DE69735790D1 - Mehrstufige Spannungserhöhungsschaltung mit erhöhter Substratvorspannung - Google Patents

Mehrstufige Spannungserhöhungsschaltung mit erhöhter Substratvorspannung

Info

Publication number
DE69735790D1
DE69735790D1 DE69735790T DE69735790T DE69735790D1 DE 69735790 D1 DE69735790 D1 DE 69735790D1 DE 69735790 T DE69735790 T DE 69735790T DE 69735790 T DE69735790 T DE 69735790T DE 69735790 D1 DE69735790 D1 DE 69735790D1
Authority
DE
Germany
Prior art keywords
substrate bias
boosting circuit
voltage boosting
stage voltage
increased substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69735790T
Other languages
English (en)
Other versions
DE69735790T2 (de
Inventor
Hiroyuki Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lapis Semiconductor Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Application granted granted Critical
Publication of DE69735790D1 publication Critical patent/DE69735790D1/de
Publication of DE69735790T2 publication Critical patent/DE69735790T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/078—Charge pumps of the Schenkel-type with means for reducing the back bias effect, i.e. the effect which causes the threshold voltage of transistors to increase as more stages are added to the converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Manipulation Of Pulses (AREA)
  • Read Only Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69735790T 1996-06-12 1997-02-27 Mehrstufige Spannungserhöhungsschaltung mit erhöhter Substratvorspannung Expired - Lifetime DE69735790T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15069196 1996-06-12
JP15069196A JP3394133B2 (ja) 1996-06-12 1996-06-12 昇圧回路

Publications (2)

Publication Number Publication Date
DE69735790D1 true DE69735790D1 (de) 2006-06-08
DE69735790T2 DE69735790T2 (de) 2007-05-10

Family

ID=15502351

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69735790T Expired - Lifetime DE69735790T2 (de) 1996-06-12 1997-02-27 Mehrstufige Spannungserhöhungsschaltung mit erhöhter Substratvorspannung

Country Status (6)

Country Link
US (1) US5892267A (de)
EP (1) EP0813290B1 (de)
JP (1) JP3394133B2 (de)
KR (1) KR100367316B1 (de)
CN (1) CN1175018A (de)
DE (1) DE69735790T2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3195256B2 (ja) * 1996-10-24 2001-08-06 株式会社東芝 半導体集積回路
JPH114575A (ja) * 1997-06-11 1999-01-06 Nec Corp 昇圧回路
KR100271840B1 (ko) * 1997-08-27 2000-11-15 다니구찌 이찌로오 회로 면적의 증대를 억제하면서 복수의 전위를 출력할 수 있는내부 전위 발생 회로
FR2773012B1 (fr) * 1997-12-24 2001-02-02 Sgs Thomson Microelectronics Dispositif a pompe de charges negatives
US6232826B1 (en) * 1998-01-12 2001-05-15 Intel Corporation Charge pump avoiding gain degradation due to the body effect
JP3385960B2 (ja) * 1998-03-16 2003-03-10 日本電気株式会社 負電圧チャージポンプ回路
JP3223504B2 (ja) * 1998-03-31 2001-10-29 日本電気株式会社 昇圧回路
JP2001078437A (ja) * 1999-06-30 2001-03-23 Toshiba Corp ポンプ回路
GB0000510D0 (en) * 2000-01-11 2000-03-01 Koninkl Philips Electronics Nv A charge pump circuit
US6696876B2 (en) * 2001-01-12 2004-02-24 Sun Microsystems, Inc. Clock interpolation through capacitive weighting
TW529178B (en) * 2001-02-06 2003-04-21 Sanyo Electric Co Charge pump device
JP2003197792A (ja) * 2001-12-28 2003-07-11 Sanyo Electric Co Ltd 半導体装置
JP2005339658A (ja) * 2004-05-26 2005-12-08 Toshiba Corp 昇圧回路
KR100587683B1 (ko) * 2004-06-07 2006-06-08 삼성전자주식회사 불휘발성 반도체 메모리 장치에서의 고전압 발생회로
JP4706381B2 (ja) * 2004-10-22 2011-06-22 株式会社デンソー 半導体装置
US7236408B2 (en) * 2005-07-19 2007-06-26 International Business Machines Corporation Electronic circuit having variable biasing
JP2007096036A (ja) * 2005-09-29 2007-04-12 Matsushita Electric Ind Co Ltd 昇圧回路
JP5361176B2 (ja) 2006-12-13 2013-12-04 株式会社半導体エネルギー研究所 半導体装置
JP5179849B2 (ja) * 2006-12-28 2013-04-10 株式会社半導体エネルギー研究所 半導体装置
JP2008193866A (ja) 2007-02-07 2008-08-21 Seiko Instruments Inc 昇圧型スイッチングレギュレータ
JP5056427B2 (ja) * 2008-01-15 2012-10-24 富士通セミコンダクター株式会社 チャージポンプ回路
CN103593698B (zh) 2008-04-07 2017-05-03 瑞章科技有限公司 利用光对rfid标签进行子集选择
KR20090131985A (ko) 2008-06-19 2009-12-30 삼성전자주식회사 래치업 현상을 감소시킨 내부 전원전압 발생장치 및 이를구비하는 반도체 장치
CN102265494B (zh) 2008-12-18 2014-03-19 Nxp股份有限公司 电荷泵电路
CN101771340B (zh) * 2008-12-31 2012-10-31 中芯国际集成电路制造(上海)有限公司 电荷泵
DE112011102837B4 (de) * 2010-08-27 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Speichereinrichtung und Halbleitereinrichtung mit Doppelgate und Oxidhalbleiter
JP5112539B2 (ja) * 2011-06-01 2013-01-09 株式会社東芝 半導体集積回路
US20130257522A1 (en) * 2012-03-30 2013-10-03 Tyler Daigle High input voltage charge pump
US20130307496A1 (en) * 2012-05-18 2013-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8947158B2 (en) * 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9385592B2 (en) 2013-08-21 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Charge pump circuit and semiconductor device including the same
TWI496398B (zh) * 2013-12-31 2015-08-11 Egalax Empia Technology Inc Use the wiring to change the output voltage of the charge pump
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN106485290B (zh) 2015-08-24 2019-08-13 瑞章科技有限公司 增强标签反向散射能量的装置及方法
SG10201701689UA (en) 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
US9778672B1 (en) * 2016-03-31 2017-10-03 Qualcomm Incorporated Gate boosted low drop regulator
JP6756590B2 (ja) * 2016-11-22 2020-09-16 エイブリック株式会社 昇圧回路及びそれを備えた不揮発性メモリ
US10411599B1 (en) 2018-03-28 2019-09-10 Qualcomm Incorporated Boost and LDO hybrid converter with dual-loop control
US10444780B1 (en) 2018-09-20 2019-10-15 Qualcomm Incorporated Regulation/bypass automation for LDO with multiple supply voltages
US10591938B1 (en) 2018-10-16 2020-03-17 Qualcomm Incorporated PMOS-output LDO with full spectrum PSR
US10545523B1 (en) 2018-10-25 2020-01-28 Qualcomm Incorporated Adaptive gate-biased field effect transistor for low-dropout regulator
US10826389B1 (en) 2019-05-28 2020-11-03 Samsung Electronics Co., Ltd. Charge pump device and image sensor including the same
US11372436B2 (en) 2019-10-14 2022-06-28 Qualcomm Incorporated Simultaneous low quiescent current and high performance LDO using single input stage and multiple output stages

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5431671B2 (de) * 1973-03-14 1979-10-08
JPS63316510A (ja) * 1987-06-18 1988-12-23 Nec Ic Microcomput Syst Ltd 昇圧回路
NL8702734A (nl) * 1987-11-17 1989-06-16 Philips Nv Spanningsvermenigvuldigschakeling en gelijkrichtelement.
US5081371A (en) * 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
DE4130191C2 (de) * 1991-09-30 1993-10-21 Samsung Electronics Co Ltd Konstantspannungsgenerator für eine Halbleitereinrichtung mit kaskadierter Auflade- bzw. Entladeschaltung
JP3307453B2 (ja) * 1993-03-18 2002-07-24 ソニー株式会社 昇圧回路
JP3043201B2 (ja) * 1993-04-22 2000-05-22 株式会社東芝 昇圧回路
US5734290A (en) * 1996-03-15 1998-03-31 National Science Council Of R.O.C. Charge pumping circuit having cascaded stages receiving two clock signals
US5625544A (en) * 1996-04-25 1997-04-29 Programmable Microelectronics Corp. Charge pump

Also Published As

Publication number Publication date
KR980005030A (ko) 1998-03-30
EP0813290A2 (de) 1997-12-17
DE69735790T2 (de) 2007-05-10
EP0813290A3 (de) 1999-08-11
JP3394133B2 (ja) 2003-04-07
KR100367316B1 (ko) 2003-02-19
JPH09331671A (ja) 1997-12-22
US5892267A (en) 1999-04-06
EP0813290B1 (de) 2006-05-03
CN1175018A (zh) 1998-03-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: OKI SEMICONDUCTOR CO.,LTD., TOKYO, JP