JP3881020B2 - プログラム可能論理回路用のプログラム可能不揮発性両方向スイッチ - Google Patents

プログラム可能論理回路用のプログラム可能不揮発性両方向スイッチ Download PDF

Info

Publication number
JP3881020B2
JP3881020B2 JP50758097A JP50758097A JP3881020B2 JP 3881020 B2 JP3881020 B2 JP 3881020B2 JP 50758097 A JP50758097 A JP 50758097A JP 50758097 A JP50758097 A JP 50758097A JP 3881020 B2 JP3881020 B2 JP 3881020B2
Authority
JP
Japan
Prior art keywords
terminal
programming
transistor element
volatile
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP50758097A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11510296A (ja
JPH11510296A5 (enExample
Inventor
パニ，ピーター・エム
ティン，ベンジャミン・エス
マ，ベニー
Original Assignee
アドヴァンテージ・ロジック・インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アドヴァンテージ・ロジック・インコーポレーテッド filed Critical アドヴァンテージ・ロジック・インコーポレーテッド
Publication of JPH11510296A publication Critical patent/JPH11510296A/ja
Publication of JPH11510296A5 publication Critical patent/JPH11510296A5/ja
Application granted granted Critical
Publication of JP3881020B2 publication Critical patent/JP3881020B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electronic Switches (AREA)
JP50758097A 1995-07-25 1996-06-14 プログラム可能論理回路用のプログラム可能不揮発性両方向スイッチ Expired - Fee Related JP3881020B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/506,828 1995-07-25
US08/506,828 US5640344A (en) 1995-07-25 1995-07-25 Programmable non-volatile bidirectional switch for programmable logic
PCT/US1996/009889 WO1997005624A1 (en) 1995-07-25 1996-06-14 Programmable non-volatile bidirectional switch for programmable logic

Publications (3)

Publication Number Publication Date
JPH11510296A JPH11510296A (ja) 1999-09-07
JPH11510296A5 JPH11510296A5 (enExample) 2004-07-15
JP3881020B2 true JP3881020B2 (ja) 2007-02-14

Family

ID=24016170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50758097A Expired - Fee Related JP3881020B2 (ja) 1995-07-25 1996-06-14 プログラム可能論理回路用のプログラム可能不揮発性両方向スイッチ

Country Status (9)

Country Link
US (1) US5640344A (enExample)
EP (2) EP1345235A1 (enExample)
JP (1) JP3881020B2 (enExample)
KR (1) KR100397062B1 (enExample)
CN (1) CN1146921C (enExample)
AT (1) ATE255766T1 (enExample)
AU (1) AU6268996A (enExample)
DE (1) DE69630958T2 (enExample)
WO (1) WO1997005624A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367208A (en) 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US5838040A (en) * 1997-03-31 1998-11-17 Gatefield Corporation Nonvolatile reprogrammable interconnect cell with FN tunneling in sense
US5912836A (en) * 1997-12-01 1999-06-15 Amic Technology, Inc. Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array
DE29812092U1 (de) * 1998-07-07 1999-11-18 iC-Haus GmbH, 55294 Bodenheim Elektronischer Wechselspannungsschalter
US6201734B1 (en) * 1998-09-25 2001-03-13 Sandisk Corporation Programmable impedance device
KR100734637B1 (ko) * 2000-04-14 2007-07-02 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스, 메모리 셀 및 메모리 셀 구조물과 그 제어 방법
US6531887B2 (en) * 2001-06-01 2003-03-11 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell
US6577161B2 (en) * 2001-06-01 2003-06-10 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell with unidirectional and bidirectional states
US6545504B2 (en) * 2001-06-01 2003-04-08 Macronix International Co., Ltd. Four state programmable interconnect device for bus line and I/O pad
US20050097499A1 (en) * 2003-11-03 2005-05-05 Macronix International Co., Ltd. In-circuit configuration architecture with non-volatile configuration store for embedded configurable logic array
US20050102573A1 (en) * 2003-11-03 2005-05-12 Macronix International Co., Ltd. In-circuit configuration architecture for embedded configurable logic array
US7209392B2 (en) * 2004-07-20 2007-04-24 Ememory Technology Inc. Single poly non-volatile memory
US7430137B2 (en) * 2004-09-09 2008-09-30 Actel Corporation Non-volatile memory cells in a field programmable gate array
US7020020B1 (en) * 2004-09-21 2006-03-28 Atmel Corporation Low voltage non-volatile memory cells using twin bit line current sensing
US7638855B2 (en) * 2005-05-06 2009-12-29 Macronix International Co., Ltd. Anti-fuse one-time-programmable nonvolatile memory
US7368789B1 (en) 2005-06-13 2008-05-06 Actel Corporation Non-volatile programmable memory cell and array for programmable logic array
US7768056B1 (en) * 2005-06-13 2010-08-03 Actel Corporation Isolated-nitride-region non-volatile memory cell and fabrication method
US7538379B1 (en) 2005-06-15 2009-05-26 Actel Corporation Non-volatile two-transistor programmable logic cell and array layout
US7285818B2 (en) * 2005-06-15 2007-10-23 Actel Corporation Non-volatile two-transistor programmable logic cell and array layout
US7245535B2 (en) * 2005-09-21 2007-07-17 Actel Corporation Non-volatile programmable memory cell for programmable logic array
US7301821B1 (en) 2005-10-13 2007-11-27 Actel Corporation Volatile data storage in a non-volatile memory cell array
US9875788B2 (en) * 2010-03-25 2018-01-23 Qualcomm Incorporated Low-power 5T SRAM with improved stability and reduced bitcell size
JP6272713B2 (ja) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
US4573144A (en) * 1982-09-30 1986-02-25 Motorola, Inc. Common floating gate programmable link
US4896296A (en) * 1985-03-04 1990-01-23 Lattice Semiconductor Corporation Programmable logic device configurable input/output cell
US4879688A (en) * 1985-03-04 1989-11-07 Lattice Semiconductor Corporation In-system programmable logic device
US5440518A (en) * 1991-06-12 1995-08-08 Hazani; Emanuel Non-volatile memory circuits, architecture and methods
US5005155A (en) * 1988-06-15 1991-04-02 Advanced Micro Devices, Inc. Optimized electrically erasable PLA cell for minimum read disturb
JPH0447595A (ja) * 1990-06-15 1992-02-17 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5247478A (en) * 1992-03-06 1993-09-21 Altera Corporation Programmable transfer-devices
FR2703501B1 (fr) * 1993-04-01 1995-05-19 Gemplus Card Int Circuit intégré pour carte à mémoire et procédé de décomptage d'unités dans une carte à mémoire.
US5574466A (en) * 1995-03-31 1996-11-12 Motorola, Inc. Method for wireless communication system planning

Also Published As

Publication number Publication date
US5640344A (en) 1997-06-17
CN1146921C (zh) 2004-04-21
CN1196134A (zh) 1998-10-14
EP1345235A1 (en) 2003-09-17
JPH11510296A (ja) 1999-09-07
EP0840930B1 (en) 2003-12-03
ATE255766T1 (de) 2003-12-15
KR19990028907A (ko) 1999-04-15
AU6268996A (en) 1997-02-26
EP0840930A1 (en) 1998-05-13
KR100397062B1 (ko) 2003-10-17
DE69630958T2 (de) 2004-10-28
DE69630958D1 (de) 2004-01-15
WO1997005624A1 (en) 1997-02-13

Similar Documents

Publication Publication Date Title
JP3881020B2 (ja) プログラム可能論理回路用のプログラム可能不揮発性両方向スイッチ
US5097152A (en) Buffer circuit used in a semiconductor device operating by different supply potentials and method of operating the same
US4980859A (en) NOVRAM cell using two differential decouplable nonvolatile memory elements
US6028787A (en) Nonvolatile static memory circuit
US5796656A (en) Row decoder circuit for PMOS non-volatile memory cell which uses electron tunneling for programming and erasing
US6531887B2 (en) One cell programmable switch using non-volatile cell
US4733371A (en) Semiconductor memory device with high voltage switch
US5978263A (en) Negative voltage switch architecture for a nonvolatile memory
EP0586473A4 (enExample)
JPH0143400B2 (enExample)
WO1997022971A9 (en) A negative voltage switch architecture for a nonvolatile memory
US6335894B1 (en) Semiconductor integrated circuit device, method of investigating cause of failure occurring in semiconductor integrated circuit device and method of verifying operation of semiconductor integrated circuit device
US5051956A (en) Memory cell having means for maintaining the gate and substrate at the same potential
US5506518A (en) Antifuse-based programmable logic circuit
US5721703A (en) Reprogrammable option select circuit
US6243296B1 (en) Compact electrically erasable memory cells and arrays
US4656609A (en) Semiconductor memory device
EP0377840A2 (en) Nonvolatile semiconductor memory device having reference potential generating circuit
EP0244628A1 (en) Sense amplifier for a semiconductor memory device
KR100641761B1 (ko) 디코더, 집적 회로 및 프로그래밍 가능한 로직 장치
US6577161B2 (en) One cell programmable switch using non-volatile cell with unidirectional and bidirectional states
US6545504B2 (en) Four state programmable interconnect device for bus line and I/O pad
EP0377841A2 (en) Semiconductor integrated circuit capable of preventing occurrence of erroneous operation due to noise
EP0427260A2 (en) Non-volatile memory devices
KR0182873B1 (ko) 프로그램 가능한 데이타 출력 회로 및 이를 이용한 솔리드 스테이트 점퍼

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050920

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051219

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060509

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060804

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20060928

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061010

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061109

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees