DE3546487A1 - - Google Patents
Info
- Publication number
- DE3546487A1 DE3546487A1 DE19853546487 DE3546487A DE3546487A1 DE 3546487 A1 DE3546487 A1 DE 3546487A1 DE 19853546487 DE19853546487 DE 19853546487 DE 3546487 A DE3546487 A DE 3546487A DE 3546487 A1 DE3546487 A1 DE 3546487A1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59059525A JPH0666446B2 (ja) | 1984-03-29 | 1984-03-29 | 固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3546487A1 true DE3546487A1 (de) | 1986-09-18 |
DE3546487C2 DE3546487C2 (de) | 1988-09-15 |
Family
ID=13115768
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3546487A Expired DE3546487C2 (de) | 1984-03-29 | 1985-03-26 | |
DE3510965A Expired DE3510965C2 (de) | 1984-03-29 | 1985-03-26 | Bildelement für einen Festkörper-Bildsensor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3510965A Expired DE3510965C2 (de) | 1984-03-29 | 1985-03-26 | Bildelement für einen Festkörper-Bildsensor |
Country Status (4)
Country | Link |
---|---|
US (1) | US4878120A (de) |
JP (1) | JPH0666446B2 (de) |
DE (2) | DE3546487C2 (de) |
FR (1) | FR2563657B1 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60229368A (ja) * | 1984-04-27 | 1985-11-14 | Olympus Optical Co Ltd | 固体撮像装置 |
JPS61136388A (ja) * | 1984-11-21 | 1986-06-24 | Olympus Optical Co Ltd | 固体撮像装置 |
JPH0682816B2 (ja) * | 1985-05-20 | 1994-10-19 | 松下電子工業株式会社 | 固体撮像装置 |
JPS6312161A (ja) * | 1986-07-03 | 1988-01-19 | Olympus Optical Co Ltd | 半導体撮像装置 |
JPH01133493A (ja) * | 1987-11-19 | 1989-05-25 | Olympus Optical Co Ltd | 固体撮像装置 |
US4951106A (en) * | 1988-03-24 | 1990-08-21 | Tektronix, Inc. | Detector device for measuring the intensity of electromagnetic radiation |
US5061918A (en) * | 1989-10-02 | 1991-10-29 | The Texas A&M University System | Sound emitting device for behavior modification |
US5502488A (en) * | 1991-05-07 | 1996-03-26 | Olympus Optical Co., Ltd. | Solid-state imaging device having a low impedance structure |
US5307169A (en) * | 1991-05-07 | 1994-04-26 | Olympus Optical Co., Ltd. | Solid-state imaging device using high relative dielectric constant material as insulating film |
US5486711A (en) * | 1993-06-25 | 1996-01-23 | Nikon Corporation | Solid-state image sensor with overlapping split gate electrodes |
DE4321789C2 (de) * | 1993-06-30 | 1999-12-09 | Siemens Ag | Festkörperbildwandler |
US6072528A (en) * | 1993-09-13 | 2000-06-06 | Olympus Optical Co., Ltd. | Solid state image sensor |
DE4331391A1 (de) * | 1993-09-15 | 1995-03-16 | Josef Dr Kemmer | Halbleiter(detektor)struktur |
DE4331392A1 (de) * | 1993-09-15 | 1995-03-16 | Josef Dr Kemmer | Unipolartransistor mit integrierter Rücksetzstruktur |
US5578814A (en) * | 1993-09-29 | 1996-11-26 | Intronix, Inc. | Sensor device for storing electromagnetic radiation and for transforming such into electric signals |
US5428216A (en) * | 1993-09-29 | 1995-06-27 | Ornetics International, Inc. | Opto-electronic sensor device using a transparent injecting electrode to block outside radiation |
US6873362B1 (en) * | 1995-03-22 | 2005-03-29 | Sony Corporation | Scanning switch transistor for solid-state imaging device |
JPH08313215A (ja) * | 1995-05-23 | 1996-11-29 | Olympus Optical Co Ltd | 2次元距離センサ |
JPH09102609A (ja) * | 1995-08-03 | 1997-04-15 | Seiko Instr Inc | 半導体装置 |
DE19631385A1 (de) * | 1996-08-02 | 1998-02-05 | Siemens Ag | Festkörper-Bildwandler |
US6051857A (en) | 1998-01-07 | 2000-04-18 | Innovision, Inc. | Solid-state imaging device and method of detecting optical signals using the same |
TW494574B (en) | 1999-12-01 | 2002-07-11 | Innotech Corp | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
US6545331B1 (en) | 1999-12-10 | 2003-04-08 | Innotech Corporation | Solid state imaging device, manufacturing method thereof, and solid state imaging apparatus |
US6950134B2 (en) | 2000-02-22 | 2005-09-27 | Innotech Corporation | Method of preventing transfer and storage of non-optically generated charges in solid state imaging device |
US6448596B1 (en) | 2000-08-15 | 2002-09-10 | Innotech Corporation | Solid-state imaging device |
JP3554703B2 (ja) * | 2000-10-12 | 2004-08-18 | リバーベル株式会社 | 情報端末装置 |
GB2374200A (en) * | 2000-12-21 | 2002-10-09 | Europ Org For Nuclear Research | Radiation tolerant MOS layout |
JP4109858B2 (ja) * | 2001-11-13 | 2008-07-02 | 株式会社東芝 | 固体撮像装置 |
JP3900992B2 (ja) * | 2002-04-02 | 2007-04-04 | 株式会社日立製作所 | 放射線検出器及び放射線検査装置 |
US20050023570A1 (en) * | 2003-07-29 | 2005-02-03 | Eastman Kodak Company | Image sensor with transparent transistor gates |
JP4744807B2 (ja) * | 2004-01-06 | 2011-08-10 | パナソニック株式会社 | 半導体集積回路装置 |
US7193257B2 (en) | 2004-01-29 | 2007-03-20 | Victor Company Of Japan, Ltd. | Solid state image sensing device and manufacturing and driving methods thereof |
JP4187691B2 (ja) * | 2004-06-29 | 2008-11-26 | 富士通マイクロエレクトロニクス株式会社 | 閾値変調型イメージセンサ |
JP4655785B2 (ja) * | 2005-07-06 | 2011-03-23 | 日本ビクター株式会社 | 固体撮像素子の駆動方法 |
US7262400B2 (en) * | 2005-12-02 | 2007-08-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device having an active layer overlying a substrate and an isolating region in the active layer |
WO2007094493A1 (ja) * | 2006-02-14 | 2007-08-23 | National Institute Of Advanced Industrial Science And Technology | 光電界効果トランジスタ、及びそれを用いた集積型フォトディテクタ |
KR100889483B1 (ko) * | 2006-10-20 | 2009-03-19 | 한국전자통신연구원 | 저전압 동작 특성 향상을 위한 이미지 센서 |
JP5167799B2 (ja) | 2007-12-18 | 2013-03-21 | ソニー株式会社 | 固体撮像装置およびカメラ |
EP2304795A1 (de) * | 2008-07-17 | 2011-04-06 | Microsoft International Holdings B.V. | 3d-cmos-photogate-kamerasystem mit verbesserter lastmesszelle und pixelgeometrie |
US10529753B2 (en) | 2015-11-03 | 2020-01-07 | Sensors Unlimited, Inc. | Pixels |
WO2018172610A1 (en) | 2017-03-19 | 2018-09-27 | Kovilta Oy | Systems and methods for modulated image capture |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0096725A1 (de) * | 1981-12-17 | 1983-12-28 | NISHIZAWA, Junichi | Halbleiterbildaufnahmevorrichtung |
DE3446972A1 (de) * | 1983-12-28 | 1985-07-18 | Olympus Optical Co., Ltd., Tokio/Tokyo | Photoelektrischer halbleiter-wandler |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5941351B2 (ja) * | 1976-09-13 | 1984-10-06 | 株式会社日立製作所 | カラ−用固体撮像素子 |
US4326210A (en) * | 1977-09-26 | 1982-04-20 | Sharp Kabushiki Kaisha | Light-responsive field effect mode semiconductor devices |
JPS5850030B2 (ja) * | 1979-03-08 | 1983-11-08 | 日本放送協会 | 光電変換装置およびそれを用いた固体撮像板 |
JPS55124259A (en) * | 1979-03-19 | 1980-09-25 | Semiconductor Res Found | Semiconductor device |
US4571626A (en) * | 1981-09-17 | 1986-02-18 | Matsushita Electric Industrial Co., Ltd. | Solid state area imaging apparatus |
JPS59107578A (ja) * | 1982-12-11 | 1984-06-21 | Junichi Nishizawa | 半導体光電変換装置 |
JPS59107570A (ja) * | 1982-12-13 | 1984-06-21 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
JPH0744661B2 (ja) * | 1982-12-14 | 1995-05-15 | オリンパス光学工業株式会社 | 固体撮像装置 |
JPS59108461A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像装置 |
JPS59148473A (ja) * | 1983-02-14 | 1984-08-25 | Junichi Nishizawa | 2次元固体撮像装置の読出し方法 |
JPS59153381A (ja) * | 1983-02-22 | 1984-09-01 | Junichi Nishizawa | 2次元固体撮像装置 |
JPS59188278A (ja) * | 1983-04-08 | 1984-10-25 | Hamamatsu Photonics Kk | 半導体撮像装置 |
JPS6058781A (ja) * | 1983-09-09 | 1985-04-04 | Olympus Optical Co Ltd | 固体撮像装置 |
JPS614376A (ja) * | 1984-06-19 | 1986-01-10 | Olympus Optical Co Ltd | 固体撮像装置 |
-
1984
- 1984-03-29 JP JP59059525A patent/JPH0666446B2/ja not_active Expired - Lifetime
-
1985
- 1985-03-25 US US06/715,641 patent/US4878120A/en not_active Expired - Lifetime
- 1985-03-26 DE DE3546487A patent/DE3546487C2/de not_active Expired
- 1985-03-26 DE DE3510965A patent/DE3510965C2/de not_active Expired
- 1985-03-28 FR FR8504687A patent/FR2563657B1/fr not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0096725A1 (de) * | 1981-12-17 | 1983-12-28 | NISHIZAWA, Junichi | Halbleiterbildaufnahmevorrichtung |
DE3446972A1 (de) * | 1983-12-28 | 1985-07-18 | Olympus Optical Co., Ltd., Tokio/Tokyo | Photoelektrischer halbleiter-wandler |
Also Published As
Publication number | Publication date |
---|---|
JPH0666446B2 (ja) | 1994-08-24 |
JPS60206063A (ja) | 1985-10-17 |
DE3546487C2 (de) | 1988-09-15 |
DE3510965A1 (de) | 1985-10-03 |
US4878120A (en) | 1989-10-31 |
FR2563657B1 (fr) | 1988-02-05 |
FR2563657A1 (fr) | 1985-10-31 |
DE3510965C2 (de) | 1987-01-02 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
Q172 | Divided out of (supplement): |
Ref country code: DE Ref document number: 3510965 |
|
8110 | Request for examination paragraph 44 | ||
AC | Divided out of |
Ref country code: DE Ref document number: 3510965 Format of ref document f/p: P |
|
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |