DE69738681D1 - Verfahren zur Herstellung einer Anordnung mit Graben-MOS-Gate - Google Patents
Verfahren zur Herstellung einer Anordnung mit Graben-MOS-GateInfo
- Publication number
- DE69738681D1 DE69738681D1 DE69738681T DE69738681T DE69738681D1 DE 69738681 D1 DE69738681 D1 DE 69738681D1 DE 69738681 T DE69738681 T DE 69738681T DE 69738681 T DE69738681 T DE 69738681T DE 69738681 D1 DE69738681 D1 DE 69738681D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- mos gate
- gate arrangement
- trench mos
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/636,904 US5770878A (en) | 1996-04-10 | 1996-04-10 | Trench MOS gate device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69738681D1 true DE69738681D1 (de) | 2008-06-26 |
Family
ID=24553828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69738681T Expired - Lifetime DE69738681D1 (de) | 1996-04-10 | 1997-03-20 | Verfahren zur Herstellung einer Anordnung mit Graben-MOS-Gate |
Country Status (4)
Country | Link |
---|---|
US (2) | US5770878A (de) |
EP (1) | EP0801426B1 (de) |
JP (1) | JP4029946B2 (de) |
DE (1) | DE69738681D1 (de) |
Families Citing this family (105)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3502531B2 (ja) | 1997-08-28 | 2004-03-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JPH1174513A (ja) * | 1997-08-28 | 1999-03-16 | Nec Kansai Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
US6429481B1 (en) * | 1997-11-14 | 2002-08-06 | Fairchild Semiconductor Corporation | Field effect transistor and method of its manufacture |
US6225659B1 (en) | 1998-03-30 | 2001-05-01 | Advanced Micro Devices, Inc. | Trenched gate semiconductor device and method for low power applications |
US5990515A (en) * | 1998-03-30 | 1999-11-23 | Advanced Micro Devices, Inc. | Trenched gate non-volatile semiconductor device and method with corner doping and sidewall doping |
US6097061A (en) * | 1998-03-30 | 2000-08-01 | Advanced Micro Devices, Inc. | Trenched gate metal oxide semiconductor device and method |
US6285054B1 (en) | 1998-03-30 | 2001-09-04 | Advanced Micro Devices, Inc. | Trenched gate non-volatile semiconductor device with the source/drain regions spaced from the trench by sidewall dopings |
US6194741B1 (en) * | 1998-11-03 | 2001-02-27 | International Rectifier Corp. | MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance |
US6222231B1 (en) * | 1999-02-25 | 2001-04-24 | Kabushiki Kaisha Toshiba | Semiconductor device of high breakdown voltage using semiconductive film and its manufacturing method |
US6706604B2 (en) * | 1999-03-25 | 2004-03-16 | Hitachi, Ltd. | Method of manufacturing a trench MOS gate device |
US6413822B2 (en) | 1999-04-22 | 2002-07-02 | Advanced Analogic Technologies, Inc. | Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer |
US6198127B1 (en) * | 1999-05-19 | 2001-03-06 | Intersil Corporation | MOS-gated power device having extended trench and doping zone and process for forming same |
US6291298B1 (en) | 1999-05-25 | 2001-09-18 | Advanced Analogic Technologies, Inc. | Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses |
US7084456B2 (en) * | 1999-05-25 | 2006-08-01 | Advanced Analogic Technologies, Inc. | Trench MOSFET with recessed clamping diode using graded doping |
US6383871B1 (en) * | 1999-08-31 | 2002-05-07 | Micron Technology, Inc. | Method of forming multiple oxide thicknesses for merged memory and logic applications |
US6245615B1 (en) * | 1999-08-31 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
US20030060013A1 (en) * | 1999-09-24 | 2003-03-27 | Bruce D. Marchant | Method of manufacturing trench field effect transistors with trenched heavy body |
US6265304B1 (en) * | 1999-10-05 | 2001-07-24 | Advanced Micron Devices, Inc. | Controlling an etching process of multiple layers based upon thickness ratio of the dielectric layers |
US6285057B1 (en) * | 1999-11-17 | 2001-09-04 | National Semiconductor Corporation | Semiconductor device combining a MOSFET structure and a vertical-channel trench-substrate field effect device |
US6271080B1 (en) | 1999-12-16 | 2001-08-07 | International Business Machines Corporation | Structure and method for planar MOSFET DRAM cell free of wordline gate conductor to storage trench overlay sensitivity |
US6246090B1 (en) * | 2000-03-14 | 2001-06-12 | Intersil Corporation | Power trench transistor device source region formation using silicon spacer |
TW479363B (en) * | 2000-03-17 | 2002-03-11 | Gen Semiconductor Inc | Trench DMOS transistor having a double gate structure |
DE10026924A1 (de) * | 2000-05-30 | 2001-12-20 | Infineon Technologies Ag | Kompensationsbauelement |
US6921939B2 (en) * | 2000-07-20 | 2005-07-26 | Fairchild Semiconductor Corporation | Power MOSFET and method for forming same using a self-aligned body implant |
US6444528B1 (en) | 2000-08-16 | 2002-09-03 | Fairchild Semiconductor Corporation | Selective oxide deposition in the bottom of a trench |
US6437386B1 (en) | 2000-08-16 | 2002-08-20 | Fairchild Semiconductor Corporation | Method for creating thick oxide on the bottom surface of a trench structure in silicon |
US6696726B1 (en) | 2000-08-16 | 2004-02-24 | Fairchild Semiconductor Corporation | Vertical MOSFET with ultra-low resistance and low gate charge |
US7745289B2 (en) | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
US6611037B1 (en) * | 2000-08-28 | 2003-08-26 | Micron Technology, Inc. | Multi-trench region for accumulation of photo-generated charge in a CMOS imager |
US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
US6818513B2 (en) * | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
FI120310B (fi) * | 2001-02-13 | 2009-09-15 | Valtion Teknillinen | Parannettu menetelmä erittyvien proteiinien tuottamiseksi sienissä |
US6445194B1 (en) | 2001-02-16 | 2002-09-03 | International Business Machines Corporation | Structure and method for electrical method of determining film conformality |
DE10114956C2 (de) | 2001-03-27 | 2003-06-18 | Infineon Technologies Ag | Verfahren zum Herstellen einer dielektrischen Schicht als Isolatorschicht für einen Grabenkondensator |
JP4073176B2 (ja) * | 2001-04-02 | 2008-04-09 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
US6657256B2 (en) * | 2001-05-22 | 2003-12-02 | General Semiconductor, Inc. | Trench DMOS transistor having a zener diode for protection from electro-static discharge |
US7009247B2 (en) | 2001-07-03 | 2006-03-07 | Siliconix Incorporated | Trench MIS device with thick oxide layer in bottom of gate contact trench |
US7033876B2 (en) | 2001-07-03 | 2006-04-25 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same |
US6709930B2 (en) * | 2002-06-21 | 2004-03-23 | Siliconix Incorporated | Thicker oxide formation at the trench bottom by selective oxide deposition |
US6764906B2 (en) | 2001-07-03 | 2004-07-20 | Siliconix Incorporated | Method for making trench mosfet having implanted drain-drift region |
US7291884B2 (en) | 2001-07-03 | 2007-11-06 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide |
US6849898B2 (en) | 2001-08-10 | 2005-02-01 | Siliconix Incorporated | Trench MIS device with active trench corners and thick bottom oxide |
WO2003015180A2 (en) * | 2001-08-10 | 2003-02-20 | Siliconix Incorporated | Mis device having a trench gate electrode and method of making the same |
US6765247B2 (en) * | 2001-10-12 | 2004-07-20 | Intersil Americas, Inc. | Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action |
US6559014B1 (en) * | 2001-10-15 | 2003-05-06 | Advanced Micro Devices, Inc. | Preparation of composite high-K / standard-K dielectrics for semiconductor devices |
US7061066B2 (en) | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
US6674124B2 (en) * | 2001-11-15 | 2004-01-06 | General Semiconductor, Inc. | Trench MOSFET having low gate charge |
TW511297B (en) * | 2001-11-21 | 2002-11-21 | Mosel Vitelic Inc | Manufacture method of DMOS transistor |
US6781196B2 (en) * | 2002-03-11 | 2004-08-24 | General Semiconductor, Inc. | Trench DMOS transistor having improved trench structure |
US6784505B2 (en) * | 2002-05-03 | 2004-08-31 | Fairchild Semiconductor Corporation | Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique |
US7012005B2 (en) * | 2002-06-25 | 2006-03-14 | Siliconix Incorporated | Self-aligned differential oxidation in trenches by ion implantation |
US8080459B2 (en) * | 2002-09-24 | 2011-12-20 | Vishay-Siliconix | Self aligned contact in a semiconductor device and method of fabricating the same |
US7033891B2 (en) | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
GB0229210D0 (en) | 2002-12-14 | 2003-01-22 | Koninkl Philips Electronics Nv | Method of manufacture of a trench semiconductor device |
TWI223448B (en) * | 2003-04-29 | 2004-11-01 | Mosel Vitelic Inc | DMOS device having a trenched bus structure |
US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
KR100994719B1 (ko) * | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
JP4059846B2 (ja) * | 2003-12-26 | 2008-03-12 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
US20050199918A1 (en) * | 2004-03-15 | 2005-09-15 | Daniel Calafut | Optimized trench power MOSFET with integrated schottky diode |
EP1761953A4 (de) * | 2004-06-30 | 2009-02-25 | Advanced Analogic Tech Inc | Graben-mosfet mit ausgesparter klemmdiode |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
US20060108635A1 (en) * | 2004-11-23 | 2006-05-25 | Alpha Omega Semiconductor Limited | Trenched MOSFETS with part of the device formed on a (110) crystal plane |
CN101882583A (zh) | 2005-04-06 | 2010-11-10 | 飞兆半导体公司 | 沟栅场效应晶体管及其形成方法 |
JP5008046B2 (ja) * | 2005-06-14 | 2012-08-22 | ローム株式会社 | 半導体デバイス |
US20070157516A1 (en) * | 2006-01-09 | 2007-07-12 | Fischer Bernhard A | Staged modular hydrocarbon reformer with internal temperature management |
US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
CN101536164B (zh) * | 2006-09-27 | 2012-06-20 | 巨能半导体股份有限公司 | 具有凹陷场板的功率金属氧化物半导体场效应晶体管 |
US7705426B2 (en) * | 2006-11-10 | 2010-04-27 | International Business Machines Corporation | Integration of a SiGe- or SiGeC-based HBT with a SiGe- or SiGeC-strapped semiconductor device |
JP2007043209A (ja) * | 2006-11-15 | 2007-02-15 | Mitsubishi Electric Corp | トレンチ構造を有する半導体装置及びその製造方法 |
US9437729B2 (en) * | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
US9947770B2 (en) | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
CN101868856B (zh) | 2007-09-21 | 2014-03-12 | 飞兆半导体公司 | 用于功率器件的超结结构及制造方法 |
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1996
- 1996-04-10 US US08/636,904 patent/US5770878A/en not_active Expired - Lifetime
-
1997
- 1997-03-20 DE DE69738681T patent/DE69738681D1/de not_active Expired - Lifetime
- 1997-03-20 EP EP97400624A patent/EP0801426B1/de not_active Expired - Lifetime
- 1997-04-08 JP JP08964097A patent/JP4029946B2/ja not_active Expired - Fee Related
-
1998
- 1998-06-11 US US09/096,217 patent/US6368920B1/en not_active Expired - Lifetime
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JP4029946B2 (ja) | 2008-01-09 |
US6368920B1 (en) | 2002-04-09 |
EP0801426A2 (de) | 1997-10-15 |
US5770878A (en) | 1998-06-23 |
EP0801426B1 (de) | 2008-05-14 |
JPH1032335A (ja) | 1998-02-03 |
EP0801426A3 (de) | 1998-09-30 |
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