DE69806281D1 - Verfahren und Vorrichtung zum Herstellen laminierter dünnen Schichten - Google Patents
Verfahren und Vorrichtung zum Herstellen laminierter dünnen SchichtenInfo
- Publication number
- DE69806281D1 DE69806281D1 DE69806281T DE69806281T DE69806281D1 DE 69806281 D1 DE69806281 D1 DE 69806281D1 DE 69806281 T DE69806281 T DE 69806281T DE 69806281 T DE69806281 T DE 69806281T DE 69806281 D1 DE69806281 D1 DE 69806281D1
- Authority
- DE
- Germany
- Prior art keywords
- thin layers
- laminated thin
- producing laminated
- producing
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06545397A JP3341619B2 (ja) | 1997-03-04 | 1997-03-04 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69806281D1 true DE69806281D1 (de) | 2002-08-08 |
DE69806281T2 DE69806281T2 (de) | 2003-01-16 |
Family
ID=13287588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69806281T Expired - Fee Related DE69806281T2 (de) | 1997-03-04 | 1998-03-04 | Verfahren und Vorrichtung zum Herstellen laminierter dünnen Schichten |
Country Status (6)
Country | Link |
---|---|
US (2) | US6022586A (de) |
EP (1) | EP0863227B1 (de) |
JP (1) | JP3341619B2 (de) |
KR (1) | KR100373790B1 (de) |
DE (1) | DE69806281T2 (de) |
TW (1) | TW419790B (de) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6127269A (en) * | 1996-11-12 | 2000-10-03 | Taiwan Semiconductor Manufacturing Company | Method for enhancing sheet resistance uniformity of chemical vapor deposited (CVD) tungsten silicide layers |
US6316052B1 (en) | 1998-08-19 | 2001-11-13 | Anelva Corporation | Method for the surface treatment of vacuum materials and surface treated vacuum |
KR100273767B1 (ko) * | 1998-10-28 | 2001-01-15 | 윤종용 | 반도체소자의 텅스텐막 제조방법 및 그에 따라 제조되는 반도체소자 |
JP2000294775A (ja) * | 1999-04-07 | 2000-10-20 | Sony Corp | 半導体装置の製造方法 |
US6181727B1 (en) * | 1999-04-19 | 2001-01-30 | General Electric Company | Coating for reducing operating temperatures of chamber components of a coating apparatus |
TW469519B (en) * | 1999-05-19 | 2001-12-21 | Applied Materials Inc | Utilization of SiH4 soak and purge in deposition processes |
US6817381B2 (en) * | 1999-08-24 | 2004-11-16 | Tokyo Electron Limited | Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus |
DE19945299A1 (de) * | 1999-09-22 | 2001-03-29 | Gfe Met & Mat Gmbh | Plasmabeschichtungsverfahren und dreidimensionales Kunststoffsubstrat mit einer metallhaltigen Beschichtung auf der Kunststoffoberfläche |
JP2001196326A (ja) | 2000-01-11 | 2001-07-19 | Tokyo Electron Ltd | タングステンシリサイド膜の成膜方法及びゲート電極/配線の作製方法 |
US6767429B2 (en) * | 2000-01-12 | 2004-07-27 | Tokyo Electron Limited | Vacuum processing apparatus |
JP4505915B2 (ja) * | 2000-01-13 | 2010-07-21 | 東京エレクトロン株式会社 | 成膜方法 |
US6756088B2 (en) * | 2000-08-29 | 2004-06-29 | Micron Technology, Inc. | Methods of forming coatings on gas-dispersion fixtures in chemical-vapor-deposition systems |
US7018504B1 (en) * | 2000-09-11 | 2006-03-28 | Asm America, Inc. | Loadlock with integrated pre-clean chamber |
KR100516844B1 (ko) * | 2001-01-22 | 2005-09-26 | 동경 엘렉트론 주식회사 | 처리 장치 및 처리 방법 |
KR100430473B1 (ko) * | 2001-02-06 | 2004-05-10 | 삼성전자주식회사 | 텅스텐 실리사이드 형성방법 |
JP3990881B2 (ja) * | 2001-07-23 | 2007-10-17 | 株式会社日立製作所 | 半導体製造装置及びそのクリーニング方法 |
US6899507B2 (en) * | 2002-02-08 | 2005-05-31 | Asm Japan K.K. | Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections |
US6776849B2 (en) * | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
US6772513B1 (en) * | 2002-06-27 | 2004-08-10 | Sandia Corporation | Method for making electro-fluidic connections in microfluidic devices |
US20050136657A1 (en) * | 2002-07-12 | 2005-06-23 | Tokyo Electron Limited | Film-formation method for semiconductor process |
EP1420080A3 (de) | 2002-11-14 | 2005-11-09 | Applied Materials, Inc. | Vorrichtung und Verfahren zu hybriden chemischen Abscheidungsverfahren |
US7494560B2 (en) * | 2002-11-27 | 2009-02-24 | International Business Machines Corporation | Non-plasma reaction apparatus and method |
JP2006524429A (ja) * | 2003-03-28 | 2006-10-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Nドープシリコン層のエピタキシャル成長のための方法 |
KR100520837B1 (ko) * | 2003-04-01 | 2005-10-13 | 삼성전자주식회사 | 반도체 소자의 제조방법 |
KR100529675B1 (ko) * | 2003-12-31 | 2005-11-17 | 동부아남반도체 주식회사 | 반도체 소자의 제조 방법 |
US7364007B2 (en) * | 2004-01-08 | 2008-04-29 | Schlumberger Technology Corporation | Integrated acoustic transducer assembly |
JP2005259870A (ja) * | 2004-03-10 | 2005-09-22 | Nikon Corp | 基板保持装置、ステージ装置及び露光装置並びに露光方法 |
US20050260354A1 (en) * | 2004-05-20 | 2005-11-24 | Varian Semiconductor Equipment Associates, Inc. | In-situ process chamber preparation methods for plasma ion implantation systems |
KR100596327B1 (ko) * | 2004-09-08 | 2006-07-06 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 |
US20060096622A1 (en) * | 2004-11-11 | 2006-05-11 | Samsung Electronics Co., Ltd. | Dry cleaning apparatus used to manufacture semiconductor devices |
JP4541864B2 (ja) * | 2004-12-14 | 2010-09-08 | 東京エレクトロン株式会社 | シリコン酸窒化膜の形成方法、形成装置及びプログラム |
KR100686724B1 (ko) * | 2005-06-30 | 2007-02-26 | 삼성전자주식회사 | 화학기상증착장치 |
US7550381B2 (en) * | 2005-07-18 | 2009-06-23 | Applied Materials, Inc. | Contact clean by remote plasma and repair of silicide surface |
US20070054045A1 (en) * | 2005-08-25 | 2007-03-08 | Hsienting Hou | Method for conditioning chemical vapor deposition chamber |
KR100735520B1 (ko) | 2005-09-23 | 2007-07-04 | 삼성전자주식회사 | 텅스텐 실리사이드막 형성 방법 및 이를 이용한 반도체소자의 제조 방법 |
TWI381470B (zh) * | 2007-05-08 | 2013-01-01 | Tokyo Electron Ltd | And a treatment device provided with the valve |
US7993461B2 (en) * | 2007-05-30 | 2011-08-09 | Intermolecular, Inc. | Method and system for mask handling in high productivity chamber |
KR100903565B1 (ko) * | 2007-07-11 | 2009-06-23 | 주식회사 탑 엔지니어링 | 탄소나노튜브 도전막 제조 장비 |
US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
KR101548399B1 (ko) * | 2007-12-27 | 2015-08-28 | 램 리써치 코포레이션 | 복수의 가스의 가스 혼합물을 제공하는 장치, 복수의 믹싱 매니폴드 출구 밸브를 제어하는 방법 및 이를 구현하기 위한 머신 판독가능 저장 매체 |
JP4430718B2 (ja) * | 2008-03-21 | 2010-03-10 | 三井造船株式会社 | 原子層成膜装置 |
JP5352103B2 (ja) * | 2008-03-27 | 2013-11-27 | 東京エレクトロン株式会社 | 熱処理装置および処理システム |
JP5102706B2 (ja) * | 2008-06-23 | 2012-12-19 | 東京エレクトロン株式会社 | バッフル板及び基板処理装置 |
JP5457021B2 (ja) * | 2008-12-22 | 2014-04-02 | 東京エレクトロン株式会社 | 混合ガスの供給方法及び混合ガスの供給装置 |
US8440048B2 (en) * | 2009-01-28 | 2013-05-14 | Asm America, Inc. | Load lock having secondary isolation chamber |
JP5513413B2 (ja) * | 2009-01-29 | 2014-06-04 | 東京エレクトロン株式会社 | 成膜装置およびガス吐出部材 |
JP5158068B2 (ja) | 2009-02-20 | 2013-03-06 | 東京エレクトロン株式会社 | 縦型熱処理装置及び熱処理方法 |
TW201043724A (en) * | 2009-03-16 | 2010-12-16 | Alta Devices Inc | Heating lamp system and methods thereof |
TWI385272B (zh) * | 2009-09-25 | 2013-02-11 | Ind Tech Res Inst | 氣體分佈板及其裝置 |
US20110097489A1 (en) * | 2009-10-27 | 2011-04-28 | Kerr Roger S | Distribution manifold including multiple fluid communication ports |
DE102009051347A1 (de) * | 2009-10-30 | 2011-05-12 | Sunfilm Ag | Verfahren zur Herstellung von Halbleiterschichten |
KR101130618B1 (ko) * | 2010-04-20 | 2012-05-22 | (주)엔티아 | 웨이퍼 증착 장치 |
US20120083129A1 (en) | 2010-10-05 | 2012-04-05 | Skyworks Solutions, Inc. | Apparatus and methods for focusing plasma |
US9478428B2 (en) * | 2010-10-05 | 2016-10-25 | Skyworks Solutions, Inc. | Apparatus and methods for shielding a plasma etcher electrode |
SG192967A1 (en) | 2011-03-04 | 2013-09-30 | Novellus Systems Inc | Hybrid ceramic showerhead |
US10316409B2 (en) * | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
CN104250727A (zh) * | 2013-06-26 | 2014-12-31 | 中芯国际集成电路制造(上海)有限公司 | 化学气相沉积设备保养后复机方法 |
US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
KR101707102B1 (ko) * | 2014-11-05 | 2017-02-27 | (주)에스아이 | 화학기상증착용 가스분사노즐 |
US10378107B2 (en) | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
WO2016195984A1 (en) * | 2015-06-05 | 2016-12-08 | Applied Materials, Inc. | Improved apparatus for decreasing substrate temperature non-uniformity |
US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
KR20200087267A (ko) | 2017-12-08 | 2020-07-20 | 램 리써치 코포레이션 | 리모트 플라즈마 막 증착을 인에이블하도록 다운스트림 챔버로 라디칼 및 전구체 가스를 전달하기 위해 개선된 홀 패턴을 갖는 통합된 샤워헤드 |
US10950449B2 (en) * | 2018-01-12 | 2021-03-16 | Asm Ip Holding B.V. | Substrate processing apparatus |
US20190311887A1 (en) * | 2018-04-06 | 2019-10-10 | Applied Materials, Inc. | Multizone gas distribution apparatus |
CN111864529B (zh) * | 2019-04-30 | 2021-12-07 | 潍坊华光光电子有限公司 | 一种半导体激光器cos固晶快速压膜拆膜装置及压膜拆膜方法 |
CN114351118A (zh) * | 2020-10-13 | 2022-04-15 | 东部超导科技(苏州)有限公司 | Mocvd反应系统及rebco高温超导带材的制法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3709066A1 (de) | 1986-03-31 | 1987-10-01 | Toshiba Kawasaki Kk | Verfahren zum erzeugen eines duennen metallfilms durch chemisches aufdampfen |
US4792378A (en) * | 1987-12-15 | 1988-12-20 | Texas Instruments Incorporated | Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor |
JPH02111032A (ja) * | 1988-10-20 | 1990-04-24 | Matsushita Electron Corp | Mos集積回路装置の製造方法 |
JPH02181918A (ja) * | 1989-01-09 | 1990-07-16 | Matsushita Electron Corp | 半導体装置の製造方法 |
JPH02292866A (ja) * | 1989-05-02 | 1990-12-04 | Nec Corp | Mis型半導体装置の製造方法 |
JP2773938B2 (ja) * | 1989-11-24 | 1998-07-09 | 沖電気工業株式会社 | 半導体装置の製造方法 |
DE4029268C2 (de) * | 1990-09-14 | 1995-07-06 | Balzers Hochvakuum | Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung |
US5326723A (en) * | 1992-09-09 | 1994-07-05 | Intel Corporation | Method for improving stability of tungsten chemical vapor deposition |
JP2909364B2 (ja) * | 1993-09-20 | 1999-06-23 | 東京エレクトロン株式会社 | 処理装置及びそのクリーニング方法 |
JP2881371B2 (ja) * | 1993-09-20 | 1999-04-12 | 東京エレクトロン株式会社 | 真空処理装置及び真空処理装置集合体のクリーニング方法 |
JPH07172809A (ja) * | 1993-10-14 | 1995-07-11 | Applied Materials Inc | 基板上への珪化タングステンコーティングの堆積操作の事前に堆積チャンバのアルミニウムを有する表面を処理する予備処理プロセス |
JP3362552B2 (ja) * | 1995-03-10 | 2003-01-07 | 東京エレクトロン株式会社 | 成膜処理装置 |
US5653806A (en) * | 1995-03-10 | 1997-08-05 | Advanced Technology Materials, Inc. | Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same |
JP3430277B2 (ja) * | 1995-08-04 | 2003-07-28 | 東京エレクトロン株式会社 | 枚葉式の熱処理装置 |
US5747845A (en) * | 1995-08-22 | 1998-05-05 | Nippon Steel Corporation | Semiconductor memory device with memory cells each having transistor and capacitor and method of making the same |
US5950925A (en) * | 1996-10-11 | 1999-09-14 | Ebara Corporation | Reactant gas ejector head |
KR100252210B1 (ko) * | 1996-12-24 | 2000-04-15 | 윤종용 | 반도체장치 제조용 건식식각장치 |
US6063198A (en) * | 1998-01-21 | 2000-05-16 | Applied Materials, Inc. | High pressure release device for semiconductor fabricating equipment |
-
1997
- 1997-03-04 JP JP06545397A patent/JP3341619B2/ja not_active Expired - Fee Related
-
1998
- 1998-02-24 US US09/028,645 patent/US6022586A/en not_active Expired - Fee Related
- 1998-02-25 TW TW087102706A patent/TW419790B/zh not_active IP Right Cessation
- 1998-03-04 DE DE69806281T patent/DE69806281T2/de not_active Expired - Fee Related
- 1998-03-04 KR KR10-1998-0007161A patent/KR100373790B1/ko not_active IP Right Cessation
- 1998-03-04 EP EP98103808A patent/EP0863227B1/de not_active Expired - Lifetime
-
1999
- 1999-12-29 US US09/473,682 patent/US6251188B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3341619B2 (ja) | 2002-11-05 |
EP0863227A1 (de) | 1998-09-09 |
DE69806281T2 (de) | 2003-01-16 |
US6022586A (en) | 2000-02-08 |
EP0863227B1 (de) | 2002-07-03 |
KR19980079901A (ko) | 1998-11-25 |
KR100373790B1 (ko) | 2003-04-21 |
JPH10247627A (ja) | 1998-09-14 |
TW419790B (en) | 2001-01-21 |
US6251188B1 (en) | 2001-06-26 |
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