DE69420898T2 - Ladungsdetektorverstärker - Google Patents

Ladungsdetektorverstärker

Info

Publication number
DE69420898T2
DE69420898T2 DE69420898T DE69420898T DE69420898T2 DE 69420898 T2 DE69420898 T2 DE 69420898T2 DE 69420898 T DE69420898 T DE 69420898T DE 69420898 T DE69420898 T DE 69420898T DE 69420898 T2 DE69420898 T2 DE 69420898T2
Authority
DE
Germany
Prior art keywords
charge detector
detector amplifier
amplifier
charge
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69420898T
Other languages
English (en)
Other versions
DE69420898D1 (de
Inventor
Jaroslav Hynecek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69420898D1 publication Critical patent/DE69420898D1/de
Publication of DE69420898T2 publication Critical patent/DE69420898T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69420898T 1993-07-01 1994-07-01 Ladungsdetektorverstärker Expired - Fee Related DE69420898T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/087,645 US5369047A (en) 1993-07-01 1993-07-01 Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors

Publications (2)

Publication Number Publication Date
DE69420898D1 DE69420898D1 (de) 1999-11-04
DE69420898T2 true DE69420898T2 (de) 2000-04-20

Family

ID=22206403

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69420898T Expired - Fee Related DE69420898T2 (de) 1993-07-01 1994-07-01 Ladungsdetektorverstärker

Country Status (3)

Country Link
US (3) US5369047A (de)
EP (1) EP0632506B1 (de)
DE (1) DE69420898T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
US5736757A (en) * 1994-07-07 1998-04-07 Massachusetts Institute Of Technology Charge-domain generation and replication devices
US5712498A (en) * 1996-08-26 1998-01-27 Massachusetts Institute Of Technology Charge modulation device
US6693670B1 (en) * 1999-07-29 2004-02-17 Vision - Sciences, Inc. Multi-photodetector unit cell
JP3595483B2 (ja) * 2000-01-27 2004-12-02 Ｎｅｃエレクトロニクス株式会社 電荷検出信号処理回路
US7336309B2 (en) * 2000-07-05 2008-02-26 Vision-Sciences Inc. Dynamic range compression method
AU2001291082A1 (en) * 2000-09-12 2002-03-26 Transchip Inc Single chip cmos image sensor system with video compression
WO2002043366A2 (en) * 2000-11-27 2002-05-30 Vision Sciences Inc. Programmable resolution cmos image sensor
JP2004530286A (ja) * 2000-11-27 2004-09-30 ビジョン−サイエンシズ・インコーポレイテッド イメージ・センサ内での雑音レベルの軽減
US6580106B2 (en) 2001-01-12 2003-06-17 Isetex. Inc CMOS image sensor with complete pixel reset without kTC noise generation
GB2375133B (en) * 2001-04-17 2004-09-15 David Vincent Byrne A trench cover
JP3734717B2 (ja) * 2001-04-26 2006-01-11 富士通株式会社 イメージセンサ
US7211779B2 (en) * 2001-08-14 2007-05-01 Transchip, Inc. Pixel sensor with charge evacuation element and systems and methods for using such
US7791641B2 (en) * 2001-09-12 2010-09-07 Samsung Electronics Co., Ltd. Systems and methods for utilizing activity detection information in relation to image processing
US6625246B1 (en) * 2002-04-12 2003-09-23 Holtec International, Inc. System and method for transferring spent nuclear fuel from a spent nuclear fuel pool to a storage cask
US7141841B2 (en) * 2003-07-03 2006-11-28 Micron Technology, Inc. Image sensor having a transistor for allowing increased dynamic range
US20070263127A1 (en) * 2006-03-07 2007-11-15 Transchip, Inc. Low Noise Gamma Function In Digital Image Capture Systems And Methods
US7868928B2 (en) 2006-03-15 2011-01-11 Samsung Electronics Co., Ltd. Low noise color correction matrix function in digital image capture systems and methods
US9367711B1 (en) * 2008-09-04 2016-06-14 Intelleflex Corporation Battery assisted RFID tag with square-law receiver and optional part time active behavior
US8946845B1 (en) * 2011-02-02 2015-02-03 Aptina Imaging Corporation Stacked pixels for high resolution CMOS image sensors with BCMD charge detectors
US10512794B2 (en) 2016-12-16 2019-12-24 Brainsonix Corporation Stereotactic frame
US9061133B2 (en) 2012-12-27 2015-06-23 Brainsonix Corporation Focused ultrasonic transducer navigation system
US10974078B2 (en) 2012-12-27 2021-04-13 Brainsonix Corporation Treating degenerative dementia with low intensity focused ultrasound pulsation (LIFUP) device
US11759661B2 (en) 2020-05-20 2023-09-19 Brainsonix Corporation Ultrasonic transducer treatment device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032952A (en) * 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
GB1548877A (en) * 1975-06-26 1979-07-18 Mullard Ltd Semiconductor devices
US4090095A (en) * 1976-02-17 1978-05-16 Rca Corporation Charge coupled device with diode reset for floating gate output
US4229752A (en) * 1978-05-16 1980-10-21 Texas Instruments Incorporated Virtual phase charge transfer device
JPS61131854U (de) * 1985-02-06 1986-08-18
US4668971A (en) * 1985-08-27 1987-05-26 Texas Instruments Incorporated CCD imager with JFET peripherals
US4901129A (en) * 1987-04-10 1990-02-13 Texas Instruments Incorporated Bulk charge modulated transistor threshold image sensor elements and method of making
NL8701528A (nl) * 1987-06-30 1989-01-16 Philips Nv Halfgeleiderinrichting voozien van een ladingsoverdrachtinrichting.
JP2666928B2 (ja) * 1987-07-13 1997-10-22 株式会社東芝 電荷転送素子の出力検出器
US5101174A (en) * 1990-10-31 1992-03-31 Texas Instruments Incorporated Advanced charge detection amplifier for high performance image sensors
US5235197A (en) * 1991-06-25 1993-08-10 Dalsa, Inc. High photosensitivity and high speed wide dynamic range ccd image sensor
US5151380A (en) * 1991-08-19 1992-09-29 Texas Instruments Incorporated Method of making top buss virtual phase frame interline transfer CCD image sensor
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5357128A (en) * 1993-08-27 1994-10-18 Goldstar Electron Co., Ltd. Charge detecting device
US7169885B2 (en) * 2003-03-13 2007-01-30 National University Of Singapore Polyimide membranes

Also Published As

Publication number Publication date
US5369047A (en) 1994-11-29
EP0632506B1 (de) 1999-09-29
EP0632506A1 (de) 1995-01-04
US6243434B1 (en) 2001-06-05
US5546438A (en) 1996-08-13
DE69420898D1 (de) 1999-11-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee