TW469519B - Utilization of SiH4 soak and purge in deposition processes - Google Patents
Utilization of SiH4 soak and purge in deposition processes Download PDFInfo
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- TW469519B TW469519B TW89109668A TW89109668A TW469519B TW 469519 B TW469519 B TW 469519B TW 89109668 A TW89109668 A TW 89109668A TW 89109668 A TW89109668 A TW 89109668A TW 469519 B TW469519 B TW 469519B
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 238000010926 purge Methods 0.000 title claims abstract 3
- 238000005137 deposition process Methods 0.000 title description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 96
- 238000000034 method Methods 0.000 claims abstract description 90
- 239000007789 gas Substances 0.000 claims abstract description 74
- 235000012431 wafers Nutrition 0.000 claims abstract description 63
- 238000000151 deposition Methods 0.000 claims abstract description 57
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000012545 processing Methods 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 230000002829 reductive effect Effects 0.000 claims abstract description 13
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims abstract 5
- 239000010408 film Substances 0.000 claims description 50
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 47
- 238000004140 cleaning Methods 0.000 claims description 35
- 229910052786 argon Inorganic materials 0.000 claims description 24
- 239000011261 inert gas Substances 0.000 claims description 21
- 229910000077 silane Inorganic materials 0.000 claims description 17
- 238000011049 filling Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 13
- 230000002079 cooperative effect Effects 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000003870 refractory metal Substances 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
- 229910052756 noble gas Inorganic materials 0.000 abstract 3
- 230000003750 conditioning effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 42
- 238000002156 mixing Methods 0.000 description 32
- 238000010438 heat treatment Methods 0.000 description 15
- 239000012159 carrier gas Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 10
- 230000007774 longterm Effects 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910019044 CoSix Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000208827 Ligularia Species 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 101100450085 Silene latifolia SlH4 gene Proteins 0.000 description 1
- 229910008486 TiSix Inorganic materials 0.000 description 1
- 150000001485 argon Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 fluoride ions Chemical class 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002147 killing effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
469519 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（1 ) 相關申諸案 此申請案係1998年9月2 8曰提出之共待審美國專利申請案 第09/162,336號[729.D2]之部分繼續案，其係1996年1 1月5 曰提出之美國專利申請案第08/743,929號之一部分，此已公 佈為美國專利第5,817,576號[729.F 1]，其係1994年9月27曰 提出之美國專利申請案第08/314，161號[729]之原案繼績案3 發明背景 發明範圍 本發明有-襴一種經改良化學蒸氣澱獠方法，諸如一種自 六氟化鎢（WFe)與二氣矽烷（DCS)澱積矽化鎢（WSix)之方法。 相關技街眢吾 已經使用矽烷（SiH4)與六氟化鎢（WFe)作為先質氣體，藉 由低壓化學蒸氣澱積作用（LPCVD)將矽化鎢（WSix)薄膜殿 積於半導體基板上。通常，將识8^薄膜澱積於一種多晶梦 層下具有一層氧化矽之半導體晶圓。然而，已證明前述方 法無法完全符合需求^ 前述方法的問題之一係該殿積塗層與階梯狀地形的一致 性不及所需程度□其他問題係后此殿積之薄膜殘留氟含量 高’其對負面影響裝置性能。例如’當該晶圓曝於高溫時 ’例如約850°C以上，於退火期間，過多之氟化物離子經由 下層多晶矽層移至下層氧化矽層。因此，氧化矽層之有效 厚度増加。此種有效厚度增加會造成包括此等層之半導體 裝置電性質的負面改變。 使用諸如Maydan等人提出之美國專利申請案第4,951,601 -4- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） n n I] Λ n n n 訂---------線'-------- (請先閉讀背面之注意事項再«.寫本頁) 經濟部智慧財產局員工消費合作社印製 46 95 19 A7 ______ B7 五、發明說明（2 ) 號（以提及的方式併入本文中）所述之多室式眞空處理系統 ，首先使用氟電漿滌氣清潔欲塗覆矽化鎢之基板，以去除 多晶矽層之原有氧化物。然後將該清潔基板輪送至—個基 板輸送室。此輸送室具有氮或氣氣氛（低於大氣壓），避免 該基板再氧化，而且包含一個機械手，經由_個具有Q形 密封圈之缝隙閥將該基板送入一個處理室，例如—個鎮殿 積室。此CVD方法已成爲自SiH4與WFg澱積矽化鎢之標準。 然而隨著基板變大以及裝置用之圖型大小變小，使用方法 之上述階梯^覆蓋與殘留氟之問題成爲未來應用之嚴格限 制。 已提出一種使用二氣矽烷（DCS)代替SiH4澱積wsix薄膜之 改良方法。所形成之WSix薄膜氟含量減少，而且比使用 SiHU作爲先質氣體澱積者之一致性更高，因此提供—種解 決SilLt澱積方法限制的方法。爲了澱積具有良好一致性、 低氟含量以及和基板（諸如矽晶圓’其上具有一或多層）黏 附良好之WSix薄膜’已發現於澱積處理期間自澱積室排除 氮源較佳。此種改良方法係由張（Chang)等人於1993年10月 14曰所申請之美國專利申請案序號第08/136,529號所提出， 該申請案以提及的方式併入本文中。此方法（“DCS法，，）中 ，將WFe DCS與一種惰性載體氣體通入—個鎢澱積室，自 該室排除氮，製得碎化鎢薄膜。 在澱積方法中，慣常於處理每個半導體晶圓後清潔該澱 積室與氣體輸送管路，以便去除該室與輸送管路之殘留反 應性氣體與載體氣體。上述之DCS方法通常包括一種使用 本紙張尺度適用中國國家標準（CNS>A4規格（210 297公爱） 1-----------一农-------！訂---------線Λ (請先閱讀背面之注意事項再填寫本頁) 46 95 19 A7 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（3 ) DCS作爲清潔氣體之清潔步驟。 然而，已發現根據DCS方法將冒31澱積在半導體晶圓上， 就短期與長期而言，會伴隨著該處理晶圓之薄膜電阻顯著 下降之趨勢。使用該DCS方法’已觀察到處理25片晶圓期 間’薄膜電阻下降2歐姆/平.方。此種短期電阻係數變動量 至降低5 %以上。亦可觀察到處理500片晶圓之長期電阻係 數變動至4-5歐姆/平方。 存在一種改良習知DCS澱積方法之需求，其降低觀察到之 薄膜電阻係·數短期與長期下降趨勢。 發明總論 根據本發明層面之一，於一種眞空處理裝置之室中處理 一種基板，諸如一種半導體晶圓，其中使用氣體混合物將 種材料殺積在該基板表面，並使3出4與氮或是—或多種 惰性氣體流入該室，清潔澱積步驟所殘留之殘留氣體，以 清潔該室。 本發明一種更特別層面中，使用—種包括WF6與二氣矽烷 I混合物將州8。澱積在一種半導體晶圓表面上，然後將 SiH4流入該室，並併用氮或是氮與一或多種惰性氣體，清 潔孩室剩餘之醫6與二氣錢。已發現於不存在氧或水蒸 氣之下，使用氮清潔ws!x不會損害薄膜性質。 根據本發明另-層面，於;殿積wsix之後並且以siH4清潔之 前進行選擇性DCS部分清潔作用β —根，本發明另—層面’於;殿積處理之前，使用併用 氮或疋-或多種惰性氣體）調整眞空處理室。肌調整步驟 --I-----I H 1^ ^ - I ------I ^— — — 1 —--^ (請先閱讀背面之注意事項再填寫本頁) -6- A7469519 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (1) Related Applications This application is a pending US patent application No. 09 / 162,336 filed on September 28, 1998 [ 729.D2], which is part of US Patent Application No. 08 / 743,929 filed on November 5, 1996, which has been published as US Patent No. 5,817,576 [729.F 1], which is Original patent succession of U.S. Patent Application No. 08 / 314,161 [729] filed on September 27, 1994 3 BACKGROUND OF THE INVENTION The scope of the present invention is-a modified chemical vapor deposition method, such as a Method for depositing tungsten silicide (WSix) with tungsten fluoride (WFe) and digas silane (DCS). Related technology Ligularia has used silane (SiH4) and tungsten hexafluoride (WFe) as precursor gases to deposit tungsten silicide (WSix) films on semiconductor substrates by low-pressure chemical vapor deposition (LPCVD). Generally, a thin film is deposited on a semiconductor wafer with a layer of silicon oxide under a polycrystalline dream layer. However, it has been proved that the foregoing method cannot fully meet the requirements ^ One of the problems of the foregoing method is that the Dianji coating is inconsistent with the stepped terrain than the required level. □ Other problems are that the residual fluorine content of the Dianji film is high. Negatively affect device performance. For example, 'when the wafer is exposed to high temperature', for example, above about 850 ° C, during the annealing, excessive fluoride ions move through the lower polycrystalline silicon layer to the lower silicon oxide layer. Therefore, the effective thickness of the silicon oxide layer is increased. Such an increase in effective thickness may cause a negative change in the electrical properties of a semiconductor device including these layers. U.S. Patent Application No. 4,951,601 filed by Maydan et al. This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) nn I] Λ nnn Order --------- Line '-------- (Please close the precautions on the back before «. Write this page） Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 46 95 19 A7 ______ B7 V. Description of Invention (2) The multi-chamber hollowing system described (incorporated in the manner mentioned) first cleans the substrate to be coated with tungsten silicide using a fluorine plasma to remove the original oxide of the polycrystalline silicon layer. The clean substrate is then wheeled to a substrate transfer chamber. This transfer chamber has a nitrogen or gas atmosphere (below atmospheric pressure) to prevent the substrate from reoxidizing, and contains a robotic arm, which sends the substrate into a processing chamber via a gap valve with a Q-shaped seal, such as a town Dianji room. This CVD method has become the standard for the deposition of tungsten silicide from SiH4 and WFg. However, as the substrate becomes larger and the pattern size of the device becomes smaller, the problems of the above-mentioned steps ^ covering and residual fluorine in the use method become strict restrictions for future applications. An improved method for depositing wsix films using digas silane (DCS) instead of SiH4 has been proposed. The formed WSix film has a reduced fluorine content and is more consistent than SiHU as a precursor gas depositor, thus providing a method to overcome the limitations of the SilLt deposition method. In order to deposit a WSix film with good consistency, low fluorine content, and good adhesion to a substrate (such as a silicon wafer with one or more layers thereon), it has been found that it is better to exclude the nitrogen source from the deposition chamber during the deposition process. This improved method was proposed by Chang et al., US Patent Application Serial No. 08 / 136,529, filed October 14, 1993, which is incorporated herein by reference. In this method ("DCS method,"), WFe DCS and an inert carrier gas are passed into a tungsten deposition chamber, and nitrogen is removed from the chamber to produce a shredded tungsten film. In the deposition method, it is customary to process After each semiconductor wafer, the deposition chamber and the gas transfer pipeline are cleaned in order to remove the residual reactive gas and carrier gas from the chamber and the transfer pipeline. The above-mentioned DCS method usually includes the use of a paper standard that is applicable to Chinese national standards ( CNS > A4 specifications (210 297 public love) 1 ----------- a farmer -------! Order --------- line Λ (please read the back of the first Note: Please fill in this page again.) 46 95 19 A7 Printed by B7 of the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. V. Description of the invention (3) DCS as a cleaning step for cleaning gas. However, it has been found that 31 is deposited in the DCS method. On semiconductor wafers, in the short and long term, there will be a significant decrease in the sheet resistance of the processed wafers. Using the DCS method 'has been observed during the processing of 25 wafers' the sheet resistance drops by 2 ohms / level. This kind of short-term resistance coefficient change is reduced to more than 5%. It has been observed that the long-term resistivity variation for processing 500 wafers is 4-5 ohms / square. There is a need to improve the conventional DCS deposition method, which reduces the short-term and long-term decline in the observed thin-film resistance system. Total inventions According to one aspect of the present invention, a substrate, such as a semiconductor wafer, is processed in a chamber of a hollow processing device, wherein a gas mixture is used to kill a material on the surface of the substrate, and 3 and 4 are nitrogen or- One or more inert gases are flowed into the chamber, and the residual gas remaining in the deposition step is cleaned to clean the chamber. In a more particular aspect of the present invention, State 8 is deposited using a mixture comprising WF6 and digas silane I. Deposited in a On the surface of the semiconductor wafer, SiH4 is then flowed into the chamber, and the remaining doctor's room 6 and 2 gas are cleaned with nitrogen or nitrogen and one or more inert gases. It has been found in the absence of oxygen or water vapor, The use of nitrogen to clean ws! X does not impair the properties of the film. According to another aspect of the present invention, after selective wsix and before siH4 cleaning, a selective DCS partial cleaning action β-root is performed, Another aspect of the invention is: before the Dianji treatment, adjust and empty the processing chamber with nitrogen or krypton (or multiple inert gases). Muscle adjustment steps --I ----- IH 1 ^ ^-I ----- -I ^ — — — 1 —-- ^ (Please read the notes on the back before filling this page) -6- A7
469519 經濟部智慧財產局員工消費合作杜印製 五、發明說明（4 ) 可以個別使用或是與前述SiH；4清潔步骤結合，作爲在眞空 殿積室中處理基板之方法的一部分。 根據本發明另一層面，亦提出前述方法提出之半導體晶 圓。如此製造之晶圓特徵係其薄膜電阻變化減少，其他特 徵係殿積時薄膜應力降低。 本發明其他層面中提出一種眞空處理裝置，其包括—個 室、於該室内將一種材料（諸如WSix)澱積在基板表面之裝 備’以及以併用一或多種惰性氣體與siH4清潔該室之裝備。 將該材枓髮積在該基板表面之較佳裝備包括至少一種反 應性氣體之來源，以及將該反應性氣體導入該室之裝備。 特別是’該裝置最好包括WFe與DCS來源，以及用以併用此 等氣體，以形成反應性氣體混合物之裝備。 以S1H4清潔該室之裝備最好包括一種siil4來源 ' —種氮來 源 '一種惰性氣體來源，以及將SiH4、氮與選擇性—種惰 性氣體導入該室之裝備。 熟知本技藝者由下列詳細描述可以明白本發明其他目的 、特性與優點。然而，必須暸解雖然詳述與特定實例表示 本發明較佳具體實例，但是其係作爲説明而非限制。在不 違背本發明精神下’在本發明範圍内可獲得若干改變與改 良’而且本發明包括所有此等改良。 圖式簡述 爲了詳細暸解本發明上述特性、優點與目的，可以參考 附圖所7F之具體實例更詳細敘述本發明。不過，必須注意 的疋，因爲本發明有其他相同效果之具體實例，該附圖僅 本紙張尺度適用令國國家標準（CNS)A4規格（210 297公釐） {請先閲讀背面之注項再填寫本頁) 訂---------線丄 A7 B7 469519 五、發明說明（5 ) 爲本發明代表性具體實例，所以不可用以限制本發明範圍。 參考附圖更容易暸解本發明，其中： 圖1係一種範列眞空處理裝置之示意剖面圖，更仔細地説 ，其係一種嫣;殿積室，適於進行本發明方法； 圖2係圖1大致顯示之較佳氣體混合物装配之詳細示意圖； 囷3係於退火期間測得之薄膜應力圖，作爲溫度之函數， 以比較根據習用DCS方法在半導體晶圓上澱積WSix薄膜， 以及以長方形所示之薄膜加熱期間測得之値與以三角形表 示之冷卻期_間測得之値； 圖4係應力之對應圖’其作爲根據本發明方法將一種範例 WSix薄膜澱積壁半導體晶圓上之溫度函數； 圖5係一流程圖，顯示根據本發明方法處理半導體晶圓之 範列方法；以及469519 Consumption Cooperation by Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (4) Can be used individually or combined with the aforementioned SiH; 4 cleaning steps as part of the method for processing substrates in the empty room. According to another aspect of the present invention, a semiconductor wafer made by the aforementioned method is also proposed. The characteristics of the wafer manufactured in this way are that the change in the sheet resistance is reduced, and the other features are that the film stress is reduced during the buildup. In another aspect of the present invention, an air treatment device is provided, which includes a chamber, a device in which a material such as WSix is deposited on the surface of the substrate, and equipment for cleaning the chamber with one or more inert gases and siH4 in combination. Preferred equipment for accumulating the material on the surface of the substrate includes at least one source of a reactive gas, and equipment for introducing the reactive gas into the chamber. In particular, the apparatus preferably includes sources of WFe and DCS, and equipment for combining these gases to form a reactive gas mixture. The equipment for cleaning the chamber with S1H4 preferably includes a source of siil4 '-a source of nitrogen' an inert gas source, and equipment for introducing SiH4, nitrogen and selective-an inert gas into the chamber. Those skilled in the art can understand other objects, features, and advantages of the present invention from the following detailed description. It must be understood, however, that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration and not limitation. Without departing from the spirit of the invention ' a number of changes and improvements can be obtained within the scope of the invention ' and the invention includes all such improvements. Brief Description of the Drawings In order to understand the above characteristics, advantages and objects of the present invention in detail, the present invention can be described in more detail with reference to a specific example of 7F of the accompanying drawings. However, it must be noted that, because the present invention has other specific examples of the same effect, the drawing is only applicable to the national standard (CNS) A4 specification (210 297 mm) of this paper size. {Please read the note on the back before (Fill this page) Order --------- line A7 B7 469519 V. Description of the invention (5) This is a representative specific example of the invention, so it cannot be used to limit the scope of the invention. The present invention is easier to understand with reference to the drawings, in which: FIG. 1 is a schematic cross-sectional view of a fan-space emptying device, and more specifically, it is a Yan; 1 A detailed schematic diagram of the assembly of a preferred gas mixture shown generally; 系 3 is the stress map of the film measured during annealing as a function of temperature to compare the deposition of WSix films on semiconductor wafers according to the conventional DCS method, and the rectangular shape The 値 measured during the heating of the thin film and the 値 measured during the cooling period _ shown in the triangle are shown in FIG. 4; Temperature function; FIG. 5 is a flowchart showing a method for processing a semiconductor wafer according to the method of the present invention; and
圖6 A - D係顯不根據圖3與圖4所述方法處理之半導體晶 圓的薄膜電阻（0)與均勾度(□)變化，其中圖6a_B分別顯j 以習用與本發明方法製造25片後觀察到之變化，而圖6C_D 分別顯示以習用與本發明方法製造500片後觀察到之變化。 較佳具體實例詳沭 本發明使用WF6與DCS將WSix殿積壁半導體晶圓上之後， 併用矽烷-或者更精確地説，一矽烷（SiH4)_#氮或一種惰性 乳體清潔鶏澱積室。本發明之方法大致上降低所製得半導 體晶圓之薄膜電阻短期與長期下降趨勢。 使用本發明方法，保有習知DCS澱積方法所有益處，其額 外益處係薄膜電阻之短期與長期變動自約5 %降至約3 %。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） ----L1--— 1!《 裝*---I---訂--- 線 4 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製Figures 6-A show the changes in the sheet resistance (0) and the uniformity (□) of a semiconductor wafer not processed according to the methods described in Figures 3 and 4, where Figures 6a_B respectively show j manufactured by conventional and the method of the present invention. The changes observed after 25 tablets, and Fig. 6C_D show the changes observed after 500 tablets were made by the conventional and the method of the present invention, respectively. The preferred embodiment is described in detail. After the WSix semiconductor wafer is mounted on the WSix semiconductor wafer using WF6 and DCS, the silane deposition chamber is cleaned with silane-or more precisely, a silane (SiH4) _ # nitrogen or an inert emulsion . The method of the present invention substantially reduces the short-term and long-term downward trend of the sheet resistance of the semiconductor wafer produced. With the method of the present invention, all the benefits of the conventional DCS deposition method are retained. The additional benefit is that the short-term and long-term variation of the film resistance is reduced from about 5% to about 3%. This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 public love) ---- L1 ------ 1! 《装 * --- I --- Order --- Line 4 (Please read the back first (Please note this page before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs
五、發明說明（6 469519 因此’根據本發明處理之半導體晶圓顯示出薄膜電阻變化 降低。 本發明人亦出人意料地發現澱積wSk薄膜中之應力顯著 降低’其爲本發明結果。 視情況需要’可以使用用以進行習知DCS方法之習用化學 蒸氣澱積（CVD)系統進行本發明之方法，不需要改良該眞 積主例如可以使用應用材料公司（Applied Materials InC‘）所提供之裝置進行本發明方法，該裝置如上述張 (Chang)等人之美國專利申請案序號第〇8/136,529號所述。 不過本發明方法不只局限於使用此種裝置之應用。特 別是，可以使用一種多室式處理系統代替單室式處理系統 進行本發明方法。 現在參考圖1，一種CVD系統丨〇包括澱積室i 2、抽眞空 系統14、通常以16表示之氣體混合裝配、擴散器18、晶圓 提吊裝置20、擂板22、提吊機械手24與感受器提吊裝置 26將種基板28(諸如其上具有一層多晶矽之砍晶圓）澱 積在一支撑物或是感受器30上。 於感焚器30與安裝於其上之基板28處理期間，加熱裝備 32保持均勻溫度。該澱積或反應區34位於基板上方。 在説明具體實例中’加熱裝備3 2係1〇〇〇瓦之外部陣列， 經由矽英視窗3 6導入經校準光。亦可使用其他習知加熱裝 備。特別適用之加熱裝備32包括電阻加熱裝備比包括燈爲 佳。使用電阻加熱裝置時，可以省略石英視窗3 6。因此， 使用電阻加熱裝備避免對於定期清潔及/或替換石英視窗之 -9 本紙張尺度適用中國國家標準（CNS)A4現格<210 X 297公爱） 1-----------一衣---I----訂---------線χ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4 6 9519 A7 ___________ B7 五、發明說明（7 ) 需求，以及伴随之維修與間置時間之費用。 本發明實務中可使用之包括電阻加熱裝備之較佳眞空處 理裝置描述於李（Lei)等人於1994年2月23日申請之美=專 利申請案序號第0S/200,074號，其以提及的方式併入本文中。 氣體混合裝配1 6可包括一個氣體箱或風室與一或多種控 制各種處理氣體流動之閥，此等氣體包括清潔氣體、載體 氣體、用於澱積WSix之反應性氣體或是其他材料，以及清 潔氣體，諸如定期清潔該室用之NF3。 或者，可省略氣體混合裝配1 6 ,並經由擴散器i 8將所 有處理氣體直接輸送至室12。然而，此備擇方案致使不均 勾度更而’因此對特定應用而言較不佳。 圖2説明一種圖1之室所使用之範例氣體混合裝配16。送 料管路38與40將處理氣體輸送至風室42内，然後經由擴散 器18輸送至室12内。藉由混合管路44與46連接送料管路 3 8與4 0 ’然後依次以輸送管路4 8結合。閱5 〇與5 2分別位 於送料管路38與40上之混合管路44與46之間。如囷所示 ，入口混合閥54與5 6位於混合管路44上，出口混合閥58 與60對應地位於混合管路46上。轉向閥02位於轉向管路 48上。 將處理氣體來源連接於送料管路38與40。將含氣氣體來 源連接於送料管路38與40其中之一，並將含矽氣體來源連 接於其他送料管路爲佳。如圖1與圖2所示，WF6來源6 4與 NF3清潔氣體來源66分別經由供應閥68與7〇連接於送料管 路38。DCS來源72與與3¾來源74同樣分別經由供應閥76 本紙張尺度適用乍國國家標準（CNS>A4規格（210 X 297公釐） <請先閱讀背面之注意事項再填寫本頁) 訂---------線-{ 469519 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（8 ) 與78連接於送料管路40。一種非反應性氣體來源8〇經由供 應閥8 2連接於送料管路3 8，該非反應性氣體來源係—種氮 、氬或是氮與氬混合物之來源爲佳。 當處理氣體未流入室1 2時，各種閥之預設値如下：間5 〇 與5 2開啓；所有其他閥關閉。 回到圖1 ’處理氣體（即反應與載體氣體）經由氣體混合裳 配1 6與“蓮蓬頭”型擴散器1 8進入澱積室1 2，開始該殿積 處理。習用處理混合物包括DCS、WF6與氬。氣體滿合裝配 1 6混合擴嵌-器18上游之處理氣禮’於供應至擴散器Η之前 確使該氣體混合物是均勻組合物》擴散器在對應於其下 方基板28之範圍上具有無數開口。擴散器is與基板28的間 距可以調整自約200至1000密耳（5-25毫米），以界定反應區 34。擴散器18將混合處理氣體送料至反應區34。 經由底部管路88，以一種惰性氣體（以氬爲佳）清潔感受 器30平板下之該室範園’避免反應性氣體擴展至感受器3〇 下方之室1 2範圍。 該室内之基本壓力約1〇毫托耳。排氣系統14裝備有—個 節流閥8 6，其可以調整該室之壓力6 本發明方法之説明具體實例中，於氣體混合裝配丨6中混 合三種氣體、一種非反應性載體氣體（例如氬、氮或是氬與 氮之混合物）、WFS與DCS。開啓供應閥68，自來源64經由 送料管路38將WF0導入氣體混合裝配16。該WFs與非Z應 性載體氣體一起導入氣體混合物裝配16爲佳，開啓供應閥 82，自來源80輸送該非反應性載體氣體。開啓供應閥76， 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） f請先閱讀背面之注意事項再填寫本頁) ^1丨t訂---------線丄 4 b 9 5 1 9 A7V. Description of the invention (6 469519 Therefore, 'Semiconductor wafers processed according to the present invention show a reduction in the change in sheet resistance. The inventors also unexpectedly found that the stress in the deposited wSk film is significantly reduced' which is the result of the present invention. As the case requires 'The method of the present invention can be carried out using a conventional chemical vapor deposition (CVD) system for performing the conventional DCS method, without the need to improve the accumulator. For example, it can be performed using a device provided by Applied Materials InC'. In the method of the present invention, the device is as described in the above-mentioned U.S. Patent Application Serial No. 08 / 136,529 by Chang et al. However, the method of the present invention is not limited to the application using such a device. In particular, a multi- A chamber-type processing system performs the method of the present invention instead of a single-chamber-type processing system. Referring now to FIG. 1, a CVD system includes a deposition chamber i2, an evacuation system 14, a gas-mixed assembly generally indicated by 16, a diffuser 18, The wafer lifting device 20, the cymbal plate 22, the lifting robot 24, and the susceptor lifting device 26 hold a seed substrate 28 (such as a layer thereon). A polycrystalline silicon wafer is deposited on a support or susceptor 30. During processing of the incinerator 30 and the substrate 28 mounted thereon, the heating equipment 32 maintains a uniform temperature. The deposition or reaction area 34 is located on the substrate Above. In the illustrated example, the 'heating equipment 3 2 is a 1000-watt external array, and the calibrated light is introduced through the silicon window 36. Other conventional heating equipment can also be used. Particularly suitable heating equipment 32 includes resistance The heating equipment is better than including the lamp. When using the resistance heating device, the quartz window 3 can be omitted. Therefore, using the resistance heating equipment to avoid regular cleaning and / or replacement of the quartz window -9 This paper standard applies to the Chinese National Standard (CNS) A4 is now < 210 X 297 public love) 1 ----------- Yiyi --- I ---- Order --------- line χ (Please read the back first Please fill in this page before printing) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 9519 A7 ___________ B7 V. Description of the invention (7) Requirements, and the accompanying repairs Cost of time. The preferred air-handling device including resistance heating equipment that can be used in the practice of the present invention is described in Lei et al., Filed on February 23, 1994, US Beauty = Patent Application No. 0S / 200,074, which is referred to as Ways are incorporated herein. The gas mixing assembly 16 may include a gas box or plenum and one or more valves that control the flow of various processing gases. These gases include clean gas, carrier gas, reactive gas or other materials used to deposit WSix, and Clean gas, such as NF3 used to regularly clean the room. Alternatively, the gas mixing assembly 16 can be omitted, and all the processing gas can be directly delivered to the chamber 12 via the diffuser i 8. However, this alternative results in greater unevenness and is therefore less desirable for a particular application. FIG. 2 illustrates an exemplary gas mixing assembly 16 used in the chamber of FIG. The feed lines 38 and 40 convey the process gas into the air chamber 42 and then into the chamber 12 via the diffuser 18. Feeding lines 38 and 40 are connected by mixing lines 44 and 46 and then combined by conveying lines 48 in turn. Read 5 0 and 5 2 are located between the mixing lines 44 and 46 on the feeding lines 38 and 40, respectively. As shown by 囷, the inlet mixing valves 54 and 56 are located on the mixing line 44, and the outlet mixing valves 58 and 60 are located on the mixing line 46 correspondingly. The steering valve 02 is located on the steering line 48. The process gas source is connected to the feed lines 38 and 40. It is preferable to connect the gas-containing gas source to one of the feed lines 38 and 40, and to connect the silicon-containing gas source to the other feed lines. As shown in FIGS. 1 and 2, the WF6 source 64 and the NF3 clean gas source 66 are connected to the feed pipe 38 via supply valves 68 and 70, respectively. The DCS source 72 is the same as the 3¾ source 74 through the supply valve 76. This paper size is applicable to the national standard of the country (CNS> A4 size (210 X 297 mm) < Please read the precautions on the back before filling this page). Order- -------- Line- {469519 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (8) and 78 are connected to the feed pipe 40. A non-reactive gas source 80 is connected to the feed line 38 via a supply valve 82, and the non-reactive gas source is preferably a source of nitrogen, argon, or a mixture of nitrogen and argon. When the process gas does not flow into the chamber 12, the preset values of the various valves are as follows: between 50 and 52 are opened; all other valves are closed. Returning to FIG. 1 ′, the processing gas (that is, the reaction and carrier gas) enters the deposition chamber 12 through a gas mixing device 16 and a “head shower” type diffuser 18 to start the templet processing. Conventional treatment mixtures include DCS, WF6 and argon. Gas fully assembled assembly 6 The processing expansion of the hybrid expansion device 18 is performed before the supply to the diffuser to ensure that the gas mixture is a homogeneous composition. The diffuser has numerous openings in a range corresponding to the substrate 28 below it. . The distance between the diffuser is and the substrate 28 can be adjusted from about 200 to 1000 mils (5-25 mm) to define the reaction area 34. The diffuser 18 feeds the mixed processing gas to the reaction zone 34. Via the bottom line 88, the inert gas (preferably argon) is used to clean the chamber fan garden under the plate of the susceptor 30 to prevent the reactive gas from expanding into the chamber 12 below the susceptor 30. The basic pressure in the chamber is about 10 millitorr. The exhaust system 14 is equipped with a throttle valve 8 6 which can adjust the pressure of the chamber 6 In the specific example of the method of the present invention, three gases and a non-reactive carrier gas are mixed in the gas mixing assembly 6 Argon, nitrogen or a mixture of argon and nitrogen), WFS and DCS. The supply valve 68 is opened, and WF0 is introduced into the gas mixing assembly 16 from the source 64 via the feed line 38. The WFs are preferably introduced into the gas mixture assembly 16 together with the non-Z reactive carrier gas, the supply valve 82 is opened, and the non-reactive carrier gas is delivered from the source 80. Open the supply valve 76. This paper size is in accordance with China National Standard (CNS) A4 specification (210 X 297 public love) f Please read the precautions on the back before filling this page) ^ 1 丨 t order -------- -Coil 4 b 9 5 1 9 A7
五、發明說明（9 ) 經由送料管路40將來自來源72之二氣錢導人氣體混合裝 配1 6。 (請先閱讀背面之注意事項再填寫本頁) 基於經濟因素，此處較佳之惰性載體氣體係氬，但是亦 可以使用其他惰性氣體。如上述，氮不可用於本發明澱積 方法，惟氮可用於預調整或是清潔該澱積室。 於圖2之氣體混合裝配1 6中，關閉閥5 〇與5 2，與出口混 合閥58與60，並開啓出口混合閥54與56以及轉向閥62， 進行該處理之混合作用。該等氣體於混合管路44中部分混 合，而且曼初經由轉向管路48流至排氣系統1 4，直到該流 安定爲止。安定化之後，關閉轉向62，並開啓出口混合閥 5 8與6 0。該部分混合氣體經由混合管路44回到送料管路 38與40，然後進入風室42 ’於此處完成混合作用。然後該 混合處理氣體經由擴散器1 8進入室1 2。 通常於約500- 600°C進行碎化鎢搬積作用，於約55〇°C爲佳 。澱積作用期間之壓力自約〇 . 3 _ 1 〇托耳，但是於約〇 . 7 -1 · 5托耳爲佳。 經濟部智慧財產局員工消費合作杜印製 在代表性澱積方法中，處理氣體流入室i 2之流速與該室 容積有關。就一種包括可用以處理直徑爲8吋（200毫米）半 導體晶圓之室的範例性裝置而言，代表性室容積約6升。直 徑6吋（150毫米）之半導體晶圓亦可於此種容積之室中處理 。就此種裝置而言，WF6之適當流速約1 - 6 seem，約3 . 5 seem爲佳。二氣矽烷以約130_300 seem之流速進入室12， 約175 seem爲佳。使用氬作爲載體氣體，並經由管路38， 以約100- 1000 sccm之流速進入室1 2。此氬流速排除底部清 "12- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 6 9 5 19 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（10 ) 潔流速，其約100-500 sccm，約300 sccin爲佳。調整各種流 速’如此製得電阻係數介於700與1400微歐姆-厘米之WSix 層’電阻係數約800微歐姆-厘米爲佳。澱積作用於55〇ι與 1托耳下進行最佳。 該澱積處理完成之後且於SiHU清潔步驟開始之前，使用 DCS進行一選擇性部分清潔步驟爲佳。只要關閉供應閥68 °停止WF0流入澱積室12’同時使先前之DCS與氬流入室 1 2 ’即爲進行該選擇性DCS清潔步驟。該選擇性DCS清潔 作用進行0玉約5秒，約2 - 3秒爲佳。此選擇性清潔步驟期 間之DCS流速約爲130至300 seem，約175 seem爲佳。較佳之 溫度如澱積步驟所示。 該選擇性DCS清潔步驟有助於去除氣體混合裝配之任何殘 留WFe。此舉確使不會與氣體混合裝配1 6中之後續SiH4 流接觸。 該殿積處理與選擇性DCS部分清潔步驟之後，進行該^^4 或疋覆蓋步骤。關閉供應閥7 6，中止DCS自來源7 2流入 室1 2。若是未事先關閉供應閥6 8以中止WF6，其於此時關 閉。關閉圖2中所有混合閥5 4，5 6，5 8與6 0，並開啓5 〇與 5 2。開啓供應閥7 8，使SiH4自來源流出。供應閥8 2保持開 啓爲佳’使氬流繼續自來源8 0流出。然而，當與siH4混合 但是不改變澱積薄膜測得之應力時，可以氮代替氬或是與 氮混合。亦可使氬經語底部清潔管路8 8繼續入澱積室1 2爲 佳。來自SiH4來源7 4之SilLj經由送料管路40與閥52流入風 室4 2，因而流入室！ 2。將SiH4流導流經閥5 2再次有助於確 -13- 本紙張又度適"® ®家標準（CNS)A4規格（210 X 297公釐） -------— — — ^ ^-—ιίιιι^·ιιιυ---^ ^ (請先閱讀背面之注意事項再填寫本頁) 469519 A7 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（11 ) 使SifL*不會與可能殘留在氣體混合裝配！ 6中之任何％?6接 觸與反應。V. Description of the invention (9) Mix the gas introduced from the source 72bis into the gas mixture via the feed line 40 to assemble 16. (Please read the notes on the back before filling out this page) For economic reasons, the preferred inert carrier gas system is argon, but other inert gases can also be used. As described above, nitrogen cannot be used in the deposition method of the present invention, but nitrogen can be used to pre-adjust or clean the deposition chamber. In the gas mixing assembly 16 of FIG. 2, the valves 50 and 52 are closed, and the outlet mixing valves 58 and 60 are opened, and the outlet mixing valves 54 and 56 and the steering valve 62 are opened to perform the mixing function of the processing. These gases are partially mixed in the mixing line 44, and Manchu passes through the steering line 48 to the exhaust system 14 until the flow is stable. After stabilization, turn the steering 62 off and open the outlet mixing valves 58 and 60. This part of the mixed gas returns to the feeding lines 38 and 40 through the mixing line 44 and then enters the air chamber 42 'to complete the mixing effect. The mixed process gas then enters the chamber 12 via the diffuser 18. Shredded tungsten transfer is usually carried out at about 500-600 ° C, preferably at about 55 ° C. The pressure during the deposition is from about 0.3 to 10 Torr, but preferably from about 0.7 to 1.5 Torr. Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs for consumer cooperation. In a typical deposition method, the flow rate of the process gas into the chamber i 2 is related to the volume of the chamber. For an exemplary device that includes a chamber that can be used to process 8-inch (200 mm) semiconductor wafers, a representative chamber volume is about 6 liters. Semiconductor wafers with a diameter of 6 inches (150 mm) can also be processed in a chamber of this volume. For such a device, the appropriate flow rate of WF6 is about 1-6 seem, preferably about 3.5 seem. Digas silane enters chamber 12 at a flow rate of about 130_300 seem, preferably about 175 seem. Argon was used as the carrier gas, and entered the chamber 12 through the line 38 at a flow rate of about 100-1000 sccm. This argon flow rate excludes bottom cleaning " 12- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 4 6 9 5 19 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (10) The clean flow rate is about 100-500 sccm, preferably about 300 sccin. It is better to adjust various flow rates' to obtain a WSix layer having a resistivity between 700 and 1400 micro-ohm-cm. The resistivity is about 800 micro-ohm-cm. Deposition is best performed at 55 μm and 1 Torr. After the deposition process is completed and before the SiHU cleaning step begins, it is better to perform a selective partial cleaning step using DCS. As long as the supply valve is closed 68 ° to stop WF0 from flowing into the deposition chamber 12 'and the previous DCS and argon flowing chambers 1 2' are used, this selective DCS cleaning step is performed. The selective DCS cleaning action takes about 5 seconds, preferably about 2-3 seconds. The DCS flow rate during this selective cleaning step is about 130 to 300 seem, preferably about 175 seem. The preferred temperature is shown in the deposition step. This selective DCS cleaning step helps to remove any residual WFe from the gas-mixed assembly. This does not allow contact with subsequent SiH4 streams in the gas-mixed assembly 16. After the Dianji treatment and the selective DCS partial cleaning step, the ^^ 4 or 疋 coverage step is performed. The supply valve 76 is closed, and the DCS flow from the source 72 to the chamber 12 is stopped. If the supply valve 68 is not closed in advance to stop the WF6, it is closed at this time. Close all mixing valves 5 4, 5 6, 5 8 and 60 in Fig. 2 and open 50 and 52. The supply valve 78 is opened to allow SiH4 to flow from the source. The supply valve 82 is preferably kept open 'so that the argon flow continues to flow from the source 80. However, when mixed with siH4 without changing the measured stress of the deposited film, nitrogen can be used instead of argon or mixed with nitrogen. It is also preferable to continue the argon script bottom cleaning line 8 8 into the deposition chamber 12. SilLj from SiH4 source 7 4 flows into the air chamber 4 2 through the feeding pipe 40 and the valve 52, and thus flows into the chamber! 2. Diverting SiH4 flow through valve 5 2 again helps to confirm -13- This paper is again suitable " ® ® Home Standard (CNS) A4 specification (210 X 297 mm) ----------- ^ ^ -— ιίιιι ^ · ιιιυ --- ^ ^ (Please read the precautions on the back before filling out this page) 469519 A7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Invention Description (11) Make SifL * not Will mix with the gas that may remain! Any of 6% 6 contacts and reacts.
圖2之氣體混合裝配1 6的風室4 2保持介於約1 〇。(：與1 5 °C 之溫度爲佳，以避免SiH4分解。較佳之冷卻裝備包括一個 水套管（未顯示出來）。亦可使用其他冷卻裝備DThe air chamber 42 of the gas mixing assembly 16 of FIG. 2 remains between about 10%. (: It is better to use a temperature of 15 ° C to avoid the decomposition of SiH4. The preferred cooling equipment includes a water jacket (not shown). Other cooling equipment can also be used. D
SiH4清潔步驟進行自約1 〇至3 〇秒爲佳，約1 5秒更佳。 SilLt流入澱積室12之總流速約1〇〇至500 seem爲佳，約300 seem更佳。SiKU清潔期間，澱積室1 2内之總室壓保持約〇 5 至1.0托耳爲佳，約0，7托耳更佳。SiH.4清潔期間之溫度約 500- 600°C爲佳，約550°C更佳。該溫度與進行澱積步驟之 溫度大約相同爲佳。The SiH4 cleaning step is preferably performed from about 10 to 30 seconds, and more preferably about 15 seconds. The total flow rate of SilLt into the deposition chamber 12 is preferably about 100 to 500 seem, and more preferably about 300 seem. During SiKU cleaning, the total chamber pressure in the deposition chamber 12 is preferably maintained at about 0.5 to 1.0 Torr, and more preferably about 0,7 Torr. The temperature during SiH.4 cleaning is preferably about 500-600 ° C, and more preferably about 550 ° C. This temperature is preferably about the same as the temperature at which the deposition step is performed.
SiKU清潔步驟期間’氬底部清潔流速保持約至 seem爲佳，約300 seem更佳。During the SiKU cleaning step, the argon bottom cleaning flow rate is preferably maintained to approximately seem, and more preferably approximately 300 seem.
SiH4清潔步驟完成時’自澱積室丨2、氣體混合裝配丨6與 送料管路3 8和4 0去除SiH4。關閉閥52，並開啓混合閥56與 轉向閥6 2。DCS(其與氬或氮混合爲佳）通過送料管路4〇與 轉向管路4 8，至排氣系統1 4約5至丨〇秒，約$秒爲佳，以 清潔殘留SiH4。此步驟期間，DCS不進入澱積室i 2。 其次，使氳或氮流或是其混合物進入室丨2約5至丨秒，約 5秒爲佳，以去除該室之殘留Sih。最後，將澱積室12與所 有反應性氣體送料管路泵拙至所使用之泵的基本壓力（約5 至15毫托耳爲佳）。參考前述步驟，在上述溫度範圍内進行 前述SiH4去除方法爲佳。 於此時完成清潔處理，基板28已經可以自澱積室移除。 (請先閱讀背面之注意事項再填寫本頁) 裝.-------訂--------線人 -14- 469519 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（12 ) 可以習用裝備定期清潔室12，諸如使用諸如^|匕氣體之電 衆清潔方法。開啟供應閥7 0、關閉混合閥5 4與5 8，並使清 /絜氧體流經閥5 0 ’可以自來源6 6將該清潔氣體供應至室1 2 °視情況需要’可以習用方式併用該清潔氣體與—種惰性 載體氣體。 根據本發明’可於澱積作用之前以及澱積作用之後將 S1H4導入真空處理裝置之室内。於澱積步驟之前，將經由 管路4 0將S iH4導入澱積室12進行此初始室調整步驟或是“ 砂烷浸潰” r騾為佳。開啟閥5 2，所有其他閥仍然關閉。 氬底部清潔作用與SiH4步騾同時進行為佳。氬流速約ι〇〇 至5〇〇 seem為佳，約300 seem更佳。 該SiH4浸潰步驟於基板2 8導入澱積室1 2之後進行為佳。 SiH4與進行後續SiH4清潔步騾所使用之非反應性氣體（諸如 氮或一種惰性氣體或是氮與一種惰性氣體例如氬之組合物） 併用導入澱積室1 2為佳。該S1H4浸潰步驟進行約丨5秒至1 分鐘為佳’約3 0秒更佳。假設室容積約6升，siH4流入澱積 室1 2之流速約100至500 seem為佳，约300 seem更佳。調整 步驟期間之室壓力約1至10托耳為佳，約2托耳更佳。 視SiHU流速與室壓力二者而定調整時間。因此，室壓力 為1 〇托耳且SiH4流速為500 seem之最少時間係1 5秒。於2托 耳1流速300下，約3 0秒已足夠。 調整步驟期間之溫度通常與澱積步驟所使用溫度相同， 約500-600°C，約550°C更佳。然而，因為SiH4即使於室溫 (25(TC )下仍然容易分解’所以該調整步騾不需要最小溫度。 -15- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） _------------—"裝--------訂---------線 i <請先閱讀背面之注意事項再填寫本頁) A7 Γ -----一 波…---I--訂—----線丄 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消费合作社印製 46 95 19 ____________B7_ 五、發明說明（13 ) 該調整步驟可與SiH4清潔步驟合併或是獨立進行。 於DCS澱積步骤之前，如上述調整澱積室12，可以獲得 更均勻wsix澱積作用。-般認爲SlH4可以作爲起始殿積作 用之觸媒，亦可於DCS澱積處理之前，將一種薄多晶矽層 添加於半導體晶圓表面。因此，進行8出4浸漬步驟最佳。 然而，於高溫下（例如約“^匸）下進行該DCS澱積處理時， 可以省略SiH4浸潰步驟。 包括S1H41周整步驟、DCS澱積步驟，以及SiH4清潔步驟之 範例方法示—终圖5。 以下列非限制性實例說明本發明。 實施例1 本實施例中，以WSix澱積兩個8吋半導體晶圓。根據習用 碎燒方法且無矽烷覆蓋處理第—晶圓。如下，根據Dcs方 法，並進行如本發明SiH4浸潰與隨後SiH4覆蓋步驟，處理第 二晶圓。 最初，將晶圓導入一個6升眞空澱積室中，將SiH4( 3〇〇 seem)導入該室，伴隨氬（300 sccm)作爲載體氣體。以氬 (300 seem)同時清潔該室底部。於2托耳下進行SiH4浸潰步 驟3 0秒。 隨後，於該室内將晶圓加熱至565°C。經由一個擴散器將 WF6(3.5 scctn)、DCS(175 sccm)與氬（600 sccm)導入該室。 以氬（300 seem)清潔該室底部。室壓爲〇 8托耳。進行 澱積作用110秒。 該澱積作用完成之後，進行矽烷覆蓋步驟1 5秒。總處理 16, ^紙張疋度適用中國國家標率（CNS)A4規格（210 X 297公釐）" ------ 469519 經濟部智慧財產局員工消費合作社中製 A7 ..... " B7 五、發明說明（14 ) 時間為3分鐘。 然後，使用Tencor FLX_29〇8薄膜應力測量儀（由Tenc〇r InSUu^ntS所售）測量各晶圓上WSix之應力。在6小時期間， 於氣氣氛下將各晶圓加熱至9〇〇t。該晶圓保持9〇〇。〇3〇分 鐘，然後逐漸冷卻至室溫（2VC)。於加熱與冷卻期間測量 各薄膜中之應力。結果分別示於圖3與4中。 圖3與4之對照顯不出根據本發明所達成之意料外改良。 在包括一般用以進行澱積處理之溫度範圍（5〇〇—6〇〇t：)内， 根據本發明_所製得之範例薄膜顯示出其應力明顯低於根據 先前習知DCS處理所形成之對照薄膜。 更特別的是，根據習知與本發明方法二者所製得之 薄膜顯示出，於薄膜退火與然後之冷卻期間，其應力滯後 。在根據本發明所製得之範例薄膜（圖4)中，在自室溫至約 600°C之溫度範圍内，加熱期間所測得之應力低於冷卻期間 之應力。介於約400 C與6〇〇°C間’應力稍微變化a圖3之對 照薄膜中，於約200eC時，加熱期間測得之應力變得高於冷 卻期間測得者’而且當溫度高達675°C時仍然較高。 圖4之範例薄膜亦與圖3之對照薄膜不同，其中在約4〇〇。匚 至約50CTC之溫度範圍内時，該薄膜應力顯示出負值。即， 在前述溫度範圍内’該範例薄膜顯示出壓縮力而非張力， 然而對照薄膜一直顯示出張力。 於約600°C時，該範例薄膜顯示局部最大應力，與對照薄 膜相同。然而，該範例薄膜中’於此溫度下測得之應力遠 低於對照薄膜之應力°此外，在高於约60(TC之溫度範園中 •17- 本紙張尺度適用令國國家標準（CNS)A4規格（210x297公荣） rl — l· — ··——!^·^ 1 I 1 1 I I — 訂111!1 — (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 6 9 5 19 A7 I-------- B7 五、發明說明（15 ) ’加熱期間該對照薄膜所顯示之應力改變速率與應力總減 少値遠大於範例薄膜所示之値。亦即，在此溫度範圍内， 範例薄膜電阻顯示應力之轉變較爲平順。 雖然不希望受任何特定理論限制，但是本發明人相信可 以如下解釋根據本發明方法製得之薄膜表現。wsix薄膜爲 兩相混合物，六方形與四方形。於退火期間，當該溫度高 提高至自約400°C至700°C之範園時，該六方形相會轉換成 四方形相。於約900X：時，該薄膜大體上完全包括四方形相 。由此點^知，不論以習用方法或是本發明方法製造， WSixS冷卻時表現得相同。 於加熱時觀察到該薄膜中之應力降低，直到到達玻璃化 溫度範圍爲止，此時随著相轉換開始，應力也開始提高。 在根據本發明方法所製得之薄膜中，開始退火處理時之應 力遠低於先則技藝所製得之薄膜中的應力。於預轉換加熱 期間，該應力仍然底於先前技藝薄膜，如所示，而且在此 制度下可假設爲零甚至負（壓縮）値，惟根據本發明所製造 之每片薄膜不一定要呈負値。 一般認爲根據本發明方法製造之薄膜所示的應力降低可 如下述達成。當SiH4清潔該室時’該處理半導體晶圓留在 該室中。SiH4與晶圓表面上之殘留鎢原子反應，以及與殘 留WFe反應，因而在DCS澱積處理期間所形成之層上形 度大約卜2埃之富含碎WSlx.(因此，SiH4步驟或者稱爲“覆 蓋”步騍）。該反應將矽添加於薄膜顆粒邊界之薄膜上，並 填滿薄膜中之孔，因此釋放該薄膜中之應力。另外，相信 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ：----„--------------- - - 訂----1線x (請先閱讀背面之注意事項再填寫本頁) 46 95 19 。 A7 _________ B7 五、發明說明（16 )When the SiH4 cleaning step is completed, 'SiH4 is removed from the deposition chamber 2, the gas mixing assembly 6, and the feed lines 38 and 40. The valve 52 is closed, and the mixing valve 56 and the steering valve 62 are opened. DCS (which is preferably mixed with argon or nitrogen) passes through the feed line 40 and the steering line 48 to the exhaust system 14 for about 5 to 10 seconds, preferably about $ seconds to clean the residual SiH4. During this step, the DCS does not enter the deposition chamber i 2. Secondly, the radon or nitrogen stream or a mixture thereof is allowed to enter the chamber for about 5 to 5 seconds, preferably about 5 seconds, to remove residual Sih in the chamber. Finally, the deposition chamber 12 and all the reactive gas feed lines are pumped to the basic pressure of the pump used (preferably about 5 to 15 millitorr). Referring to the foregoing steps, it is preferable to perform the foregoing SiH4 removal method in the above-mentioned temperature range. At this time, the cleaning process is completed, and the substrate 28 can be removed from the deposition chamber. (Please read the precautions on the back before filling out this page) Packing .------- Order -------- Informer-14- 469519 Printed by A7 B7, Staff Consumer Cooperative, Intellectual Property Bureau, Ministry of Economic Affairs 2. Description of the invention (12) It is customary to equip the room 12 with regular cleaning, such as using electric cleaning methods such as gas. Open the supply valve 7 0, close the mixing valves 5 4 and 5 8 and let the scavenging / oxygen gas flow through the valve 5 0 'can supply the clean gas from the source 6 6 to the chamber 1 2 ° as needed' can be used in a customary way And use the cleaning gas and an inert carrier gas. According to the present invention, S1H4 can be introduced into the chamber of the vacuum processing apparatus before and after the deposition. Prior to the deposition step, SiH4 will be introduced into the deposition chamber 12 via the pipeline 40 to perform this initial chamber adjustment step or "salt immersion" r 骡. Open valve 5 2 and all other valves remain closed. It is better to perform argon bottom cleaning simultaneously with SiH4 step. The argon flow rate is preferably about 500,000 to 500 seem, and more preferably about 300 seem. The SiH4 immersion step is preferably performed after the substrate 28 is introduced into the deposition chamber 12. SiH4 and the non-reactive gas (such as nitrogen or an inert gas or a combination of nitrogen and an inert gas such as argon) used in the subsequent SiH4 cleaning step are preferably introduced into the deposition chamber 12. The S1H4 impregnation step is preferably performed for about 5 seconds to 1 minute 'and more preferably about 30 seconds. Assuming a chamber volume of about 6 liters, the flow rate of siH4 into the deposition chamber 12 is preferably about 100 to 500 seem, and more preferably about 300 seem. The chamber pressure during the adjustment step is preferably about 1 to 10 Torr, and more preferably about 2 Torr. The adjustment time depends on both the SiHU flow rate and the chamber pressure. Therefore, the minimum time for a chamber pressure of 10 Torr and a SiH4 flow rate of 500 seem is 15 seconds. At a flow rate of 300 to 2 Torr, about 30 seconds is sufficient. The temperature during the adjustment step is usually the same as that used in the deposition step, about 500-600 ° C, more preferably about 550 ° C. However, because SiH4 is still easy to decompose even at room temperature (25 (TC)), this adjustment step does not require a minimum temperature. -15- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) _------------— " installation -------- order --------- line i < Please read the precautions on the back before filling in this page ) A7 Γ ----- a wave ... --- I--order ------ line 丄 (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau Staff Consumer Cooperatives 46 95 19 ____________B7_ V. Description of the Invention (13) This adjustment step can be combined with the SiH4 cleaning step or performed independently. Before the DCS deposition step, the deposition chamber 12 is adjusted as described above to obtain a more uniform wsix deposition effect. -Generally speaking, SlH4 can be used as a catalyst for initial deposition, or a thin polycrystalline silicon layer can be added to the surface of the semiconductor wafer before DCS deposition. Therefore, it is best to perform the 8-out-4 immersion step. However, when the DCS deposition process is performed at a high temperature (for example, about ^ 匸), the SiH4 immersion step can be omitted. Examples of methods including the S1H41 rounding step, the DCS deposition step, and the SiH4 cleaning step are shown in the final figure. 5. The present invention is illustrated by the following non-limiting examples. Example 1 In this example, two 8-inch semiconductor wafers were deposited with WSix. The first wafer was processed according to the conventional burn-in method without silane coverage. As follows, according to The Dcs method, and performing the SiH4 immersion and subsequent SiH4 covering steps according to the present invention, process the second wafer. Initially, the wafer is introduced into a 6-liter hollow deposition chamber, and SiH4 (300seem) is introduced into the chamber. Accompany with argon (300 sccm) as the carrier gas. Clean the bottom of the chamber with argon (300 seem) at the same time. SiH4 impregnation step was performed at 2 Torr for 30 seconds. Subsequently, the wafer was heated to 565 ° C in the chamber. WF6 (3.5 scctn), DCS (175 sccm) and argon (600 sccm) were introduced into the chamber via a diffuser. The bottom of the chamber was cleaned with argon (300 seem). The chamber pressure was 0 8 Torr. Deposition was performed 110 After the deposition is completed, a silane coating is performed. Step 15 seconds. Total processing 16, ^ Paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) " ------ 469519 Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives A7 ..... &B; B7 V. Description of the invention (14) Time is 3 minutes. Then, Tencor FLX_29〇8 thin film stress measuring instrument (sold by Tencor InSUu ^ ntS) was used to measure the stress of WSix on each wafer. During 6 hours, each wafer was heated to 900t under a gas atmosphere. The wafer was held at 900.03 minutes, and then gradually cooled to room temperature (2VC). Measured during heating and cooling The stress in each film. The results are shown in Figures 3 and 4, respectively. The comparison of Figures 3 and 4 does not show the unexpected improvement achieved according to the present invention. Including the temperature range (50 〇-6〇〇〇 :), the example film prepared according to the present invention shows that its stress is significantly lower than the control film formed by the conventional DCS treatment. More particularly, according to the conventional and the present invention The films prepared by both methods show that during the film annealing and subsequent cooling period The stress lags. In the example film (FIG. 4) prepared according to the present invention, in a temperature range from room temperature to about 600 ° C, the stress measured during heating is lower than the stress during cooling. The stress changes slightly between about 400 C and 600 ° C. In the control film of Figure 3, at about 200eC, the stress measured during heating becomes higher than that measured during cooling 'and when the temperature reaches 675 ° C Time is still high. The example film of FIG. 4 is also different from the control film of FIG. 3, in which it is about 400. In the temperature range of 匚 to about 50CTC, the film stress shows a negative value. That is, in the aforementioned temperature range ', this exemplary film showed a compressive force instead of a tension, but the control film consistently showed a tension. At about 600 ° C, this example film shows local maximum stress, which is the same as the control film. However, in this example film, the stress measured at this temperature is much lower than that of the control film. In addition, at a temperature higher than about 60 (TC in the temperature range of the garden • 17- This paper applies the national standard (CNS) ) A4 size (210x297 Gongrong) rl — l · — ·· ——! ^ · ^ 1 I 1 1 II — Order 111! 1 — (Please read the notes on the back before filling out this page) Intellectual Property Bureau, Ministry of Economic Affairs Printed by the employee consumer cooperative 4 6 9 5 19 A7 I -------- B7 V. Description of the invention (15) 'The stress change rate and total stress reduction displayed by the control film during heating are much larger than those of the example film That is, in this temperature range, the exemplary thin film resistor shows a smoother transition in stress. Although not wishing to be bound by any particular theory, the inventor believes that the performance of the thin film made according to the method of the present invention can be explained as follows .Wsix film is a two-phase mixture, hexagonal and square. During the annealing, when the temperature rises to about 400 ° C to 700 ° C, the hexagonal phase will transform into a square phase. At about 900X : When the film is almost completely Including the square phase. From this point, it is known that whether manufactured by the conventional method or the method of the present invention, WSixS behaves the same when cooled. It is observed that the stress in the film decreases during heating until the glass transition temperature range is reached, at this time As the phase transition begins, the stress also starts to increase. In the film produced according to the method of the present invention, the stress at the beginning of the annealing process is much lower than that in the film produced by the prior art. The stress is still at the bottom of the prior art film, as shown, and under this system it can be assumed to be zero or even negative (compressed), but each film manufactured according to the present invention does not have to be negative. The stress reduction shown by the thin film produced by the method of the present invention can be achieved as follows. When the SiH4 cleans the chamber, 'the processed semiconductor wafer remains in the chamber. SiH4 reacts with residual tungsten atoms on the wafer surface and with residual WFe Reaction, and thus the shape of the layer formed during the DCS deposition process is about 2 Angstroms rich in WS1x. (Hence the SiH4 step, or "cover" step). This Silicon should be added to the film at the boundary of the film particles and fill the holes in the film, so the stress in the film is released. In addition, it is believed that this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ： ---- „-----------------Order ---- 1 line x (Please read the precautions on the back before filling out this page) 46 95 19. A7 _________ B7 V. Description of Invention (16)
SiH4清潔可能致使薄膜電阻稍微提高。 實施例2 測量根據習用與上述實施例1所述之發明方法處理的半導 體晶圓薄膜電阻。在該晶圓表面上49個不同位置測量薄膜 電阻値，並計算平均値與該測量値之標準差。此處之標準 差意指薄膜電阻之“均勻度”。因此，高度‘‘均勻度”表示晶 圓表面各個位置之薄膜電阻變異大。 圖ό A與6 B分別顯示習用方法與本發明方法之薄膜電阻短 期變動（以歐:姆/平方計），以及2 5片晶圓之均勻度（φ )。習 用方法測得之薄膜電阻自3 1下降至2 9歐姆/平方，降低约2 歐姆/平方（6.5 %)。就發明方法’該薄膜電阻自44.4變動至 44,6歐姆/平方，其在實驗誤差内。習用方法之均句度自約 1.7變化至2.4% ;而發明方法中’該變化自約丨83〇/〇至 1.75%。很明顯地，本發明方法提供明顯降低之薄膜電阻短 期下降趨勢。 圖6 C與6 D分別顯示習用方法與本發明方法對應之薄膜電 阻長期變動以及500片晶圓之均勻度。測量每批25片晶圓中 第一片晶圓之薄膜電阻。處理25片晶圓後，清潔該眞空澱 積室，並對接下來的2 5片晶圓重複該方法^ 經濟部智慧財產局ooc工消費合作社印製 就習用方法而言，薄膜電阻自3 1變化至2 7歐姆/平方， 下降約4歐姆/平方（約！ 3%)。就發明方法而言，薄膜電阻 自44.5變化至43歐姆/平方，下降約15歐姆/平方（約3%) 。觀察到習用方法之均勻度自約2 %至3 . 5 % ;本發明方法 之變化自約1%至1，8%，未觀察到向上或向下趨勢。因此 -19- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱）SiH4 cleaning may cause a slight increase in sheet resistance. Example 2 The sheet resistance of a semiconductor wafer processed according to the conventional and the inventive method described in Example 1 above was measured. The film resistance 値 was measured at 49 different positions on the wafer surface, and the standard deviation of the average 値 and the measurement 値 was calculated. The standard deviation here means the "uniformity" of the thin film resistor. Therefore, the height "uniformity" indicates that the sheet resistance varies greatly at various positions on the surface of the wafer. Figures A and 6B show the short-term variation (in ohms / square) of the sheet resistance of the conventional method and the method of the invention, respectively, and 25 uniformity (φ) of 5 wafers. The sheet resistance measured by conventional methods has dropped from 31 to 29 ohms per square, which is about 2 ohms per square (6.5%). According to the method of the invention, 'the sheet resistance is from 44.4 It changes to 44,6 ohms / square, which is within the experimental error. The average sentence degree of the conventional method changes from about 1.7 to 2.4%; while in the invented method, the change is from about 8300/0 to 1.75%. Obviously The method of the present invention provides a significantly reduced short-term downward trend in sheet resistance. Figures 6C and 6D show the long-term variation of sheet resistance and the uniformity of 500 wafers corresponding to the conventional method and the method of the present invention. Measure 25 wafers per batch Thin film resistor in the first wafer. After processing 25 wafers, clean the empty deposition chamber and repeat the method for the next 25 wafers ^ Printed by the Occupational Cooperative Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Method, thin film The resistance changed from 31 to 27 ohms / square, and dropped by about 4 ohms / square (about! 3%). As for the method of the invention, the film resistance changed from 44.5 to 43 ohms / square, and dropped by about 15 ohms / square (about 3%). The uniformity of the conventional method was observed from about 2% to 3.5%; the variation of the method of the present invention was from about 1% to 1.8%, and no upward or downward trend was observed. Paper size applies to China National Standard (CNS) A4 (210 X 297 public love)
五、發明說明（17 469519 ”習用万去相較’本發明方法明顯降低之薄膜電阻長期 下降趨勢，以及經改良均勻度。 此卜處理500片晶圓之後，習用方法需要將澱積期間之 壓力向上調整至約i 2托耳，以製造具有可接受薄膜電阻對 殺積薄膜。本發明方法中不需要此種向上調整。 雖然主要參考一種DCS方法説明本發明，但是本發明不受 限於DCS方法或是將WSix殿積於—種基板上之方法的應用 性。該SiH4調整與清潔步骤可與其他澱積方法併用，特別 是將—種㈣材料殿積在-種基板上之方法。此等材料包 括例如 TiSix ' CoSix、TiCoSij。 根據本發明方法處理半導體晶圓會使薄膜電阻之短期與 長期下降趨勢明顯降低，而且可以製造更均句晶圓。此外 ，本發明使經處理半導體晶圓具有明顯降低之薄膜應力。 雖然前文有關本發明較佳具體實例，但是在不違背基本 範圍之下，可衍生出本發明其他與額外之具體實例，本發 明範園係由下列申請專利範圍所界定。 -1 ♦裝--------訂---------線丄 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 '20- 本紙張尺度適用争國國家標準（CNS>A4規格（210 X 297公爱） 46 95 19 π；第对號專利案和年「口厂修正V. Description of the invention (17 469519 "Compared with the method of the present invention, the long-term decreasing trend of the film resistance significantly reduced by the method of the present invention, and the improved uniformity. After processing 500 wafers, the conventional method requires the pressure during deposition to be reduced. Adjust upwards to about 2 Torr to make a film with acceptable sheet resistance versus killing film. This upward adjustment is not required in the method of the invention. Although the invention is primarily described with reference to a DCS method, the invention is not limited to DCS The method or the applicability of the method of depositing WSix on a substrate. The SiH4 adjustment and cleaning steps can be used in combination with other deposition methods, especially the method of depositing a plutonium material on a substrate. Such materials include, for example, TiSix 'CoSix, TiCoSij. Processing semiconductor wafers according to the method of the present invention will significantly reduce the short-term and long-term decline in thin film resistance, and can produce more uniform wafers. In addition, the present invention enables processed semiconductor wafers to be processed. Has a significantly reduced film stress. Although the foregoing relates to the preferred embodiment of the present invention, it can be used without departing from the basic scope. Given other and additional specific examples of the present invention, the scope of the present invention is defined by the scope of the following patent applications: -1 ------------------------ (Please read the notes on the back and fill in this page again) Dumplings produced by the Intellectual Property Bureau of the Ministry of Economic Affairs, “20- This paper size applies to the national standard of the country (CNS > A4 specification (210 X 297 public love) 46 95 19 π; Patent cases and amendments
圖 號 對 照 說 明： 10 CVD 系 統 1 2澱 積 室 14 抽 真 空 系 統 16氣 體 混 合 裝 配 18 擴 散 器 2 0晶 圓 提 吊 裝 置 22 擋 板 24提 吊 機 械 手 2 6 感 受 器 提 吊裝置 28基 板 3 0 感 受 器 3 2加 熱 裝 備 3 4 救 積 或 反 應區 3 6矽 英 視 窗 3 8 送 料 管 路 4 0送 料 管 路 4 2 風 室 4 4混 合 管 路 46 混 合 管 路 48輸 送 管 路 5 0 閥 5 2閥 5 4 入 口 混 合 閥 5 6入 混 合 閥 5 8 出 口 混 合 閥 60出 口 混 合 閥 62 轉 向 閥 64 WF6； 來; 原 66 NF3 清 '1 紫氣體來源 68供 應 閥 7 0 供 應 閥 72 DCS 來 源 7 4 Si 心來 源 7 6供 應 閥 I---.-------1 ^--------訂---------^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧时產局具工消費合作社印製 路 閥閥管 應應部 供供— 源 來 體 氣 性 應閥 反流 1EI*-卩 TVT- 斤 5¾ 本紙張尺度適用中國國家標準（CNS)A4規格（210^297公g )Comparative description of drawing numbers: 10 CVD system 1 2 deposition chamber 14 vacuum system 16 gas mixing assembly 18 diffuser 2 0 wafer lifting device 22 baffle 24 lifting robot 2 6 sensor lifting device 28 substrate 3 0 sensor 3 2 Heating equipment 3 4 Save or respond zone 3 6 Silicon window 3 8 Feeding line 4 0 Feeding line 4 2 Air chamber 4 4 Mixing line 46 Mixing line 48 Conveying line 5 0 Valve 5 2 Valve 5 4 inlet mixing valve 5 6 mixing valve 5 8 outlet mixing valve 60 outlet mixing valve 62 steering valve 64 WF6; come; original 66 NF3 clear '1 purple gas source 68 supply valve 7 0 supply valve 72 DCS source 7 4 Si core source 7 6 Supply valve I ---.------- 1 ^ -------- Order --------- ^ (Please read the precautions on the back before filling this page) The Ministry of Economic Affairs, the Ministry of Economic Affairs, the Bureau of Industrial and Industrial Cooperatives, printed road valve, valve pipe should be supplied by the source-the source gas pressure valve should be reversed 1EI *-卩 TVT- jin 5¾ This paper size applies to the Chinese national standard (CNS) A4 size (210 ^ 297 male g)
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31499999A | 1999-05-19 | 1999-05-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW469519B true TW469519B (en) | 2001-12-21 |
Family
ID=23222426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW89109668A TW469519B (en) | 1999-05-19 | 2000-05-19 | Utilization of SiH4 soak and purge in deposition processes |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1185723A1 (en) |
| JP (1) | JP2002544394A (en) |
| TW (1) | TW469519B (en) |
| WO (1) | WO2000070121A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10102742C1 (en) * | 2001-01-22 | 2002-09-12 | Promos Technologies Inc | Tungsten deposition process used in semiconductor manufacture comprises passing reactive mixed gas consisting of tungsten hexafluoride, silane and nitrogen through chamber to form tungsten crystal, and treating with silane and mixed gas |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0704551B1 (en) * | 1994-09-27 | 2000-09-06 | Applied Materials, Inc. | Method of processing a substrate in a vacuum processing chamber |
| JP3341619B2 (en) * | 1997-03-04 | 2002-11-05 | 東京エレクトロン株式会社 | Film forming equipment |
-
2000
- 2000-05-19 JP JP2000618524A patent/JP2002544394A/en active Pending
- 2000-05-19 EP EP00936088A patent/EP1185723A1/en not_active Withdrawn
- 2000-05-19 TW TW89109668A patent/TW469519B/en not_active IP Right Cessation
- 2000-05-19 WO PCT/US2000/013785 patent/WO2000070121A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1185723A1 (en) | 2002-03-13 |
| WO2000070121A1 (en) | 2000-11-23 |
| JP2002544394A (en) | 2002-12-24 |
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