DE19983944T1 - Hochempfindliche Spin-Valve-Köpfe mit einem selbstausgerichteten Demagnetisierungsfeld-Ausgleichselement - Google Patents

Hochempfindliche Spin-Valve-Köpfe mit einem selbstausgerichteten Demagnetisierungsfeld-Ausgleichselement

Info

Publication number
DE19983944T1
DE19983944T1 DE19983944T DE19983944T DE19983944T1 DE 19983944 T1 DE19983944 T1 DE 19983944T1 DE 19983944 T DE19983944 T DE 19983944T DE 19983944 T DE19983944 T DE 19983944T DE 19983944 T1 DE19983944 T1 DE 19983944T1
Authority
DE
Germany
Prior art keywords
aligned
self
highly sensitive
compensation element
spin valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19983944T
Other languages
English (en)
Inventor
Sining Mao
Amin Nurul
Edward S Murdock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of DE19983944T1 publication Critical patent/DE19983944T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3935—Flux closure films not being part of the track flux guides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3935—Flux closure films not being part of the track flux guides
    • G11B5/3938—Flux closure films not being part of the track flux guides the flux closure films being used for absorbing or reducing demagnetisating or saturating fields
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
DE19983944T 1999-04-14 1999-07-27 Hochempfindliche Spin-Valve-Köpfe mit einem selbstausgerichteten Demagnetisierungsfeld-Ausgleichselement Withdrawn DE19983944T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12915099P 1999-04-14 1999-04-14
PCT/US1999/017009 WO2000062282A1 (en) 1999-04-14 1999-07-27 Highly sensitive spin valve heads using a self-aligned demag-field balance element

Publications (1)

Publication Number Publication Date
DE19983944T1 true DE19983944T1 (de) 2002-03-21

Family

ID=22438669

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19983944T Withdrawn DE19983944T1 (de) 1999-04-14 1999-07-27 Hochempfindliche Spin-Valve-Köpfe mit einem selbstausgerichteten Demagnetisierungsfeld-Ausgleichselement

Country Status (6)

Country Link
US (1) US6256176B1 (de)
JP (1) JP2003516597A (de)
KR (1) KR20020021087A (de)
DE (1) DE19983944T1 (de)
GB (1) GB2363513A (de)
WO (1) WO2000062282A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6115320A (en) 1998-02-23 2000-09-05 Integrated Device Technology, Inc. Separate byte control on fully synchronous pipelined SRAM
US6667862B2 (en) * 2001-02-20 2003-12-23 Carnegie Mellon University Magnetoresistive read head having permanent magnet on top of magnetoresistive element
US20030002231A1 (en) * 2001-06-29 2003-01-02 Dee Richard Henry Reduced sensitivity spin valve head for magnetic tape applications
US7211339B1 (en) * 2002-08-22 2007-05-01 Western Digital (Fremont), Inc. Highly conductive lead adjoining MR stripe and extending beyond stripe height at junction
US7019371B2 (en) * 2004-01-26 2006-03-28 Seagate Technology Llc Current-in-plane magnetic sensor including a trilayer structure
JP4250589B2 (ja) * 2004-12-28 2009-04-08 株式会社東芝 記録ヘッドの残留磁化消磁機能を有するヘッドアンプ回路及び同回路を備えた磁気ディスク装置
US7573684B2 (en) * 2005-04-13 2009-08-11 Seagate Technology Llc Current-in-plane differential magnetic tri-layer sensor
US7436637B2 (en) * 2005-10-05 2008-10-14 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor having an improved pinning structure
US7839606B2 (en) * 2006-06-09 2010-11-23 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head having oxidized read sensor edges to reduce sensor current shunting
US8238062B2 (en) * 2009-06-25 2012-08-07 Seagate Technology Llc Magnetoresistive reader with demagnetization flux guide
US8659855B2 (en) * 2010-03-19 2014-02-25 Seagate Technology Llc Trilayer reader with current constraint at the ABS
US8780508B2 (en) 2012-06-29 2014-07-15 Seagate Technology Llc Magnetic element with biased side shield lamination
US8837092B2 (en) 2012-06-29 2014-09-16 Seagate Technology Llc Magnetic element with biasing structure distal the air bearing surface

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05159242A (ja) * 1991-12-04 1993-06-25 Hitachi Ltd 磁気抵抗効果型ヘッドおよびその製造方法
KR100225179B1 (ko) * 1992-11-30 1999-10-15 니시무로 타이죠 박막 자기 헤드 및 자기 저항 효과형 헤드
JP3190193B2 (ja) * 1993-03-15 2001-07-23 株式会社東芝 薄膜磁気ヘッドの使用方法
JPH07244822A (ja) * 1994-03-08 1995-09-19 Sony Corp 磁気抵抗効果型磁気ヘッド
JPH07272221A (ja) * 1994-03-31 1995-10-20 Yamaha Corp 磁気抵抗効果型薄膜ヘッド
JPH0817020A (ja) * 1994-06-30 1996-01-19 Sony Corp 磁気抵抗効果型薄膜磁気ヘッド
US5654854A (en) * 1995-11-30 1997-08-05 Quantum Corporation Longitudinally biased magnetoresistive sensor having a concave shaped active region to reduce Barkhausen noise by achieving a substantially single magnetic domain state
EP0801380A3 (de) * 1996-04-10 1998-03-04 Read-Rite Corporation Riesenmagnetoresistive Wandler mit erhöhtem Ausgangssignal
US5930084A (en) * 1996-06-17 1999-07-27 International Business Machines Corporation Stabilized MR sensor and flux guide joined by contiguous junction
US5831426A (en) * 1996-08-16 1998-11-03 Nonvolatile Electronics, Incorporated Magnetic current sensor
US5666248A (en) * 1996-09-13 1997-09-09 International Business Machines Corporation Magnetizations of pinned and free layers of a spin valve sensor set by sense current fields
US6064552A (en) * 1997-03-18 2000-05-16 Kabushiki Kaisha Toshiba Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode

Also Published As

Publication number Publication date
US6256176B1 (en) 2001-07-03
KR20020021087A (ko) 2002-03-18
WO2000062282A1 (en) 2000-10-19
JP2003516597A (ja) 2003-05-13
GB2363513A (en) 2001-12-19
GB0122158D0 (en) 2001-10-31

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee
8170 Reinstatement of the former position
8139 Disposal/non-payment of the annual fee