JP2008546177A - 高性能のCdxZn1−xTe(0≦x≦1)のX線及びγ線の放射線検出器およびその製造方法 - Google Patents
高性能のCdxZn1−xTe(0≦x≦1)のX線及びγ線の放射線検出器およびその製造方法 Download PDFInfo
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Abstract
Description
・紫外線及びオゾンの表面エッチング及び酸化の組み合わせ;
・原子状水素の表面エッチング;
・絶縁窒化物(AlN、Si3N4もしくは同様のもの)又は酸化物(Al2O3、SiO2、TeO2、CdO、CdTeO3、ZnOもしくは同様のもの)、オキシナイトライド(AlONもしくは同様のもの)及びセレニド(ZnSeもしくは同様のもの)のフィルムのパルスDC反応性スパッタリング;
・Pt、Au、In、Ti、Ni、Fe、Ta、Pd、Al、Ag、Cr、Mo、W、Zn、Te又はそれらの2種、3種もしくは4種のいずれの組み合わせの単層又は複層の金属電極のスパッタリング又は蒸着;
・分割電極形成のためのフォトリソグラフィー
2 基板
4 連続電極
6 側面電極
8 分割電極
12 基板
14 電極パッド
16 結合バンプ
20 酸化Teフィルム
22 酸化物フィルム
24 電気的絶縁フィルム
26 保護フィルム
28 基板の側面
30 基板の上面
32 基板の下面
34 孔
35 薄い酸化物層
36 コンダクタ
40 側面電極
Claims (17)
- II-VI化合物で形成された結晶基板と、
基板の一面の相当な部分を覆う第1電極と、
第1電極の反対側の基板の表面上に間隔を空けて設けられている複数の第2電極と、
第1電極の反対側の基板の表面上の第2電極間にある保護層とを備える放射線検出器。 - 保護層が、トンネル電流がそれを通じて流れることが可能となる厚さを有する酸化物フィルムである請求項1記載の放射線検出器。
- さらに、基板と各第2電極との間に保護層を備える請求項2記載の放射線検出器。
- 保護層が、II-VI化合物の天然酸化物から形成された第1の絶縁フィルムと第1のフィルムをオーバーレイする第2の絶縁フィルムとを含む請求項1記載の放射線検出器。
- 第2の絶縁フィルムが、窒化物フィルム、オキシナイトライドフィルム及び酸化物フィルムの一種である請求項4記載の放射線検出器。
- さらに、基板の側面の少なくとも一部を覆う保護層を備える請求項1記載の放射線検出器。
- さらに、基板の側面の少なくとも一部覆う保護層上に側面電極を備える請求項6記載の放射線検出器。
- さらに、第1電極と基板の一面との間に保護層を備える請求項1記載の放射線検出器。
- (a)II-VI化合物で形成された結晶基板上に保護層を形成することと、
(b)基板の第1の表面上の保護層に一連の孔を形成することと、
(c)各孔に、かつ基板の第1の表面上の保護層上へ導体材料を堆積させることと、
(d)基板の第1の表面上の保護層上へ堆積させた導体材料を選択的に除去し、導体材料を保護層の各孔に残存させ、保護層の各孔における導体材料を、基板の第1の表面上の保護層の各他の孔における導体材料と分離することとを含む放射線検出器を形成する方法。 - 各孔に堆積された導体材料が、基板の第1の表面及び基板の第1の表面上の薄い酸化物の層少なくとも一つと接触する請求項9記載の方法。
- さらに、第1の表面の反対側の基板の第2の表面から保護層の少なくとも一部を除去し、それによって基板の第2の表面の少なくとも一部を露出させることと、
基板の第2の表面の露出した部分の上に導体材料を堆積させることとを含む請求項9記載の方法。 - さらに、基板の側面上の保護層上へ導体材料を堆積させることを含む請求項9記載の方法。
- 保護層が、さらに、II-VI化合物の天然酸化物から形成された第1の絶縁フィルムと第1のフィルムをオーバーレイする第2の絶縁フィルムとを含み、
ステップ(b)が、第2のフィルムに一連の孔を形成することを含み、
ステップ(c)が、各孔における第1のフィルムの露出した表面上に導体材料を堆積させることを含む請求項9記載の方法。 - さらに、第2のフィルムの少なくとも一部を第1の表面の反対側の基板の第2の表面から除去し、それによって、基板の第2の表面上の第1のフィルムの表面の少なくとも一部を露出させることと、
導体材料を、基板の第2の表面上の第1のフィルムの露出した表面上に堆積させることとを含む請求項13記載の方法。 - 第1のフィルムの厚さが、#250オングストローム、望ましくは#100オングストローム、より望ましくは#25オングストロームを有する請求項14記載の方法。
- さらに、導体材料を堆積させる前に、基板の第2の表面の露出した部分を原子状水素でエッチングすることを含む請求項11記載の方法。
- さらに、ステップ(c)の前に、保護層の各穴における基板の露出した第1の表面を原子状水素でエッチングすることを含む請求項9記載の方法。
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US68138105P | 2005-05-16 | 2005-05-16 | |
PCT/US2006/018779 WO2007024302A2 (en) | 2005-05-16 | 2006-05-16 | High performance cdxzn1-xte x-ray and gamma ray radiation detector and method of manufacture thereof |
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US (1) | US20080203514A1 (ja) |
EP (1) | EP1891465A4 (ja) |
JP (1) | JP2008546177A (ja) |
CN (1) | CN101208617A (ja) |
IL (1) | IL187267A0 (ja) |
WO (1) | WO2007024302A2 (ja) |
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JP2015023203A (ja) * | 2013-07-22 | 2015-02-02 | 株式会社島津製作所 | 二次元放射線検出器の製造方法 |
WO2020066070A1 (ja) * | 2018-09-25 | 2020-04-02 | Jx金属株式会社 | 放射線検出素子及び放射線検出素子の製造方法 |
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JP2001525924A (ja) * | 1997-05-06 | 2001-12-11 | シマゲ オユ | 半導体撮像デバイス |
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US7001849B2 (en) * | 1998-07-16 | 2006-02-21 | Sandia National Laboratories | Surface treatment and protection method for cadmium zinc telluride crystals |
US20030016196A1 (en) * | 2001-07-17 | 2003-01-23 | Display Research Laboratories, Inc. | Thin film transistors suitable for use in flat panel displays |
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- 2006-05-16 CN CNA2006800168985A patent/CN101208617A/zh active Pending
- 2006-05-16 US US11/913,245 patent/US20080203514A1/en not_active Abandoned
- 2006-05-16 JP JP2008512412A patent/JP2008546177A/ja active Pending
- 2006-05-16 WO PCT/US2006/018779 patent/WO2007024302A2/en active Application Filing
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JPH085749A (ja) * | 1994-06-17 | 1996-01-12 | Japan Energy Corp | 半導体放射線検出器およびその製造方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013503481A (ja) * | 2009-08-31 | 2013-01-31 | ゼネラル・エレクトリック・カンパニイ | 半導体結晶による放射線検出器、及びこの検出器を製造する方法 |
JP2015023203A (ja) * | 2013-07-22 | 2015-02-02 | 株式会社島津製作所 | 二次元放射線検出器の製造方法 |
WO2020066070A1 (ja) * | 2018-09-25 | 2020-04-02 | Jx金属株式会社 | 放射線検出素子及び放射線検出素子の製造方法 |
JPWO2020066070A1 (ja) * | 2018-09-25 | 2021-08-30 | Jx金属株式会社 | 放射線検出素子及び放射線検出素子の製造方法 |
JP6998455B2 (ja) | 2018-09-25 | 2022-01-18 | Jx金属株式会社 | 放射線検出素子及び放射線検出素子の製造方法 |
US11721778B2 (en) | 2018-09-25 | 2023-08-08 | Jx Nippon Mining & Metals Corporation | Radiation detecting element and method for producing radiation detecting element |
Also Published As
Publication number | Publication date |
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CN101208617A (zh) | 2008-06-25 |
IL187267A0 (en) | 2008-02-09 |
WO2007024302A2 (en) | 2007-03-01 |
US20080203514A1 (en) | 2008-08-28 |
WO2007024302A3 (en) | 2007-11-08 |
EP1891465A2 (en) | 2008-02-27 |
EP1891465A4 (en) | 2011-11-30 |
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