DE69621576T2 - Integrierte Halbleiterschaltung - Google Patents

Integrierte Halbleiterschaltung

Info

Publication number
DE69621576T2
DE69621576T2 DE69621576T DE69621576T DE69621576T2 DE 69621576 T2 DE69621576 T2 DE 69621576T2 DE 69621576 T DE69621576 T DE 69621576T DE 69621576 T DE69621576 T DE 69621576T DE 69621576 T2 DE69621576 T2 DE 69621576T2
Authority
DE
Germany
Prior art keywords
mos transistor
gate
drain
source
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69621576T
Other languages
German (de)
English (en)
Other versions
DE69621576D1 (de
Inventor
Yoshihiro Iwamoto
Hiroshi Shigehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69621576D1 publication Critical patent/DE69621576D1/de
Application granted granted Critical
Publication of DE69621576T2 publication Critical patent/DE69621576T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69621576T 1995-12-26 1996-11-15 Integrierte Halbleiterschaltung Expired - Fee Related DE69621576T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33886995 1995-12-26

Publications (2)

Publication Number Publication Date
DE69621576D1 DE69621576D1 (de) 2002-07-11
DE69621576T2 true DE69621576T2 (de) 2002-12-19

Family

ID=18322165

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621576T Expired - Fee Related DE69621576T2 (de) 1995-12-26 1996-11-15 Integrierte Halbleiterschaltung

Country Status (5)

Country Link
US (1) US6084431A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0782269B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100300687B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69621576T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW317029B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6144221A (en) * 1998-07-02 2000-11-07 Seiko Epson Corporation Voltage tolerant interface circuit
US6545506B1 (en) * 1999-03-12 2003-04-08 Silable, Inc. CMOS output driver that can tolerant a high input voltage
US6313661B1 (en) * 2000-03-31 2001-11-06 Intel Corporation High voltage tolerant I/O buffer
US6882188B1 (en) * 2003-09-30 2005-04-19 Faraday Technology Corp. Input/output buffer
US7046493B2 (en) * 2003-12-12 2006-05-16 Faraday Technology Corp. Input/output buffer protection circuit
JP4568096B2 (ja) * 2004-11-25 2010-10-27 Ｏｋｉセミコンダクタ株式会社 入出力回路
US7521975B2 (en) * 2005-01-20 2009-04-21 Advanced Micro Devices, Inc. Output buffer with slew rate control utilizing an inverse process dependent current reference
KR20100116253A (ko) * 2009-04-22 2010-11-01 삼성전자주식회사 입출력 회로 및 이를 포함하는 집적회로 장치
US8044684B1 (en) 2010-04-15 2011-10-25 Stmicroelectronics Pvt. Ltd. Input and output buffer including a dynamic driver reference generator

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01161916A (ja) * 1987-12-18 1989-06-26 Toshiba Corp 半導体集積回路
US5151619A (en) * 1990-10-11 1992-09-29 International Business Machines Corporation Cmos off chip driver circuit
US5227673A (en) * 1990-11-13 1993-07-13 Vlsi Technology, Inc. Differential output buffer with feedback
US5144165A (en) * 1990-12-14 1992-09-01 International Business Machines Corporation CMOS off-chip driver circuits
JP2623374B2 (ja) * 1991-02-07 1997-06-25 ローム株式会社 出力回路
US5276364A (en) * 1991-12-13 1994-01-04 Texas Instruments Incorporated BiCMOS bus interface output driver compatible with a mixed voltage system environment
JPH05167427A (ja) * 1991-12-13 1993-07-02 Toshiba Corp レベルシフト回路
US5266849A (en) * 1992-02-19 1993-11-30 Hal Computer Systems, Inc. Tri state buffer circuit for dual power system
US5300828A (en) * 1992-08-31 1994-04-05 Sgs-Thomson Microelectronics, Inc. Slew rate limited output buffer with bypass circuitry
US5387826A (en) * 1993-02-10 1995-02-07 National Semiconductor Corporation Overvoltage protection against charge leakage in an output driver
US5338978A (en) * 1993-02-10 1994-08-16 National Semiconductor Corporation Full swing power down buffer circuit with multiple power supply isolation
US5381061A (en) * 1993-03-02 1995-01-10 National Semiconductor Corporation Overvoltage tolerant output buffer circuit
JP2888722B2 (ja) * 1993-04-12 1999-05-10 株式会社東芝 インターフェース回路
US5406140A (en) * 1993-06-07 1995-04-11 National Semiconductor Corporation Voltage translation and overvoltage protection
US5381062A (en) * 1993-10-28 1995-01-10 At&T Corp. Multi-voltage compatible bidirectional buffer
JP3311133B2 (ja) * 1994-02-16 2002-08-05 株式会社東芝 出力回路
US5467031A (en) * 1994-09-22 1995-11-14 Lsi Logic Corporation 3.3 volt CMOS tri-state driver circuit capable of driving common 5 volt line
US5444397A (en) * 1994-10-05 1995-08-22 Pericom Semiconductor Corp. All-CMOS high-impedance output buffer for a bus driven by multiple power-supply voltages
US5721508A (en) * 1996-01-24 1998-02-24 Cypress Semiconductor Corporation 5 Volt tolerant 3.3 volt output buffer

Also Published As

Publication number Publication date
TW317029B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1997-10-01
EP0782269A2 (en) 1997-07-02
EP0782269A3 (en) 1998-01-07
DE69621576D1 (de) 2002-07-11
KR100300687B1 (ko) 2001-11-30
KR970051174A (ko) 1997-07-29
EP0782269B1 (en) 2002-06-05
US6084431A (en) 2000-07-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee