JP4618766B2 - 半導体デバイス - Google Patents
半導体デバイス Download PDFInfo
- Publication number
- JP4618766B2 JP4618766B2 JP2003342712A JP2003342712A JP4618766B2 JP 4618766 B2 JP4618766 B2 JP 4618766B2 JP 2003342712 A JP2003342712 A JP 2003342712A JP 2003342712 A JP2003342712 A JP 2003342712A JP 4618766 B2 JP4618766 B2 JP 4618766B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- oxide film
- trench
- gate electrode
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 73
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 229920005591 polysilicon Polymers 0.000 claims description 21
- 230000000694 effects Effects 0.000 claims description 4
- 238000005247 gettering Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 26
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Description
2 半導体デバイス(第2の実施形態)
11 半導体基板
12 ドレイン領域
13 ベース領域
14 ソース領域
15 高濃度ベース領域
20 トレンチ
21 ゲート電極
22 ソース電極
23 ゲート酸化膜
25 シリコン窒化膜
26 ポリシリコン膜
27 シリコン酸化膜
Claims (2)
- 半導体基板の表面に形成されたトレンチの側面に沿って、ソース領域、ベース領域、ドレイン領域が形成され、トレンチの内側にゲート電極が埋め込まれたMOSFETを有する半導体デバイスにおいて、
ゲート電極の上であってトレンチの内側の開口縁付近まで埋め込まれるポリシリコン膜を設け、このポリシリコン膜の表面とソース領域の表面とに接してソース電極を形成してなり、
このポリシリコン膜は、ゲッタリング効果を得るようにリンドープされており、
このポリシリコン膜と前記ゲート電極との間にシリコン酸化膜を設けてなることを特徴とする半導体デバイス。 - 請求項1記載の半導体デバイスにおいて、
前記ポリシリコン膜とトレンチの側面との間には、前記ポリシリコン膜の上面よりも沈んだ位置であって前記シリコン酸化膜よりも上の位置までゲート酸化膜が形成されていることを特徴とする半導体デバイス。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342712A JP4618766B2 (ja) | 2003-10-01 | 2003-10-01 | 半導体デバイス |
US10/948,692 US7166891B2 (en) | 2003-10-01 | 2004-09-24 | Semiconductor device with etch resistant electrical insulation layer between gate electrode and source electrode |
US11/610,240 US7470589B2 (en) | 2003-10-01 | 2006-12-13 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342712A JP4618766B2 (ja) | 2003-10-01 | 2003-10-01 | 半導体デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005109285A JP2005109285A (ja) | 2005-04-21 |
JP4618766B2 true JP4618766B2 (ja) | 2011-01-26 |
Family
ID=34509685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003342712A Expired - Lifetime JP4618766B2 (ja) | 2003-10-01 | 2003-10-01 | 半導体デバイス |
Country Status (2)
Country | Link |
---|---|
US (2) | US7166891B2 (ja) |
JP (1) | JP4618766B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7319059B2 (en) * | 2005-01-31 | 2008-01-15 | International Rectifier Corporation | High density FET with self-aligned source atop the trench |
JP5008046B2 (ja) * | 2005-06-14 | 2012-08-22 | ローム株式会社 | 半導体デバイス |
US8022482B2 (en) * | 2006-02-14 | 2011-09-20 | Alpha & Omega Semiconductor, Ltd | Device configuration of asymmetrical DMOSFET with schottky barrier source |
US8779506B2 (en) * | 2006-03-07 | 2014-07-15 | Infineon Technologies Ag | Semiconductor component arrangement comprising a trench transistor |
JP2008098593A (ja) * | 2006-09-15 | 2008-04-24 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP2008108785A (ja) * | 2006-10-23 | 2008-05-08 | Nec Electronics Corp | 半導体装置およびその製造方法 |
KR100847308B1 (ko) * | 2007-02-12 | 2008-07-21 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법. |
JP4564514B2 (ja) * | 2007-05-18 | 2010-10-20 | 株式会社東芝 | 半導体装置 |
JP5135884B2 (ja) * | 2007-05-24 | 2013-02-06 | 富士電機株式会社 | 半導体装置の製造方法 |
KR101662282B1 (ko) * | 2010-01-14 | 2016-10-05 | 삼성전자주식회사 | 고유전율의 보호막 패턴을 포함하는 매립 게이트 패턴을 갖는 반도체 장치 및 이의 제조 방법 |
KR101920247B1 (ko) | 2012-09-17 | 2018-11-20 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1197685A (ja) * | 1997-09-19 | 1999-04-09 | Nec Corp | 縦型電界効果トランジスタ及びその製造方法 |
JPH11354780A (ja) * | 1998-06-03 | 1999-12-24 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
JP2000150940A (ja) * | 1998-11-18 | 2000-05-30 | Denso Corp | 半導体微粒子集合体及びその製造方法 |
JP2003101027A (ja) * | 2001-09-27 | 2003-04-04 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5148257A (en) * | 1989-12-20 | 1992-09-15 | Nec Corporation | Semiconductor device having u-groove |
US6319784B1 (en) * | 1999-05-26 | 2001-11-20 | Taiwan Semiconductor Manufacturing Company | Using high temperature H2 anneal to recrystallize S/D and remove native oxide simultaneously |
JP2002280553A (ja) * | 2001-03-19 | 2002-09-27 | Toshiba Corp | 半導体装置及びその製造方法 |
US20020137306A1 (en) * | 2001-03-20 | 2002-09-26 | Tai-Ju Chen | Method for forming polysilicon-filled trench isolations |
DE10153315B4 (de) * | 2001-10-29 | 2004-05-19 | Infineon Technologies Ag | Halbleiterbauelement |
US6861701B2 (en) * | 2003-03-05 | 2005-03-01 | Advanced Analogic Technologies, Inc. | Trench power MOSFET with planarized gate bus |
TW583747B (en) * | 2003-03-06 | 2004-04-11 | Advanced Power Electronics Cor | High density trench power MOSFET structure and method thereof |
-
2003
- 2003-10-01 JP JP2003342712A patent/JP4618766B2/ja not_active Expired - Lifetime
-
2004
- 2004-09-24 US US10/948,692 patent/US7166891B2/en active Active
-
2006
- 2006-12-13 US US11/610,240 patent/US7470589B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1197685A (ja) * | 1997-09-19 | 1999-04-09 | Nec Corp | 縦型電界効果トランジスタ及びその製造方法 |
JPH11354780A (ja) * | 1998-06-03 | 1999-12-24 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
JP2000150940A (ja) * | 1998-11-18 | 2000-05-30 | Denso Corp | 半導体微粒子集合体及びその製造方法 |
JP2003101027A (ja) * | 2001-09-27 | 2003-04-04 | Toshiba Corp | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20050082604A1 (en) | 2005-04-21 |
JP2005109285A (ja) | 2005-04-21 |
US7166891B2 (en) | 2007-01-23 |
US20070082416A1 (en) | 2007-04-12 |
US7470589B2 (en) | 2008-12-30 |
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