DE3510965C2 - - Google Patents

Info

Publication number
DE3510965C2
DE3510965C2 DE3510965A DE3510965A DE3510965C2 DE 3510965 C2 DE3510965 C2 DE 3510965C2 DE 3510965 A DE3510965 A DE 3510965A DE 3510965 A DE3510965 A DE 3510965A DE 3510965 C2 DE3510965 C2 DE 3510965C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3510965A
Other versions
DE3510965A1 (de
Inventor
Kazuya Ina Nagano Jp Matsumoto
Tsutomu Nagano Jp Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Publication of DE3510965A1 publication Critical patent/DE3510965A1/de
Application granted granted Critical
Publication of DE3510965C2 publication Critical patent/DE3510965C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
DE19853510965 1984-03-29 1985-03-26 Bildelement fuer einen festkoerper-bildsensor Granted DE3510965A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59059525A JPH0666446B2 (ja) 1984-03-29 1984-03-29 固体撮像素子

Publications (2)

Publication Number Publication Date
DE3510965A1 DE3510965A1 (de) 1985-10-03
DE3510965C2 true DE3510965C2 (de) 1987-01-02

Family

ID=13115768

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3546487A Expired DE3546487C2 (de) 1984-03-29 1985-03-26
DE19853510965 Granted DE3510965A1 (de) 1984-03-29 1985-03-26 Bildelement fuer einen festkoerper-bildsensor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE3546487A Expired DE3546487C2 (de) 1984-03-29 1985-03-26

Country Status (4)

Country Link
US (1) US4878120A (de)
JP (1) JPH0666446B2 (de)
DE (2) DE3546487C2 (de)
FR (1) FR2563657B1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60229368A (ja) * 1984-04-27 1985-11-14 Olympus Optical Co Ltd 固体撮像装置
JPS61136388A (ja) * 1984-11-21 1986-06-24 Olympus Optical Co Ltd 固体撮像装置
JPH0682816B2 (ja) * 1985-05-20 1994-10-19 松下電子工業株式会社 固体撮像装置
JPS6312161A (ja) * 1986-07-03 1988-01-19 Olympus Optical Co Ltd 半導体撮像装置
JPH01133493A (ja) * 1987-11-19 1989-05-25 Olympus Optical Co Ltd 固体撮像装置
US4951106A (en) * 1988-03-24 1990-08-21 Tektronix, Inc. Detector device for measuring the intensity of electromagnetic radiation
US5061918A (en) * 1989-10-02 1991-10-29 The Texas A&M University System Sound emitting device for behavior modification
US5502488A (en) * 1991-05-07 1996-03-26 Olympus Optical Co., Ltd. Solid-state imaging device having a low impedance structure
US5307169A (en) * 1991-05-07 1994-04-26 Olympus Optical Co., Ltd. Solid-state imaging device using high relative dielectric constant material as insulating film
US5486711A (en) * 1993-06-25 1996-01-23 Nikon Corporation Solid-state image sensor with overlapping split gate electrodes
DE4321789C2 (de) * 1993-06-30 1999-12-09 Siemens Ag Festkörperbildwandler
US6072528A (en) * 1993-09-13 2000-06-06 Olympus Optical Co., Ltd. Solid state image sensor
DE4331391A1 (de) * 1993-09-15 1995-03-16 Josef Dr Kemmer Halbleiter(detektor)struktur
DE4331392A1 (de) * 1993-09-15 1995-03-16 Josef Dr Kemmer Unipolartransistor mit integrierter Rücksetzstruktur
US5578814A (en) * 1993-09-29 1996-11-26 Intronix, Inc. Sensor device for storing electromagnetic radiation and for transforming such into electric signals
US5428216A (en) * 1993-09-29 1995-06-27 Ornetics International, Inc. Opto-electronic sensor device using a transparent injecting electrode to block outside radiation
US6873362B1 (en) * 1995-03-22 2005-03-29 Sony Corporation Scanning switch transistor for solid-state imaging device
JPH08313215A (ja) * 1995-05-23 1996-11-29 Olympus Optical Co Ltd ２次元距離センサ
JPH09102609A (ja) * 1995-08-03 1997-04-15 Seiko Instr Inc 半導体装置
DE19631385A1 (de) * 1996-08-02 1998-02-05 Siemens Ag Festkörper-Bildwandler
US6051857A (en) 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
TW494574B (en) 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6545331B1 (en) 1999-12-10 2003-04-08 Innotech Corporation Solid state imaging device, manufacturing method thereof, and solid state imaging apparatus
US6950134B2 (en) 2000-02-22 2005-09-27 Innotech Corporation Method of preventing transfer and storage of non-optically generated charges in solid state imaging device
US6448596B1 (en) 2000-08-15 2002-09-10 Innotech Corporation Solid-state imaging device
JP3554703B2 (ja) * 2000-10-12 2004-08-18 リバーベル株式会社 情報端末装置
GB2374200A (en) * 2000-12-21 2002-10-09 Europ Org For Nuclear Research Radiation tolerant MOS layout
JP4109858B2 (ja) * 2001-11-13 2008-07-02 株式会社東芝 固体撮像装置
JP3900992B2 (ja) * 2002-04-02 2007-04-04 株式会社日立製作所 放射線検出器及び放射線検査装置
US20050023570A1 (en) * 2003-07-29 2005-02-03 Eastman Kodak Company Image sensor with transparent transistor gates
JP4744807B2 (ja) * 2004-01-06 2011-08-10 パナソニック株式会社 半導体集積回路装置
US7193257B2 (en) 2004-01-29 2007-03-20 Victor Company Of Japan, Ltd. Solid state image sensing device and manufacturing and driving methods thereof
JP4187691B2 (ja) * 2004-06-29 2008-11-26 富士通マイクロエレクトロニクス株式会社 閾値変調型イメージセンサ
JP4655785B2 (ja) * 2005-07-06 2011-03-23 日本ビクター株式会社 固体撮像素子の駆動方法
US7262400B2 (en) * 2005-12-02 2007-08-28 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device having an active layer overlying a substrate and an isolating region in the active layer
WO2007094493A1 (ja) * 2006-02-14 2007-08-23 National Institute Of Advanced Industrial Science And Technology 光電界効果トランジスタ、及びそれを用いた集積型フォトディテクタ
KR100889483B1 (ko) * 2006-10-20 2009-03-19 한국전자통신연구원 저전압 동작 특성 향상을 위한 이미지 센서
JP5167799B2 (ja) 2007-12-18 2013-03-21 ソニー株式会社 固体撮像装置およびカメラ
CN103189983B (zh) * 2008-07-17 2016-10-26 微软国际控股私有有限公司 具有改善的电荷检出单元和像素几何结构的cmos光栅3d照相机系统
US10529753B2 (en) 2015-11-03 2020-01-07 Sensors Unlimited, Inc. Pixels
EP3602109B1 (de) 2017-03-19 2021-01-20 Kovilta Oy Systeme und verfahren zur modulierten bildaufnahme

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941351B2 (ja) * 1976-09-13 1984-10-06 株式会社日立製作所 カラ−用固体撮像素子
US4326210A (en) * 1977-09-26 1982-04-20 Sharp Kabushiki Kaisha Light-responsive field effect mode semiconductor devices
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
JPS55124259A (en) * 1979-03-19 1980-09-25 Semiconductor Res Found Semiconductor device
US4571626A (en) * 1981-09-17 1986-02-18 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus
JPS58105672A (ja) * 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59107578A (ja) * 1982-12-11 1984-06-21 Junichi Nishizawa 半導体光電変換装置
JPS59107570A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 半導体撮像装置
JPH0744661B2 (ja) * 1982-12-14 1995-05-15 オリンパス光学工業株式会社 固体撮像装置
JPS59108461A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
JPS59148473A (ja) * 1983-02-14 1984-08-25 Junichi Nishizawa ２次元固体撮像装置の読出し方法
JPS59153381A (ja) * 1983-02-22 1984-09-01 Junichi Nishizawa ２次元固体撮像装置
JPS59188278A (ja) * 1983-04-08 1984-10-25 Hamamatsu Photonics Kk 半導体撮像装置
JPS6058781A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 固体撮像装置
JPS60140752A (ja) * 1983-12-28 1985-07-25 Olympus Optical Co Ltd 半導体光電変換装置
JPS614376A (ja) * 1984-06-19 1986-01-10 Olympus Optical Co Ltd 固体撮像装置

Also Published As

Publication number Publication date
FR2563657B1 (fr) 1988-02-05
JPH0666446B2 (ja) 1994-08-24
US4878120A (en) 1989-10-31
DE3510965A1 (de) 1985-10-03
FR2563657A1 (fr) 1985-10-31
DE3546487C2 (de) 1988-09-15
JPS60206063A (ja) 1985-10-17
DE3546487A1 (de) 1986-09-18

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