DE69837060T2 - Verfahren zur Messung von physikalischen Phänomenen oder chemischen Phänomenen und Vorrichtung dafür - Google Patents

Verfahren zur Messung von physikalischen Phänomenen oder chemischen Phänomenen und Vorrichtung dafür Download PDF

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Publication number
DE69837060T2
DE69837060T2 DE69837060T DE69837060T DE69837060T2 DE 69837060 T2 DE69837060 T2 DE 69837060T2 DE 69837060 T DE69837060 T DE 69837060T DE 69837060 T DE69837060 T DE 69837060T DE 69837060 T2 DE69837060 T2 DE 69837060T2
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DE
Germany
Prior art keywords
section
potential
electric charge
physical
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69837060T
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German (de)
English (en)
Other versions
DE69837060D1 (de
Inventor
Kazuaki Hamamatsu-City Sawada
Katsuhiko Tomita
Tsuyoshi Nakanishi
Hiroki Tanabe
Susumu Mimura
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Horiba Ltd
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Horiba Ltd
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Filing date
Publication date
Application filed by Horiba Ltd filed Critical Horiba Ltd
Publication of DE69837060D1 publication Critical patent/DE69837060D1/de
Application granted granted Critical
Publication of DE69837060T2 publication Critical patent/DE69837060T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/02Means for indicating or recording specially adapted for thermometers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/02Means for indicating or recording specially adapted for thermometers
    • G01K1/026Means for indicating or recording specially adapted for thermometers arrangements for monitoring a plurality of temperatures, e.g. by multiplexing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/005Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148Integrated circuits therefor, e.g. fabricated by CMOS processing

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electrochemistry (AREA)
  • Immunology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Measuring Magnetic Variables (AREA)
  • Radiation Pyrometers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
DE69837060T 1997-05-29 1998-05-28 Verfahren zur Messung von physikalischen Phänomenen oder chemischen Phänomenen und Vorrichtung dafür Expired - Fee Related DE69837060T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15771697A JP4231560B2 (ja) 1997-05-29 1997-05-29 化学量の分布の電気化学的測定方法および装置
JP15771697 1997-05-29

Publications (2)

Publication Number Publication Date
DE69837060D1 DE69837060D1 (de) 2007-03-29
DE69837060T2 true DE69837060T2 (de) 2007-11-22

Family

ID=15655821

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69837060T Expired - Fee Related DE69837060T2 (de) 1997-05-29 1998-05-28 Verfahren zur Messung von physikalischen Phänomenen oder chemischen Phänomenen und Vorrichtung dafür

Country Status (4)

Country Link
US (1) US6255678B1 (enExample)
EP (1) EP0881486B1 (enExample)
JP (1) JP4231560B2 (enExample)
DE (1) DE69837060T2 (enExample)

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TW544752B (en) * 2002-05-20 2003-08-01 Univ Nat Yunlin Sci & Tech Method for producing SnO2 gate ion sensitive field effect transistor (ISFET), and method and device for measuring the temperature parameters, drift and hysteresis values thereof
US7692219B1 (en) 2004-06-25 2010-04-06 University Of Hawaii Ultrasensitive biosensors
CN100498319C (zh) * 2004-10-20 2009-06-10 财团法人工业技术研究院 多晶硅薄膜晶体管离子感测装置与制作方法
US7785785B2 (en) 2004-11-12 2010-08-31 The Board Of Trustees Of The Leland Stanford Junior University Charge perturbation detection system for DNA and other molecules
JP4700335B2 (ja) * 2004-12-10 2011-06-15 株式会社堀場製作所 物理現象または化学現象の測定方法および測定装置
JP4678676B2 (ja) * 2004-12-10 2011-04-27 株式会社堀場製作所 物理現象または化学現象の測定方法または測定装置
KR101343044B1 (ko) * 2005-03-11 2013-12-18 고꾸리쯔 다이가꾸 호우징 도요하시 기쥬쯔 가가꾸 다이가꾸 누적형 화학·물리현상 검출장치
JP4641444B2 (ja) * 2005-03-31 2011-03-02 株式会社堀場製作所 物理現象または化学現象に係るポテンシャル測定装置
JP5335415B2 (ja) * 2006-03-20 2013-11-06 国立大学法人豊橋技術科学大学 累積型化学・物理現象検出方法及びその装置
JP4852752B2 (ja) * 2006-04-04 2012-01-11 国立大学法人豊橋技術科学大学 化学・物理現象検出装置
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
AU2007334393A1 (en) 2006-12-14 2008-06-26 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
CN102203282B (zh) 2008-06-25 2014-04-30 生命技术公司 使用大规模fet阵列测量分析物的方法和装置
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
JP2010122090A (ja) * 2008-11-20 2010-06-03 Rohm Co Ltd イオンイメージセンサ及びダメージ計測装置
CN101592627B (zh) * 2009-03-19 2012-12-05 中国科学院苏州纳米技术与纳米仿生研究所 多通道高灵敏生物传感器的制作集成方法
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8673627B2 (en) 2009-05-29 2014-03-18 Life Technologies Corporation Apparatus and methods for performing electrochemical reactions
US8574835B2 (en) 2009-05-29 2013-11-05 Life Technologies Corporation Scaffolded nucleic acid polymer particles and methods of making and using
AU2011226767B1 (en) 2010-06-30 2011-11-10 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
CN103080739B (zh) 2010-06-30 2016-12-21 生命科技公司 用于测试isfet阵列的方法和装置
US8487790B2 (en) 2010-06-30 2013-07-16 Life Technologies Corporation Chemical detection circuit including a serializer circuit
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
TWI527245B (zh) 2010-07-03 2016-03-21 生命技術公司 具有微摻雜汲極之化學感測器
EP2617061B1 (en) 2010-09-15 2021-06-30 Life Technologies Corporation Methods and apparatus for measuring analytes
US8685324B2 (en) 2010-09-24 2014-04-01 Life Technologies Corporation Matched pair transistor circuits
JP5773357B2 (ja) * 2011-07-01 2015-09-02 国立大学法人豊橋技術科学大学 化学・物理現象検出装置及び検出方法
JP2013050426A (ja) * 2011-08-31 2013-03-14 Chiba Univ Fet型センサを用いたインフルエンザウイルスrnaの検出方法
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8821798B2 (en) 2012-01-19 2014-09-02 Life Technologies Corporation Titanium nitride as sensing layer for microwell structure
US8747748B2 (en) 2012-01-19 2014-06-10 Life Technologies Corporation Chemical sensor with conductive cup-shaped sensor surface
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
WO2014025044A1 (ja) * 2012-08-10 2014-02-13 国立大学法人豊橋技術科学大学 酸化還元電位の測定装置及び測定方法
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8962366B2 (en) 2013-01-28 2015-02-24 Life Technologies Corporation Self-aligned well structures for low-noise chemical sensors
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US8841217B1 (en) 2013-03-13 2014-09-23 Life Technologies Corporation Chemical sensor with protruded sensor surface
WO2014149779A1 (en) 2013-03-15 2014-09-25 Life Technologies Corporation Chemical device with thin conductive element
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
CN105264366B (zh) 2013-03-15 2019-04-16 生命科技公司 具有一致传感器表面区域的化学传感器
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
JP6493955B2 (ja) * 2014-10-09 2019-04-03 ラピスセミコンダクタ株式会社 半導体装置及び半導体装置の製造方法
JP6228098B2 (ja) 2014-10-20 2017-11-08 シャープ株式会社 化学・物理現象検出装置及びその製造方法
EP4354131A3 (en) 2014-12-18 2024-06-26 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
KR20170097712A (ko) 2014-12-18 2017-08-28 라이프 테크놀로지스 코포레이션 대형 fet 어레이를 사용한 분석물 측정을 위한 방법과 장치
US9976981B2 (en) * 2015-01-14 2018-05-22 National University Corporation Toyohashi University Of Technology Device for detecting chemical/physical phenomenon having a diffusion layer formed between an input charge control region and a sensing region on a substrate
DE102015214387B4 (de) * 2015-07-29 2017-07-27 Robert Bosch Gmbh Sensorelement zur Erfassung mindestens einer Eigenschaft eines Messgases in einem Messgasraum und Verfahren zur Herstellung desselben
JP6307058B2 (ja) * 2015-12-03 2018-04-04 シャープ株式会社 イオン濃度センサ、およびイオン濃度測定方法
JP6447925B2 (ja) 2015-12-15 2019-01-09 シャープ株式会社 イオン濃度センサ
JP2017167064A (ja) * 2016-03-17 2017-09-21 株式会社東芝 電気化学センサ及び電気化学センサを用いた測定方法
JP2024008710A (ja) * 2022-07-08 2024-01-19 富士電機株式会社 圧力検出装置および製造方法

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Also Published As

Publication number Publication date
DE69837060D1 (de) 2007-03-29
US6255678B1 (en) 2001-07-03
JPH10332423A (ja) 1998-12-18
JP4231560B2 (ja) 2009-03-04
EP0881486A2 (en) 1998-12-02
EP0881486B1 (en) 2007-02-14
EP0881486A3 (en) 1999-10-06

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: SAWADA, KAZUAKI, HAMAMATSU-CITY, SHIZUOKA, JP

Inventor name: TOMITA, KATSUHIKO, KYOTO, JP

Inventor name: NAKANISHI, TSUYOSHI, KYOTO, JP

Inventor name: TANABE, HIROKI, KYOTO, JP

Inventor name: MIMURA, SUSUMU, KYOTO, JP

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee