TW200731535A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- TW200731535A TW200731535A TW095121226A TW95121226A TW200731535A TW 200731535 A TW200731535 A TW 200731535A TW 095121226 A TW095121226 A TW 095121226A TW 95121226 A TW95121226 A TW 95121226A TW 200731535 A TW200731535 A TW 200731535A
- Authority
- TW
- Taiwan
- Prior art keywords
- epitaxial layer
- base area
- trench
- concentration
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005173243A JP5008046B2 (ja) | 2005-06-14 | 2005-06-14 | 半導体デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200731535A true TW200731535A (en) | 2007-08-16 |
Family
ID=37532173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095121226A TW200731535A (en) | 2005-06-14 | 2006-06-14 | Semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US7939884B2 (zh) |
EP (1) | EP1909330A4 (zh) |
JP (1) | JP5008046B2 (zh) |
KR (1) | KR20080014855A (zh) |
CN (1) | CN101194366A (zh) |
TW (1) | TW200731535A (zh) |
WO (1) | WO2006134810A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI560880B (en) * | 2012-04-09 | 2016-12-01 | Renesas Electronics Corp | Semiconductor device |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5189771B2 (ja) * | 2007-02-01 | 2013-04-24 | ローム株式会社 | GaN系半導体素子 |
JP4564514B2 (ja) | 2007-05-18 | 2010-10-20 | 株式会社東芝 | 半導体装置 |
KR100853799B1 (ko) | 2007-07-25 | 2008-08-25 | 주식회사 동부하이텍 | 트렌치 게이트 반도체 소자 및 그의 제조 방법 |
JP2009038318A (ja) * | 2007-08-03 | 2009-02-19 | Toshiba Corp | 半導体装置 |
JP2010045123A (ja) * | 2008-08-11 | 2010-02-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP5791821B2 (ja) * | 2012-10-18 | 2015-10-07 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
US20160013300A1 (en) * | 2013-02-25 | 2016-01-14 | Hitachi, Ltd. | Semiconductor device, drive device for semiconductor circuit, and power conversion device |
US10446497B2 (en) * | 2016-03-29 | 2019-10-15 | Microchip Technology Incorporated | Combined source and base contact for a field effect transistor |
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US3999946A (en) * | 1976-02-23 | 1976-12-28 | Allied Chemical Corporation | Time-temperature history indicators |
US4215208A (en) * | 1977-10-05 | 1980-07-29 | Allied Chemical Corporation | Thermochromic polyacetylenes containing urethane groups |
US4238352A (en) * | 1978-11-13 | 1980-12-09 | Allied Chemical Corporation | Co-polymerized acetylenic compositions |
US4242440A (en) * | 1979-04-30 | 1980-12-30 | Allied Chemical Corporation | Thermochromic polyacetylenes used in laser beam recording method |
US4389217A (en) * | 1979-05-11 | 1983-06-21 | Allied Corporation | Integrated time-temperature or radiation-dosage history recording device |
US4708019A (en) * | 1984-06-27 | 1987-11-24 | Gte Laboratories Incorporated | Measurement of strain employing a piezoresistive blend of a doped acetylene polymer and an elastomer |
US4767826A (en) * | 1985-07-18 | 1988-08-30 | Polytechnic Institute Of New York | Radiation-sensitive polymers |
US4721769A (en) * | 1985-10-18 | 1988-01-26 | Gte Laboratories Incorporated | Diacetylene segmented copolymers |
US4849500A (en) * | 1986-03-07 | 1989-07-18 | Gte Laboratories Incorporated | Polyamide from diacetylene dicarboxylic acid compound |
US4916211A (en) * | 1986-03-07 | 1990-04-10 | Gte Laboratories Incorporated | Thermochromic cross polymerized polyamide-diacetylene compound |
JP2941823B2 (ja) * | 1988-11-28 | 1999-08-30 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
US5491097A (en) * | 1989-06-15 | 1996-02-13 | Biocircuits Corporation | Analyte detection with multilayered bioelectronic conductivity sensors |
US5156810A (en) * | 1989-06-15 | 1992-10-20 | Biocircuits Corporation | Biosensors employing electrical, optical and mechanical signals |
US5672465A (en) * | 1990-04-09 | 1997-09-30 | Jp Laboratories, Inc. | Polyethyleneimine binder complex films |
GB9215653D0 (en) * | 1992-07-23 | 1992-09-09 | Philips Electronics Uk Ltd | A method of manufacturing a semiconductor device comprising an insulated gate field effect device |
US5910669A (en) * | 1992-07-24 | 1999-06-08 | Siliconix Incorporated | Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof |
US5558313A (en) * | 1992-07-24 | 1996-09-24 | Siliconix Inorporated | Trench field effect transistor with reduced punch-through susceptibility and low RDSon |
US6022748A (en) | 1997-08-29 | 2000-02-08 | Sandia Corporation - New Mexico Regents Of The University Of California | Sol-gel matrices for direct colorimetric detection of analytes |
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US6103217A (en) * | 1994-08-11 | 2000-08-15 | The Regents Of The University Of California | Polymeric assemblies for sensitive colorimetric assays |
US5674766A (en) | 1994-12-30 | 1997-10-07 | Siliconix Incorporated | Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer |
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JPH08264772A (ja) * | 1995-03-23 | 1996-10-11 | Toyota Motor Corp | 電界効果型半導体素子 |
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US5616400A (en) * | 1995-11-20 | 1997-04-01 | Century International Adhesives & Coating Corporation | Cold seal adhesives, cold sealable films and packages formed therewith |
US5685641A (en) * | 1996-01-16 | 1997-11-11 | Ribi; Hans O. | Devices for rapid temperature detection |
JP2000506378A (ja) | 1996-01-26 | 2000-05-30 | ザ リージェンツ オブ ザ ユニバーシティー オブ カリフォルニア. | アナライトの直接的発色検出用のポリマーフィルム、アッセイおよび方法 |
US5770878A (en) * | 1996-04-10 | 1998-06-23 | Harris Corporation | Trench MOS gate device |
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JP3358611B2 (ja) * | 2000-01-19 | 2002-12-24 | 日本電気株式会社 | 半導体装置の製造方法 |
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US20040126897A1 (en) * | 2002-12-19 | 2004-07-01 | 3M Innovative Properties Company | Colorimetric sensors constructed of diacetylene materials |
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-
2005
- 2005-06-14 JP JP2005173243A patent/JP5008046B2/ja active Active
-
2006
- 2006-06-07 EP EP06757127A patent/EP1909330A4/en not_active Withdrawn
- 2006-06-07 CN CNA200680020893XA patent/CN101194366A/zh active Pending
- 2006-06-07 US US11/922,092 patent/US7939884B2/en active Active
- 2006-06-07 KR KR1020077028959A patent/KR20080014855A/ko not_active Application Discontinuation
- 2006-06-07 WO PCT/JP2006/311420 patent/WO2006134810A1/ja active Application Filing
- 2006-06-14 TW TW095121226A patent/TW200731535A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI560880B (en) * | 2012-04-09 | 2016-12-01 | Renesas Electronics Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
WO2006134810A1 (ja) | 2006-12-21 |
EP1909330A1 (en) | 2008-04-09 |
US7939884B2 (en) | 2011-05-10 |
JP2006351652A (ja) | 2006-12-28 |
EP1909330A4 (en) | 2009-12-09 |
JP5008046B2 (ja) | 2012-08-22 |
KR20080014855A (ko) | 2008-02-14 |
CN101194366A (zh) | 2008-06-04 |
US20090302379A1 (en) | 2009-12-10 |
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