KR100397062B1 - 프로그램가능논리디바이스용프로그램가능비휘발성양방향스위치 - Google Patents

프로그램가능논리디바이스용프로그램가능비휘발성양방향스위치 Download PDF

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Publication number
KR100397062B1
KR100397062B1 KR10-1998-0700209A KR19980700209A KR100397062B1 KR 100397062 B1 KR100397062 B1 KR 100397062B1 KR 19980700209 A KR19980700209 A KR 19980700209A KR 100397062 B1 KR100397062 B1 KR 100397062B1
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KR
South Korea
Prior art keywords
terminal
oxide
switch
floating gate
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1998-0700209A
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English (en)
Korean (ko)
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KR19990028907A (ko
Inventor
피터 엠. 패니
벤자민 에스. 팅
베니 마
Original Assignee
어드밴티지 로직 인코퍼레이티드
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Application filed by 어드밴티지 로직 인코퍼레이티드 filed Critical 어드밴티지 로직 인코퍼레이티드
Publication of KR19990028907A publication Critical patent/KR19990028907A/ko
Application granted granted Critical
Publication of KR100397062B1 publication Critical patent/KR100397062B1/ko
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electronic Switches (AREA)
KR10-1998-0700209A 1995-07-25 1996-06-14 프로그램가능논리디바이스용프로그램가능비휘발성양방향스위치 Expired - Fee Related KR100397062B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/506,828 US5640344A (en) 1995-07-25 1995-07-25 Programmable non-volatile bidirectional switch for programmable logic
US8/56,828 1995-07-25
US08/506,828 1995-07-25

Publications (2)

Publication Number Publication Date
KR19990028907A KR19990028907A (ko) 1999-04-15
KR100397062B1 true KR100397062B1 (ko) 2003-10-17

Family

ID=24016170

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0700209A Expired - Fee Related KR100397062B1 (ko) 1995-07-25 1996-06-14 프로그램가능논리디바이스용프로그램가능비휘발성양방향스위치

Country Status (9)

Country Link
US (1) US5640344A (enExample)
EP (2) EP1345235A1 (enExample)
JP (1) JP3881020B2 (enExample)
KR (1) KR100397062B1 (enExample)
CN (1) CN1146921C (enExample)
AT (1) ATE255766T1 (enExample)
AU (1) AU6268996A (enExample)
DE (1) DE69630958T2 (enExample)
WO (1) WO1997005624A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367208A (en) 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US5838040A (en) * 1997-03-31 1998-11-17 Gatefield Corporation Nonvolatile reprogrammable interconnect cell with FN tunneling in sense
US5912836A (en) * 1997-12-01 1999-06-15 Amic Technology, Inc. Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array
DE29812092U1 (de) * 1998-07-07 1999-11-18 iC-Haus GmbH, 55294 Bodenheim Elektronischer Wechselspannungsschalter
US6201734B1 (en) * 1998-09-25 2001-03-13 Sandisk Corporation Programmable impedance device
WO2001080247A1 (en) * 2000-04-14 2001-10-25 Koninklijke Philips Electronics N.V. Semiconductor device
US6577161B2 (en) * 2001-06-01 2003-06-10 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell with unidirectional and bidirectional states
US6531887B2 (en) * 2001-06-01 2003-03-11 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell
US6545504B2 (en) * 2001-06-01 2003-04-08 Macronix International Co., Ltd. Four state programmable interconnect device for bus line and I/O pad
US20050102573A1 (en) * 2003-11-03 2005-05-12 Macronix International Co., Ltd. In-circuit configuration architecture for embedded configurable logic array
US20050097499A1 (en) * 2003-11-03 2005-05-05 Macronix International Co., Ltd. In-circuit configuration architecture with non-volatile configuration store for embedded configurable logic array
US7209392B2 (en) * 2004-07-20 2007-04-24 Ememory Technology Inc. Single poly non-volatile memory
US7430137B2 (en) * 2004-09-09 2008-09-30 Actel Corporation Non-volatile memory cells in a field programmable gate array
US7020020B1 (en) * 2004-09-21 2006-03-28 Atmel Corporation Low voltage non-volatile memory cells using twin bit line current sensing
US7638855B2 (en) 2005-05-06 2009-12-29 Macronix International Co., Ltd. Anti-fuse one-time-programmable nonvolatile memory
US7368789B1 (en) * 2005-06-13 2008-05-06 Actel Corporation Non-volatile programmable memory cell and array for programmable logic array
US7768056B1 (en) * 2005-06-13 2010-08-03 Actel Corporation Isolated-nitride-region non-volatile memory cell and fabrication method
US7285818B2 (en) * 2005-06-15 2007-10-23 Actel Corporation Non-volatile two-transistor programmable logic cell and array layout
US7538379B1 (en) 2005-06-15 2009-05-26 Actel Corporation Non-volatile two-transistor programmable logic cell and array layout
US7245535B2 (en) * 2005-09-21 2007-07-17 Actel Corporation Non-volatile programmable memory cell for programmable logic array
US7301821B1 (en) 2005-10-13 2007-11-27 Actel Corporation Volatile data storage in a non-volatile memory cell array
US9875788B2 (en) * 2010-03-25 2018-01-23 Qualcomm Incorporated Low-power 5T SRAM with improved stability and reduced bitcell size
JP6272713B2 (ja) * 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
US4573144A (en) * 1982-09-30 1986-02-25 Motorola, Inc. Common floating gate programmable link
US4879688A (en) * 1985-03-04 1989-11-07 Lattice Semiconductor Corporation In-system programmable logic device
US4896296A (en) * 1985-03-04 1990-01-23 Lattice Semiconductor Corporation Programmable logic device configurable input/output cell
US5440518A (en) * 1991-06-12 1995-08-08 Hazani; Emanuel Non-volatile memory circuits, architecture and methods
US5005155A (en) * 1988-06-15 1991-04-02 Advanced Micro Devices, Inc. Optimized electrically erasable PLA cell for minimum read disturb
JPH0447595A (ja) * 1990-06-15 1992-02-17 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5247478A (en) * 1992-03-06 1993-09-21 Altera Corporation Programmable transfer-devices
FR2703501B1 (fr) * 1993-04-01 1995-05-19 Gemplus Card Int Circuit intégré pour carte à mémoire et procédé de décomptage d'unités dans une carte à mémoire.
US5574466A (en) * 1995-03-31 1996-11-12 Motorola, Inc. Method for wireless communication system planning

Also Published As

Publication number Publication date
DE69630958T2 (de) 2004-10-28
EP0840930B1 (en) 2003-12-03
CN1196134A (zh) 1998-10-14
EP0840930A1 (en) 1998-05-13
JPH11510296A (ja) 1999-09-07
KR19990028907A (ko) 1999-04-15
EP1345235A1 (en) 2003-09-17
DE69630958D1 (de) 2004-01-15
US5640344A (en) 1997-06-17
CN1146921C (zh) 2004-04-21
JP3881020B2 (ja) 2007-02-14
ATE255766T1 (de) 2003-12-15
AU6268996A (en) 1997-02-26
WO1997005624A1 (en) 1997-02-13

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