DE69730171D1 - Magnetoresistive Vorrichtung und magnetoresistiver Kopf - Google Patents

Magnetoresistive Vorrichtung und magnetoresistiver Kopf

Info

Publication number
DE69730171D1
DE69730171D1 DE69730171T DE69730171T DE69730171D1 DE 69730171 D1 DE69730171 D1 DE 69730171D1 DE 69730171 T DE69730171 T DE 69730171T DE 69730171 T DE69730171 T DE 69730171T DE 69730171 D1 DE69730171 D1 DE 69730171D1
Authority
DE
Germany
Prior art keywords
magnetoresistive
head
magnetoresistive head
magnetoresistive device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69730171T
Other languages
English (en)
Inventor
Yasuhiro Kawawake
Mitsuo Satomi
Hiroshi Sakakima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69730171D1 publication Critical patent/DE69730171D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204—Exchange coupling of amorphous multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
DE69730171T 1996-02-22 1997-02-21 Magnetoresistive Vorrichtung und magnetoresistiver Kopf Expired - Lifetime DE69730171D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP3455696 1996-02-22
JP6051396 1996-03-18
JP8367496 1996-04-05
JP12674396 1996-05-22

Publications (1)

Publication Number Publication Date
DE69730171D1 true DE69730171D1 (de) 2004-09-16

Family

ID=27459947

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69730171T Expired - Lifetime DE69730171D1 (de) 1996-02-22 1997-02-21 Magnetoresistive Vorrichtung und magnetoresistiver Kopf

Country Status (4)

Country Link
US (3) US5909345A (de)
EP (1) EP0791915B1 (de)
KR (1) KR100274108B1 (de)
DE (1) DE69730171D1 (de)

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JP3255872B2 (ja) 1997-04-17 2002-02-12 アルプス電気株式会社 スピンバルブ型薄膜素子及びその製造方法
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JPH11354860A (ja) * 1998-06-10 1999-12-24 Read Rite Smi Kk スピンバルブ磁気変換素子及び磁気ヘッド
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US6072671A (en) * 1998-07-31 2000-06-06 International Business Machines Corporation Write head with high thermal stability material
US6201671B1 (en) * 1998-12-04 2001-03-13 International Business Machines Corporation Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
JP2000207714A (ja) * 1999-01-13 2000-07-28 Read Rite Smi Kk 磁気抵抗効果型薄膜磁気ヘッド、並びに、その製造方法
DE19908054C2 (de) * 1999-02-25 2001-06-28 Forschungszentrum Juelich Gmbh Ungekoppelter GMR-Sensor
US6567246B1 (en) * 1999-03-02 2003-05-20 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element
US6201672B1 (en) * 1999-04-26 2001-03-13 International Business Machines Corporation Spin valve sensor having improved interface between pinning layer and pinned layer structure
JP2001007420A (ja) * 1999-06-17 2001-01-12 Sony Corp 磁気抵抗効果膜とこれを用いた磁気読取りセンサ
JP3421281B2 (ja) * 1999-08-11 2003-06-30 ティーディーケイ株式会社 磁気変換素子、薄膜磁気ヘッドおよびそれらの製造方法
US6205052B1 (en) * 1999-10-21 2001-03-20 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
US6381105B1 (en) * 1999-10-22 2002-04-30 Read-Rite Corporation Hybrid dual spin valve sensor and method for making same
JP2001126219A (ja) * 1999-10-28 2001-05-11 Read Rite Corp スピンバルブ型磁気抵抗センサ及び薄膜磁気ヘッド
EP1115164B1 (de) * 2000-01-07 2005-05-25 Sharp Kabushiki Kaisha Magnetoresistive Anordnung und diese verwendendes magnetisches Speicherelement
US6317299B1 (en) * 2000-02-17 2001-11-13 International Business Machines Corporation Seed layer for improving pinning field spin valve sensor
US6381106B1 (en) * 2000-04-12 2002-04-30 International Business Machines Corporation Top spin valve sensor that has a free layer structure with a cobalt iron boron (cofeb) layer
US6700753B2 (en) 2000-04-12 2004-03-02 Seagate Technology Llc Spin valve structures with specular reflection layers
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US6645614B1 (en) 2000-07-25 2003-11-11 Seagate Technology Llc Magnetic recording media having enhanced coupling between magnetic layers
US6473278B1 (en) * 2000-07-31 2002-10-29 International Business Machines Corporation Giant magnetoresistive sensor with a high resistivity free layer
US6538859B1 (en) * 2000-07-31 2003-03-25 International Business Machines Corporation Giant magnetoresistive sensor with an AP-coupled low Hk free layer
JP2002074619A (ja) 2000-08-25 2002-03-15 Alps Electric Co Ltd 磁気ヘッド
US6777112B1 (en) 2000-10-10 2004-08-17 Seagate Technology Llc Stabilized recording media including coupled discontinuous and continuous magnetic layers
US6737172B1 (en) 2000-12-07 2004-05-18 Seagate Technology Llc Multi-layered anti-ferromagnetically coupled magnetic media
US6689497B1 (en) 2001-01-08 2004-02-10 Seagate Technology Llc Stabilized AFC magnetic recording media with reduced lattice mismatch between spacer layer(s) and magnetic layers
US6665155B2 (en) 2001-03-08 2003-12-16 International Business Machines Corporation Spin valve sensor with free layer structure having a cobalt niobium (CoNb) or cobalt niobium hafnium (CoNbHf) layer
US7050274B2 (en) * 2001-03-15 2006-05-23 Seagate Technology Llc Multilayer permanent magnet films
US7289303B1 (en) 2001-04-05 2007-10-30 Western Digital (Fremont), Llc Spin valve sensors having synthetic antiferromagnet for longitudinal bias
JP2002368306A (ja) * 2001-06-07 2002-12-20 Canon Inc 磁気抵抗効果膜およびそれを用いたメモリ
DE10128135A1 (de) * 2001-06-09 2002-12-19 Bosch Gmbh Robert Magnetoresistive Schichtanordnung und Gradiometer mit einer derartigen Schichtanordnung
US6828036B1 (en) 2001-08-21 2004-12-07 Seagate Technology Llc Anti-ferromagnetically coupled magnetic media with combined interlayer + first magnetic layer
DE10146546A1 (de) 2001-09-21 2003-04-10 Infineon Technologies Ag Digitale magnetische Speicherzelleneinrichtung
EP1580821B1 (de) * 2001-10-12 2015-12-09 Sony Corporation Magnetowiderstandseffektelement, magnetisches speicherelement, magnetischer speicherbaustein und verfahren zu ihrer herstellung
US6545906B1 (en) * 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US7842409B2 (en) 2001-11-30 2010-11-30 Seagate Technology Llc Anti-ferromagnetically coupled perpendicular magnetic recording media with oxide
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KR102078849B1 (ko) * 2013-03-11 2020-02-18 삼성전자 주식회사 자기저항 구조체, 이를 포함하는 자기 메모리 소자 및 자기저항 구조체의 제조 방법

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Also Published As

Publication number Publication date
US6198610B1 (en) 2001-03-06
EP0791915B1 (de) 2004-08-11
KR100274108B1 (ko) 2001-01-15
US6031692A (en) 2000-02-29
EP0791915A3 (de) 1998-03-04
EP0791915A2 (de) 1997-08-27
KR970063045A (ko) 1997-09-12
US5909345A (en) 1999-06-01

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