instruments Incorporated | Controllable oxidation technique for high quality ultrathin gate oxide formation |
US6835672B1 (en) * | 1998-10-15 | 2004-12-28 | Texas Instruments Incorporated | Selective oxidation for semiconductor device fabrication |
JP2000349081A (ja) * | 1999-06-07 | 2000-12-15 | Sony Corp | 酸化膜形成方法 |
US6440382B1 (en) * | 1999-08-31 | 2002-08-27 | Micron Technology, Inc. | Method for producing water for use in manufacturing semiconductors |
JP2001274154A (ja) | 2000-01-18 | 2001-10-05 | Applied Materials Inc | 成膜方法、成膜装置、半導体装置及びその製造方法 |
JP2001305368A (ja) * | 2000-04-21 | 2001-10-31 | Shin Etsu Chem Co Ltd | 光導波路基板の製造方法 |
US6534401B2 (en) | 2000-04-27 | 2003-03-18 | Applied Materials, Inc. | Method for selectively oxidizing a silicon/metal composite film stack |
KR100560867B1 (ko) | 2000-05-02 | 2006-03-13 | 동경 엘렉트론 주식회사 | 산화방법 및 산화시스템 |
TW578214B (en) * | 2000-05-29 | 2004-03-01 | Tokyo Electron Ltd | Method of forming oxynitride film or the like and system for carrying out the same |
US20020118942A1 (en) * | 2001-02-26 | 2002-08-29 | Shin-Etsu Chemical Co., Ltd. | Method for producing an optical waveguide substrate and an optical waveguide substrate |
JP5121102B2 (ja) * | 2001-07-11 | 2013-01-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6602799B2 (en) * | 2001-09-17 | 2003-08-05 | Taiwan Semiconductor Manufacturing Co., Ltd | Method of forming a uniform ultra-thin gate oxide layer |
US6451662B1 (en) | 2001-10-04 | 2002-09-17 | International Business Machines Corporation | Method of forming low-leakage on-chip capacitor |
US6828201B1 (en) | 2001-10-22 | 2004-12-07 | Cypress Semiconductor Corporation | Method of manufacturing a top insulating layer for a sonos-type device |
WO2004010465A2 (en) * | 2002-07-19 | 2004-01-29 | Aviza Technology, Inc. | Thin dielectric formation by steam oxidation |
US6916744B2 (en) * | 2002-12-19 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile |
US7273638B2 (en) * | 2003-01-07 | 2007-09-25 | International Business Machines Corp. | High density plasma oxidation |
US6852645B2 (en) * | 2003-02-13 | 2005-02-08 | Texas Instruments Incorporated | High temperature interface layer growth for high-k gate dielectric |
JP3965167B2 (ja) * | 2003-07-04 | 2007-08-29 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
US8536492B2 (en) * | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
JP4238812B2 (ja) * | 2003-11-20 | 2009-03-18 | 東京エレクトロン株式会社 | 被処理体の酸化装置 |
TW200525636A (en) * | 2003-11-20 | 2005-08-01 | Tokyo Electron Ltd | Oxidation method and oxidation system for workpieces |
US7183166B2 (en) * | 2003-11-25 | 2007-02-27 | Macronix International Co., Ltd. | Method for forming oxide on ONO structure |
US6869892B1 (en) | 2004-01-30 | 2005-03-22 | Tokyo Electron Limited | Method of oxidizing work pieces and oxidation system |
JP4586544B2 (ja) * | 2004-02-17 | 2010-11-24 | 東京エレクトロン株式会社 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
JP4609098B2 (ja) * | 2004-03-24 | 2011-01-12 | 東京エレクトロン株式会社 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
US20060019033A1 (en) * | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
US8323754B2 (en) * | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US20060148139A1 (en) * | 2005-01-06 | 2006-07-06 | Ng Hock K | Selective second gate oxide growth |
US20060157095A1 (en) * | 2005-01-19 | 2006-07-20 | Pham Xuyen N | Systems and methods for spinning semiconductor wafers |
US7972441B2 (en) * | 2005-04-05 | 2011-07-05 | Applied Materials, Inc. | Thermal oxidation of silicon using ozone |
US7326655B2 (en) * | 2005-09-29 | 2008-02-05 | Tokyo Electron Limited | Method of forming an oxide layer |
US7709391B2 (en) * | 2006-01-20 | 2010-05-04 | Applied Materials, Inc. | Methods for in-situ generation of reactive etch and growth specie in film formation processes |
JP2008047588A (ja) * | 2006-08-11 | 2008-02-28 | Matsushita Electric Ind Co Ltd | 基板処理装置および基板処理方法 |
US7976634B2 (en) | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
US7605095B2 (en) * | 2007-02-14 | 2009-10-20 | Tokyo Electron Limited | Heat processing method and apparatus for semiconductor process |
US20090061608A1 (en) * | 2007-08-29 | 2009-03-05 | Merchant Tushar P | Method of forming a semiconductor device having a silicon dioxide layer |
US7951728B2 (en) * | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
US9127340B2 (en) | 2009-02-13 | 2015-09-08 | Asm International N.V. | Selective oxidation process |
US8889565B2 (en) * | 2009-02-13 | 2014-11-18 | Asm International N.V. | Selective removal of oxygen from metal-containing materials |
TW201122148A (en) * | 2009-12-24 | 2011-07-01 | Hon Hai Prec Ind Co Ltd | Chemical vapor deposition device |
JP5371831B2 (ja) * | 2010-02-25 | 2013-12-18 | 三菱電機株式会社 | 半導体装置の製造方法 |
US9257292B2 (en) * | 2011-03-30 | 2016-02-09 | Tokyo Electron Limited | Etch system and method for single substrate processing |
US20120248061A1 (en) * | 2011-03-30 | 2012-10-04 | Tokyo Electron Limited | Increasing masking layer etch rate and selectivity |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US20150206741A1 (en) | 2014-01-17 | 2015-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for in situ steam generation |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9859298B1 (en) | 2016-06-23 | 2018-01-02 | Sandisk Technologies Llc | Amorphous silicon layer in memory device which reduces neighboring word line interference |
US20180076026A1 (en) | 2016-09-14 | 2018-03-15 | Applied Materials, Inc. | Steam oxidation initiation for high aspect ratio conformal radical oxidation |
US9768034B1 (en) * | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
TW202107528A (zh) | 2019-04-30 | 2021-02-16 | 美商得昇科技股份有限公司 | 氫氣輔助的大氣自由基氧化 |
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-
1998
- 1998-03-02 US US09/033,391 patent/US6037273A/en not_active Expired - Lifetime
- 1998-06-05 DE DE69838790.2T patent/DE69838790T3/de not_active Expired - Lifetime
- 1998-06-05 KR KR10-2000-7000308A patent/KR100396066B1/ko not_active IP Right Cessation
-
2010
- 2010-09-02 JP JP2010196956A patent/JP5762705B2/ja not_active Expired - Lifetime
-
2014
- 2014-06-12 JP JP2014121112A patent/JP5889959B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69838790T2 (de) | 2008-10-30 |
JP5889959B2 (ja) | 2016-03-22 |
JP2010268014A (ja) | 2010-11-25 |
US6037273A (en) | 2000-03-14 |
JP5762705B2 (ja) | 2015-08-12 |
DE69838790T3 (de) | 2017-09-28 |
KR20010021745A (ko) | 2001-03-15 |
JP2014209640A (ja) | 2014-11-06 |
KR100396066B1 (ko) | 2003-08-27 |
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