DE69703028T2 - Siliziumeinkristall ohne Kristalldefekte im peripheren Waferteil - Google Patents

Siliziumeinkristall ohne Kristalldefekte im peripheren Waferteil

Info

Publication number
DE69703028T2
DE69703028T2 DE69703028T DE69703028T DE69703028T2 DE 69703028 T2 DE69703028 T2 DE 69703028T2 DE 69703028 T DE69703028 T DE 69703028T DE 69703028 T DE69703028 T DE 69703028T DE 69703028 T2 DE69703028 T2 DE 69703028T2
Authority
DE
Germany
Prior art keywords
silicon single
crystal
wafer part
single crystal
peripheral wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69703028T
Other languages
English (en)
Other versions
DE69703028D1 (de
Inventor
Kiyotaka Takano
Makoto Iida
Eiichi Iino
Masanori Kimura
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69703028D1 publication Critical patent/DE69703028D1/de
Application granted granted Critical
Publication of DE69703028T2 publication Critical patent/DE69703028T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/913—Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69703028T 1996-01-19 1997-01-17 Siliziumeinkristall ohne Kristalldefekte im peripheren Waferteil Expired - Lifetime DE69703028T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02592896A JP4020987B2 (ja) 1996-01-19 1996-01-19 ウエーハ周辺部に結晶欠陥がないシリコン単結晶およびその製造方法
PCT/JP1997/000090 WO1997026393A1 (fr) 1996-01-19 1997-01-17 Monocristal de silicium, sans defaut du cristal dans la partie peripherique de la tranche, et procede pour produire ce monocristal

Publications (2)

Publication Number Publication Date
DE69703028D1 DE69703028D1 (de) 2000-10-12
DE69703028T2 true DE69703028T2 (de) 2001-05-03

Family

ID=12179446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69703028T Expired - Lifetime DE69703028T2 (de) 1996-01-19 1997-01-17 Siliziumeinkristall ohne Kristalldefekte im peripheren Waferteil

Country Status (6)

Country Link
US (1) US6120749A (de)
EP (1) EP0875607B1 (de)
JP (1) JP4020987B2 (de)
KR (1) KR100453850B1 (de)
DE (1) DE69703028T2 (de)
WO (1) WO1997026393A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
SG105513A1 (en) 1997-04-09 2004-08-27 Memc Electronics Materials Inc Low defect density, ideal oxygen precipitating silicon
CN1253610C (zh) * 1997-04-09 2006-04-26 Memc电子材料有限公司 低缺陷密度、自间隙原子受控制的硅
KR100395181B1 (ko) * 1997-08-26 2003-08-21 미츠비시 스미토모 실리콘 주식회사 고품질 실리콘 단결정 및 그 제조방법
JP3596257B2 (ja) * 1997-11-19 2004-12-02 三菱住友シリコン株式会社 シリコン単結晶ウェーハの製造方法
WO2000000674A2 (en) 1998-06-26 2000-01-06 Memc Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
EP1114454A2 (de) 1998-09-02 2001-07-11 MEMC Electronic Materials, Inc. Silizium auf isolator struktur aus einem einkristallsilizium mit niedriger fehlerdichte
EP1713121A3 (de) * 1998-09-02 2007-08-15 MEMC Electronic Materials, Inc. Silizium auf Isolator Struktur aus einem Einkristallsilizium mit niedriger Fehlerdichte
CN1313651C (zh) 1998-10-14 2007-05-02 Memc电子材料有限公司 基本无生长缺陷的外延硅片
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
EP1125008B1 (de) 1998-10-14 2003-06-18 MEMC Electronic Materials, Inc. Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte
US6261874B1 (en) * 2000-06-14 2001-07-17 International Rectifier Corp. Fast recovery diode and method for its manufacture
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
CN100348782C (zh) 2001-01-26 2007-11-14 Memc电子材料有限公司 具有基本上没有氧化诱生堆垛层错的空位为主的芯的低缺陷密度硅
US6669775B2 (en) 2001-12-06 2003-12-30 Seh America, Inc. High resistivity silicon wafer produced by a controlled pull rate czochralski method
JP4716372B2 (ja) * 2005-09-27 2011-07-06 コバレントマテリアル株式会社 シリコンウエハの製造方法
TWI404836B (zh) 2006-05-19 2013-08-11 Memc Electronic Materials 控制由單晶矽在卓式成長過程側向表面產生的聚集點缺陷及氧團簇的形成
DE102006034786B4 (de) * 2006-07-27 2011-01-20 Siltronic Ag Monokristalline Halbleiterscheibe mit defektreduzierten Bereichen und Verfahren zur Ausheilung GOI-relevanter Defekte in einer monokristallinen Halbleiterscheibe
KR101222217B1 (ko) 2010-06-24 2013-01-15 주식회사 엘지실트론 단결정 잉곳 및 그 제조방법과 이를 통해 제조된 웨이퍼
JP5993550B2 (ja) * 2011-03-08 2016-09-14 信越半導体株式会社 シリコン単結晶ウェーハの製造方法
CN104975341A (zh) * 2015-06-24 2015-10-14 吴倩颖 一种单晶拉制增加投料的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0633235B2 (ja) * 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
JP2758093B2 (ja) * 1991-10-07 1998-05-25 信越半導体株式会社 半導体ウェーハの製造方法
JP2521007B2 (ja) * 1992-06-30 1996-07-31 九州電子金属株式会社 シリコン単結晶の製造方法
JPH06279188A (ja) * 1993-03-26 1994-10-04 Mitsubishi Materials Corp シリコン単結晶棒およびその引上げ方法
KR0124755Y1 (ko) * 1993-09-04 1999-02-18 곽노권 반도체 팩키지 성형용 몰드프레스
JP2686223B2 (ja) * 1993-11-30 1997-12-08 住友シチックス株式会社 単結晶製造装置
IT1280041B1 (it) * 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
DE4414947C2 (de) * 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls aus Silicium
JPH08337490A (ja) * 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法

Also Published As

Publication number Publication date
KR19990077345A (ko) 1999-10-25
DE69703028D1 (de) 2000-10-12
EP0875607A1 (de) 1998-11-04
JPH09202690A (ja) 1997-08-05
KR100453850B1 (ko) 2005-01-15
WO1997026393A1 (fr) 1997-07-24
US6120749A (en) 2000-09-19
EP0875607A4 (de) 1999-04-14
EP0875607B1 (de) 2000-09-06
JP4020987B2 (ja) 2007-12-12

Similar Documents

Publication Publication Date Title
DE69703028T2 (de) Siliziumeinkristall ohne Kristalldefekte im peripheren Waferteil
GB9618897D0 (en) Micro defects in silicon wafers
DE69421248T2 (de) Polierteil und Wafer-Poliervorrichtung
DE69806578D1 (de) Waferhaltevorrichtung
NO872786L (no) FremgangsmŸte for rengjing av rsystem i badeanlegg og anordning for gjennomfing av fremgangsmŸten.
KR960012421A (ko) 웨이퍼 지지 보우트
EP1074643A4 (de) Einkristallsiliziumwafer mit wenigen kristalldefekten und verfahren zu dessen herstellung
EP0685877A3 (de) Poliermittel zur Polierung von Siliziumscheiben und Verfahren zum Polieren unter Verwendung desselben.
KR960012414A (ko) 웨이퍼 검사장치
KR970003247U (ko) 웨이퍼 검사장치
DE69730561D1 (de) Monolithisches Halbleiter-Bauelement
DE59705206D1 (de) Waferrahmen
KR970064180U (ko) 불순물 제거기능을 갖는 웨이퍼 세정장치
KR960015613U (ko) 웨이퍼 척
KR960003086U (ko) 깨짐 방지수단이 구비된 실리콘 웨이퍼
DE69500796D1 (de) Ladungsvorrichtung für Halbleiter-Plättchen
KR960025430U (ko) 스테이지 경사 보상이 가능한 웨이퍼 척 장치
KR960025437U (ko) 웨이퍼 홀딩용 페데스탈
KR960019120U (ko) 웨이퍼의 어닐장치
KR960025432U (ko) 웨이퍼 홀딩장치
KR960006354U (ko) 웨이퍼 고정 장치
KR960015594U (ko) 웨이퍼 식각장치에서의 웨이퍼 안착기구
KR960006359U (ko) 웨이퍼 홀딩 척
KR960006351U (ko) 웨이퍼 카세트의 안착장치
KR960025450U (ko) 웨이퍼 정렬 장치

Legal Events

Date Code Title Description
8364 No opposition during term of opposition