DE69611540D1 - Erzeugung von kontakten für halbleiterstrahlungsdetektoren und bildaufnahmevorrichtungen - Google Patents

Erzeugung von kontakten für halbleiterstrahlungsdetektoren und bildaufnahmevorrichtungen

Info

Publication number
DE69611540D1
DE69611540D1 DE69611540T DE69611540T DE69611540D1 DE 69611540 D1 DE69611540 D1 DE 69611540D1 DE 69611540 T DE69611540 T DE 69611540T DE 69611540 T DE69611540 T DE 69611540T DE 69611540 D1 DE69611540 D1 DE 69611540D1
Authority
DE
Germany
Prior art keywords
substrate
layer
contact
forming
imaging devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69611540T
Other languages
English (en)
Other versions
DE69611540T2 (de
Inventor
Risto Olavi Orava
Jouni Ilari Pyyhtia
Gunnar Schulman
Miltiadis Evangelos Sarakinos
Konstantinos Evange Spartiotis
Yrjaenae Jalas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPL Intellectual Property Licensing Ltd
Original Assignee
SIMAGE ESPOO Oy
Simage Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SIMAGE ESPOO Oy, Simage Oy filed Critical SIMAGE ESPOO Oy
Application granted granted Critical
Publication of DE69611540D1 publication Critical patent/DE69611540D1/de
Publication of DE69611540T2 publication Critical patent/DE69611540T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69611540T 1995-11-29 1996-11-26 Erzeugung von kontakten für halbleiterstrahlungsdetektoren und bildaufnahmevorrichtungen Expired - Lifetime DE69611540T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9524387A GB2307785B (en) 1995-11-29 1995-11-29 Forming contacts on semiconductor substrates for radiation detectors and imaging devices
PCT/EP1996/005348 WO1997020342A1 (en) 1995-11-29 1996-11-26 Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Publications (2)

Publication Number Publication Date
DE69611540D1 true DE69611540D1 (de) 2001-02-15
DE69611540T2 DE69611540T2 (de) 2001-04-26

Family

ID=10784628

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69611540T Expired - Lifetime DE69611540T2 (de) 1995-11-29 1996-11-26 Erzeugung von kontakten für halbleiterstrahlungsdetektoren und bildaufnahmevorrichtungen

Country Status (17)

Country Link
US (2) US6046068A (de)
EP (2) EP1001469A3 (de)
JP (2) JP3540325B2 (de)
CN (1) CN1113392C (de)
AT (1) ATE198679T1 (de)
AU (1) AU713954B2 (de)
CA (1) CA2238827C (de)
DE (1) DE69611540T2 (de)
DK (1) DK0864171T3 (de)
ES (1) ES2154850T3 (de)
GB (1) GB2307785B (de)
GR (1) GR3035628T3 (de)
HK (2) HK1004243A1 (de)
IL (2) IL124656A0 (de)
NO (1) NO982444L (de)
PT (1) PT864171E (de)
WO (1) WO1997020342A1 (de)

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GB2289983B (en) 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
US6410922B1 (en) 1995-11-29 2002-06-25 Konstantinos Evangelos Spartiotis Forming contacts on semiconductor substrates for radiation detectors and imaging devices
GB2352084B (en) * 1999-07-13 2002-11-13 Simage Oy Forming contacts on semiconductor substrates for radiation detectors and imaging devices
US20020158207A1 (en) * 1996-11-26 2002-10-31 Simage, Oy. Forming contacts on semiconductor substrates for radiation detectors and imaging devices
GB2325081B (en) * 1997-05-06 2000-01-26 Simage Oy Semiconductor imaging device
US7001849B2 (en) * 1998-07-16 2006-02-21 Sandia National Laboratories Surface treatment and protection method for cadmium zinc telluride crystals
US9029793B2 (en) 1998-11-05 2015-05-12 Siemens Aktiengesellschaft Imaging device
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JP2002246582A (ja) * 2000-10-26 2002-08-30 Canon Inc 放射線検出装置、その製造方法及びシステム
IL143853A0 (en) * 2001-06-19 2002-04-21 Real Time Radiography Ltd Laminated radiation detector and process for its fabrication
US6781132B2 (en) * 2001-08-10 2004-08-24 The Regents Of The University Of Michigan Collimated radiation detector assembly, array of collimated radiation detectors and collimated radiation detector module
US7170062B2 (en) 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
GB0224689D0 (en) * 2002-10-23 2002-12-04 Simage Oy Formation of contacts on semiconductor substrates
JP2006504258A (ja) 2002-10-25 2006-02-02 ゴールドパワー リミテッド 回路基板およびその製造方法
US7223981B1 (en) * 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
US7763820B1 (en) 2003-01-27 2010-07-27 Spectramet, Llc Sorting pieces of material based on photonic emissions resulting from multiple sources of stimuli
US20060033029A1 (en) * 2004-08-13 2006-02-16 V-Target Technologies Ltd. Low-voltage, solid-state, ionizing-radiation detector
CN1328598C (zh) * 2005-01-26 2007-07-25 上海大学 共面栅阳极碲锌镉探测器的制备方法
JP2008546177A (ja) * 2005-05-16 2008-12-18 Ｉｉ−Ｖｉ インコーポレイテッド 高性能のＣｄｘＺｎ１−ｘＴｅ（０≦ｘ≦１）のＸ線及びγ線の放射線検出器およびその製造方法
CA2541256A1 (en) * 2006-02-22 2007-08-22 Redlen Technologies Inc. Shielding electrode for monolithic radiation detector
GB0615452D0 (en) * 2006-08-03 2006-09-13 Radiation Watch Ltd Sensors
DE102006046314A1 (de) * 2006-09-29 2008-04-03 Siemens Ag Strahlungsdirektkonvertermodul und Strahlungsdirektkonverter
US7589324B2 (en) * 2006-12-21 2009-09-15 Redlen Technologies Use of solder mask as a protective coating for radiation detector
US7462833B2 (en) * 2007-04-17 2008-12-09 Redlen Technologies Multi-functional cathode packaging design for solid-state radiation detectors
US8847386B2 (en) 2007-06-29 2014-09-30 Koninklijke Philips N.V. Electrical contact for a cadmium tellurium component
US7955992B2 (en) * 2008-08-08 2011-06-07 Redlen Technologies, Inc. Method of passivating and encapsulating CdTe and CZT segmented detectors
US8614423B2 (en) * 2009-02-02 2013-12-24 Redlen Technologies, Inc. Solid-state radiation detector with improved sensitivity
US9202961B2 (en) 2009-02-02 2015-12-01 Redlen Technologies Imaging devices with solid-state radiation detector with improved sensitivity
JP2010210590A (ja) * 2009-03-12 2010-09-24 Fujifilm Corp 放射線検出器
KR101690059B1 (ko) 2009-05-14 2016-12-27 데비코어 메디컬 프로덕츠, 인코포레이티드 광자 방출 검출용 스택 크리스탈 어레이
US8476101B2 (en) * 2009-12-28 2013-07-02 Redlen Technologies Method of fabricating patterned CZT and CdTe devices
US9000389B2 (en) * 2011-11-22 2015-04-07 General Electric Company Radiation detectors and methods of fabricating radiation detectors
CN106415788B (zh) 2014-04-07 2020-10-16 菲力尔系统公司 用于联接半导体基板的方法和系统
DE102014211602B4 (de) * 2014-06-17 2018-10-25 Siemens Healthcare Gmbh Detektormodul für einen Röntgendetektor
WO2016132242A1 (en) 2015-02-17 2016-08-25 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof
KR101835089B1 (ko) 2015-11-16 2018-03-08 주식회사 디알텍 방사선 검출장치와 이를 포함하는 방사선 촬영장치
US11378701B2 (en) 2019-10-08 2022-07-05 Redlen Technologies, Inc. Low dark current radiation detector and method of making the same
US11733408B2 (en) 2020-04-28 2023-08-22 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof

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Also Published As

Publication number Publication date
EP0864171A1 (de) 1998-09-16
EP0864171B1 (de) 2001-01-10
GB2307785A (en) 1997-06-04
CA2238827A1 (en) 1997-06-05
ES2154850T3 (es) 2001-04-16
HK1010282A1 (en) 1999-06-17
US6046068A (en) 2000-04-04
EP1001469A3 (de) 2000-09-06
US6215123B1 (en) 2001-04-10
AU1096797A (en) 1997-06-19
JP2003229555A (ja) 2003-08-15
GB9524387D0 (en) 1996-01-31
CN1203695A (zh) 1998-12-30
PT864171E (pt) 2001-05-31
GR3035628T3 (en) 2001-06-29
NO982444L (no) 1998-07-29
CA2238827C (en) 2002-10-29
IL124656A0 (en) 1998-12-06
NO982444D0 (no) 1998-05-28
IL124656A (en) 2001-10-31
ATE198679T1 (de) 2001-01-15
DE69611540T2 (de) 2001-04-26
JP3540325B2 (ja) 2004-07-07
CN1113392C (zh) 2003-07-02
JP2000516392A (ja) 2000-12-05
DK0864171T3 (da) 2001-01-29
EP1001469A2 (de) 2000-05-17
GB2307785B (en) 1998-04-29
WO1997020342A1 (en) 1997-06-05
AU713954B2 (en) 1999-12-16
HK1004243A1 (en) 1998-11-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GOLDPOWER LTD., TORTOLA, VG

8327 Change in the person/name/address of the patent owner

Owner name: IPL INTELLECTUAL PROPERTY LICENSING LTD., LIMA, CY