KR960011855A - 자기저항효과헤드 - Google Patents

자기저항효과헤드 Download PDF

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Publication number
KR960011855A
KR960011855A KR1019950020438A KR19950020438A KR960011855A KR 960011855 A KR960011855 A KR 960011855A KR 1019950020438 A KR1019950020438 A KR 1019950020438A KR 19950020438 A KR19950020438 A KR 19950020438A KR 960011855 A KR960011855 A KR 960011855A
Authority
KR
South Korea
Prior art keywords
magnetoresistance effect
effect head
head
magnetoresistance
effect
Prior art date
Application number
KR1019950020438A
Other languages
English (en)
Other versions
KR100238912B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960011855A publication Critical patent/KR960011855A/ko
Application granted granted Critical
Publication of KR100238912B1 publication Critical patent/KR100238912B1/ko

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
KR1019950020438A 1994-09-09 1995-07-12 자기저항효과헤드 KR100238912B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-215893 1994-09-09
JP21589394A JP3574186B2 (ja) 1994-09-09 1994-09-09 磁気抵抗効果素子

Publications (2)

Publication Number Publication Date
KR960011855A true KR960011855A (ko) 1996-04-20
KR100238912B1 KR100238912B1 (ko) 2000-01-15

Family

ID=16680008

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950020438A KR100238912B1 (ko) 1994-09-09 1995-07-12 자기저항효과헤드

Country Status (4)

Country Link
US (1) US5930085A (ko)
JP (1) JP3574186B2 (ko)
KR (1) KR100238912B1 (ko)
DE (1) DE19528245B4 (ko)

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US6712481B2 (en) * 1995-06-27 2004-03-30 Solid State Opto Limited Light emitting panel assemblies
EP0794581A4 (en) * 1995-09-21 1999-10-06 Tdk Corp MAGNETIC CONVERTER
FR2743930B1 (fr) * 1996-01-19 2000-04-07 Fujitsu Ltd Capteur magnetique pour lecture de supports d'enregistrement
JP3327375B2 (ja) * 1996-04-26 2002-09-24 富士通株式会社 磁気抵抗効果型トランスデューサ、その製造方法及び磁気記録装置
JPH10198927A (ja) * 1997-01-08 1998-07-31 Nec Corp 磁気抵抗効果膜およびその製造方法
US6340886B1 (en) * 1997-08-08 2002-01-22 Nonvolatile Electronics, Incorporated Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface
JP3263016B2 (ja) * 1997-10-20 2002-03-04 アルプス電気株式会社 スピンバルブ型薄膜素子
DE19949713C2 (de) * 1999-10-15 2001-08-16 Bosch Gmbh Robert Magnetoresistives Schichtsystem
US6683761B2 (en) 2000-11-09 2004-01-27 Seagate Technology Llc Magnetoresistive sensor with laminate electrical interconnect
US6778357B2 (en) 2000-11-10 2004-08-17 Seagate Technology Llc Electrodeposited high-magnetic-moment material at writer gap pole
US6665155B2 (en) 2001-03-08 2003-12-16 International Business Machines Corporation Spin valve sensor with free layer structure having a cobalt niobium (CoNb) or cobalt niobium hafnium (CoNbHf) layer
JP2003198002A (ja) * 2001-12-25 2003-07-11 Fujitsu Ltd 磁気抵抗効果膜および強磁性積層構造体
US6674617B2 (en) 2002-03-07 2004-01-06 International Business Machines Corporation Tunnel junction sensor with a multilayer free-layer structure
AU2003266512A1 (en) * 2002-09-13 2004-04-30 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect element and production method and application method therefor
US6870716B2 (en) * 2002-09-24 2005-03-22 Hitachi Global Storage Technologies Netherland B.V. Free layer and design for higher areal density
EP1919703B1 (en) 2005-08-12 2013-04-24 Modumetal, LLC Compositionally modulated composite materials and methods for making the same
EP3009532A1 (en) 2009-06-08 2016-04-20 Modumetal, Inc. Electrodeposited nanolaminate coatings and claddings for corrosion protection
US8449948B2 (en) * 2009-09-10 2013-05-28 Western Digital (Fremont), Llc Method and system for corrosion protection of layers in a structure of a magnetic recording transducer
WO2014146114A1 (en) 2013-03-15 2014-09-18 Modumetal, Inc. Nanolaminate coatings
EP2971261A4 (en) * 2013-03-15 2017-05-31 Modumetal, Inc. Electrodeposited compositions and nanolaminated alloys for articles prepared by additive manufacturing processes
EP2971266A4 (en) 2013-03-15 2017-03-01 Modumetal, Inc. A method and apparatus for continuously applying nanolaminate metal coatings
EA201500949A1 (ru) 2013-03-15 2016-02-29 Модьюметл, Инк. Способ формирования многослойного покрытия, покрытие, сформированное вышеуказанным способом, и многослойное покрытие
CA2961508C (en) 2014-09-18 2024-04-09 Modumetal, Inc. A method and apparatus for continuously applying nanolaminate metal coatings
WO2016044712A1 (en) 2014-09-18 2016-03-24 Modumetal, Inc. Methods of preparing articles by electrodeposition and additive manufacturing processes
WO2018049062A1 (en) 2016-09-08 2018-03-15 Modumetal, Inc. Processes for providing laminated coatings on workpieces, and articles made therefrom
CA3057836A1 (en) 2017-03-24 2018-09-27 Modumetal, Inc. Lift plungers with electrodeposited coatings, and systems and methods for producing the same
WO2018195516A1 (en) 2017-04-21 2018-10-25 Modumetal, Inc. Tubular articles with electrodeposited coatings, and systems and methods for producing the same
EP3784823A1 (en) 2018-04-27 2021-03-03 Modumetal, Inc. Apparatuses, systems, and methods for producing a plurality of articles with nanolaminated coatings using rotation

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US4663685A (en) * 1985-08-15 1987-05-05 International Business Machines Magnetoresistive read transducer having patterned longitudinal bias
EP0297776B1 (en) * 1987-06-30 1993-08-04 Sony Corporation Soft magnetic thin films
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JP2690623B2 (ja) * 1991-02-04 1997-12-10 松下電器産業株式会社 磁気抵抗効果素子
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US5304975A (en) * 1991-10-23 1994-04-19 Kabushiki Kaisha Toshiba Magnetoresistance effect element and magnetoresistance effect sensor
JP3022023B2 (ja) * 1992-04-13 2000-03-15 株式会社日立製作所 磁気記録再生装置
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5373238A (en) * 1992-11-06 1994-12-13 International Business Machines Corporation Four layer magnetoresistance device and method for making a four layer magnetoresistance device
JPH0766033A (ja) * 1993-08-30 1995-03-10 Mitsubishi Electric Corp 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ
JP2860233B2 (ja) * 1993-09-09 1999-02-24 株式会社日立製作所 巨大磁気抵抗効果型磁気ヘッドおよびそれを用いた磁気記録再生装置

Also Published As

Publication number Publication date
DE19528245B4 (de) 2006-06-22
US5930085A (en) 1999-07-27
JP3574186B2 (ja) 2004-10-06
DE19528245A1 (de) 1996-03-14
JPH0883937A (ja) 1996-03-26
KR100238912B1 (ko) 2000-01-15

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