JP5008046B2 - 半導体デバイス - Google Patents
半導体デバイス Download PDFInfo
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- JP5008046B2 JP5008046B2 JP2005173243A JP2005173243A JP5008046B2 JP 5008046 B2 JP5008046 B2 JP 5008046B2 JP 2005173243 A JP2005173243 A JP 2005173243A JP 2005173243 A JP2005173243 A JP 2005173243A JP 5008046 B2 JP5008046 B2 JP 5008046B2
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- 239000004065 semiconductor Substances 0.000 title claims description 75
- 239000010410 layer Substances 0.000 claims description 118
- 239000012535 impurity Substances 0.000 claims description 28
- 239000011229 interlayer Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Description
10 半導体基板
11 第1のエピタキシャル層
12 第2のエピタキシャル層
13 ソース領域
14 ベース領域
15 ドレイン領域
16 ベース高濃度領域
20 トレンチ
21 ゲート電極
23 層間絶縁膜
25 ソース電極
26 埋め込み絶縁膜
40 空乏層
Claims (8)
- 半導体基板の上に形成され、それより不純物濃度が低い第1のエピタキシャル層と、
第1のエピタキシャル層の上面に接して形成され、それより不純物濃度が低い第2のエピタキシャル層と、
第2のエピタキシャル層の中に設けられ、その上面から下方向に形成された複数のトレンチと、
トレンチの内側に埋め込まれたゲート電極と、
トレンチの両側面に沿い、第2のエピタキシャル層の上面から下方向に設けられたソース領域と、
トレンチの両側面に沿い、ソース領域の下面から下方向に設けられたベース領域と、
トレンチから離隔しソース領域とベース領域に隣接して第2のエピタキシャル層の上面から下方向にベース領域よりも深く形成され、ベース領域と同じ導電型であって不純物濃度が高いベース高濃度領域と、
を備えた、ゲート電極に印加する電圧に応じてスイッチのオン状態とオフ状態とを切り換えする半導体デバイスであって、
オフ状態において、トレンチ両側に設けられたベース高濃度領域から延びる空乏層をトレンチの下側に位置する部分において互いにつながらせ、該ベース高濃度領域から延びる空乏層を、不純物濃度が低い第2のエピタキシャル層を満たして第1のエピタキシャル層の内部の一部にまで至らせることを特徴とする半導体デバイス。 - 請求項1に記載の半導体デバイスにおいて、
ゲート電極の上であって第2のエピタキシャル層の上面の一部を覆うように層間絶縁膜が形成され、この層間絶縁膜とソース領域の一部とベース高濃度領域の上面に接してソース電極が設けられていることを特徴とする半導体デバイス。 - 請求項1に記載の半導体デバイスにおいて、
ゲート電極の上であってトレンチの内側の開口縁付近まで埋め込まれる埋め込み絶縁膜が形成され、埋め込み絶縁膜とソース領域とベース高濃度領域の上面に接してソース電極が設けられていることを特徴とする半導体デバイス。 - 請求項1に記載の半導体デバイスにおいて、
オフ状態において、ベース領域とトレンチの下面から延びる空乏層が、ベース高濃度領域から延びる空乏層に含まれ、一体化していることを特徴とする半導体デバイス。 - 半導体基板の上に形成され、それより不純物濃度が低い第1のエピタキシャル層と、
第1のエピタキシャル層の上面に接して形成され、それより不純物濃度が低い第2のエピタキシャル層と、
第2のエピタキシャル層の中に設けられ、その上面から下方向に形成された複数のトレンチと、
トレンチの内側に埋め込まれたゲート電極と、
トレンチの両側面に沿い、第2のエピタキシャル層の表面に接する位置に設けられたソース領域と、
トレンチの両側面に沿い、ソース領域の下面から下方向にトレンチの途中の位置まで設けられたベース領域と、
隣合うトレンチ間のトレンチから離隔した位置に、ベース領域に隣接してベース領域よりも深く形成され、ベース領域と同じ導電型であって不純物濃度が高いベース高濃度領域と、
を備えた、ゲート電極に印加する電圧に応じてスイッチのオン状態とオフ状態とを切り換えする半導体デバイスであって、
オフ状態において、トレンチ両側に設けられたベース高濃度領域から延びる空乏層をトレンチの下側に位置する部分において互いにつながらせ、該ベース高濃度領域から延びる空乏層を、不純物濃度が低い第2のエピタキシャル層を満たして第1のエピタキシャル層の内部の一部にまで至らせることを特徴とする半導体デバイス。 - 請求項5に記載の半導体デバイスにおいて、
ゲート電極の上であって第2のエピタキシャル層の上面の一部を覆うように層間絶縁膜が形成され、この層間絶縁膜とソース領域の一部とベース高濃度領域の上面に接してソース電極が設けられていることを特徴とする半導体デバイス。 - 請求項5に記載の半導体デバイスにおいて、
ゲート電極の上であってトレンチの内側の開口縁付近まで埋め込まれる埋め込み絶縁膜が形成され、埋め込み絶縁膜とソース領域とベース高濃度領域の上面に接してソース電極が設けられていることを特徴とする半導体デバイス。 - 請求項5に記載の半導体デバイスにおいて、
オフ状態において、ベース領域とトレンチの下面から延びる空乏層が、ベース高濃度領域から延びる空乏層に含まれ、一体化していることを特徴とする半導体デバイス。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005173243A JP5008046B2 (ja) | 2005-06-14 | 2005-06-14 | 半導体デバイス |
EP06757127A EP1909330A4 (en) | 2005-06-14 | 2006-06-07 | SEMICONDUCTOR COMPONENT |
US11/922,092 US7939884B2 (en) | 2005-06-14 | 2006-06-07 | Semiconductor device |
KR1020077028959A KR20080014855A (ko) | 2005-06-14 | 2006-06-07 | 반도체 디바이스 |
CNA200680020893XA CN101194366A (zh) | 2005-06-14 | 2006-06-07 | 半导体器件 |
PCT/JP2006/311420 WO2006134810A1 (ja) | 2005-06-14 | 2006-06-07 | 半導体デバイス |
TW095121226A TW200731535A (en) | 2005-06-14 | 2006-06-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005173243A JP5008046B2 (ja) | 2005-06-14 | 2005-06-14 | 半導体デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006351652A JP2006351652A (ja) | 2006-12-28 |
JP5008046B2 true JP5008046B2 (ja) | 2012-08-22 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005173243A Active JP5008046B2 (ja) | 2005-06-14 | 2005-06-14 | 半導体デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US7939884B2 (ja) |
EP (1) | EP1909330A4 (ja) |
JP (1) | JP5008046B2 (ja) |
KR (1) | KR20080014855A (ja) |
CN (1) | CN101194366A (ja) |
TW (1) | TW200731535A (ja) |
WO (1) | WO2006134810A1 (ja) |
Families Citing this family (9)
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JP5189771B2 (ja) * | 2007-02-01 | 2013-04-24 | ローム株式会社 | GaN系半導体素子 |
JP4564514B2 (ja) | 2007-05-18 | 2010-10-20 | 株式会社東芝 | 半導体装置 |
KR100853799B1 (ko) | 2007-07-25 | 2008-08-25 | 주식회사 동부하이텍 | 트렌치 게이트 반도체 소자 및 그의 제조 방법 |
JP2009038318A (ja) * | 2007-08-03 | 2009-02-19 | Toshiba Corp | 半導体装置 |
JP2010045123A (ja) * | 2008-08-11 | 2010-02-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP6047297B2 (ja) * | 2012-04-09 | 2016-12-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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2005
- 2005-06-14 JP JP2005173243A patent/JP5008046B2/ja active Active
-
2006
- 2006-06-07 EP EP06757127A patent/EP1909330A4/en not_active Withdrawn
- 2006-06-07 CN CNA200680020893XA patent/CN101194366A/zh active Pending
- 2006-06-07 US US11/922,092 patent/US7939884B2/en active Active
- 2006-06-07 KR KR1020077028959A patent/KR20080014855A/ko not_active Application Discontinuation
- 2006-06-07 WO PCT/JP2006/311420 patent/WO2006134810A1/ja active Application Filing
- 2006-06-14 TW TW095121226A patent/TW200731535A/zh unknown
Also Published As
Publication number | Publication date |
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WO2006134810A1 (ja) | 2006-12-21 |
EP1909330A1 (en) | 2008-04-09 |
US7939884B2 (en) | 2011-05-10 |
JP2006351652A (ja) | 2006-12-28 |
EP1909330A4 (en) | 2009-12-09 |
KR20080014855A (ko) | 2008-02-14 |
CN101194366A (zh) | 2008-06-04 |
TW200731535A (en) | 2007-08-16 |
US20090302379A1 (en) | 2009-12-10 |
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