ATE255766T1 - Programmierbarer nichtflüchtiger zweiwegschalter für programmierbare logik - Google Patents

Programmierbarer nichtflüchtiger zweiwegschalter für programmierbare logik

Info

Publication number
ATE255766T1
ATE255766T1 AT96921471T AT96921471T ATE255766T1 AT E255766 T1 ATE255766 T1 AT E255766T1 AT 96921471 T AT96921471 T AT 96921471T AT 96921471 T AT96921471 T AT 96921471T AT E255766 T1 ATE255766 T1 AT E255766T1
Authority
AT
Austria
Prior art keywords
programming
switch
transistor
oxide
programmable
Prior art date
Application number
AT96921471T
Other languages
German (de)
English (en)
Inventor
Peter M Pani
Benjamin S Ting
Benny Ma
Original Assignee
Advantage Logic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantage Logic Inc filed Critical Advantage Logic Inc
Application granted granted Critical
Publication of ATE255766T1 publication Critical patent/ATE255766T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electronic Switches (AREA)
AT96921471T 1995-07-25 1996-06-14 Programmierbarer nichtflüchtiger zweiwegschalter für programmierbare logik ATE255766T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/506,828 US5640344A (en) 1995-07-25 1995-07-25 Programmable non-volatile bidirectional switch for programmable logic
PCT/US1996/009889 WO1997005624A1 (en) 1995-07-25 1996-06-14 Programmable non-volatile bidirectional switch for programmable logic

Publications (1)

Publication Number Publication Date
ATE255766T1 true ATE255766T1 (de) 2003-12-15

Family

ID=24016170

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96921471T ATE255766T1 (de) 1995-07-25 1996-06-14 Programmierbarer nichtflüchtiger zweiwegschalter für programmierbare logik

Country Status (9)

Country Link
US (1) US5640344A (enExample)
EP (2) EP1345235A1 (enExample)
JP (1) JP3881020B2 (enExample)
KR (1) KR100397062B1 (enExample)
CN (1) CN1146921C (enExample)
AT (1) ATE255766T1 (enExample)
AU (1) AU6268996A (enExample)
DE (1) DE69630958T2 (enExample)
WO (1) WO1997005624A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367208A (en) 1986-09-19 1994-11-22 Actel Corporation Reconfigurable programmable interconnect architecture
US5838040A (en) * 1997-03-31 1998-11-17 Gatefield Corporation Nonvolatile reprogrammable interconnect cell with FN tunneling in sense
US5912836A (en) * 1997-12-01 1999-06-15 Amic Technology, Inc. Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array
DE29812092U1 (de) * 1998-07-07 1999-11-18 iC-Haus GmbH, 55294 Bodenheim Elektronischer Wechselspannungsschalter
US6201734B1 (en) * 1998-09-25 2001-03-13 Sandisk Corporation Programmable impedance device
KR100734637B1 (ko) * 2000-04-14 2007-07-02 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 디바이스, 메모리 셀 및 메모리 셀 구조물과 그 제어 방법
US6531887B2 (en) * 2001-06-01 2003-03-11 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell
US6577161B2 (en) * 2001-06-01 2003-06-10 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell with unidirectional and bidirectional states
US6545504B2 (en) * 2001-06-01 2003-04-08 Macronix International Co., Ltd. Four state programmable interconnect device for bus line and I/O pad
US20050097499A1 (en) * 2003-11-03 2005-05-05 Macronix International Co., Ltd. In-circuit configuration architecture with non-volatile configuration store for embedded configurable logic array
US20050102573A1 (en) * 2003-11-03 2005-05-12 Macronix International Co., Ltd. In-circuit configuration architecture for embedded configurable logic array
US7209392B2 (en) * 2004-07-20 2007-04-24 Ememory Technology Inc. Single poly non-volatile memory
US7430137B2 (en) * 2004-09-09 2008-09-30 Actel Corporation Non-volatile memory cells in a field programmable gate array
US7020020B1 (en) * 2004-09-21 2006-03-28 Atmel Corporation Low voltage non-volatile memory cells using twin bit line current sensing
US7638855B2 (en) * 2005-05-06 2009-12-29 Macronix International Co., Ltd. Anti-fuse one-time-programmable nonvolatile memory
US7368789B1 (en) 2005-06-13 2008-05-06 Actel Corporation Non-volatile programmable memory cell and array for programmable logic array
US7768056B1 (en) * 2005-06-13 2010-08-03 Actel Corporation Isolated-nitride-region non-volatile memory cell and fabrication method
US7538379B1 (en) 2005-06-15 2009-05-26 Actel Corporation Non-volatile two-transistor programmable logic cell and array layout
US7285818B2 (en) * 2005-06-15 2007-10-23 Actel Corporation Non-volatile two-transistor programmable logic cell and array layout
US7245535B2 (en) * 2005-09-21 2007-07-17 Actel Corporation Non-volatile programmable memory cell for programmable logic array
US7301821B1 (en) 2005-10-13 2007-11-27 Actel Corporation Volatile data storage in a non-volatile memory cell array
US9875788B2 (en) * 2010-03-25 2018-01-23 Qualcomm Incorporated Low-power 5T SRAM with improved stability and reduced bitcell size
JP6272713B2 (ja) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス及び半導体装置
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
US4573144A (en) * 1982-09-30 1986-02-25 Motorola, Inc. Common floating gate programmable link
US4896296A (en) * 1985-03-04 1990-01-23 Lattice Semiconductor Corporation Programmable logic device configurable input/output cell
US4879688A (en) * 1985-03-04 1989-11-07 Lattice Semiconductor Corporation In-system programmable logic device
US5440518A (en) * 1991-06-12 1995-08-08 Hazani; Emanuel Non-volatile memory circuits, architecture and methods
US5005155A (en) * 1988-06-15 1991-04-02 Advanced Micro Devices, Inc. Optimized electrically erasable PLA cell for minimum read disturb
JPH0447595A (ja) * 1990-06-15 1992-02-17 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5247478A (en) * 1992-03-06 1993-09-21 Altera Corporation Programmable transfer-devices
FR2703501B1 (fr) * 1993-04-01 1995-05-19 Gemplus Card Int Circuit intégré pour carte à mémoire et procédé de décomptage d'unités dans une carte à mémoire.
US5574466A (en) * 1995-03-31 1996-11-12 Motorola, Inc. Method for wireless communication system planning

Also Published As

Publication number Publication date
US5640344A (en) 1997-06-17
CN1146921C (zh) 2004-04-21
CN1196134A (zh) 1998-10-14
JP3881020B2 (ja) 2007-02-14
EP1345235A1 (en) 2003-09-17
JPH11510296A (ja) 1999-09-07
EP0840930B1 (en) 2003-12-03
KR19990028907A (ko) 1999-04-15
AU6268996A (en) 1997-02-26
EP0840930A1 (en) 1998-05-13
KR100397062B1 (ko) 2003-10-17
DE69630958T2 (de) 2004-10-28
DE69630958D1 (de) 2004-01-15
WO1997005624A1 (en) 1997-02-13

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Legal Events

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