DE19811857B4 - Magnetoresistiver Kopf - Google Patents
Magnetoresistiver Kopf Download PDFInfo
- Publication number
- DE19811857B4 DE19811857B4 DE19811857A DE19811857A DE19811857B4 DE 19811857 B4 DE19811857 B4 DE 19811857B4 DE 19811857 A DE19811857 A DE 19811857A DE 19811857 A DE19811857 A DE 19811857A DE 19811857 B4 DE19811857 B4 DE 19811857B4
- Authority
- DE
- Germany
- Prior art keywords
- magnetoresistive head
- magnetoresistive
- head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3945—Heads comprising more than one sensitive element
- G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3143—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding
- G11B5/3146—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding magnetic layers
- G11B5/3153—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding magnetic layers including at least one magnetic thin film coupled by interfacing to the basic magnetic thin film structure
- G11B5/3156—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding magnetic layers including at least one magnetic thin film coupled by interfacing to the basic magnetic thin film structure providing interaction by induced or exchange coupling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3176—Structure of heads comprising at least in the transducing gap regions two magnetic thin films disposed respectively at both sides of the gaps
- G11B5/3179—Structure of heads comprising at least in the transducing gap regions two magnetic thin films disposed respectively at both sides of the gaps the films being mainly disposed in parallel planes
- G11B5/3183—Structure of heads comprising at least in the transducing gap regions two magnetic thin films disposed respectively at both sides of the gaps the films being mainly disposed in parallel planes intersecting the gap plane, e.g. "horizontal head structure"
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6447497 | 1997-03-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE19811857A1 DE19811857A1 (de) | 1998-10-08 |
DE19811857B4 true DE19811857B4 (de) | 2005-10-20 |
Family
ID=13259272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19811857A Expired - Fee Related DE19811857B4 (de) | 1997-03-18 | 1998-03-18 | Magnetoresistiver Kopf |
Country Status (2)
Country | Link |
---|---|
US (1) | US6064552A (de) |
DE (1) | DE19811857B4 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6341642B1 (en) | 1997-07-01 | 2002-01-29 | Ipsco Enterprises Inc. | Controllable variable magnetic field apparatus for flow control of molten steel in a casting mold |
US6307708B1 (en) * | 1998-03-17 | 2001-10-23 | Kabushiki Kaisha Toshiba | Exchange coupling film having a plurality of local magnetic regions, magnetic sensor having the exchange coupling film, and magnetic head having the same |
JP3075253B2 (ja) * | 1998-03-31 | 2000-08-14 | 日本電気株式会社 | スピンバルブ型感磁素子及びこれを用いた磁気ヘッド並びに磁気ディスク装置 |
JP2000113437A (ja) * | 1998-10-08 | 2000-04-21 | Read Rite Smi Kk | 磁気ヘッド装置の製造方法、磁気ヘッド装置、並びに、磁気ヘッド装置の中間製造物 |
FR2786909B1 (fr) * | 1998-12-03 | 2001-01-05 | Jean Pierre Lazarri | Tete magnetique de lecture a magnetoresistance geante pour hautes densites d'informations |
FR2788159B1 (fr) * | 1999-01-06 | 2001-02-09 | Information Technology Dev | Procede de fabrication d'une tete de lecture planaire miniaturisee a magnetoresistance geante |
JP2000285417A (ja) * | 1999-03-31 | 2000-10-13 | Matsushita Electric Ind Co Ltd | 薄膜磁気ヘッド |
DE19983944T1 (de) * | 1999-04-14 | 2002-03-21 | Seagate Technology Llc | Hochempfindliche Spin-Valve-Köpfe mit einem selbstausgerichteten Demagnetisierungsfeld-Ausgleichselement |
JP2000339635A (ja) * | 1999-05-31 | 2000-12-08 | Toshiba Corp | 磁気ヘッド及び磁気記録再生装置 |
JP3807592B2 (ja) * | 1999-06-24 | 2006-08-09 | 松下電器産業株式会社 | 記録再生ヘッドおよびそれを備えた記録再生装置 |
JP2001067628A (ja) * | 1999-09-01 | 2001-03-16 | Nec Corp | 磁気抵抗効果素子と磁気抵抗効果素子の製造方法および磁気抵抗検出システムならびに磁気記録システム |
US6785100B2 (en) * | 2000-04-10 | 2004-08-31 | Matsushita Electric Industrial Co., Ltd. | Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device |
JP3575683B2 (ja) | 2000-10-05 | 2004-10-13 | 松下電器産業株式会社 | 多素子型磁気抵抗素子 |
JP3604617B2 (ja) * | 2000-06-12 | 2004-12-22 | 富士通株式会社 | 磁気検出素子 |
US6539610B1 (en) * | 2000-07-14 | 2003-04-01 | International Business Machines Corporation | Method for manufacturing a magnetic write head |
JP2002074623A (ja) | 2000-08-31 | 2002-03-15 | Toshiba Corp | 水平ヨーク型磁気ヘッドおよび磁気記録装置ならびに磁気再生装置 |
KR100463616B1 (ko) * | 2000-08-31 | 2004-12-29 | 가부시끼가이샤 도시바 | 요크형 자기 헤드 및 자기 디스크 유닛 |
US20020145832A1 (en) * | 2001-04-04 | 2002-10-10 | Seagate Technology Llc | Perpendicular magnetic recording head with soft underlayer biasing |
US6597546B2 (en) | 2001-04-19 | 2003-07-22 | International Business Machines Corporation | Tunnel junction sensor with an antiferromagnetic (AFM) coupled flux guide |
JP2002368306A (ja) * | 2001-06-07 | 2002-12-20 | Canon Inc | 磁気抵抗効果膜およびそれを用いたメモリ |
US6724587B2 (en) | 2001-06-11 | 2004-04-20 | International Business Machines Corporation | Low temperature yoke type tunnel valve sensor |
JP3937388B2 (ja) * | 2001-08-10 | 2007-06-27 | 富士通株式会社 | 磁気センサ及び磁気ヘッド |
FR2830971B1 (fr) * | 2001-10-12 | 2004-03-12 | Commissariat Energie Atomique | Dispositif magnetoresistif a vanne de spin a performances ameliorees |
JP2003198004A (ja) * | 2001-12-27 | 2003-07-11 | Fujitsu Ltd | 磁気抵抗効果素子 |
JP4079271B2 (ja) * | 2002-03-28 | 2008-04-23 | 富士通株式会社 | 磁気抵抗センサの製造方法 |
US7054118B2 (en) * | 2002-03-28 | 2006-05-30 | Nve Corporation | Superparamagnetic field sensing devices |
JP2003318460A (ja) * | 2002-04-24 | 2003-11-07 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
US7266553B1 (en) * | 2002-07-01 | 2007-09-04 | Microsoft Corporation | Content data indexing |
JP2004103769A (ja) * | 2002-09-09 | 2004-04-02 | Fujitsu Ltd | Cpp構造磁気抵抗効果素子 |
US6919280B2 (en) * | 2002-10-15 | 2005-07-19 | Hitachi Global Storage Technologies Netherlands B.V. | Method of removing magnetoresistive sensor cap by reactive ion etching |
US7035059B2 (en) * | 2003-07-18 | 2006-04-25 | Hitachi Global Storage Technologies, Netherland B.V. | Head with self-pinned structure having pinned layer extending beyond track edges of the free layer |
US7227728B2 (en) * | 2003-08-29 | 2007-06-05 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for a current-perpendicular-to-plane Giant Magneto-Resistance sensor with embedded composite film |
US7324310B2 (en) * | 2004-04-30 | 2008-01-29 | Hitachi Global Storage Technologies Netherlands B.V. | Self-pinned dual CPP sensor exchange pinned at stripe back-end to avoid amplitude flipping |
US7268981B2 (en) * | 2004-04-30 | 2007-09-11 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve sensor having antiferromagnetic (AFM) pinning layer structures formed in the end regions |
US7349185B2 (en) * | 2004-07-30 | 2008-03-25 | Hitachi Global Storage Technologies Netherlands, B.V. | Three terminal magnetic sensor for magnetic heads with a semiconductor junction |
US7367110B2 (en) * | 2004-09-27 | 2008-05-06 | Hitachi Global Storage Technologies Netherlands B.V. | Method of fabricating a read head having shaped read sensor-biasing layer junctions using partial milling |
US20060114620A1 (en) * | 2004-11-30 | 2006-06-01 | Tdk Corporation | Granular type free layer and magnetic head |
KR100634540B1 (ko) * | 2005-03-24 | 2006-10-13 | 삼성전자주식회사 | 자기 기록 헤드 및 그 제조방법 |
US7719801B2 (en) * | 2006-04-18 | 2010-05-18 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetoresistive (MR) element having a continuous flux guide defined by the free layer |
JP4877095B2 (ja) * | 2007-06-25 | 2012-02-15 | Tdk株式会社 | 電流センサおよびその製造方法 |
US8711524B2 (en) * | 2008-02-05 | 2014-04-29 | Headway Technologies, Inc. | Patterned MR device with controlled shape anisotropy |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0269129A2 (de) * | 1986-11-28 | 1988-06-01 | Nec Corporation | Dünnfilmmagnetkopf |
US5463516A (en) * | 1992-06-23 | 1995-10-31 | Thomson-Csf | Magnetoresistive transducer or magnetic read head including a layer of composite material including conducting magnetic particles in an insulating material |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5390061A (en) * | 1990-06-08 | 1995-02-14 | Hitachi, Ltd. | Multilayer magnetoresistance effect-type magnetic head |
US5508868A (en) * | 1993-01-25 | 1996-04-16 | Read-Rite Corporation | Dual element magnetoresistive sensing head having in-gap flux guide and flux closure piece with particular connection of magnetoresistive sensing elements to differential amplifier |
US5736921A (en) * | 1994-03-23 | 1998-04-07 | Sanyo Electric Co., Ltd. | Magnetoresistive element |
US5818323A (en) * | 1994-09-09 | 1998-10-06 | Sanyo Electric Co., Ltd. | Magnetoresistive device |
JPH08138215A (ja) * | 1994-09-16 | 1996-05-31 | Toshiba Corp | 磁気抵抗型ヘッドおよびそれを用いた磁気記録再生ヘッド |
US5576914A (en) * | 1994-11-14 | 1996-11-19 | Read-Rite Corporation | Compact read/write head having biased GMR element |
US5909344A (en) * | 1995-11-30 | 1999-06-01 | International Business Machines Corporation | Magnetoresistive sensor with high resistivity flux guide |
US5627704A (en) * | 1996-02-12 | 1997-05-06 | Read-Rite Corporation | Thin film giant magnetoresistive CPP transducer with flux guide yoke structure |
JPH09251622A (ja) * | 1996-03-18 | 1997-09-22 | Toshiba Corp | 磁気ヘッド |
EP0801380A3 (de) * | 1996-04-10 | 1998-03-04 | Read-Rite Corporation | Riesenmagnetoresistive Wandler mit erhöhtem Ausgangssignal |
US5668688A (en) * | 1996-05-24 | 1997-09-16 | Quantum Peripherals Colorado, Inc. | Current perpendicular-to-the-plane spin valve type magnetoresistive transducer |
US5751521A (en) * | 1996-09-23 | 1998-05-12 | International Business Machines Corporation | Differential spin valve sensor structure |
JPH10154312A (ja) * | 1996-11-22 | 1998-06-09 | Sony Corp | 磁気ヘッド及びその製造方法 |
US5729410A (en) * | 1996-11-27 | 1998-03-17 | International Business Machines Corporation | Magnetic tunnel junction device with longitudinal biasing |
TW369649B (en) * | 1997-02-20 | 1999-09-11 | Koninkl Philips Electronics Nv | Single-channel magnetoresistive magnetic head and device including such a magnetic head |
JP3528511B2 (ja) * | 1997-04-14 | 2004-05-17 | 松下電器産業株式会社 | 薄膜磁気ヘッド |
US5930087A (en) * | 1997-11-20 | 1999-07-27 | Hewlett-Packard Company | Robust recording head for near-contact operation |
-
1998
- 1998-03-17 US US09/042,696 patent/US6064552A/en not_active Expired - Fee Related
- 1998-03-18 DE DE19811857A patent/DE19811857B4/de not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0269129A2 (de) * | 1986-11-28 | 1988-06-01 | Nec Corporation | Dünnfilmmagnetkopf |
US5463516A (en) * | 1992-06-23 | 1995-10-31 | Thomson-Csf | Magnetoresistive transducer or magnetic read head including a layer of composite material including conducting magnetic particles in an insulating material |
Non-Patent Citations (1)
Title |
---|
Yamada et al.: "Fabrication Process for high trackdensity yoke MR Heads", In: IEEE Transactions on Magnetics, Vol.26, No.5, September 1990, S.2406- 2408 * |
Also Published As
Publication number | Publication date |
---|---|
DE19811857A1 (de) | 1998-10-08 |
US6064552A (en) | 2000-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |