DE69630958T2 - Programmierbarer nichtflüchtiger zweiwegschalter für programmierbare logik - Google Patents
Programmierbarer nichtflüchtiger zweiwegschalter für programmierbare logik Download PDFInfo
- Publication number
- DE69630958T2 DE69630958T2 DE69630958T DE69630958T DE69630958T2 DE 69630958 T2 DE69630958 T2 DE 69630958T2 DE 69630958 T DE69630958 T DE 69630958T DE 69630958 T DE69630958 T DE 69630958T DE 69630958 T2 DE69630958 T2 DE 69630958T2
- Authority
- DE
- Germany
- Prior art keywords
- gate
- source
- volatile
- drain
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007667 floating Methods 0.000 claims abstract description 37
- 230000002457 bidirectional effect Effects 0.000 claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000014759 maintenance of location Effects 0.000 claims description 10
- 230000006870 function Effects 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 5
- 230000005641 tunneling Effects 0.000 abstract description 4
- 239000003990 capacitor Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Read Only Memory (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US506828 | 1995-07-25 | ||
| US08/506,828 US5640344A (en) | 1995-07-25 | 1995-07-25 | Programmable non-volatile bidirectional switch for programmable logic |
| PCT/US1996/009889 WO1997005624A1 (en) | 1995-07-25 | 1996-06-14 | Programmable non-volatile bidirectional switch for programmable logic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69630958D1 DE69630958D1 (de) | 2004-01-15 |
| DE69630958T2 true DE69630958T2 (de) | 2004-10-28 |
Family
ID=24016170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69630958T Expired - Fee Related DE69630958T2 (de) | 1995-07-25 | 1996-06-14 | Programmierbarer nichtflüchtiger zweiwegschalter für programmierbare logik |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5640344A (enExample) |
| EP (2) | EP1345235A1 (enExample) |
| JP (1) | JP3881020B2 (enExample) |
| KR (1) | KR100397062B1 (enExample) |
| CN (1) | CN1146921C (enExample) |
| AT (1) | ATE255766T1 (enExample) |
| AU (1) | AU6268996A (enExample) |
| DE (1) | DE69630958T2 (enExample) |
| WO (1) | WO1997005624A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367208A (en) | 1986-09-19 | 1994-11-22 | Actel Corporation | Reconfigurable programmable interconnect architecture |
| US5838040A (en) * | 1997-03-31 | 1998-11-17 | Gatefield Corporation | Nonvolatile reprogrammable interconnect cell with FN tunneling in sense |
| US5912836A (en) * | 1997-12-01 | 1999-06-15 | Amic Technology, Inc. | Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array |
| DE29812092U1 (de) * | 1998-07-07 | 1999-11-18 | iC-Haus GmbH, 55294 Bodenheim | Elektronischer Wechselspannungsschalter |
| US6201734B1 (en) * | 1998-09-25 | 2001-03-13 | Sandisk Corporation | Programmable impedance device |
| KR100734637B1 (ko) * | 2000-04-14 | 2007-07-02 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 반도체 디바이스, 메모리 셀 및 메모리 셀 구조물과 그 제어 방법 |
| US6531887B2 (en) * | 2001-06-01 | 2003-03-11 | Macronix International Co., Ltd. | One cell programmable switch using non-volatile cell |
| US6577161B2 (en) * | 2001-06-01 | 2003-06-10 | Macronix International Co., Ltd. | One cell programmable switch using non-volatile cell with unidirectional and bidirectional states |
| US6545504B2 (en) * | 2001-06-01 | 2003-04-08 | Macronix International Co., Ltd. | Four state programmable interconnect device for bus line and I/O pad |
| US20050097499A1 (en) * | 2003-11-03 | 2005-05-05 | Macronix International Co., Ltd. | In-circuit configuration architecture with non-volatile configuration store for embedded configurable logic array |
| US20050102573A1 (en) * | 2003-11-03 | 2005-05-12 | Macronix International Co., Ltd. | In-circuit configuration architecture for embedded configurable logic array |
| US7209392B2 (en) * | 2004-07-20 | 2007-04-24 | Ememory Technology Inc. | Single poly non-volatile memory |
| US7430137B2 (en) * | 2004-09-09 | 2008-09-30 | Actel Corporation | Non-volatile memory cells in a field programmable gate array |
| US7020020B1 (en) * | 2004-09-21 | 2006-03-28 | Atmel Corporation | Low voltage non-volatile memory cells using twin bit line current sensing |
| US7638855B2 (en) * | 2005-05-06 | 2009-12-29 | Macronix International Co., Ltd. | Anti-fuse one-time-programmable nonvolatile memory |
| US7368789B1 (en) | 2005-06-13 | 2008-05-06 | Actel Corporation | Non-volatile programmable memory cell and array for programmable logic array |
| US7768056B1 (en) * | 2005-06-13 | 2010-08-03 | Actel Corporation | Isolated-nitride-region non-volatile memory cell and fabrication method |
| US7538379B1 (en) | 2005-06-15 | 2009-05-26 | Actel Corporation | Non-volatile two-transistor programmable logic cell and array layout |
| US7285818B2 (en) * | 2005-06-15 | 2007-10-23 | Actel Corporation | Non-volatile two-transistor programmable logic cell and array layout |
| US7245535B2 (en) * | 2005-09-21 | 2007-07-17 | Actel Corporation | Non-volatile programmable memory cell for programmable logic array |
| US7301821B1 (en) | 2005-10-13 | 2007-11-27 | Actel Corporation | Volatile data storage in a non-volatile memory cell array |
| US9875788B2 (en) * | 2010-03-25 | 2018-01-23 | Qualcomm Incorporated | Low-power 5T SRAM with improved stability and reduced bitcell size |
| JP6272713B2 (ja) | 2013-03-25 | 2018-01-31 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス及び半導体装置 |
| US9847133B2 (en) * | 2016-01-19 | 2017-12-19 | Ememory Technology Inc. | Memory array capable of performing byte erase operation |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4558344A (en) * | 1982-01-29 | 1985-12-10 | Seeq Technology, Inc. | Electrically-programmable and electrically-erasable MOS memory device |
| US4573144A (en) * | 1982-09-30 | 1986-02-25 | Motorola, Inc. | Common floating gate programmable link |
| US4896296A (en) * | 1985-03-04 | 1990-01-23 | Lattice Semiconductor Corporation | Programmable logic device configurable input/output cell |
| US4879688A (en) * | 1985-03-04 | 1989-11-07 | Lattice Semiconductor Corporation | In-system programmable logic device |
| US5440518A (en) * | 1991-06-12 | 1995-08-08 | Hazani; Emanuel | Non-volatile memory circuits, architecture and methods |
| US5005155A (en) * | 1988-06-15 | 1991-04-02 | Advanced Micro Devices, Inc. | Optimized electrically erasable PLA cell for minimum read disturb |
| JPH0447595A (ja) * | 1990-06-15 | 1992-02-17 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| US5247478A (en) * | 1992-03-06 | 1993-09-21 | Altera Corporation | Programmable transfer-devices |
| FR2703501B1 (fr) * | 1993-04-01 | 1995-05-19 | Gemplus Card Int | Circuit intégré pour carte à mémoire et procédé de décomptage d'unités dans une carte à mémoire. |
| US5574466A (en) * | 1995-03-31 | 1996-11-12 | Motorola, Inc. | Method for wireless communication system planning |
-
1995
- 1995-07-25 US US08/506,828 patent/US5640344A/en not_active Expired - Lifetime
-
1996
- 1996-06-14 EP EP03012466A patent/EP1345235A1/en not_active Withdrawn
- 1996-06-14 EP EP96921471A patent/EP0840930B1/en not_active Expired - Lifetime
- 1996-06-14 JP JP50758097A patent/JP3881020B2/ja not_active Expired - Fee Related
- 1996-06-14 AT AT96921471T patent/ATE255766T1/de not_active IP Right Cessation
- 1996-06-14 AU AU62689/96A patent/AU6268996A/en not_active Abandoned
- 1996-06-14 CN CNB961969644A patent/CN1146921C/zh not_active Expired - Fee Related
- 1996-06-14 KR KR10-1998-0700209A patent/KR100397062B1/ko not_active Expired - Fee Related
- 1996-06-14 DE DE69630958T patent/DE69630958T2/de not_active Expired - Fee Related
- 1996-06-14 WO PCT/US1996/009889 patent/WO1997005624A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US5640344A (en) | 1997-06-17 |
| CN1146921C (zh) | 2004-04-21 |
| CN1196134A (zh) | 1998-10-14 |
| JP3881020B2 (ja) | 2007-02-14 |
| EP1345235A1 (en) | 2003-09-17 |
| JPH11510296A (ja) | 1999-09-07 |
| EP0840930B1 (en) | 2003-12-03 |
| ATE255766T1 (de) | 2003-12-15 |
| KR19990028907A (ko) | 1999-04-15 |
| AU6268996A (en) | 1997-02-26 |
| EP0840930A1 (en) | 1998-05-13 |
| KR100397062B1 (ko) | 2003-10-17 |
| DE69630958D1 (de) | 2004-01-15 |
| WO1997005624A1 (en) | 1997-02-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: ACTEL CORP., MOUNTAIN VIEW, CALIF., US |
|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |