DE69617762T2 - Verbesserte Lesung einer nichtflüchtigen Halbleiterspeicheranordnung - Google Patents

Verbesserte Lesung einer nichtflüchtigen Halbleiterspeicheranordnung

Info

Publication number
DE69617762T2
DE69617762T2 DE69617762T DE69617762T DE69617762T2 DE 69617762 T2 DE69617762 T2 DE 69617762T2 DE 69617762 T DE69617762 T DE 69617762T DE 69617762 T DE69617762 T DE 69617762T DE 69617762 T2 DE69617762 T2 DE 69617762T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
improved reading
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69617762T
Other languages
English (en)
Other versions
DE69617762D1 (de
Inventor
Yutaka Hayashi
Machio Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69617762D1 publication Critical patent/DE69617762D1/de
Application granted granted Critical
Publication of DE69617762T2 publication Critical patent/DE69617762T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5631—Concurrent multilevel reading of more than one cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69617762T 1995-02-01 1996-01-31 Verbesserte Lesung einer nichtflüchtigen Halbleiterspeicheranordnung Expired - Lifetime DE69617762T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1542495 1995-02-01
JP10667995A JP3336813B2 (ja) 1995-02-01 1995-04-28 不揮発性半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69617762D1 DE69617762D1 (de) 2002-01-24
DE69617762T2 true DE69617762T2 (de) 2002-08-08

Family

ID=26351570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69617762T Expired - Lifetime DE69617762T2 (de) 1995-02-01 1996-01-31 Verbesserte Lesung einer nichtflüchtigen Halbleiterspeicheranordnung

Country Status (5)

Country Link
US (1) US5768184A (de)
EP (1) EP0725403B1 (de)
JP (1) JP3336813B2 (de)
KR (1) KR100379861B1 (de)
DE (1) DE69617762T2 (de)

Families Citing this family (37)

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US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US6002614A (en) 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US7071060B1 (en) 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
WO1998006101A1 (de) * 1996-08-01 1998-02-12 Siemens Aktiengesellschaft Verfahren zum betrieb einer speicherzellenanordnung
KR100486444B1 (ko) * 1996-08-30 2005-06-16 산요덴키가부시키가이샤 반도체기억장치
US6857099B1 (en) * 1996-09-18 2005-02-15 Nippon Steel Corporation Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
US5790453A (en) * 1996-10-24 1998-08-04 Micron Quantum Devices, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
US6078518A (en) 1998-02-25 2000-06-20 Micron Technology, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
US5771346A (en) 1996-10-24 1998-06-23 Micron Quantum Devices, Inc. Apparatus and method for detecting over-programming condition in multistate memory device
US5764568A (en) * 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
US5768287A (en) 1996-10-24 1998-06-16 Micron Quantum Devices, Inc. Apparatus and method for programming multistate memory device
JPH10283793A (ja) * 1997-02-06 1998-10-23 Sunao Shibata 半導体回路
JPH10326494A (ja) * 1997-03-24 1998-12-08 Seiko Epson Corp 半導体記憶装置
DE69723814D1 (de) * 1997-05-09 2003-09-04 St Microelectronics Srl Verfahren und Vorrichtung zum Analogprogrammieren von nichtflüchtigen Speicherzellen, insbesondere für Flash-Speicherzellen
GB2325546B (en) * 1997-05-21 2001-10-17 Motorola Inc Electrically programmable memory and method of programming
AU5600998A (en) * 1997-11-21 1999-06-15 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
TW420806B (en) * 1998-03-06 2001-02-01 Sanyo Electric Co Non-volatile semiconductor memory device
US6038166A (en) * 1998-04-01 2000-03-14 Invox Technology High resolution multi-bit-per-cell memory
US6567302B2 (en) 1998-12-29 2003-05-20 Micron Technology, Inc. Method and apparatus for programming multi-state cells in a memory device
JP3584181B2 (ja) * 1999-05-27 2004-11-04 シャープ株式会社 不揮発性半導体記憶装置
KR100673700B1 (ko) * 2000-04-21 2007-01-23 주식회사 하이닉스반도체 멀티 레벨 플래시 메모리의 프로그래밍 회로
JP3709132B2 (ja) * 2000-09-20 2005-10-19 シャープ株式会社 不揮発性半導体記憶装置
US6584017B2 (en) * 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
TW559814B (en) * 2001-05-31 2003-11-01 Semiconductor Energy Lab Nonvolatile memory and method of driving the same
US6690602B1 (en) 2002-04-08 2004-02-10 Advanced Micro Devices, Inc. Algorithm dynamic reference programming
JP2004022093A (ja) * 2002-06-18 2004-01-22 Toshiba Corp 半導体記憶装置
US20040017693A1 (en) * 2002-07-23 2004-01-29 Tung-Cheng Kuo Method for programming, reading, and erasing a non-volatile memory with multi-level output currents
JP4102790B2 (ja) * 2004-08-30 2008-06-18 シャープ株式会社 半導体記憶装置及び電子機器
ITMI20042538A1 (it) * 2004-12-29 2005-03-29 Atmel Corp Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli
JP5001578B2 (ja) * 2005-06-30 2012-08-15 ラピスセミコンダクタ株式会社 半導体記憶装置及び半導体記憶装置の製造方法
US7701779B2 (en) * 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7948802B2 (en) 2007-12-04 2011-05-24 Micron Technology, Inc. Sensing memory cells
JP5598340B2 (ja) * 2011-01-14 2014-10-01 セイコーエプソン株式会社 リファレンス電流発生回路、不揮発性記憶装置、集積回路装置、及び電子機器
US20220344357A1 (en) * 2021-04-23 2022-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, integrated circuit, and manufacturing method of memory device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1214246B (it) * 1987-05-27 1990-01-10 Sgs Microelettronica Spa Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5418743A (en) * 1992-12-07 1995-05-23 Nippon Steel Corporation Method of writing into non-volatile semiconductor memory
US5828601A (en) * 1993-12-01 1998-10-27 Advanced Micro Devices, Inc. Programmed reference
JP3397427B2 (ja) * 1994-02-02 2003-04-14 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
EP0725403A1 (de) 1996-08-07
JP3336813B2 (ja) 2002-10-21
US5768184A (en) 1998-06-16
JPH08274282A (ja) 1996-10-18
KR960032733A (ko) 1996-09-17
DE69617762D1 (de) 2002-01-24
KR100379861B1 (ko) 2003-07-23
EP0725403B1 (de) 2001-12-12

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