CN1146921C - 用于可编程逻辑的可编程非易失双向开关 - Google Patents

用于可编程逻辑的可编程非易失双向开关 Download PDF

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Publication number
CN1146921C
CN1146921C CNB961969644A CN96196964A CN1146921C CN 1146921 C CN1146921 C CN 1146921C CN B961969644 A CNB961969644 A CN B961969644A CN 96196964 A CN96196964 A CN 96196964A CN 1146921 C CN1146921 C CN 1146921C
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CN
China
Prior art keywords
source
floating boom
oxide
grid
control line
Prior art date
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Expired - Fee Related
Application number
CNB961969644A
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English (en)
Chinese (zh)
Other versions
CN1196134A (zh
Inventor
Pm
P·M·帕尼
B·S·丁
B·马
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Microsemi SoC Corp
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Advantage Logic Inc
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Publication date
Application filed by Advantage Logic Inc filed Critical Advantage Logic Inc
Publication of CN1196134A publication Critical patent/CN1196134A/zh
Application granted granted Critical
Publication of CN1146921C publication Critical patent/CN1146921C/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electronic Switches (AREA)
CNB961969644A 1995-07-25 1996-06-14 用于可编程逻辑的可编程非易失双向开关 Expired - Fee Related CN1146921C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/506,828 1995-07-25
US08/506,828 US5640344A (en) 1995-07-25 1995-07-25 Programmable non-volatile bidirectional switch for programmable logic

Publications (2)

Publication Number Publication Date
CN1196134A CN1196134A (zh) 1998-10-14
CN1146921C true CN1146921C (zh) 2004-04-21

Family

ID=24016170

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB961969644A Expired - Fee Related CN1146921C (zh) 1995-07-25 1996-06-14 用于可编程逻辑的可编程非易失双向开关

Country Status (9)

Country Link
US (1) US5640344A (enExample)
EP (2) EP1345235A1 (enExample)
JP (1) JP3881020B2 (enExample)
KR (1) KR100397062B1 (enExample)
CN (1) CN1146921C (enExample)
AT (1) ATE255766T1 (enExample)
AU (1) AU6268996A (enExample)
DE (1) DE69630958T2 (enExample)
WO (1) WO1997005624A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367208A (en) 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US5838040A (en) * 1997-03-31 1998-11-17 Gatefield Corporation Nonvolatile reprogrammable interconnect cell with FN tunneling in sense
US5912836A (en) * 1997-12-01 1999-06-15 Amic Technology, Inc. Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array
DE29812092U1 (de) * 1998-07-07 1999-11-18 iC-Haus GmbH, 55294 Bodenheim Elektronischer Wechselspannungsschalter
US6201734B1 (en) * 1998-09-25 2001-03-13 Sandisk Corporation Programmable impedance device
KR100734637B1 (ko) * 2000-04-14 2007-07-02 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스, 메모리 셀 및 메모리 셀 구조물과 그 제어 방법
US6531887B2 (en) * 2001-06-01 2003-03-11 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell
US6577161B2 (en) * 2001-06-01 2003-06-10 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell with unidirectional and bidirectional states
US6545504B2 (en) * 2001-06-01 2003-04-08 Macronix International Co., Ltd. Four state programmable interconnect device for bus line and I/O pad
US20050097499A1 (en) * 2003-11-03 2005-05-05 Macronix International Co., Ltd. In-circuit configuration architecture with non-volatile configuration store for embedded configurable logic array
US20050102573A1 (en) * 2003-11-03 2005-05-12 Macronix International Co., Ltd. In-circuit configuration architecture for embedded configurable logic array
US7209392B2 (en) * 2004-07-20 2007-04-24 Ememory Technology Inc. Single poly non-volatile memory
US7430137B2 (en) * 2004-09-09 2008-09-30 Actel Corporation Non-volatile memory cells in a field programmable gate array
US7020020B1 (en) * 2004-09-21 2006-03-28 Atmel Corporation Low voltage non-volatile memory cells using twin bit line current sensing
US7638855B2 (en) * 2005-05-06 2009-12-29 Macronix International Co., Ltd. Anti-fuse one-time-programmable nonvolatile memory
US7368789B1 (en) 2005-06-13 2008-05-06 Actel Corporation Non-volatile programmable memory cell and array for programmable logic array
US7768056B1 (en) * 2005-06-13 2010-08-03 Actel Corporation Isolated-nitride-region non-volatile memory cell and fabrication method
US7538379B1 (en) 2005-06-15 2009-05-26 Actel Corporation Non-volatile two-transistor programmable logic cell and array layout
US7285818B2 (en) * 2005-06-15 2007-10-23 Actel Corporation Non-volatile two-transistor programmable logic cell and array layout
US7245535B2 (en) * 2005-09-21 2007-07-17 Actel Corporation Non-volatile programmable memory cell for programmable logic array
US7301821B1 (en) 2005-10-13 2007-11-27 Actel Corporation Volatile data storage in a non-volatile memory cell array
US9875788B2 (en) * 2010-03-25 2018-01-23 Qualcomm Incorporated Low-power 5T SRAM with improved stability and reduced bitcell size
JP6272713B2 (ja) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
US4573144A (en) * 1982-09-30 1986-02-25 Motorola, Inc. Common floating gate programmable link
US4896296A (en) * 1985-03-04 1990-01-23 Lattice Semiconductor Corporation Programmable logic device configurable input/output cell
US4879688A (en) * 1985-03-04 1989-11-07 Lattice Semiconductor Corporation In-system programmable logic device
US5440518A (en) * 1991-06-12 1995-08-08 Hazani; Emanuel Non-volatile memory circuits, architecture and methods
US5005155A (en) * 1988-06-15 1991-04-02 Advanced Micro Devices, Inc. Optimized electrically erasable PLA cell for minimum read disturb
JPH0447595A (ja) * 1990-06-15 1992-02-17 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5247478A (en) * 1992-03-06 1993-09-21 Altera Corporation Programmable transfer-devices
FR2703501B1 (fr) * 1993-04-01 1995-05-19 Gemplus Card Int Circuit intégré pour carte à mémoire et procédé de décomptage d'unités dans une carte à mémoire.
US5574466A (en) * 1995-03-31 1996-11-12 Motorola, Inc. Method for wireless communication system planning

Also Published As

Publication number Publication date
US5640344A (en) 1997-06-17
CN1196134A (zh) 1998-10-14
JP3881020B2 (ja) 2007-02-14
EP1345235A1 (en) 2003-09-17
JPH11510296A (ja) 1999-09-07
EP0840930B1 (en) 2003-12-03
ATE255766T1 (de) 2003-12-15
KR19990028907A (ko) 1999-04-15
AU6268996A (en) 1997-02-26
EP0840930A1 (en) 1998-05-13
KR100397062B1 (ko) 2003-10-17
DE69630958T2 (de) 2004-10-28
DE69630958D1 (de) 2004-01-15
WO1997005624A1 (en) 1997-02-13

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: ADVANTAGE LOGIC INC.

Free format text: FORMER OWNER: BTR INC.

Effective date: 20030523

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20030523

Address after: American California

Applicant after: Advantage Logic, Inc.

Address before: Nevada

Applicant before: BRT Inc.

C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: ARCTEL CO., LTD.

Free format text: FORMER OWNER: ADVANTAGE LOGIC INC.

Effective date: 20080215

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20080215

Address after: American California

Patentee after: Actel Corp.

Address before: American California

Patentee before: Advantage Logic, Inc.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20040421