DE69611597T2 - Verfahren zur Herstellung geschmolzener Siliziumschmelze aus polykristallinem Silizium-Chargiergut - Google Patents
Verfahren zur Herstellung geschmolzener Siliziumschmelze aus polykristallinem Silizium-ChargiergutInfo
- Publication number
- DE69611597T2 DE69611597T2 DE69611597T DE69611597T DE69611597T2 DE 69611597 T2 DE69611597 T2 DE 69611597T2 DE 69611597 T DE69611597 T DE 69611597T DE 69611597 T DE69611597 T DE 69611597T DE 69611597 T2 DE69611597 T2 DE 69611597T2
- Authority
- DE
- Germany
- Prior art keywords
- polycrystalline silicon
- crucible
- granular
- lumpy
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 181
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 32
- 229910052710 silicon Inorganic materials 0.000 title claims description 32
- 239000010703 silicon Substances 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- 238000010926 purge Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 claims 15
- 239000013078 crystal Substances 0.000 description 14
- 238000011068 loading method Methods 0.000 description 12
- 239000000155 melt Substances 0.000 description 11
- 238000005245 sintering Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 238000012856 packing Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/595,075 US5814148A (en) | 1996-02-01 | 1996-02-01 | Method for preparing molten silicon melt from polycrystalline silicon charge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69611597D1 DE69611597D1 (de) | 2001-02-22 |
| DE69611597T2 true DE69611597T2 (de) | 2001-05-31 |
Family
ID=24381626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69611597T Expired - Fee Related DE69611597T2 (de) | 1996-02-01 | 1996-11-12 | Verfahren zur Herstellung geschmolzener Siliziumschmelze aus polykristallinem Silizium-Chargiergut |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5814148A (enExample) |
| EP (1) | EP0787836B1 (enExample) |
| JP (1) | JPH09328391A (enExample) |
| KR (1) | KR970062081A (enExample) |
| CN (1) | CN1157342A (enExample) |
| DE (1) | DE69611597T2 (enExample) |
| MY (1) | MY112066A (enExample) |
| SG (1) | SG76498A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0856599A3 (en) * | 1997-01-31 | 2000-03-22 | Komatsu Electronic Metals Co., Ltd | Apparatus for feeding raw material into a quartz crucible and method of feeding the same |
| JP3189764B2 (ja) * | 1997-09-29 | 2001-07-16 | 住友金属工業株式会社 | シリコン単結晶原料の溶解方法 |
| US5919303A (en) * | 1997-10-16 | 1999-07-06 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
| US6589332B1 (en) | 1998-11-03 | 2003-07-08 | Memc Electronic Materials, Inc. | Method and system for measuring polycrystalline chunk size and distribution in the charge of a Czochralski process |
| US6284040B1 (en) | 1999-01-13 | 2001-09-04 | Memc Electronic Materials, Inc. | Process of stacking and melting polycrystalline silicon for high quality single crystal production |
| US6344083B1 (en) | 2000-02-14 | 2002-02-05 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
| US6749683B2 (en) | 2000-02-14 | 2004-06-15 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
| US8021483B2 (en) * | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
| US7141114B2 (en) * | 2004-06-30 | 2006-11-28 | Rec Silicon Inc | Process for producing a crystalline silicon ingot |
| NO324710B1 (no) * | 2004-12-29 | 2007-12-03 | Elkem Solar As | Fremgangsmate for fylling av digel med silisium av solcellekvalitet |
| JP4961753B2 (ja) * | 2006-01-20 | 2012-06-27 | 株式会社Ｓｕｍｃｏ | 単結晶製造管理システム及び方法 |
| JP4753308B2 (ja) * | 2006-07-13 | 2011-08-24 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体ウェーハ素材の溶解方法及び半導体ウェーハの結晶育成方法 |
| CN101148777B (zh) * | 2007-07-19 | 2011-03-23 | 任丙彦 | 直拉法生长掺镓硅单晶的方法和装置 |
| US20090120353A1 (en) * | 2007-11-13 | 2009-05-14 | Memc Electronic Materials, Inc. | Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt |
| US20100107966A1 (en) * | 2008-11-05 | 2010-05-06 | Memc Electronic Materials, Inc. | Methods for preparing a melt of silicon powder for silicon crystal growth |
| JP5511945B2 (ja) * | 2009-04-29 | 2014-06-04 | シリコー マテリアルズ インコーポレイテッド | Ｕｍｇ−ｓｉ材料精製のためのプロセス管理 |
| JP2012140285A (ja) * | 2010-12-28 | 2012-07-26 | Siltronic Japan Corp | シリコン単結晶インゴットの製造方法 |
| US20120260845A1 (en) * | 2011-04-14 | 2012-10-18 | Rec Silicon Inc | Polysilicon system |
| CN102953117B (zh) * | 2011-08-31 | 2015-06-10 | 上海普罗新能源有限公司 | 硅锭的铸造方法 |
| CN102732945B (zh) * | 2012-04-13 | 2015-11-25 | 英利能源（中国）有限公司 | 一种单晶硅铸锭装料方法 |
| WO2014037965A1 (en) * | 2012-09-05 | 2014-03-13 | MEMC ELECTRONIC METERIALS S.p.A. | Method of loading a charge of polysilicon into a crucible |
| CN103074681B (zh) * | 2013-02-17 | 2016-03-16 | 英利集团有限公司 | 一种二次加料方法 |
| CN107604446A (zh) * | 2017-10-25 | 2018-01-19 | 宁晋晶兴电子材料有限公司 | 一种新型的熔融表皮料结构及其熔融方法 |
| DE102019208670A1 (de) * | 2019-06-14 | 2020-12-17 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben aus Silizium |
| CN114086243A (zh) * | 2021-11-29 | 2022-02-25 | 曲靖晶龙电子材料有限公司 | 单晶硅棒的制备方法 |
| CN115467013A (zh) * | 2022-08-22 | 2022-12-13 | 包头美科硅能源有限公司 | 一种用于拉晶生产中提高颗粒硅投料量的方法 |
| CN115404356B (zh) * | 2022-09-22 | 2024-03-22 | 同创普润(上海)机电高科技有限公司 | 一种降低高纯铝熔体中不熔物含量的方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4249988A (en) * | 1978-03-15 | 1981-02-10 | Western Electric Company, Inc. | Growing crystals from a melt by controlling additions of material thereto |
| WO1986006764A1 (en) * | 1985-05-17 | 1986-11-20 | J.C. Schumacher Company | Continuously pulled single crystal silicon ingots |
| JPS6287489A (ja) * | 1985-10-12 | 1987-04-21 | Sumitomo Electric Ind Ltd | るつぼの回収方法及び装置 |
| JPH01148779A (ja) * | 1987-12-03 | 1989-06-12 | Toshiba Ceramics Co Ltd | 結晶成分の供給方法 |
| JPH01286995A (ja) * | 1988-05-12 | 1989-11-17 | Toshiba Ceramics Co Ltd | シリコン単結晶の製造方法 |
| JPH03193694A (ja) * | 1989-12-21 | 1991-08-23 | Sumitomo Metal Ind Ltd | 結晶成長装置 |
| JPH03199189A (ja) * | 1989-12-27 | 1991-08-30 | Kawasaki Steel Corp | 半導体単結晶の製造方法 |
| DE4106589C2 (de) | 1991-03-01 | 1997-04-24 | Wacker Siltronic Halbleitermat | Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski |
| US5242667A (en) | 1991-07-26 | 1993-09-07 | Ferrofluidics Corporation | Solid pellet feeder for controlled melt replenishment in continuous crystal growing process |
| JPH05139886A (ja) * | 1991-11-21 | 1993-06-08 | Toshiba Corp | 砒素化合物単結晶の製造方法 |
| JP2506525B2 (ja) * | 1992-01-30 | 1996-06-12 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
| JP2531415B2 (ja) * | 1992-03-24 | 1996-09-04 | 住友金属工業株式会社 | 結晶成長方法 |
| JPH05319978A (ja) * | 1992-05-22 | 1993-12-03 | Sumitomo Metal Ind Ltd | 溶融層法による単結晶引き上げ方法 |
| US5588993A (en) * | 1995-07-25 | 1996-12-31 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
-
1996
- 1996-02-01 US US08/595,075 patent/US5814148A/en not_active Expired - Lifetime
- 1996-10-30 MY MYPI96004510A patent/MY112066A/en unknown
- 1996-11-12 EP EP96308146A patent/EP0787836B1/en not_active Expired - Lifetime
- 1996-11-12 DE DE69611597T patent/DE69611597T2/de not_active Expired - Fee Related
- 1996-11-29 KR KR1019960059989A patent/KR970062081A/ko not_active Ceased
- 1996-12-25 CN CN96117958A patent/CN1157342A/zh active Pending
-
1997
- 1997-01-31 JP JP9018503A patent/JPH09328391A/ja active Pending
- 1997-02-01 SG SG1997000229A patent/SG76498A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09328391A (ja) | 1997-12-22 |
| MY112066A (en) | 2001-03-31 |
| EP0787836A3 (en) | 1998-04-01 |
| KR970062081A (ko) | 1997-09-12 |
| US5814148A (en) | 1998-09-29 |
| DE69611597D1 (de) | 2001-02-22 |
| SG76498A1 (en) | 2000-11-21 |
| EP0787836A2 (en) | 1997-08-06 |
| CN1157342A (zh) | 1997-08-20 |
| EP0787836B1 (en) | 2001-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69611597T2 (de) | Verfahren zur Herstellung geschmolzener Siliziumschmelze aus polykristallinem Silizium-Chargiergut | |
| DE69609782T2 (de) | Verfahren zur Herstellung einer Siliziumschmelze von einem polykristallinen Siliziumchargiergut | |
| DE69824877T2 (de) | Verfahren zur herstellung einer siliziumschmelze von einem polykristallinen siliziumchargiergut | |
| DE2821481C2 (de) | Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze | |
| DE69804411T2 (de) | Vefahren zur Herstellung eines Calciumfluoridkristalles und zur Behandelung eines Calciumfluoridpulvers | |
| DE19806045B4 (de) | Verfahren zum Herstellen von einkristallinen Siliziumstäben unter Steuern desZiehgeschwindigkeitsverlaufs in einem Heißzonenofen | |
| DE102010008162B4 (de) | Verfahren für die Herstellung von Quarzglas für einen Quarzglastiegel | |
| DE3013319A1 (de) | Verfahren zur herstellung von fuer solarzellen geeignetem silicium | |
| DE112013001054B4 (de) | Verfahren zum Herstellen eines Silizium-Einkristall-Wafers | |
| DE60220939T2 (de) | Verfahren zur schrittweisen zuführung von silizium um die abschmelzrate von polykristallinem silizium zu erhöhen | |
| EP3387166B1 (de) | Halbleiterscheibe aus einkristallinem silizium und verfahren zu deren herstellung | |
| DE69915509T2 (de) | Herstellung eines fliessfähigen urandioxids durch atomisationstrocknen und mittels trockenumsetzung von uf6 | |
| DE102012023120A1 (de) | Verfahren zur Herstellung eines kristallinen Siliciumblocks | |
| Trempa et al. | Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots | |
| EP1199387B1 (en) | Method for growing single crystal of semiconductor | |
| DE112017003016T5 (de) | Verfahren zur Herstellung von Silicium-Einkristall | |
| DE60128544T2 (de) | Verfahren zur herstellung einer siliziumschmelze | |
| DE10143231A1 (de) | Einkristalliner Siliziumwafer, Rohling und Herstellungsverfahren derselben | |
| DE3716002C2 (de) | Verfahren zur Herstellung eines Siliciumcarbid-Sinterkörpers | |
| DE10006589A1 (de) | Czochralski-Zugvorrichtungen und Zugverfahren zum Herstellen von monokristallinen Siliziumblöcken | |
| DE112012001167T5 (de) | Silikaglastiegel, Verfahren zum Herstellen desselben und Verfahren zum Herstellen eines Silizium-Einkristalls | |
| DE112012000265T5 (de) | Einkristallherstellungsvorrichtung und Verfahren zum Herstellen eines Einkristalls | |
| DE68912686T2 (de) | Verfahren zur Herstellung eines Einkristalls aus einer Halbleiter-Verbindung. | |
| DE102018206982B4 (de) | Tiegel zur Herstellung von multikristallinem Silicium mittels gerichteter Erstarrung, Verfahren zu dessen Herstellung und dessen Verwendung | |
| DE102015215858B4 (de) | Verfahren zur Wärmebehandlung von Granulat aus Silizium, Granulat aus Silizium und Verfahren zur Herstellung eines Einkristalls aus Silizium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |