DE69615483T2 - Leseverstärkerschaltung einer nichtflüchtigen Halbleiterspeicheranordnung - Google Patents

Leseverstärkerschaltung einer nichtflüchtigen Halbleiterspeicheranordnung

Info

Publication number
DE69615483T2
DE69615483T2 DE69615483T DE69615483T DE69615483T2 DE 69615483 T2 DE69615483 T2 DE 69615483T2 DE 69615483 T DE69615483 T DE 69615483T DE 69615483 T DE69615483 T DE 69615483T DE 69615483 T2 DE69615483 T2 DE 69615483T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
amplifier circuit
sense amplifier
volatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69615483T
Other languages
English (en)
Other versions
DE69615483D1 (de
Inventor
Myung-Jae Kim
Tae-Sung Jung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019950018965A external-priority patent/KR0177770B1/ko
Priority claimed from KR1019950018968A external-priority patent/KR0158114B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69615483D1 publication Critical patent/DE69615483D1/de
Publication of DE69615483T2 publication Critical patent/DE69615483T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
DE69615483T 1995-06-13 1996-06-13 Leseverstärkerschaltung einer nichtflüchtigen Halbleiterspeicheranordnung Expired - Lifetime DE69615483T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR19950015577 1995-06-13
KR1019950018965A KR0177770B1 (ko) 1995-06-30 1995-06-30 불 휘발성 반도체 메모리 장치
KR1019950018968A KR0158114B1 (ko) 1995-06-30 1995-06-30 불 휘발성 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
DE69615483D1 DE69615483D1 (de) 2001-10-31
DE69615483T2 true DE69615483T2 (de) 2002-05-29

Family

ID=27349186

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615483T Expired - Lifetime DE69615483T2 (de) 1995-06-13 1996-06-13 Leseverstärkerschaltung einer nichtflüchtigen Halbleiterspeicheranordnung

Country Status (5)

Country Link
US (1) US5761123A (de)
EP (1) EP0758127B1 (de)
JP (1) JP3661162B2 (de)
CN (1) CN1107323C (de)
DE (1) DE69615483T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007019545B4 (de) * 2006-04-25 2013-01-31 Qimonda Ag Dateninversionsverfahren

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KR100248868B1 (ko) * 1996-12-14 2000-03-15 윤종용 플래시 불휘발성 반도체 메모리 장치 및 그 장치의 동작 모드 제어 방법
KR100268430B1 (ko) * 1997-05-24 2000-11-01 윤종용 반도체메모리장치
US5995431A (en) * 1997-06-11 1999-11-30 Texas Instruments Incorporated Bit line precharge circuit with reduced standby current
FR2765026B1 (fr) * 1997-06-19 1999-08-13 Sgs Thomson Microelectronics Procede et circuit de lecture pour memoire dynamique
US6016279A (en) * 1998-03-30 2000-01-18 Vanguard International Semiconductor Corporation DRAM sensing scheme and isolation circuit
US5870343A (en) * 1998-04-06 1999-02-09 Vanguard International Semiconductor Corporation DRAM sensing scheme for eliminating bit-line coupling noise
US6130847A (en) * 1999-07-21 2000-10-10 United Microelectronics Corp. Semiconductor device with fast write recovery circuit
KR100326944B1 (ko) * 2000-01-10 2002-03-13 윤종용 향상된 입/출력 라인 구조를 갖는 반도체 메모리 장치
US6480419B2 (en) * 2001-02-22 2002-11-12 Samsung Electronics Co., Ltd. Bit line setup and discharge circuit for programming non-volatile memory
KR100541366B1 (ko) * 2002-07-19 2006-01-16 주식회사 하이닉스반도체 고속 데이터 억세스를 위한 디램
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US6829167B2 (en) * 2002-12-12 2004-12-07 Sandisk Corporation Error recovery for nonvolatile memory
CN100407335C (zh) * 2003-05-09 2008-07-30 联发科技股份有限公司 差动式只读存储器的预充电及检测电路
KR100546373B1 (ko) * 2003-08-28 2006-01-26 삼성전자주식회사 기준셀을 사용하지 않는 ｖｓｓ／ｖｄｄ 비트라인프리차지 스킴을 갖는 반도체 메모리장치
KR100702004B1 (ko) * 2004-08-02 2007-03-30 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 비트 라인 센싱 방법
KR100571650B1 (ko) * 2005-03-31 2006-04-17 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
JP4781783B2 (ja) * 2005-10-31 2011-09-28 エルピーダメモリ株式会社 半導体記憶装置
JP2007220218A (ja) 2006-02-17 2007-08-30 Fujitsu Ltd 半導体記憶装置およびその制御方法
JP2007257786A (ja) * 2006-03-24 2007-10-04 Toshiba Corp 半導体記憶装置
US7742351B2 (en) * 2006-06-30 2010-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
CN101425339B (zh) * 2008-12-05 2010-12-29 上海贝岭股份有限公司 一种大容量eeprom存储器读放电路
US8208330B2 (en) * 2009-07-24 2012-06-26 Macronix International Co., Ltd. Sense amplifier with shielding circuit
US8750049B2 (en) * 2010-06-02 2014-06-10 Stmicroelectronics International N.V. Word line driver for memory
US8817562B2 (en) * 2012-07-31 2014-08-26 Freescale Semiconductor, Inc. Devices and methods for controlling memory cell pre-charge operations
KR20180116879A (ko) * 2017-04-18 2018-10-26 에스케이하이닉스 주식회사 반도체 장치
WO2021081973A1 (en) 2019-11-01 2021-05-06 Yangtze Memory Technologies Co., Ltd. Sense amplifier for flash memory devices
KR20210067677A (ko) * 2019-11-29 2021-06-08 에스케이하이닉스 주식회사 메모리 장치 및 그 동작 방법
US11574657B2 (en) * 2020-09-28 2023-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device, sense amplifier and method for mismatch compensation

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Publication number Priority date Publication date Assignee Title
JPH04114395A (ja) * 1990-09-05 1992-04-15 Nec Corp 半導体記憶回路
JP3279615B2 (ja) * 1991-04-15 2002-04-30 株式会社日立製作所 半導体装置
KR940004406B1 (ko) * 1991-09-27 1994-05-25 현대전자산업 주식회사 Nand형 셀의 감지증폭기
JPH05159575A (ja) * 1991-12-04 1993-06-25 Oki Electric Ind Co Ltd ダイナミックランダムアクセスメモリ
JPH06290591A (ja) * 1993-03-31 1994-10-18 Sony Corp 半導体不揮発性記憶装置
KR970001344B1 (ko) * 1993-07-12 1997-02-05 삼성전자 주식회사 반도체 메모리 장치
KR960011207B1 (ko) * 1993-11-17 1996-08-21 김광호 반도체 메모리 장치의 데이타 센싱방법 및 그 회로
US5539701A (en) * 1994-08-05 1996-07-23 Nippon Steel Corporation Sense circuit for semiconductor memory devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007019545B4 (de) * 2006-04-25 2013-01-31 Qimonda Ag Dateninversionsverfahren

Also Published As

Publication number Publication date
EP0758127B1 (de) 2001-09-26
EP0758127A2 (de) 1997-02-12
EP0758127A3 (de) 1997-07-23
CN1151593A (zh) 1997-06-11
CN1107323C (zh) 2003-04-30
US5761123A (en) 1998-06-02
JPH097382A (ja) 1997-01-10
JP3661162B2 (ja) 2005-06-15
DE69615483D1 (de) 2001-10-31

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Legal Events

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8364 No opposition during term of opposition