DE69836940D1 - Temperaturabhängiger Konstantstromschaltkreis und eine diesen verwendende Treiberschaltung für lichtemittierende Halbleiterelemente - Google Patents

Temperaturabhängiger Konstantstromschaltkreis und eine diesen verwendende Treiberschaltung für lichtemittierende Halbleiterelemente

Info

Publication number
DE69836940D1
DE69836940D1 DE69836940T DE69836940T DE69836940D1 DE 69836940 D1 DE69836940 D1 DE 69836940D1 DE 69836940 T DE69836940 T DE 69836940T DE 69836940 T DE69836940 T DE 69836940T DE 69836940 D1 DE69836940 D1 DE 69836940D1
Authority
DE
Germany
Prior art keywords
temperature
same
semiconductor light
emitting elements
dependent constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69836940T
Other languages
English (en)
Other versions
DE69836940T2 (de
Inventor
Katsuji Kaminishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69836940D1 publication Critical patent/DE69836940D1/de
Application granted granted Critical
Publication of DE69836940T2 publication Critical patent/DE69836940T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/503—Laser transmitters
    • H04B10/504—Laser transmitters using direct modulation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/58—Compensation for non-linear transmitter output

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Optical Communication System (AREA)
  • Semiconductor Lasers (AREA)
DE69836940T 1997-07-31 1998-07-31 Temperaturabhängiger Konstantstromschaltkreis und eine diesen verwendende Treiberschaltung für lichtemittierende Halbleiterelemente Expired - Lifetime DE69836940T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP20681497 1997-07-31
JP20681497 1997-07-31
JP04210998A JP4116133B2 (ja) 1997-07-31 1998-02-24 温度依存型定電流発生回路およびこれを用いた光半導体素子の駆動回路
JP4210998 1998-02-24

Publications (2)

Publication Number Publication Date
DE69836940D1 true DE69836940D1 (de) 2007-03-15
DE69836940T2 DE69836940T2 (de) 2007-10-31

Family

ID=26381755

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69836940T Expired - Lifetime DE69836940T2 (de) 1997-07-31 1998-07-31 Temperaturabhängiger Konstantstromschaltkreis und eine diesen verwendende Treiberschaltung für lichtemittierende Halbleiterelemente

Country Status (4)

Country Link
US (1) US6037832A (de)
EP (1) EP0895325B1 (de)
JP (1) JP4116133B2 (de)
DE (1) DE69836940T2 (de)

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JP3668612B2 (ja) 1998-06-29 2005-07-06 株式会社東芝 光半導体素子駆動回路及び光送受信モジュール
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JP3660846B2 (ja) * 2000-02-23 2005-06-15 日本無線株式会社 Ｆｅｔバイアス回路
JP2001326569A (ja) 2000-05-16 2001-11-22 Toshiba Corp Ｌｅｄ駆動回路及び光送信モジュール
JP2001352125A (ja) * 2000-06-07 2001-12-21 Matsushita Electric Ind Co Ltd Ａｐｃ方式レーザダイオード駆動回路
US6728494B2 (en) * 2000-06-08 2004-04-27 Matsushita Electric Industrial Co., Ltd. Light-emitting device drive circuit, and optical transmission system using the circuit
JP4493169B2 (ja) * 2000-07-04 2010-06-30 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3508704B2 (ja) * 2000-07-26 2004-03-22 日本電気株式会社 光送信回路
US6351137B1 (en) * 2000-08-15 2002-02-26 Pulsecore, Inc. Impedance emulator
JP3769180B2 (ja) 2000-09-26 2006-04-19 株式会社東芝 発光ダイオード駆動回路およびそれを用いた光送信モジュール
US6531857B2 (en) * 2000-11-09 2003-03-11 Agere Systems, Inc. Low voltage bandgap reference circuit
JP4620289B2 (ja) * 2001-06-15 2011-01-26 旭化成エレクトロニクス株式会社 高速電流スイッチ回路
US6774715B2 (en) 2001-06-29 2004-08-10 Xanoptix Inc. BiCMOS AC filter circuit
US7831151B2 (en) * 2001-06-29 2010-11-09 John Trezza Redundant optical device array
AU2002320455A1 (en) * 2001-06-29 2003-06-30 Xanoptix, Inc. Bicmos ac filter circuit
JP3696145B2 (ja) * 2001-10-25 2005-09-14 株式会社東芝 温度依存型定電流発生回路
US7248611B2 (en) * 2001-10-31 2007-07-24 William Marsh Rice University Frequency scanning pulsed laser having synchronously set subthreshold current
US6778569B2 (en) * 2001-11-15 2004-08-17 Agere Systems Inc. Optical source driver with improved input stage
JP2003163412A (ja) * 2001-11-28 2003-06-06 Sharp Corp 窒化物半導体レーザ装置及び半導体光学装置
US6614305B1 (en) * 2002-02-19 2003-09-02 Texas Instruments Incorporated Method and circuit for trimming offset and temperature drift for operational amplifiers and voltage references
TW529186B (en) * 2002-04-12 2003-04-21 Ind Tech Res Inst Light-emitting device driving circuit
US6760353B2 (en) * 2002-07-30 2004-07-06 Broadcom Corporation Jitter suppression techniques for laser driver circuits
WO2004079472A1 (ja) * 2003-03-06 2004-09-16 Fujitsu Limited 定電流駆動回路
JP2005019512A (ja) * 2003-06-24 2005-01-20 Toshiba Corp 光送信機
JP4170963B2 (ja) * 2004-07-22 2008-10-22 浜松ホトニクス株式会社 Ｌｅｄ駆動回路
US7405552B2 (en) 2006-01-04 2008-07-29 Micron Technology, Inc. Semiconductor temperature sensor with high sensitivity
US7821321B2 (en) * 2006-01-12 2010-10-26 Micron Technology, Inc. Semiconductor temperature sensor using bandgap generator circuit
DE602006009476D1 (de) * 2006-02-28 2009-11-12 St Microelectronics Srl Vorrichtung und Verfahren zur Erzeugung gesteuerten Stroms und zur Unterdrückung seiner Störungen
JP4899617B2 (ja) * 2006-04-28 2012-03-21 オムロン株式会社 光伝送システム、光伝送モジュール、電子機器
JP4895678B2 (ja) * 2006-05-22 2012-03-14 株式会社デンソー 集積回路装置
US7686508B2 (en) * 2006-10-21 2010-03-30 Intersil Americas Inc. CMOS temperature-to-digital converter with digital correction
US7869775B2 (en) 2006-10-30 2011-01-11 Skyworks Solutions, Inc. Circuit and method for biasing a gallium arsenide (GaAs) power amplifier
US7459961B2 (en) * 2006-10-31 2008-12-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Voltage supply insensitive bias circuits
CN101241378B (zh) * 2007-02-07 2010-08-18 中国科学院半导体研究所 输出可调节带隙基准源电路
CN100545779C (zh) * 2007-04-18 2009-09-30 中国科学院半导体研究所 高电压偏置pmos电流源电路
US7880459B2 (en) * 2007-05-11 2011-02-01 Intersil Americas Inc. Circuits and methods to produce a VPTAT and/or a bandgap voltage
KR100854463B1 (ko) * 2007-05-21 2008-08-27 주식회사 하이닉스반도체 온도센서회로 및 이를 이용한 반도체 메모리 장치
US7863882B2 (en) * 2007-11-12 2011-01-04 Intersil Americas Inc. Bandgap voltage reference circuits and methods for producing bandgap voltages
JP5144559B2 (ja) * 2008-08-29 2013-02-13 セイコーインスツル株式会社 ２端子型半導体温度センサ
US8948607B2 (en) * 2008-10-09 2015-02-03 Finisar Corporation Active linear amplifier inside transmitter module
JP5107272B2 (ja) * 2009-01-15 2012-12-26 株式会社東芝 温度補償回路
DE102009003632B4 (de) 2009-03-17 2013-05-16 Lear Corporation Gmbh Verfahren und Schaltungsanordnung zur Ansteuerung einer Last
US8330445B2 (en) * 2009-10-08 2012-12-11 Intersil Americas Inc. Circuits and methods to produce a VPTAT and/or a bandgap voltage with low-glitch preconditioning
US8446140B2 (en) * 2009-11-30 2013-05-21 Intersil Americas Inc. Circuits and methods to produce a bandgap voltage with low-drift
US8278905B2 (en) * 2009-12-02 2012-10-02 Intersil Americas Inc. Rotating gain resistors to produce a bandgap voltage with low-drift
US9035641B1 (en) * 2011-06-06 2015-05-19 Altera Corporation Startup circuit
CN102681586B (zh) * 2012-06-11 2015-08-19 上海华虹宏力半导体制造有限公司 具有上电保护功能的电压调节器
RU2589448C1 (ru) * 2015-05-28 2016-07-10 Акционерное общество "Конструкторское бюро приборостроения им. академика А.Г. Шипунова" Способ установки излучения излучателя полупроводникового лазера и устройство установки излучения излучателя полупроводникового лазера (варианты)
WO2017118455A1 (de) * 2016-01-04 2017-07-13 Silicon Line Gmbh Schaltungsanordnung und verfahren zum steuern und messen eines stroms in einem lastelement
TWI739796B (zh) * 2016-02-12 2021-09-21 日商半導體能源硏究所股份有限公司 半導體裝置及電子裝置及半導體晶圓
US10277136B2 (en) * 2016-12-01 2019-04-30 Power Integrations, Inc. Controller for multi-output single magnetic component converter with independent regulation of constant current and constant voltage outputs
US9876328B1 (en) * 2017-01-30 2018-01-23 Infineon Technologies Ag Driving light emitting elements with reduced voltage drivers
WO2019165575A1 (zh) * 2018-02-27 2019-09-06 深圳市汇顶科技股份有限公司 图像传感器和图像传感器的输出补偿电路
US11271566B2 (en) * 2018-12-14 2022-03-08 Integrated Device Technology, Inc. Digital logic compatible inputs in compound semiconductor circuits
CN110275563B (zh) * 2019-07-12 2023-09-29 苏州锴威特半导体股份有限公司 一种带温度补偿的电流偏置电路
US11381205B2 (en) * 2019-09-25 2022-07-05 Semiconductor Components Industries, Llc Potentiostat circuit

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JPH03214935A (ja) * 1990-01-19 1991-09-20 Sumitomo Electric Ind Ltd レーザダイオード駆動回路
JP3058935B2 (ja) * 1991-04-26 2000-07-04 株式会社東芝 基準電流発生回路
US5394419A (en) * 1991-07-24 1995-02-28 Siemens Aktiengesellschaft Circuit arrangement for limiting the power of the optical signal emitted by a laser diode
JPH07240554A (ja) * 1994-02-28 1995-09-12 Fujitsu Ltd 半導体レーザ駆動装置
GB9417267D0 (en) * 1994-08-26 1994-10-19 Inmos Ltd Current generator circuit
JPH08139410A (ja) * 1994-11-02 1996-05-31 Fujitsu Ltd 発光素子駆動回路
JP2704133B2 (ja) * 1995-05-22 1998-01-26 日本電気テレコムシステム株式会社 レーザダイオード駆動回路
KR100400383B1 (ko) * 1996-03-07 2003-12-31 마츠시타 덴끼 산교 가부시키가이샤 기준 전압원 회로 및 전압 피드백 회로
DE19621110C1 (de) * 1996-05-24 1997-06-12 Siemens Ag Ein-/Ausschaltbare Schaltungsanordnung zur Erzeugung eines Referenzpotentials

Also Published As

Publication number Publication date
EP0895325A3 (de) 2004-12-15
JP4116133B2 (ja) 2008-07-09
EP0895325B1 (de) 2007-01-24
US6037832A (en) 2000-03-14
EP0895325A2 (de) 1999-02-03
DE69836940T2 (de) 2007-10-31
JPH11103108A (ja) 1999-04-13

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Legal Events

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