DE69208213T2 - Ladungsübertragungsanordnung mit einem Übergangstyp-Ausgangstransistor - Google Patents

Ladungsübertragungsanordnung mit einem Übergangstyp-Ausgangstransistor

Info

Publication number
DE69208213T2
DE69208213T2 DE69208213T DE69208213T DE69208213T2 DE 69208213 T2 DE69208213 T2 DE 69208213T2 DE 69208213 T DE69208213 T DE 69208213T DE 69208213 T DE69208213 T DE 69208213T DE 69208213 T2 DE69208213 T2 DE 69208213T2
Authority
DE
Germany
Prior art keywords
transfer device
charge transfer
output transistor
junction type
type output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69208213T
Other languages
English (en)
Other versions
DE69208213D1 (de
Inventor
Kazuo Miwada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69208213D1 publication Critical patent/DE69208213D1/de
Publication of DE69208213T2 publication Critical patent/DE69208213T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69208213T 1991-11-11 1992-10-28 Ladungsübertragungsanordnung mit einem Übergangstyp-Ausgangstransistor Expired - Fee Related DE69208213T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3294660A JP3036175B2 (ja) 1991-11-11 1991-11-11 電荷転送装置

Publications (2)

Publication Number Publication Date
DE69208213D1 DE69208213D1 (de) 1996-03-21
DE69208213T2 true DE69208213T2 (de) 1996-07-25

Family

ID=17810650

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69208213T Expired - Fee Related DE69208213T2 (de) 1991-11-11 1992-10-28 Ladungsübertragungsanordnung mit einem Übergangstyp-Ausgangstransistor

Country Status (4)

Country Link
US (1) US5223725A (de)
EP (1) EP0542448B1 (de)
JP (1) JP3036175B2 (de)
DE (1) DE69208213T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182623A (en) * 1989-11-13 1993-01-26 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
JP2626497B2 (ja) * 1993-08-26 1997-07-02 日本電気株式会社 電荷転送素子
US5357128A (en) * 1993-08-27 1994-10-18 Goldstar Electron Co., Ltd. Charge detecting device
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
EP0719456B1 (de) * 1994-06-23 1999-09-29 Koninklijke Philips Electronics N.V. Ladungsgekoppelte anordnung und bildaufnahmevorrichtung die diese ladungsgekoppelte anordnung enthält
JP2001238134A (ja) * 2000-02-23 2001-08-31 Sony Corp 固体撮像素子およびその駆動方法並びにカメラシステム
JP4237595B2 (ja) * 2003-09-24 2009-03-11 株式会社東芝 スタティックランダムアクセスメモリ
DE102004018153B9 (de) 2004-04-08 2012-08-23 Austriamicrosystems Ag Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung
US20080007622A1 (en) * 2006-06-08 2008-01-10 Eastman Kodak Company Method of improving solid-state image sensor sensitivity
JP2008282879A (ja) * 2007-05-08 2008-11-20 Rohm Co Ltd 半導体装置およびその製造方法
DE102011079589A1 (de) * 2010-08-11 2012-02-16 Samsung Electronics Co., Ltd. Einheitspixel für ein Photodetektionsbauelement
JP2015109422A (ja) * 2013-10-22 2015-06-11 株式会社半導体エネルギー研究所 半導体装置の評価方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
GB1548877A (en) * 1975-06-26 1979-07-18 Mullard Ltd Semiconductor devices
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
JPS58220574A (ja) * 1982-06-17 1983-12-22 Olympus Optical Co Ltd 固体撮像装置
JPS62211961A (ja) * 1986-03-13 1987-09-17 Fujitsu Ltd 化合物半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP0542448A2 (de) 1993-05-19
DE69208213D1 (de) 1996-03-21
US5223725A (en) 1993-06-29
JP3036175B2 (ja) 2000-04-24
JPH05182993A (ja) 1993-07-23
EP0542448A3 (en) 1993-09-08
EP0542448B1 (de) 1996-02-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee