DE69830555D1 - Aufnahmekopf - Google Patents

Aufnahmekopf

Info

Publication number
DE69830555D1
DE69830555D1 DE69830555T DE69830555T DE69830555D1 DE 69830555 D1 DE69830555 D1 DE 69830555D1 DE 69830555 T DE69830555 T DE 69830555T DE 69830555 T DE69830555 T DE 69830555T DE 69830555 D1 DE69830555 D1 DE 69830555D1
Authority
DE
Germany
Prior art keywords
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69830555T
Other languages
English (en)
Other versions
DE69830555T2 (de
Inventor
James A Brug
Manoj K Bhattacharyya
Lung T Tran
Thomas C Anthony
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE69830555D1 publication Critical patent/DE69830555D1/de
Publication of DE69830555T2 publication Critical patent/DE69830555T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/332—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using thin films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/40—Protective measures on heads, e.g. against excessive temperature 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B19/00—Driving, starting, stopping record carriers not specifically of filamentary or web form, or of supports therefor; Control thereof; Control of operating function ; Driving both disc and head
    • G11B19/02—Control of operating function, e.g. switching from recording to reproducing
    • G11B19/04—Arrangements for preventing, inhibiting, or warning against double recording on the same blank or against other recording or reproducing malfunctions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/10—Structure or manufacture of housings or shields for heads
    • G11B5/11—Shielding of head against electric or magnetic fields
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
DE69830555T 1997-11-20 1998-10-23 Aufnahmekopf Expired - Lifetime DE69830555T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/974,420 US5930087A (en) 1997-11-20 1997-11-20 Robust recording head for near-contact operation
US974420 1997-11-20

Publications (2)

Publication Number Publication Date
DE69830555D1 true DE69830555D1 (de) 2005-07-21
DE69830555T2 DE69830555T2 (de) 2006-05-04

Family

ID=25522020

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69830555T Expired - Lifetime DE69830555T2 (de) 1997-11-20 1998-10-23 Aufnahmekopf

Country Status (4)

Country Link
US (1) US5930087A (de)
EP (1) EP0918319B1 (de)
JP (1) JPH11316916A (de)
DE (1) DE69830555T2 (de)

Families Citing this family (40)

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Publication number Priority date Publication date Assignee Title
US6064552A (en) * 1997-03-18 2000-05-16 Kabushiki Kaisha Toshiba Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode
JPH11354859A (ja) * 1998-06-05 1999-12-24 Read Rite Smi Kk 磁気抵抗素子と磁気ヘッド
US6552882B1 (en) 1998-09-01 2003-04-22 Nec Corporation Information reproduction head apparatus and information recording/reproduction system
US6219212B1 (en) 1998-09-08 2001-04-17 International Business Machines Corporation Magnetic tunnel junction head structure with insulating antiferromagnetic layer
US6137661A (en) * 1998-10-19 2000-10-24 Read-Rite Corporation System for providing a magnetoresistive head having higher efficiency
JP3180785B2 (ja) * 1998-11-27 2001-06-25 日本電気株式会社 ヨーク型磁気抵抗効果ヘッド、ヨーク型磁気抵抗効果複合薄膜ヘッドおよび磁気記憶装置
KR100594158B1 (ko) * 1999-03-25 2006-06-28 삼성전자주식회사 자기헤드 장치 및 제조방법
DE60019542T2 (de) * 1999-07-22 2006-02-23 Koninklijke Philips Electronics N.V. Verfahren zur herstellung einer vorrichtung mit magnetischem tunnelkontakt
US6510030B1 (en) 1999-08-17 2003-01-21 Seagate Technology, Llc Transducing head and method for forming a recessed shield for a transducing head
JP3468419B2 (ja) * 2000-03-17 2003-11-17 Ｔｄｋ株式会社 トンネル磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気ディスク装置
US6519124B1 (en) * 2000-03-27 2003-02-11 Tdk Corporation Magnetic tunnel junction read head using a hybrid, low-magnetization flux guide
US6785100B2 (en) * 2000-04-10 2004-08-31 Matsushita Electric Industrial Co., Ltd. Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device
US6504689B1 (en) * 2000-07-12 2003-01-07 International Business Machines Corporation Tunnel junction read head with flux guide coupled to and magnetically extending a recessed free layer to an air bearing surface
JP3839227B2 (ja) * 2000-07-28 2006-11-01 株式会社日立グローバルストレージテクノロジーズ 磁気ヘッド、磁気記録再生装置、磁気記録情報の再生方法及び磁気記録方法
US6680827B2 (en) * 2000-08-07 2004-01-20 Tdk Corporation Dual spin valve CPP MR with flux guide between free layers thereof
US6542343B1 (en) 2000-08-09 2003-04-01 International Business Machines Corporation Tunnel valve head design to lower resistance
US6809900B2 (en) * 2001-01-25 2004-10-26 Seagate Technology Llc Write head with magnetization controlled by spin-polarized electron current
US6661626B2 (en) 2001-03-20 2003-12-09 International Business Machines Corporation Tunnel valve sensor having a pinned layer structure with an iron oxide (Fe3O4) layer
US6597546B2 (en) 2001-04-19 2003-07-22 International Business Machines Corporation Tunnel junction sensor with an antiferromagnetic (AFM) coupled flux guide
US6833982B2 (en) 2001-05-03 2004-12-21 Hitachi Global Storage Technologies Netherlands B.V. Magnetic tunnel junction sensor with a free layer biased by longitudinal layers interfacing top surfaces of free layer extensions which extend beyond an active region of the sensor
US6721139B2 (en) 2001-05-31 2004-04-13 International Business Machines Corporation Tunnel valve sensor with narrow gap flux guide employing a lamination of FeN and NiFeMo
US6724587B2 (en) 2001-06-11 2004-04-20 International Business Machines Corporation Low temperature yoke type tunnel valve sensor
US7057864B2 (en) * 2001-07-10 2006-06-06 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for achieving physical connection between the flux guide and the free layer and that insulates the flux guide from the shields
US6785092B2 (en) * 2001-07-24 2004-08-31 Seagate Technology Llc White head for high anisotropy media
US6657825B2 (en) * 2001-08-02 2003-12-02 International Business Machines Corporation Self aligned magnetoresistive flux guide read head with exchange bias underneath free layer
US6930862B2 (en) * 2002-01-07 2005-08-16 Hitachi Global Storage Technologies Netherlands B.V. Shielded extraordinary magnetoresistance head
US6888705B2 (en) * 2002-01-18 2005-05-03 Hitachi Global Storage Technologies Netherlands B.V. High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS)
US6756648B2 (en) * 2002-03-25 2004-06-29 International Business Machines Corporation System and method for stabilizing a magnetic tunnel junction sensor
JP2004087024A (ja) * 2002-08-28 2004-03-18 Shinka Jitsugyo Kk 薄膜磁気ヘッド
JP4065787B2 (ja) * 2002-08-30 2008-03-26 株式会社日立グローバルストレージテクノロジーズ 磁気ヘッドおよび磁気記録再生装置
US20080043376A1 (en) * 2002-09-13 2008-02-21 Hitachi, Ltd. Magnetic resistive head and magnetic recording apparatus
JP4564706B2 (ja) * 2002-09-13 2010-10-20 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果磁気ヘッド及び磁気記録装置
US7394626B2 (en) 2002-11-01 2008-07-01 Nec Corporation Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
JP2007158369A (ja) * 2002-11-01 2007-06-21 Nec Corp 磁気抵抗デバイス及びその製造方法
US6943997B2 (en) * 2003-09-09 2005-09-13 Hitachi Global Storage Technologies Netherlands B.V. Sensor with improved stabilization and track definition
US7652855B2 (en) * 2006-11-09 2010-01-26 Hitachi Global Storage Technologies Netherlands B.V. Magnetic sensor with extended free layer and overlaid leads
US7935435B2 (en) * 2008-08-08 2011-05-03 Seagate Technology Llc Magnetic memory cell construction
US8390283B2 (en) * 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
JP2011086331A (ja) * 2009-10-14 2011-04-28 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果型磁気ヘッド
US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor

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EP0672303B1 (de) * 1993-10-06 1997-12-03 Koninklijke Philips Electronics N.V. Magnetoresistive anordnung und diese verwendender magnetkopf
WO1996011469A1 (en) * 1994-10-05 1996-04-18 Philips Electronics N.V. Magnetic multilayer device including a resonant-tunneling double-barrier structure
US5493467A (en) * 1994-12-27 1996-02-20 International Business Machines Corporation Yoke spin valve MR read head
US5629922A (en) * 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
JP3217703B2 (ja) * 1995-09-01 2001-10-15 株式会社東芝 磁性体デバイス及びそれを用いた磁気センサ
US5695864A (en) * 1995-09-28 1997-12-09 International Business Machines Corporation Electronic device using magnetic components
EP0789250A3 (de) * 1996-02-12 1997-10-01 Read Rite Corp Dünnschicht-Riesenmagnetoresistiver Wandler mit Fluxleitungsanordnung
US5627704A (en) * 1996-02-12 1997-05-06 Read-Rite Corporation Thin film giant magnetoresistive CPP transducer with flux guide yoke structure
US5696656A (en) * 1996-09-06 1997-12-09 International Business Machines Corporation Highly sensitive orthogonal spin valve read head
US5757056A (en) * 1996-11-12 1998-05-26 University Of Delaware Multiple magnetic tunnel structures
US5801984A (en) * 1996-11-27 1998-09-01 International Business Machines Corporation Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment

Also Published As

Publication number Publication date
EP0918319B1 (de) 2005-06-15
JPH11316916A (ja) 1999-11-16
EP0918319A1 (de) 1999-05-26
DE69830555T2 (de) 2006-05-04
US5930087A (en) 1999-07-27

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE

8364 No opposition during term of opposition